Datasheet CD4010BMS Datasheet (Intersil Corporation)

CD4010BMS

November 1994 File Number 3078

CMOS Hex Buffer/Converter

CD4010BMS Hex Buffer/Converter may be used as CMOS
to TTL or DTL logic-level converter or CMOS high-sink-cur­rent driver.

The CD4050B is thepreferred hex buffer replacement for the
CD4010BMS in all applications except multiplexers.The
CD4010BMS is supplied in these 16 lead outline packages:

Braze Seal DIP H4S
Frit Seal DIP H1E
Ceramic Flatpack H6W

Pinout

CD4010BMS

TOP VIEW

16

VCC

G = A

A

H = B

B

I = C

C

VSS

NC = NO CONNECTION

1
2
3
4
5
6
7
8

VDD

15

L = F

14

F

13

NC

12

K = E

11

E

10

J = D

9

D

Features

• Non-Inverting Type

• High-Voltage Type (20V Rating)

• 100% Tested for Quiescent Current at 20V

• Maximum Input Current of 1µA at 18V Over Full

Package-Temperature Range;

o

- 100nA at 18V and +25

C

• 5V, 10V and 15V Parametric Ratings

Applications

• CMOS To DTL/TTL Hex Converter

• CMOS Current “Sink” or “Source” Driver

• CMOS High-to-Low Logic-Level Converter

• Multiplexer - 1 to 6 or 6 to 1

Functional Diagram

32

NC

VCC

VSS

VDD

A

54

B

76

C

910

13

16

D

1

8

11 12

E

14 15

F

G = A

H = B

I = C

J = D

K = E

L = F

4-1

NC = NO CONNECTION

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

CD4010BMS

Absolute Maximum Ratings Reliability Information

DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . .-0.5V to +20V

(Voltage Referenced to VSS Terminals)

Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to VDD +0.5V

DC Input Current, Any One Input. . . . . . . . . . . . . . . . . . . . . . . . .±10mA

Operating Temperature Range . . . . . . . . . . . . . . . -55oC to +125oC

Package Types D, F, K, H

Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC

At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for

10s Maximum

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS (NOTE 1)

Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC-2µA

VDD = 18V, VIN = VDD or GND 3 -55oC-2µA

Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25oC -100 - nA

VDD = 18V 3 -55oC -100 - nA

Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA

VDD = 18V 3 -55oC - 100 nA
Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV
Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 3.0 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 8.0 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 24.0 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.2 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -0.8 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -0.45 mA
Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -1.5 mA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V
P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V
Functional F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH>

VDD = 20V, VIN = VDD or GND 7 +25oC
VDD = 18V, VIN = VDD or GND 8A +125oC
VDD = 3V, VIN = VDD or GND 8B -55oC

Input Voltage Low
(Note 2)

Input Voltage High
(Note 2)

Input Voltage Low
(Note 2)

Input Voltage High
(Note 2)

NOTES: 1. All voltages referenced to device GND, 100% testing being im-

plemented.

2. Go/No Go test with limits applied to inputs

VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 1.5 V

VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 V

VIL VDD = 15V, VOH > 13.5V,

VOL < 1.5V

VIH VDD = 15V, VOH > 13.5V,

VOL < 1.5V

Thermal Resistance. . . . . . . . . . . . . . . . θ

Ceramic DIP and FRIT Package . . . . 80oC/W 20oC/W

Flatpack Package. . . . . . . . . . . . . . . . 70oC/W 20oC/W

Maximum Package Power Dissipation (PD) at +125oC

For TA = -55oC to +100oC (Package Type D, F, K) . . . . . .500mW

For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate

Linearity at 12mW/oC to 200mW

Device Dissipation per Output Transistor. . . . . . . . . . . . . . . .100mW

For TA = Full Package Temperature Range (All Package Types)

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175oC

GROUP A

SUBGROUPS TEMPERATURE

2 +125oC - 200 µA

2 +125oC -1000 - nA

2 +125oC - 1000 nA

1, 2, 3 +25oC, +125oC, -55oC4V

1, 2, 3 +25oC, +125oC, -55oC11 V

3. Foraccuracy, voltageismeasured differentiallytoVDD. Limitis

0.050V max.

ja

LIMITS

VDD/2

VOL <
VDD/2

θ

jc

UNITSMIN MAX

V

4-2

CD4010BMS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP A

PARAMETER SYMBOL CONDITIONS (NOTE 1, 2)

Propagation Delay TPHL VDD = 5V, VIN = VDD or GND 9 +25oC - 130 ns

Propagation Delay TPLH VDD = 5V, VIN = VDD or GND 9 +25oC - 200 ns

Transition Time TTHL VDD = 5V, VIN = VDD or GND 9 +25oC - 70 ns

Transition Time TTLH VDD = 5V, VIN = VDD or GND 9 +25oC - 350 ns

NOTES:

