Datasheet CD4040BMS, CD4024BMS, CD4020BMS Datasheet (Intersil Corporation)

October 1996

CD4020BMS, CD4024BMS,

CD4040BMS

CMOS Ripple-Carry Binary

Counter/Dividers

Features

• High Voltage Types (20V Rating)

• Medium Speed Operation

• Fully Static Operation

• Buffered Inputs and Outputs

• 100% Tested for Quiescent Current at 20V

• Standardized Symmetrical Output Characteristics

• Common Reset

• 5V, 10V and 15V Parametric Ratings

• Maximum Input Current of 1µa at 18V Over Full Pack-

age-Temperature Range;

- 100nA at 18V and 25

o

C

• Noise Margin (Over Full Packa ge Temperature Range):

- 1V at VDD = 5V

- 2V at VDD = 10V

- 2.5V at VDD = 15V

• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications For Description Of
‘B’ Series CMOS Devices”

Applications

• Control Counters

• Timers

• Frequency Dividers

• Time-Delay Circuits

Description

CD4020BMS - 14 Stage
CD4024BMS - 7 Stage
CD4040BMS - 12 Stage

Pinouts

RESET

NC = NO CONNECTION

Q12
Q13
Q14

Q6
Q5
Q7
Q4

VSS

Q7
Q6
Q5
Q4

VSS

1
2
3
4
5
6
7
8

1

θ

2
3
4
5
6
7

CD4020BMS

TOP VIEW

CD4024BMS

TOP VIEW

CD4040BMS

TOP VIEW

16
15
14
13
12
11
10

9

14
13
12
11
10

9
8

VDD
Q11
Q10
Q8
Q9
RESET

θ

Q1

VDD
NC
Q1
Q2
NC
Q3
NC

CD4020BMS, CD4024BMS, and CD4040BMS are ripple­carry binary counters. All counter stages are master-slave
flip-flops. The state of a counter advances one count on the
negative transition of each input pulse; a high level on the
RESET line resets the counter to its all zeros state. Schmitt
trigger action on the input-pulse line permits unlimited rise
and fall times. All inputs and outputs are buffered.

The CD4020BMS, CD4024BMS and the CD4040BMS is
supplied in these 14 lead outline packages:

CD4020B CD4024B CD4040B

Braze Seal DIP
Frit Seal DIP
Ceramic Flatpack

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

H4W H4Q H4X

H1F H1B H1F

H6W H3W H6W

7-359

Q12

Q6
Q5
Q7
Q4
Q3
Q2

VSS

16

1
2
3
4
5
6
7
8

VDD

15

Q11

14

Q10

13

Q8

12

Q9
R

11
10

θ

9

Q1

File Number 3300.1

Specifications CD4020BMS, CD4024BMS, CD4040BMS

Absolute Maximum Ratings Reliability Information

DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V

(Voltage Referenced to VSS Terminals)

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V

DC Input Current, Any One Input. . . . . . . . . . . . . . . . . . . . . . . . .±10mA

Operating Temperature Range. . . . . . . . . . . . . . . . -55

Package Types D, F, K, H

Storage Temperature Range (TSTG) . . . . . . . . . . . -65

o

C to +125oC

o

C to +150oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265

At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for

10s Maximum

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS (NOTE 1)

Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC-10µA

VDD = 18V, VIN = VDD or GND 3 -55

Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25

VDD = 18V 3 -55oC -100 - nA

Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA

VDD = 18V 3 -55oC - 100 nA
Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV
Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 0.53 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -1.8 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA
Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -3.5 mA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V
P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V
Functional F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH >

VDD = 20V, VIN = VDD or GND 7 +25oC
VDD = 18V, VIN = VDD or GND 8A +125oC
VDD = 3V, VIN = VDD or GND 8B -55oC

Input Voltage Low

VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.5 V

(Note 2)
Input Voltage High

VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V

(Note 2)
Input Voltage Low

(Note 2)
Input Voltage High

(Note 2)

VIL VDD = 15V, VOH > 13.5V,

VOL < 1.5V

VIH VDD = 15V, VOH > 13.5V,

VOL < 1.5V

NOTES: 1. All voltages referenced to device GND, 100% testing being

implemented.

