Datasheet ced6601_ceu6601 Datasheet

CED6601/CEU6601

P-Channel Enhancement Mode Field Effect Transistor

FEATURES

-60V, -16A, R

R

Super high dense cell design for extremely low R

= 86mΩ @VGS = -10V.

DS(ON)

= 125mΩ @VGS = -4.5V.

DS(ON)

DS(ON)

.

High power and current handing capability.

Lead free product is acquired.

TO-251 & TO-252 package.

D

G

S
CEU SERIES
TO-252(D-PAK)

ABSOLUTE MAXIMUM RATINGS T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed

Maximum Power Dissipation @ TC = 25 C

a

- Derate above 25 C

G

D

S

CED SERIES
TO-251(I-PAK)

= 25 C unless otherwise noted

c

Symbol

V

DS

V

GS

I

D

I

DM

P

D

G

Limit

±20

0.29

Operating and Store Temperature Range TJ,Tstg -55 to 150

-60

-16

-64

43

D

S

Units

V

V

A

A

W

W/ C

C

Thermal Characteristics

Parameter Symbol Limit Units

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

RθJA

3.5RθJC

50

Rev 3. 2010.July

Details are subject to change without notice . http://www.cetsemi.com

1

C/W

C/W

CED6601/CEU6601

Electrical Characteristics T

= 25 C unless otherwise noted

c

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics

b

Gate Threshold Voltage

Static Drain-Source

On-Resistance

Dynamic Characteristics

c

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

c

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V

R

BV

C

C

C

t

d(on)

t

d(off)

Q

Q

DSS

I

DSS

I

GSSF

IGSSR

GS(th)

DS(on)

g

FS

iss

oss

rss

t

r

t

f

Q

g

gs

gd

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.

b

I

S

V

SD

Test Condition

VGS = 0V, ID = -250µA

VDS = -60V, VGS = 0V

VGS = 20V, VDS = 0V

VGS = -20V, VDS = 0V

VGS = VDS, ID = -250µA

VGS = -10V, ID = -8A

VGS = -4.5V, ID = -6A

VDS = -10V, ID = -15A

VDS = -30V, VGS = 0V,
f = 1.0 MHz

VDD = -30V, ID = -1A,
VGS = -10V, R

GEN

= 6Ω

VDS = -30V, ID = -3.5A,
VGS = -10V

VGS = 0V, IS = -16A

Typ Max

-60

-100

-1 -3

10

1135

95

60

13

4

45

6

22.6

2.4

5.7

-1

µA

100

nA

nA

8661

mΩ

12575 mΩ

pF

pF

pF

26

90

12

29.4

ns

8

ns

ns

ns

nC

nC

nC

-16

-1.5

V

V

S

A

V

2

CED6601/CEU6601

10

-VGS=10,8,6V

8

6

4

-ID, Drain Current (A)

2

0

0 0.3 1.2 1.81.50.90.6

-VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

1500

1250

1000

750

500

C, Capacitance (pF)

250

C

rss

0

0 5 10 15 20 25 30

C

iss

C

oss

-VDS, Drain-to-Source Voltage (V)

25

20

15

-V

=3V

GS

10

-ID, Drain Current (A)

5

TJ=125 C

0

0 2 4 61 3 5

25 C

-55 C

-VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

2.2
ID=-8A

VGS=-10V

1.9

1.6

1.3

1.0

RDS(ON), Normalized

0.7

RDS(ON), On-Resistance(Ohms)

0.4

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

Figure 3. Capacitance

1.3
VDS=V

GS

ID=-250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

Figure 4. On-Resistance Variation

with Temperature

2

V

10

10

10

=0

V

GS

1

0

-IS, Source-drain current (A)

-1

10

0.4 0.6 0.8 1.0

1.41.2

-VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

3

CED6601/CEU6601

10

VDS=-30V

ID=-3.5A

8

6

4

2

-VGS, Gate to Source Voltage (V)

0

0 5 10 15 20

Qg, Total Gate Charge (nC)

Figure 7. Gate Charge

DD

V

IN

V

D

V

GS

GEN

R

G

S

2

10

R

Limit

DS(ON)

1

10

0

10

-ID, Drain Current (A)

-1

10

TC=25 C
TJ=175 C

Single Pulse

-1

10

0

10

1ms

10ms

DC

10

100µs

1

2

10

-VDS, Drain-Source Voltage (V)

Figure 8. Maximum Safe

Operating Area

on

t

d(off)

t

r

t

90%

10% 10%

INVERTED

50% 50%

V

V

d(on)

t

OUT

IN

10%

R

L

OUT

V

90%

t

off

f

t

90%

PULSE WIDTH

Figure 9. Switching Test Circuit

0

10

D=0.5

0.2

-1

0.1

10

0.05

0.02

10

-2

-2

10

0.01

Single Pulse

-1

10

r(t),Normalized Effective

Transient Thermal Impedance

Figure 11. Normalized Thermal Transient Impedance Curve

Figure 10. Switching Waveforms

0

10

1

10

Square Wave Pulse Duration (msec)

4

PDM

t1

t2

1. RθJC (t)=r (t) * RθJC

2. RθJC=See Datasheet

3. TJM-TC = P* RθJC (t)

4. Duty Cycle, D=t1/t2

2

10

3

10

4

10