1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

2. -55oC and +125oC limits guaranteed, 100% testing being implemented.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC- 1 µA

VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC- 2 µA

VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC- 2 µA

Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC, -

Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC, -

Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC, -

Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC, -

Output Current (Sink) IOL4 VDD = 4.5V, VOUT = 0.4V 1, 2 +25oC 2.6 - mA

Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 2.1 - mA

Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC 5.6 - mA

Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC 16.0 - mA

Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC - -0.15 mA

Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC - -0.58 mA

Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC - -0.33 mA

Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC - -1.1 mA

SUBGROUPS TEMPERATURE

10, 11 +125oC, -55oC - 175 ns

10, 11 +125oC, -55oC - 270 ns

10, 11 +125oC, -55oC - 94 ns

10, 11 +125oC, -55oC - 473 ns

+125oC-30µA

+125oC-60µA

+125oC - 120 µA

55oC

55oC

55oC

55oC

+125oC 1.8 - mA

-55oC 3.2 - mA

-55oC 3.75 - mA

-55oC 10.0 - mA

-55oC 30.0 - mA

-55oC - -0.25 mA

-55oC - -1.0 mA

-55oC - -0.55 mA

-55oC - -1.65 mA

LIMITS

UNITSMIN MAX

LIMITS

UNITSMIN MAX

-50mV

-50mV

4.95 - V

9.95 - V

4-3

CD4010BMS

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

LIMITS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Input Voltage Low VIL VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, -

55oC

Input Voltage High VIH VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, -

55oC

Propagation Delay TPHL VDD = 10V, VCC = 10V 1, 2, 3 +25oC - 70 ns

VDD = 15V, VCC = 15V 1, 2, 3 +25oC - 50 ns

Propagation Delay TPLH VDD = 10V, VCC = 10V 1, 2, 3 +25oC - 100 ns

VDD = 15V, VCC = 15V 1, 2, 3 +25oC - 70 ns

Propagation Delay TPHL VDD = 10V, VCC = 5V 1, 2, 3 +25oC - 70 ns

VDD = 15V, VCC = 5V 1, 2, 3 +25oC - 40 ns

Propagation Delay TPLH VDD = 10V, VCC = 5V 1, 2, 3 +25oC - 100 ns

VDD = 15V, VCC = 5V 1, 2, 3 +25oC - 70 ns

Transition Time TTHL VDD = 10V 1, 2, 3 +25oC - 40 ns

VDD = 15V 1, 2, 3 +25oC - 30 ns

Transition Time TTLH VDD = 10V 1, 2, 3 +25oC - 150 ns

VDD = 15V 1, 2, 3 +25oC - 110 ns

Input Capacitance CIN Any Input 1, 2 +25oC - 7.5 pF

NOTES:

1. All voltages referenced to device GND.

2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial
design release and upon design changes which would affect these characteristics.

3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

-3V

7-V

UNITSMIN MAX

TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

LIMITS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Supply Current IDD VDD = 20V, VIN = VDD or GND 1, 4 +25oC - 7.5 µA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1, 4 +25oC -2.8 -0.2 V
N Threshold Voltage Delta ∆VNTH VDD = 10V, ISS = -10µA 1, 4 +25oC-±1V
P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1, 4 +25oC 0.2 2.8 V
P Threshold Voltage Delta ∆VPTH VSS = 0V, IDD = 10µA 1, 4 +25oC-±1V
Functional F VDD = 18V, VIN = VDD or GND 1 +25oC VOH >

VDD = 3V, VIN = VDD or GND

Propagation Delay Time TPHL

TPLH

NOTES: 1. All voltages referenced to device GND.

2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

Supply Current - MSI-1 IDD ± 0.2µA
Output Current (Sink) IOL5 ± 20% x Pre-Test Reading
Output Current (Source) IOH5A ± 20% x Pre-Test Reading

VDD = 5V, VCC = 5V 1, 2, 3, 4 +25oC - 1.35 x

TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC

PARAMETER SYMBOL DELTA LIMIT

3. See Table 2 for +25oC limit.

4. Read and Record

VDD/2

VOL <
VDD/2

+25oC

Limit

UNITSMIN MAX

V

ns

4-4

CD4010BMS

TABLE 6. APPLICABLE SUBGROUPS

MIL-STD-883

CONFORMANCE GROUP

Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A, RON
Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A, RON
Interim Test 2 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A, RON

PDA (Note 1) 100% 5004 1, 7, 9, Deltas

Interim Test 3 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A, RON

PDA (Note 1) 100% 5004 1, 7, 9, Deltas
Final Test 100% 5004 2, 3, 8A, 8B, 10, 11
Group A Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroups 1, 2, 3, 9, 10, 11

Subgroup B-6 Sample 5005 1, 7, 9

Group D Sample 5005 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3

NOTE:

1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.