2. Go/No Go test with limits applied to inputs

Thermal Resistance . . . . . . . . . . . . . . . . θ

Ceramic DIP and FRIT Package. . . . . 80oC/W 20oC/W

Flatpack Package . . . . . . . . . . . . . . . . 70

Maximum Package Power Dissipation (PD) at +125oC

For TA = -55
For TA = +100

o

C

Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW

o

C to +100oC (Package Type D, F, K) . . . . . . 500mW

o

C to +125oC (Package Type D, F, K). . . . . .Derate

Linearity at 12mW/oC to 200mW

ja

o

C/W 20oC/W

For TA = Full Package Temperature Range (All Package Types)

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

GROUP A

LIMITS

SUBGROUPS TEMPERATURE

2 +125oC - 1000 µA

o

C-10µA

o

C -100 - nA

2 +125oC -1000 - nA

2 +125oC - 1000 nA

VOL <

VDD/2

VDD/2

1, 2, 3 +25oC, +125oC, -55oC- 4 V

1, 2, 3 +25oC, +125oC, -55oC11 - V

3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.

θ

jc

UNITSMIN MAX

V

7-360

Specifications CD4020BMS, CD4024BMS, CD4040BMS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP A

PARAMETER SYMBOL CONDITIONS (NOTE 1, 2)

Propagation Delay
0 To Q1

Propagation Delay
Qn To Qn + 1

Propagation Delay
Reset To Q

Transition Time
Q1

Maximum Clock Input
Frequency

NOTES:

1. VDD = 5V, CL = 50pF, RL = 200K

2. -55oC and +125oC limits guaranteed, 100% testing being implemented.

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC- 5 µA

Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC,

Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC,

Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC,

Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC,

Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA

Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC 0.9 - mA

Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC 2.4 - mA

Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC - -0.36 mA

Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC - -1.15 mA

Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC - -0.9 mA

Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC - -2.4 mA

TPHL1
TPLH1

TPHL2
TPLH2

TPLH3
TPHL3

TTHL
TTLH

FCL VDD = 5V, VIN = VDD or GND 9 +25oC 3.5 - MHz

VDD = 5V, VIN = VDD or GND 9 +25oC - 360 ns

VDD = 5V, VIN = VDD or GND 9 +25oC - 330 ns

VDD = 5V, VIN = VDD or GND 9 +25oC - 280 ns

VDD = 5V, VIN = VDD or GND 9 +25oC - 200 ns

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC- 10µA

VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC- 10µA

SUBGROUPS TEMPERATURE

10, 11 +125oC, -55oC - 486 ns

10, 11 +125oC, -55oC - 446 ns

10, 11 +125oC, -55oC - 378 ns

10, 11 +125oC, -55oC - 270 ns

10, 11 +125oC, -55oC 2.22 - MHz

+125oC - 150 µA

+125oC - 300 µA

+125oC - 600 µA

-55oC

-55oC

-55oC

-55oC

-55oC 0.64 - mA

-55oC 1.6 - mA

-55oC 4.2 - mA

-55oC - -0.64 mA

-55oC - -2.0 mA

-55oC - -1.6 mA

-55oC - -4.2 mA

LIMITS

UNITSMIN MAX

LIMITS

UNITSMIN MAX

-50mV

-50mV

4.95 - V

9.95 - V

7-361

Specifications CD4020BMS, CD4024BMS, CD4040BMS

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

LIMITS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Input Voltage Low VIL VDD = 10V, V OH > 9V, VOL < 1V 1, 2 +25oC, +125oC,

-3V

-55oC

o

Input Voltage High VIH VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25

Propagation Delay
Input To Q1

Propagation Delay
QN To QN + 1

Propagation Delay
Reset To Q

Transition Time TTHL

Maximum Clock Input
Frequency

Minimum Reset Pulse
Width

TPHL1
TPLH1

TPHL2
TPLH2

VDD = 10V 1, 2, 3 +25oC - 160 ns
VDD = 15V 1, 2, 3 +25oC - 130 ns
VDD = 10V 1, 2, 3 +25oC - 80 ns
VDD = 15V 1, 2, 3 +25oC - 60 ns

