Page 1
TL/F/5982
CD4093BM/CD4093BC Quad 2-Input NAND Schmitt Trigger
February 1993
CD4093BM/CD4093BC Quad
2-Input NAND Schmitt Trigger
General Description
The CD4093B consists of four Schmitt-trigger circuits. Each
circuit functions as a 2-input NAND gate with Schmitt-trigger
action on both inputs. The gate switches at different points
for positive and negative-going signals. The difference between the positive (V
T
a
) and the negative voltage (V
T
b
)is
defined as hysteresis voltage (V
H
).
All outputs have equal source and sink currents and conform to standard B-series output drive (see Static Electrical
Characteristics).
Features
Y
Wide supply voltage range 3.0V to 15V
Y
Schmitt-trigger on each input
with no external components
Y
Noise immunity greater than 50%
Y
Equal source and sink currents
Y
No limit on input rise and fall time
Y
Standard B-series output drive
Y
Hysteresis voltage (any input) T
A
e
25§C
Typical V
DD
e
5.0V V
H
e
1.5V
V
DD
e
10V V
H
e
2.2V
V
DD
e
15V V
H
e
2.7V
Guaranteed V
H
e
0.1 V
DD
Applications
Y
Wave and pulse shapers
Y
High-noise-environment systems
Y
Monostable multivibrators
Y
Astable multivibrators
Y
NAND logic
Connection Diagram
Dual-In-Line Package
TL/F/5982– 1
Top View
Order Number CD4093B
C
1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.
Page 2
Absolute Maximum Ratings (Notes1&2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
DC Supply Voltage (V
DD
)
b
0.5 toa18 V
DC
Input Voltage (VIN)
b
0.5 to V
DD
a
0.5 V
DC
Storage Temperature Range (TS)
b
65§Ctoa150§C
Power Dissipation (PD)
Dual-In-Line 700 mW
Small Outline 500 mW
Lead Temperature (T
L
)
(Soldering, 10 seconds) 260
§
C
Recommended Operating
Conditions
(Note 2)
DC Supply Voltage (VDD) 3 to 15 V
DC
Input Voltage (VIN) 0 to VDDV
DC
Operating Temperature Range (TA)
CD4093BM
b
55§Ctoa125§C
CD4093BC
b
40§Ctoa85§C
DC Electrical Characteristics CD4093BM (Note 2)
Symbol Parameter Conditions
b
55§C
a
25§C
a
125§C
Units
Min Max Min Typ Max Min Max
I
DD
Quiescent Device V
DD
e
5V 0.25 0.25 7.5 mA
Current V
DD
e
10V 0.5 0.5 15.0 mA
V
DD
e
15V 1.0 1.0 30.0 mA
V
OL
Low Level V
IN
e
VDD,lI
O
l
k
1 mA
Output Voltage V
DD
e
5V 0.05 0 0.05 0.05 V
V
DD
e
10V 0.05 0 0.05 0.05 V
V
DD
e
15V 0.05 0 0.05 0.05 V
V
OH
High Level V
IN
e
VSS,lI
O
l
k
1 mA
Output Voltage V
DD
e
5V 4.95 4.95 5 4.95 V
V
DD
e
10V 9.95 9.95 10 9.95 V
V
DD
e
15V 14.95 14.95 15 14.95 V
V
T
b
Negative-Going ThresholdlI
O
l
k
1 mA
Voltage (Any Input) V
DD
e
5V, V
O
e
4.5V 1.3 2.25 1.5 1.8 2.25 1.5 2.3 V
V
DD
e
10V, V
O
e
9V 2.85 4.5 3.0 4.1 4.5 3.0 4.65 V
V
DD
e
15V, V
O
e
13.5V 4.35 6.75 4.5 6.3 6.75 4.5 6.9 V
V
T
a
Positive-Going ThresholdlI