CONFORMANCE GROUPS

Group E Subgroup 2 5005 1, 7, 9 Table 4 1, 9 Table 4

METHOD GROUP A SUBGROUPS READ AND RECORD

TABLE 7. TOTAL DOSE IRRADIATION

MIL-STD-883

METHOD

PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD

TEST READ AND RECORD

TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS

OSCILLATOR

FUNCTION OPEN GROUND VDD 9V ± -0.5V

50kHz 25kHz

Static Burn-In 1 (Note 1) 2, 4, 6, 10, 12, 13, 15 3, 5, 7 - 9, 11, 14 1, 16
Static Burn-In 2 (Note 1) 2, 4, 6, 10, 12, 13, 15 8 1, 3, 5, 7, 9, 11, 14, 16
DynamicBurn-In(Note3) 13 8 1, 16 2, 4, 6, 10, 12, 15 3, 5, 7, 9, 11, 14
Irradiation (Note 2) 2, 4, 6, 10, 12, 13, 15 8 1, 3, 5, 7, 9, 11, 14, 16

NOTES:

1. Each pin except VDD and Pin 1 and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V

2. Each pin except VDD and Pin 1 and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,
VDD = 10V ± 0.5V

3. Each pin except VDD and Pin 1 and GND will have a series resistor of 4.75K ± 5%, VDD = 18V ± 0.5V

Schematic Diagram

CONFIGURATION:

HEX COS/MOS TO DTL OR TTL
CONVERTER (NON-INVERTING)

*

INPUT

VDD

GND

VDD

NN

VCC

WIRING SCHEDULE:

VSS

*ALL INPUTS ARE PROTECTED

BY CMOS PROTECTION
NETWORK

PNP

OUTPUT

CONNECT VCC TO DTL OR
TTL SUPPLY
CONNECT VDD TO COS/MOS
SUPPLY

VCC
GND

VDD

VSS

4-5

Typical Performance Characteristics

AMBIENT TEMPERATURE (TA) = +25oC
COLLECTOR SUPPLY VOLTAGE (VCC) = 5V
DRAIN SUPPLY VOLTAGE (VDD) = 5V

CD4010BMS

AMBIENT TEMPERATURE (TA) = +25oC
COLLECTOR SUPPLY VOLTAGE (VCC) = +5V
DRAIN SUPPLY VOLTAGE (VDD) = +10V

5

5

VI VO

4

3

MIN

2

OUTPUT VOLTAGE (VO)

1

012345

MAX

INPUT VOLTAGE (VI)

FIGURE 1. MINIMUM AND MAXIMUM VOLTAGE TRANSFER

CHARACTERISTICS (VDD = 5)

AMBIENT TEMPERATURE (TA) = +25oC
COLLECTOR SUPPLY VOLTAGE (VCC) = +5V
DRAIN SUPPLY VOLTAGE (VDD) = +15V

5

4

3

2

OUTPUT VOLTAGE (VO)

1

MIN

MAX

4

VI VO

3

2

OUTPUT VOLTAGE (VO)

1

MIN

024

INPUT VOLTAGE (VI)

MAX

6810

FIGURE 2. MINIMUM AND MAXIMUM VOLATGE TRANSFER

CHARACTERISTICS (VDD = 10)

COLLECTOR SUPPLY VOLTAGE (VCC) = +5

5

4

3

2

OUTPUT VOLTAGE (VD)

1

+10V

SUPPLY VOLTS (VDD) = +5

+15V

= (TA) +125oC

) - 55oC

= (T

A

VI VO

024

INPUT VOLTAGE (VI)

6810

12 15

FIGURE 3. MINIMUM AND MAXIMUM VOLATGE TRANSFER

CHARACTERISTICS (VDD = 15)

AMBIENT TEMPERATURE (TA) = +25oC
TYPICAL TEMPERATURE COEFFICIENT
FOR ID = -0.3%/

100

80

60

40

20

OUTPUT LOW (SINK) CURRENT (IOL) (mA)

0 2468101214

o

C

GATE-TO-SOURCE
VOLTAGE (VGS) = 15V

10V

5V

DRAIN-TO-SOURCE VOLTS (VDS)

FIGURE 5. TYPICAL OUTPUT LOW (SINK) CURRENT

CHARACTERISTICS

02468101214

INPUT VOLTAGE (VI)