TPHL3 VDD = 10V 1, 2, 3 +25oC - 120 ns

VDD = 15V 1, 2, 3 +25oC - 100 ns
VDD = 10V 2, 3 +25

TTLH

VDD = 15V 2, 3 +25

FCL VDD = 10V 1, 2, 3 +25oC 8 - MHz

VDD = 15V 1, 2, 3 +25oC 12 - MHz

TW VDD = 5V 1, 2, 3 +25oC - 200 ns

VDD = 10V 1, 2, 3 +25oC - 80 ns

C, +125oC,

o

-55

C

o

C - 100 ns

o

C - 80 ns

7-V

VDD = 15V 1, 2, 3 +25oC - 60 ns

Reset Removal Time TREM VDD = 5V 1, 2, 3 +25oC - 350 ns

VDD = 10V 1, 2, 3 +25oC - 150 ns
VDD = 15V 1, 2, 3 +25oC - 100 ns

Minimum Input Pulse
Width

TW VDD = 5V 1, 2, 3 +25oC - 140 ns

VDD = 10V 1, 2, 3 +25oC - 60 ns
VDD = 15V 1, 2, 3 +25oC - 40 ns

Input Capacitance CIN Any Input 1, 2 +25oC - 7.5 pF

NOTES:

1. All voltages referenced to device GND.

2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.

3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

UNITSMIN MAX

TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

LIMITS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

UNITSMIN MAX

Supply Current IDD VDD = 20V, VIN = VDD or GND 1, 4 +25oC-25µA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1, 4 +25oC -2.8 -0.2 V
N Threshold Voltage

∆VTND VDD = 10V, ISS = -10µA 1, 4 +25oC-±1V

Delta
P Threshold Voltage VTP VSS = 0V, IDD = 10µA 1, 4 +25oC 0.2 2.8 V
P Threshold Voltage

∆VTPD VSS = 0V, IDD = 10µA 1, 4 +25oC-±1V

Delta
Functional F VDD = 18V, VIN = VDD or GND 1 +25oC VOH >

VDD/2

Propagation Delay Time TPHL

VDD = 3V, VIN = VDD or GND
VDD = 5V 1, 2, 3, 4 +25oC - 1.35 x

TPLH

VOL <
VDD/2

ns

+25oC

Limit

7-362

V

Specifications CD4020BMS, CD4024BMS, CD4040BMS

TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

LIMITS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

NOTES: 1. All voltages referenced to device GND.

2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC

PARAMETER SYMBOL DELTA LIMIT

Supply Current - MSI-2 IDD ± 1.0µA
Output Current (Sink) IOL5 ± 20% x Pre-Test Reading
Output Current (Source) IOH5A ± 20% x Pre-Test Reading

TABLE 6. APPLICABLE SUBGROUPS

MIL-STD-883

CONFORMANCE GROUP

Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
Interim Test 2 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A

PDA (Note 1) 100% 5004 1, 7, 9, Deltas

Interim Test 3 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A

PDA (Note 1) 100% 5004 1, 7, 9, Deltas
Final Test 100% 5004 2, 3, 8A, 8B, 10, 11
Group A Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroups 1, 2, 3, 9, 10, 11

Subgroup B-6 Sample 5005 1, 7, 9

Group D Sample 5005 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3

NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.

METHOD GROUP A SUBGROUPS READ AND RECORD

3. See Table 2 for +25oC limit.

4. Read and Record

UNITSMIN MAX

TABLE 7. TOTAL DOSE IRRADIATION

MIL-STD-883

CONFORMANCE GROUPS

Group E Subgroup 2 5005 1, 7, 9 Table 4 1, 9 Table 4

FUNCTION OPEN GROUND VDD 9V ± -0.5V

PART NUMBER CD4020BMS
Static Burn-In 1

Note 1
Static Burn-In 2

Note 1
Dynamic Burn-

In Note 1
Irradiation

Note 2
PART NUMBER CD4024BMS
Static Burn-In 1

Note 1

1 - 7, 9, 12 - 15 8, 10, 11 16

1 - 7, 9, 12 - 15 8 10, 11, 16

- 8, 11 16 1 - 7, 9, 12 - 15 10

1 - 7, 9, 12 - 15 8 10, 11, 16

3 - 6, 8 - 13 1, 2, 7 14

METHOD

TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS

PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD

TEST READ AND RECORD

OSCILLATOR

50kHz 25kHz

7-363

Specifications CD4020BMS, CD4024BMS, CD4040BMS

TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS (Continued)

