The CD54AC00F3A and CD54ACT00F3A are quad 2-input
NAND gates that utilize the Harris Advanced CMOS Logic
technology.
Ordering Information
TEMP.
PART NUMBER
CD54AC00F3A-55 to 12514 Ld CERDIPF14.3
CD54ACT00F3A-55 to 12514 Ld CERDIPF14.3
NOTE:
1. Wafer and die for this part number is available which meets all electrical specifications. Please contact your local sales office or Harris
customer service for ordering information.
o
Functional Diagram
C
ABY
LLH
HLH
LHH
HHL
RANGE (oC)PACKAGE
1
1A
2
1B
4
2A
5
2B
9
3B
10
3A
12
4B
13
4A
TRUTH TABLE
INPUTSOUTPUTS
3
6
8
11
GND = 7
V
CC
1Y
2Y
3Y
4Y
= 14
PKG.
NO.
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
2. For up to 4 outputs per device, add ±25mA for each additional output.
3. Unless otherwise specified, all voltages are referenced to ground.
4. θJA is measured with the component mounted on an evaluation PC board in free air.
Maximum Junction Temperature (Hermetic P ac kage or Die) . . . 175oC
Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . . 300oC
CC
DC Electrical Specifications
PARAMETERSYMBOL
AC TYPES
High Level Input VoltageV
Low Level Input VoltageV
High Level Output VoltageV
IH
IL
OH
TEST
CONDITIONS
(V)IO(mA)MINMAXMINMAX
I
V
CC
(V)
o
25
C-55oC TO 125oC
--1.51.2-1.2-V
32.1-2.1-V
4.53.15
(Note 5)
-3.15
(Note 5)
-V
5.53.85-3.85-V
--1.5-0.3-0.3V
3-0.9-0.9V
4.5-1.35
(Note 5)
-1.35
(Note 5)
5.5-1.65-1.65V
VIH or V
-0.051.51.4-1.4-V
IL
-0.0532.9-2.9-V
-0.054.54.4-4.4-V
-432.58-2.4-V
-244.53.94
(Note 5)
-50
5.5--3.85-V
-3.7
(Note 5)
-V
(Note 6, 7)
UNITSV
V
2
Page 3
CD54AC00F3A, CD54ACT00F3A
DC Electrical Specifications (Continued)
TEST
PARAMETERSYMBOL
Low Level Output VoltageV
OL
CONDITIONS
(V)IO(mA)MINMAXMINMAX
I
VIH or V
0.051.5-0.1-0.1V
IL
V
CC
(V)
0.053-0.1-0.1V
0.054.5-0.1-0.1V
123-0.36-0.5V
244.5-0.36
50
5.5---1.65V
(Note 6, 7)
Input Leakage CurrentI
I
VCC or
-5.5-±0.1
GND
Quiescent Device CurrentI
CC
05.5-4
ACT TYPES
High Level Input VoltageV
IH
--4.5 to 5.52
(Note 5)
Low Level Input VoltageV
High Level Output VoltageV
IL
OH
--4.5 to 5.5-0.8
VIH or V
-0.054.54.4-4.4-V
IL
-244.53.94
(Note 5)
-50
5.5--3.85-V
(Note 6, 7)
Low Level Output VoltageV
OL
VIH or V
0.054.5-0.1-0.1V
IL
244.5-0.36
50
5.5---1.65V
(Note 6, 7)
Input Leakage CurrentI
I
VCC or
-5.5-±0.1
GND
Quiescent Device CurrentI
CC
VCC or
05.5-4
GND
AdditionalSupply Current per
Input Pin TTL Inputs High
∆I
CC
V
CC
-2.1
-4.5 to 5.5-2.4-3mA
1 Unit Load
NOTES:
5. Tested at 100%.
6. Test one output at a time for a 1-second maximum duration. Measurement is made by forcing current and measuring voltage to minimize
power dissipation.
7. Test verifies a minimum transmission-line-drive capability of 75Ω for 54AC/ACT Series.
o
25
C-55oC TO 125oC
-0.5
(Note 5)
-±1
(Note 5)
-80
(Note 5)
-2
(Note 5)
-0.8
(Note 5)
-3.7
(Note 5)
-0.5
(Note 5)
-±1
(Note 5)
-80
(Note 5)
UNITSV
V
(Note 5)
µA
(Note 5)
µA
(Note 5)
-V
V
(Note 5)
-V
V
(Note 5)
µA
(Note 5)
µA
(Note 5)
ACT Input Load Table
INPUTUNIT LOAD
All0.15
NOTE: Unit load is ∆ICClimit specified in DC Electrical Specifications
Table, e .g., 2.4mA max at 25oC.