FIGURE 4. TYPICAL VOLATGE TRANSFER CHARACTERIS-

TICS AS A FUNCTION OF TEMPERATURE

AMBIENT TEMPERATURE (TA) = +25oC

60

50

40

30

20

10

OUTPUT LOW (SINK) CURRENT (IOL) (mA)

0 5 10 15 20

GATE-TO-SOURCE
VOLTAGE (VGS) = 15V

10V

5V

DRAIN-TO-SOURCE VOLTS (VDS)

FIGURE 6. MINIMUM OUTPUT LOW (SINK) CURRENT

CHARACTERISTICS

4-6

CD4010BMS

Typical Performance Characteristics (Continued)

DRAIN-TO-SOURCE VOLTAGE (VDS) (V)

0-1-2-3-4-5-6-7

GATE-TO-SOURCE
VOLTAGE (VGS) = -5V

-10V

-15V

AMBIENT TEMPERATURE (TA) = +25oC

-1

-2

-3

-4

-5

-6

-7

-8

-9

-10

-11

-12

FIGURE 7. TYPICAL OUTPUT HIGH (SOURCE) CURRENT

CHARACTERISTICS

AMBIENT TEMPERATURE

120

) = +25oC

(T

A

100

80

60

40

SUPPLY VOLTAGE (VDD) = 5V

10V

15V

DRAIN-TO-SOURCE VOLTAGE (VDS) (V)

GATE-TO-SOURCE
VOLTAGE (VGS) = -5V

-10V

-15V

OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)

AMBIENT TEMPERATURE (TA) = +25oC

FIGURE 8. MINIMUM OUTPUT HIGH (SOURCE) CURRENT

CHARACTERISTICS

80

AMBIENT TEMPERATURE
(T

) = +25oC

A

70

60

50

40

30

20

0-1-2-3-4-5-6-7

-2

-4

-6

-8

-10

-12

SUPPLY VOLTAGE (VDD) = 5V

10V

15V

OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)

20

0 20 40 60 80 100 120

LOW-TO-HIGH PROPAGATION DELAY TIME (tPLH) (ns)

LOAD CAPACITANCE (CL) (pF)

FIGURE 9. TYPICAL LOW-TO-HIGH PROPAGATION

DELAYTIME vs LOAD CAPACITANCE

AMBIENT TEMPERATURE (TA) = +25oC

SUPPLY VOLTAGE (VDD) = 5V

250

200

150

100

50

LOW-TO-HIGH TRANSITION TIME (tPLH) (ns)

0 20 40 60 80 100 120

LOAD CAPACITANCE (CL) (pF)

10V

15V

FIGURE 11. TYPICAL LOW-TO-HIGH TRANSITION TIME vs

LOAD CAPACITANCE

10

0102030405060708090100

HIGH-TO-LOW PROPAGATION DELAY TIME (tPHL) (ns)

LOAD CAPACITANCE (CL) (pF)

FIGURE 10. TYPICAL HIGH-TO-LOW PROPAGATION

DELAYTIME vs LOAD CAPACITANCE

AMBIENT TEMPERATURE (TA) = +25oC

60

50

40

(tTHL) (ns)

30

20

HIGH-TO-LOW TRANSITION TIME

10

01020 30405060708090100

LOAD CAPACITANCE (CL) (pF)

SUPPLY VOLTAGE (VDD) = 5V

10V

15V

FIGURE 12. TYPICAL HIGH-TO-LOW TRANSITION TIME vs

LOAD CAPACITANCE

4-7

CD4010BMS

Typical Performance Characteristics (Continued)

4

10

8

AMBIENT TEMPERATURE

6

) = +25oC

(T

4

A

2

SUPPLY VOLTAGE
(VDD) = 15V

3

10

8
6
4

2
2

10

8
6
4

POWER PER INVERTER/BUFFER (µW)

2

10

10

2468

LOAD CAPACITANCE (CL) = 50pF

CL = 15pF

2

10

INPUT FREQUENCY (fφ) kHz

FIGURE 13. TYPICAL DISSIPATION CHARACTERISTICS

Chip Dimensions and Pad Layouts

10V

5V

2468

10

10V

24

3

68

4

10

METALLIZATION: Thickness: 11kÅ− 14kÅ, AL.
PASSIVATION: 10.4kÅ - 15.6kÅ, Silane
BOND PADS: 0.004 inches X 0.004 inches MIN
DIE THICKNESS: 0.0198 inches - 0.0218 inches

Dimensions in parentheses are in millimeters
and are derived from the basic inch dimensions
as indicated. Grid graduations are in mils (10

-3

inch)

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

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4-8