OSCILLATOR

FUNCTION OPEN GROUND VDD 9V ± -0.5V

Static Burn-In 2

3 - 6, 8 - 13 7 1, 2, 14

Note 1
Dynamic Burn-

8, 10, 13 2, 7 14 3 - 6, 9, 11, 12 1

In Note 1
Irradiation

3 - 6, 8 - 13 7 1, 2, 14

Note 2
PART NUMBER CD4040BMS
Static Burn-In 1

1 - 7, 9, 12 - 15 8, 10, 11 16

Note 1
Static Burn-In 2

1 - 7, 9, 12 - 15 8 10, 11, 16

Note 1
Dynamic Burn-

- 8, 11 16 1 - 7, 9, 12 - 15 10

In Note 1
Irradiation

1 - 7, 9, 12 - 15 8 10, 11, 16

Note 2

NOTE:

1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V

2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,
VDD = 10V ± 0.5V

50kHz 25kHz

Functional Diagrams

VDD

16

INPUT

PULSES

RESET

10

14 STAGE

RIPPLE

COUNTER

11

8

VSS

CD4020BMS CD4024BMS CD4040BMS

9
7
5
4
6
13
12
14
15

1
2
3

Q1
Q4
Q5
Q6
Q7
Q8
Q9
Q10
Q11
Q12
Q13
Q14

1

INPUT
PULSES

2

RESET

12 BUFFERED OUTPUTS

NC = 8, 10, 13

VDD

14

7 STAGE

RIPPLE

COUNTER

7

VSS

VDD

16

10

12

Q1

11

Q2

9

Q3

6

Q4

5

Q5

4

Q6

3

Q7

INPUT

PULSES

7 BUFFERED OUTPUTS

11

RESET

12 STAGE

RIPPLE

COUNTER

8

VSS

Q1

9
7

Q2

6

Q3

5

Q4

3

Q5

2

Q6

4

Q7

13

Q8
Q9

12
14

Q10

15

Q11

1

Q12

12 BUFFERED OUTPUTS

7-364

Logic Diagrams

CD4020BMS, CD4024BMS, CD4040BMS

Ø1 Q1

Ø*

R

*

VDD

FF1

Ø1RQ1

Q1

Ø2 Q2

FF2

Ø2RQ2

Ø3 Q13

Ø3 Q13

FF3 - FF13

Ø14 Q14

FF14

Ø14RQ14

*INPUTS PROTECTED

BY COS/MOS PROTECTION
NETWORK

Q1

VSS

Q4 Q13 Q14

FIGURE 1. LOGIC DIAGRAM FOR CD4020BMS

Ø1 Q1

Ø*

R

*

VDD

FF1

Ø1RQ1

Q1

Ø2 Q2

FF2

Ø2RQ2

Ø3 Q6

Ø3 Q6

FF3 - FF6

Ø7 Q7

FF14

Ø7RQ7

*INPUTS PROTECTED

BY COS/MOS PROTECTION
NETWORK

Q1

VSS

Q2

Q3 Q6

Q7

FIGURE 2. LOGIC DIAGRAM FOR CD4024BMS

Ø1 Q1

Ø*

R

*

VDD

FF1

Ø1RQ1

Q1

Ø2 Q2

FF2

Ø2RQ2

Ø3 Q11

Ø3 Q11

FF3 - FF11

Ø7 Q12

FF12

Ø7RQ12

*INPUTS PROTECTED

BY COS/MOS PROTECTION
NETWORK

Q1

VSS

FIGURE 3. LOGIC DIAGRAM FOR CD4040BMS

Q2

Q3 Q11

Q12

7-365

CD4020BMS, CD4024BMS, CD4040BMS

Typical Performance Characteristics

AMBIENT TEMPERATURE (TA) = +25oC

30

25

20

15

10

5

OUTPUT LOW (SINK) CURRENT (IOL) (mA)

0 5 10 15

GATE-TO-SOURCE VOLTAGE (VGS) = 15V

10V

5V

DRAIN-TO-SOURCE VOLTA GE (VDS) (V)

