Datasheet cec8218 Datasheet

CEC8218

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES

20V, 6.5A, R

R

Super High dense cell design for extremely low R

= 23mΩ @VGS = 4.5V.

DS(ON)

= 34mΩ @VGS = 2.5V.

DS(ON)

DS(ON)

.

*1K *1K

G1

High power and current handing capability.

Lead free product is acquired.

*Typical value by design

DFN3*3

ABSOLUTE MAXIMUM RATINGS T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed

Maximum Power Dissipation

a

= 25 C unless otherwise noted

A

Symbol

V

DS

V

GS

I

D

I

DM

P

D

Limit

Operating and Store Temperature Range TJ,Tstg -55 to 150

D

G2

S1 S2

DD

D

D

D

8 7

Bottom View

1

S1

5

6

3

42

G1

G2

S2

20

±12

6.5

25

1.5

D

Units

V

V

A

A

W

C

Thermal Characteristics

Parameter Symbol Limit Units

Thermal Resistance, Junction-to-Ambient

Details are subject to change without notice .

b

C/W83RθJA

Rev 1. 2010.July

http://www.cetsemi.com

1

CEC8218

Electrical Characteristics T

= 25 C unless otherwise noted

A

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics

c

Gate Threshold Voltage

Static Drain-Source

On-Resistance

Dynamic Characteristics

d

Forward Transconductance

Switching Characteristics

d

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

BV

V

R

t

t

Q

DSS

I

DSS

I

GSSF

IGSSR

GS(th)

DS(on)

g

FS

d(on)

t

r

d(off)

t

f

Q

g

Q

gs

gd

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.


b

c

I

S

V

SD

Test Condition

VGS = 0V, ID = 250µA

Typ Max

20

VDS = 20V, VGS = 0V

VGS = 12V, VDS = 0V

VGS = -12V, VDS = 0V

VGS = VDS, ID = 250µA

0.5

VGS = 4.5V, ID = 5A

VGS = 2.5V, ID = 4A

VDS = 10V, ID = 5A 17

0.34
VDD = 10V, ID = 1A,
VGS = 4.5V, R

GEN

= 6Ω

VDS = 10V, ID = 5A,

= 4.5V

V

GS

0.86

3.60

4.2

1.2

2.5

VGS = 0V, IS = 1.5A

2

1

10

-10

1.2

2317

mΩ

3424 mΩ

0.68

1.72

7.5

4

5.6

6.5

1.2

V

µA

µA

µA

V

S

µs

µs

µs

µs

nC

nC

nC

A

V

2

CEC8218

25

VGS=4.5,4,3V

20

15

10

ID, Drain Current (A)

5

0

0 1 432

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

2.2
ID=5A

VGS=4.5V

1.9

1.6

1.3

1.0

RDS(ON), Normalized

0.7

RDS(ON), On-Resistance(Ohms)

0.4

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

VGS=2.5V

V

=2.0V

GS

20

25 C

16

12

8

ID, Drain Current (A)

4

TJ=125 C

0

-55 C

1.0 2.00.0 2.5

1.50.5

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

V

=0V

GS

1

10

0

10

IS, Source-drain current (A)

-1

10

0.4 0.6 0.8 1.0

VSD, Body Diode Forward Voltage (V)

1.41.2

Figure 3. On-Resistance Variation

with Temperature

1.3
VDS=V

GS

ID=250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

Figure 4. Body Diode Forward Voltage

Variation with Source Current

2

10

R

Limit

DS(ON)

1

10

0

10

-1

10

ID, Drain Current (A)

-2

10

TA=25 C
TJ=150 C

Single Pulse

-2

10

-1

10

DC

10

100ms

1s

0

1ms

10ms

1

10

2

10

VDS, Drain-Source Voltage (V)

Figure 6. Maximum Safe

Operating Area

3

5

4

3

VDS=10V

ID=5A

V

d(on)

t

OUT

CEC8218

on

t

d(off)

t

r

t

90%

10% 10%

INVERTED

t

off

f

t

90%

2

1

VGS, Gate to Source Voltage (V)

0

0 1 2 4 6

3 5

Qg, Total Gate Charge (nC)

Figure 7. Gate Charge

DD

V

IN

V

R

D

V

GS

GEN

R

G

S

Figure 9. Switching Test Circuit

IN

V

10%

50% 50%

90%

PULSE WIDTH

Figure 8. Switching Waveforms

L

OUT

V

0

10

D=0.5

0.2

-1

0.1

10

0.05

0.02

0.01

-2

10

r(t),Normalized Effective

Single Pulse

Transient Thermal Impedance

-3

10

-4

10

-3

10

-2

10

-1

10

PDM

t1

t2

1. RθJA (t)=r (t) * RθJA

2. RθJA=See Datasheet

3. TJM-TA = P* RθJA (t)

4. Duty Cycle, D=t1/t2

0

10

1

10

2

10

Square Wave Pulse Duration (sec)

Figure 10. Normalized Thermal Transient Impedance Curve

4