O
l
k
1 mA
Voltage (Any Input) V
DD
e
5V, V
O
e
0.5V 2.75 3.65 2.75 3.3 3.5 2.65 3.5 V
V
DD
e
10V, V
O
e
1V 5.5 7.15 5.5 6.2 7.0 5.35 7.0 V
V
DD
e
15V, V
O
e
1.5V 8.25 10.65 8.25 9.0 10.5 8.1 10.5 V
V
H
Hysteresis (V
T
a
b
V
T
b
)V
DD
e
5V 0.5 2.35 0.5 1.5 2.0 0.35 2.0 V
(Any Input) V
DD
e
10V 1.0 4.30 1.0 2.2 4.0 0.70 4.0 V
V
DD
e
15V 1.5 6.30 1.5 2.7 6.0 1.20 6.0 V
I
OL
Low Level Output V
IN
e
V
DD
Current (Note 3) V
DD
e
5V, V
O
e
0.4V 0.64 0.51 0.88 0.36 mA
V
DD
e
10V, V
O
e
0.5V 1.6 1.3 2.25 0.9 mA
V
DD
e
15V, V
O
e
1.5V 4.2 3.4 8.8 2.4 mA
I
OH
High Level Output V
IN
e
V
SS
Current (Note 3) V
DD
e
5V, V
O
e
4.6V
b
0.64 0.51b0.88
b
0.36 mA
V
DD
e
10V, V
O
e
9.5Vb1.6
b
1.3b2.25
b
0.9 mA
V
DD
e
15V, V
O
e
13.5Vb4.2
b
3.4b8.8
b
2.4 mA
I
IN
Input Current V
DD
e
15V, V
IN
e
0V
b
0.1
b
10
b
5
b
0.1
b
1.0 mA
V
DD
e
15V, V
IN
e
15V 0.1 10
b
5
0.1 1.0 mA
Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed; they are not meant to imply that the devices
should be operated at these limits. The table of ‘‘Recommended Operating Conditions’’ and ‘‘Electrical Characteristics’’ provides conditions for actual device
operation.
Note 2: V
SS
e
0V unless otherwise specified.
Note 3: I
OH
and IOLare tested one output at a time.
2
Page 3
DC Electrical Characteristics CD4093BC (Note 2)
Symbol Parameter Conditions
b
40§C
a
25§C
a
85§C
Units
Min Max Min Typ Max Min Max
I
DD
Quiescent Device V
DD
e
5V 1.0 1.0 7.5 mA
Current V
DD
e
10V 2.0 2.0 15.0 mA
V
DD
e
15V 4.0 4.0 30.0 mA
V
OL
Low Level V
IN
e
V
DD,
l
I
O
l
k
1 mA
Output Voltage V
DD
e
5V 0.05 0 0.05 0.05 V
V
DD
e
10V 0.05 0 0.05 0.05 V
V
DD
e
15V 0.05 0 0.05 0.05 V
V
OH
High Level V
IN
e
VSS,lI
O
l
k
1 mA
Output Voltage V
DD
e
5V 4.95 4.95 5 4.95 V
V
DD
e
10V 9.95 9.95 10 9.95 V
V
DD
e
15V 14.95 14.95 15 14.95 V
V
T
b
Negative-Going ThresholdlI
O
l
k
1 mA
Voltage (Any Input) V
DD
e
5V, V
O
e
4.5V 1.3 2.25 1.5 1.8 2.25 1.5 2.3 V
V
DD
e
10V, V
O
e
9V 2.85 4.5 3.0 4.1 4.5 3.0 4.65 V
V
DD
e
15V, V
O
e
13.5V 4.35 6.75 4.5 6.3 6.75 4.5 6.9 V
V
T
a
Positive-Going ThresholdlI
O
l
k
1 mA
Voltage (Any Input) V
DD
e
5V, V
O
e
0.5V 2.75 3.6 2.75 3.3 3.5 2.65 3.5 V
V
DD
e
10V, V
O
e
1V 5.5 7.15 5.5 6.2 7.0 5.35 7.0 V
V
DD
e
15V, V
O
e
1.5V 8.25 10.65 8.25 9.0 10.5 8.1 10.5 V
V
H
Hysteresis (V
T
a
b
V
T
b
)V
DD
e
5V 0.5 2.35 0.5 1.5 2.0 0.35 2.0 V
(Any Input) V
DD
e
10V 1.0 4.3 1.0 2.2 4.0 0.70 4.0 V
V
DD
e
15V 1.5 6.3 1.5 2.7 6.0 1.20 6.0 V
I
OL
Low Level Output V
IN
e
V
DD
Current (Note 3) V
DD
e
5V, V
O
e
0.4V 0.52 0.44 0.88 0.36 mA
V
DD
e
10V, V
O
e
0.5V 1.3 1.1 2.25 0.9 mA
V
DD
e
15V, V
O
e
1.5V 3.6 3.0 8.8 2.4 mA
I
OH
High Level Output V
IN
e
V
SS