FIGURE 4. TYPICAL OUTPUT LOW (SINK) CURRENT

CHARACTERISTICS

DRAIN-TO-SOURCE VOLTA GE (VDS) (V)

AMBIENT TEMPERATURE (TA) = +25oC

GATE-TO-SOURCE VOLTAGE (VGS) = -5V

-10V

AMBIENT TEMPERATURE (TA) = +25oC

15.0

12.5

10.0

7.5

5.0

2.5

OUTPUT LOW (SINK) CURRENT (IOL) (mA)

0 5 10 15

GATE-TO-SOURCE VOLTAGE (VGS) = 15V

10V

5V

DRAIN-TO-SOURCE VOLTA GE (VDS) (V)

FIGURE 5. MINIMUM OUTPUT LOW (SINK) CURRENT

CHARACTERISTICS

0-5-10-15

0

-5

-10

-15

-20

DRAIN-TO-SOURCE VOLTA GE (VDS) (V)

AMBIENT TEMPERATURE (TA) = +25oC

GATE-TO-SOURCE VOLTAGE (VGS) = -5V

-10V

0-5-10-15

0

-5

-10

-25

-15V

-30

FIGURE 6. TYPICAL OUTPUT HIGH (SOURCE) CURRENT

CHARACTERISTICS

AMBIENT TEMPERATURE (TA) = +25oC

200

150

100

50

TRANSITION TIME (tTHL, tTLH) (ns)

0

0 40 60 80 10020

SUPPL Y VOLT AGE (VDD) = 5V

10V
15V

LOAD CAPACITANCE (CL) (pF)

FIGURE 8. TYPICAL TRANSITION TIME AS A FUNCTION OF

LOAD CAPACITANCE

-15V

OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)

FIGURE 7. MINIMUM OUTPUT HIGH (SOURCE) CURRENT

CHARACTERISTICS

AMBIENT TEMPERATURE (TA) = +25oC

300

200

(φ TO Q1)

100

PROPAGATION DELAY TIME (tPHL, tPLH) (ns)

0 40608010020

SUPPL Y VOLT AGE (VDD) = 5V

10V

15V

LOAD CAPACITANCE (CL) (pF)

FIGURE 9. TYPICAL PROPAGATION DELAY TIME AS A

FUNCTION OF LOAD CAPACITANCE (φ TO Q1))

-15

OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)

7-366

CD4020BMS, CD4024BMS, CD4040BMS

Typical Performance Characteristics (Continued)

5

10

8

AMBIENT TEMPERATURE (TA) = +25oC

6
4

2

SUPPL Y VOLT AGE (VDD) = 5V

4

10

8
6

4
2

3

10

8
6

4
2

2

10

8
6

POWER DISSIPATION (PD) (µW)

4
2

10

11010210

86428642864286428642

INPUT PULSE FREQUENCY (fφ) (kHz)

5V

3

10V

10V

CD = 15pF
CL = 50pF

4

10

5

10

∅

p
n

∅

∅

p
n

∅

ON FIRST STAGE ONLY

*

R

∅

p
n

R R

∅

1

*

Q

Q

∅

p
n

Q

∅

FIGURE 10. TYPICAL DYNAMIC POWER DISSIPATION AS A

FUNCTION OF INPUT PULSE FREQUENCY FOR
CD4020BMS

Chip Dimensions and Pad Layouts

Dimensions in parentheses are in millimeters
and are derived from the basic inch dimensions
as indicated. Grid graduations are in mils (10

FIGURE 11. DETAIL OF TYPICAL FLIP-FLOP STAGES

-3

inch)

DIMENSIONS AND PAD LAYOUT FOR CD4020BMS. DIMEN-

SIONS AND PAD LAYOUT FOR CD4040BMS ARE IDENTICAL

METALLIZATION: Thickness: 11kÅ− 14kÅ, AL.
PASSIVATION: 10.4kÅ - 15.6kÅ, Silane
BOND PADS: 0.004 inches X 0.004 inches MIN
DIE THICKNESS: 0.0198 inches - 0.0218 inches

DIMENSIONS AND PAD LAYOUT FOR CD4024BMSH

7-367

CD4020BMS, CD4024BMS, CD4040BMS

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