Page 1
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
CEA6861
-60V, -2.4A, R
R
High dense cell design for extremely low R
Rugged and reliable.
Lead free product is acquired.
SOT-89 package.
ABSOLUTE MAXIMUM RATINGS T
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation
Operating and Store Temperature Range TJ,Tstg -55 to 150
= 135mΩ @VGS = -10V.
DS(ON)
= 180mΩ @VGS = -4.5V.
DS(ON)
Parameter
a
DS(ON)
.
D
SOT-89
= 25 C unless otherwise noted
A
D
G
Symbol
V
DS
V
GS
I
D
I
DM
P
D
S
G
Limit
±20
1.25
-60
-2.4
-10
D
S
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice .
b
Rev 1. 2006.Sep
http://www.cetsemi.com
1
C/W100RθJA
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CEA6861
Electrical Characteristics T
= 25 C unless otherwise noted
c
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
R
BV
C
C
C
t
d(on)
t
d(off)
Q
Q
DSS
I
DSS
I
GSSF
IGSSR
GS(th)
DS(on)
iss
oss
rss
t
r
t
f
Q
g
gs
gd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
b
I
S
V
SD
Test Condition
VGS = 0V, ID = -250µA
VDS = -60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = -250µA
VGS = -10V, ID = -2.4A
VGS = -4.5V, ID = -1.9A
VDS = -30V, VGS = 0V,
f = 1.0 MHz
VDD = -30V, ID = -1A,
VGS = -10V, R
GEN
= 6Ω
VDS = -30V, ID = -2.4A,
VGS = -10V
VGS = 0V, IS = -1.3A
Typ Max
-60
-100
-1 -3
890
90
85
13
5
39
13
11.2
2.6
1.8
-1
µA
100
nA
nA
135105
mΩ
180135 mΩ
pF
pF
pF
26
10
78
26
14.8
ns
ns
ns
ns
nC
nC
nC
-2.4
-1.2
V
6
V
A
V
2
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CEA6861
10
8
6
4
-ID, Drain Current (A)
2
0
0.0 0.5 1.0 2.51.5 2.0
-VGS=10,8,6,5V
-V
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
1200
C
1000
800
600
400
C, Capacitance (pF)
200
C
rss
0
0 6 12 18 24 30
iss
C
oss
-VDS, Drain-to-Source Voltage (V)
5
4
3
2
=3.0
V
GS
-ID, Drain Current (A)
1
TJ=125 C
0
0 2 4 61 3 5
25 C
-55 C
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2
ID=-2.4A
VGS=-10V
1.9
1.6
1.3
1.0
RDS(ON), Normalized
0.7
RDS(ON), On-Resistance(Ohms)
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 3. Capacitance
1.3
VDS=V
GS
ID=-250µA
1.2
1.1
1.0
0.9
0.8
VTH, Normalized
0.7
Gate-Source Threshold Voltage
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
Figure 4. On-Resistance Variation
with Temperature
V
=0
V
GS
1
10
0
10
-IS, Source-drain current (A)
-1
10
0.4 0.6 0.8 1.0
1.41.2
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
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CEA6861
10
VDS=-30V
ID=-2.4A
8
6
4
2
-VGS, Gate to Source Voltage (V)
0
0 3 6 9 12
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
DD
V
IN
V
D
V
GS
GEN
R
G
S
2
10
1
R
Limit
DS(ON)
10
0
10
-1
10
-ID, Drain Current (A)
-2
10
TA=25 C
TJ=150 C
Single Pulse
-2
10
-1
10
0
10
DC
1ms
10ms
1s
6
1
10
2
10
-VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
on
t
d(off)
t
r
t
90%
10% 10%
INVERTED
50% 50%
V
V
d(on)
t
OUT
IN
10%
R
L
OUT
V
90%
t
off
f
t
90%
PULSE WIDTH
Figure 9. Switching Test Circuit
0
10
D=0.5
0.2
-1
0.1
10
0.05
0.02
-2
0.01
10
r(t),Normalized Effective
10
-3
-4
10
Single Pulse
-3
10
Transient Thermal Impedance
Figure 11. Normalized Thermal Transient Impedance Curve
Figure 10. Switching Waveforms
-2
10
-1
10
Square Wave Pulse Duration (msec)
4
PDM
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
0
10
1
10
2
10
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