Page 1
CED2303/CEU2303
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -9A, R
R
Super high dense cell design for extremely low R
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
ABSOLUTE MAXIMUM RATINGS T
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation @ TC = 25 C
Operating and Store Temperature Range TJ,Tstg -55 to 175
= 200mΩ @VGS = -10V.
DS(ON)
= 320mΩ @VGS = -4.5V.
DS(ON)
G
S
CEU SERIES
TO-252(D-PAK)
Parameter
a
- Derate above 25 C
.
DS(ON)
D
G
D
S
CED SERIES
TO-251(I-PAK)
= 25 C unless otherwise noted
c
Symbol
V
DS
V
GS
I
D
I
DM
P
D
G
Limit
±20
0.22
-30
-9
-27
33
PRELIMINARY
D
S
Units
V
V
A
A
W
W/ C
C
Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJA
4.5RθJC
50
2004.November http://www.cetsemi.com
6 - 46
C/W
C/W
Page 2
CED2303/CEU2303
Electrical Characteristics T
= 25 C unless otherwise noted
c
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
R
BV
C
C
C
t
d(on)
t
d(off)
Q
Q
DSS
I
DSS
I
GSSF
IGSSR
GS(th)
DS(on)
g
FS
iss
oss
rss
t
r
t
f
Q
g
gs
gd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
b
I
S
V
SD
Test Condition
VGS = 0V, ID = -250µA
VDS = -30V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = -250µA
VGS = -10V, ID = -4.5A
VGS = -4.5V, ID = -2.7A
VDS = -10V, ID = -4.5A
VDS = -15V, VGS = 0V,
f = 1.0 MHz
VDD = -15V, ID = -1A,
VGS = -10V, R
GEN
= 6Ω
VDS = -15V, ID = -4.5A,
VGS = -10V
VGS = 0V, IS = -4.5A
-30
Typ Max
-1
100
-100
-1 -3
200
320
5
230
90
20
10
20
10
20
20
35
6
20
6
10
0.8
1.5
-9
-1.5
V
µA
nA
nA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
6
6 - 47
Page 3
CED2303/CEU2303
10
8
6
4
-ID, Drain Current (A)
2
0
0 2 4 8
-VGS=10,8,6V
6
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
300
C
250
200
150
100
C, Capacitance (pF)
50
0
0 5 10 15 20 25
iss
C
oss
C
rss
-VDS, Drain-to-Source Voltage (V)
10
25 C
-V
=2.0V
GS
-V
=2.5V
GS
-V
=1.5V
GS
10
8
6
4
-ID, Drain Current (A)
2
TJ=125 C
0
0 2 4 61 3 5
-55 C
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2
ID=-4.5A
VGS=-10V
1.9
1.6
1.3
1.0
RDS(ON), Normalized
0.7
RDS(ON), On-Resistance(Ohms)
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 3. Capacitance
1.3
VDS=V
GS
ID=-250µA
1.2
1.1
1.0
0.9
0.8
VTH, Normalized
0.7
Gate-Source Threshold Voltage
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
6 - 48
Figure 4. On-Resistance Variation
with Temperature
V
=0
V
GS
1
10
0
10
-IS, Source-drain current (A)
-1
10
0.4 0.6 0.8 1.0
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
1.41.2
Page 4
CED2303/CEU2303
10
VDS=-15V
ID=-4.5A
8
6
4
2
-VGS, Gate to Source Voltage (V)
0
0 2 4 6
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
V
IN
V
D
V
GS
GEN
R
G
S
DD
2
10
R
Limit
DS(ON)
DC
10
10ms
100ms
1
1ms
6
2
10
1
10
0
10
-ID, Drain Current (A)
-1
10
TC=25 C
TJ=175 C
Single Pulse
0
10
-VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
on
t
d(off)
t
r
t
90%
10% 10%
INVERTED
50% 50%
V
V
d(on)
t
OUT
IN
10%
R
L
OUT
V
90%
t
off
f
t
90%
PULSE WIDTH
Figure 9. Switching Test Circuit
0
10
D=0.5
0.2
0.1
-1
10
0.05
0.02
r(t),Normalized Effective
0.01
Single Pulse
Transient Thermal Impedance
-2
10
-2
10
-1
10
Figure 11. Normalized Thermal Transient Impedance Curve
Figure 10. Switching Waveforms
0
10
1
10
Square Wave Pulse Duration (msec)
6 - 49
PDM
t1
t2
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
2
10
3
10
4
10
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