Current (Note 3) V
DD
e
5V, V
O
e
4.6V
b
0.52 0.44b0.88
b
0.36 mA
V
DD
e
10V, V
O
e
9.5Vb1.3
b
1.1b2.25
b
0.9 mA
V
DD
e
15V, V
O
e
13.5Vb3.6
b
3.0b8.8
b
2.4 mA
I
IN
Input Current V
DD
e
15V, V
IN
e
0V
b
0.3
b
10
b
5
b
0.3
b
1.0 mA
V
DD
e
15V, V
IN
e
15V 0.3 10
b
5
0.3 1.0 mA
AC Electrical Characteristics*
T
A
e
25§C, C
L
e
50 pF, R
L
e
200k, Input tr,t
f
e
20 ns, unless otherwise specified
Symbol Parameter Conditions Min Typ Max Units
t
PHL,tPLH
Propagation Delay Time V
DD
e
5V 300 450 ns
V
DD
e
10V 120 210 ns
V
DD
e
15V 80 160 ns
t
THL,tTLH
Transition Time V
DD
e
5V 90 145 ns
V
DD
e
10V 50 75 ns
V
DD
e
15V 40 60 ns
C
IN
Input Capacitance (Any Input) 5.0 7.5 pF
C
PD
Power Dissipation Capacitance (Per Gate) 24 pF
*AC Parameters are guaranteed by DC correlated testing.
Note 2: V
SS
e
0V unless otherwise specified.
Note 3: I
OH
and IOLare tested one output at a time.
3
Page 4
Typical Applications
Gated Oscillator
TL/F/5982– 2
Assume t
1
a
t
2
ll
t
PHL
a
t
PLH
then:
t
0
e
RC fin[VDD/V
T
b
]
t
1
e
RC fin[(V
DD
b
V
T
b
)/(V
DD
b
V
T
a
)
]
t
2
e
RC fin[V
T
a
/V
T
b
]
f
e
1
t
1
a
t
2
e
1
RC fin
(V
T
a
)(V
DD
b
V
T
b
)
(V
T
b
)(V
DD
b
V
T
a
)
TL/F/5982– 3
Gated One-Shot
TL/F/5982– 4
TL/F/5982– 5
(a) Negative-Edge Triggered
TL/F/5982– 6
TL/F/5982– 7
(b) Positive-Edge Triggered
4
Page 5
Typical Performance Characteristics
Typical Transfer
Characteristics
TL/F/5982– 8
Guaranteed Hysteresis vs V
DD
TL/F/5982– 9
Guaranteed Trigger Threshold
Voltage vs V
DD
TL/F/5982– 10
Guaranteed Hysteresis vs V
DD
TL/F/5982– 11
Input and Output Characteristics
TL/F/5982– 12
Output Characteristic Input Characteristic
TL/F/5982– 13
V
NML
e
V
IH(MIN)
b
V
OL
j
V
IH(MIN)
e
V
Ta(MIN)
V
NMH
e
V
OH
b
V
IL(MAX)
j
V
DD
b
V
IL(MAX)
e
V
DD
b
V
Tb(MAX)
AC Test Circuits and Switching Time Waveforms
TL/F/5982– 14
TL/F/5982– 15
5
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CD4093BM/CD4093BC Quad 2-Input NAND Schmitt Trigger
Physical Dimensions inches (millimeters)
Ceramic Dual-In-Line Package (J)
Order Number CD4093BMJ or CD4093BCJ
NS Package Number J14A
Molded Dual-In-Line Package (N)
Order Number CD4093BM or CD4093BCN
NS Package Number N14A
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:
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systems which, (a) are intended for surgical implant support device or system whose failure to perform can
into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life
failure to perform, when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can effectiveness.
be reasonably expected to result in a significant injury
to the user.
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