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CD4001MD8
Datasheet (NSC)
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Datasheet CD4001MD8 Datasheet (NSC)

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Page 1
TL/F/5939
CD4001BM/CD4001BC Quad 2-Input NOR Buffered B Series Gate
CD4011BM/CD4011BC Quad 2-Input NAND Buffered B Series Gate
March 1988
CD4001BM/CD4001BC Quad 2-Input NOR Buffered B Series Gate CD4011BM/CD4011BC Quad 2-Input NAND Buffered B Series Gate
General Description
These quad gates are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and P-chan­nel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B se­ries output drive. The devices also have buffered outputs which improve transfer characteristics by providing very high gain.
All inputs are protected against static discharge with diodes to V
DD
and VSS.
Features
Y
Low power TTL Fan out of 2 driving 74L compatibility or 1 driving 74LS
Y
5V–10V–15V parametric ratings
Y
Symmetrical output characteristics
Y
Maximum input leakage 1 m A at 15V over full tempera­ture range
Schematic Diagrams
TL/F/5939– 1
CD4001BC/BM
TL/F/5939– 2
(/4 of device shown
J
eAa
B Logical ‘‘1’’eHigh Logical ‘‘0’’
e
Low
*All inputs protected by standard
CMOS protection circuit.
TL/F/5939– 5
CD4011BC/BM
TL/F/5939– 6
(/4 of device shown
J
e
A#B Logical ‘‘1’’eHigh Logical ‘‘0’’
e
Low
*All inputs protected by standard
CMOS protection circuit.
C
1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.
Page 2
Absolute Maximum Ratings (Notes 1 and 2)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications.
Voltage at any Pin
b
0.5V to V
DD
a
0.5V
Power Dissipation (PD)
Dual-In-Line 700 mW Small Outline 500 mW
V
DD
Range
b
0.5 VDCtoa18 V
DC
Storage Temperature (TS)
b
65§Ctoa150§C
Lead Temperature (T
L
)
(Soldering, 10 seconds) 260
§
C
Operating Conditions
Operating Range (VDD)3V
DC
to 15 V
DC
Operating Temperature Range
CD4001BM, CD4011BM
b
55§Ctoa125§C
CD4001BC, CD4011BC
b
40§Ctoa85§C
DC Electrical Characteristics CD4001BM, CD4011BM (Note 2)
Symbol Parameter Conditions
b
55§C
a
25§C
a
125§C
Units
Min Max Min Typ Max Min Max
I
DD
Quiescent Device V
DD
e
5V, V
IN
e
VDDor V
SS
0.25 0.004 0.25 7.5 mA
Current V
DD
e
10V, V
IN
e
VDDor V
SS
0.50 0.005 0.50 15 m A
V
DD
e
15V, V
IN
e
VDDor V
SS
1.0 0.006 1.0 30 m A
V
OL
Low Level V
DD
e
5V 0.05 0 0.05 0.05 V
Output Voltage V
DD
e
10VlI
O
l
k
1 mA 0.05 0 0.05 0.05 V
V
DD
e
15V ( 0.05 0 0.05 0.05 V
V
OH
High Level V
DD
e
5V 4.95 4.95 5 4.95 V
Output Voltage V
DD
e
10VlI
O
l
k
1 mA 9.95 9.95 10 9.95 V
V
DD
e
15V ( 14.95 14.95 15 14.95 V
V
IL
Low Level V
DD
e
5V, V
O
e
4.5V 1.5 2 1.5 1.5 V
Input Voltage V
DD
e
10V, V
O
e
9.0V 3.0 4 3.0 3.0 V
V
DD
e
15V, V
O
e
13.5V 4.0 6 4.0 4.0 V
V
IH
High Level V
DD
e
5V, V
O
e
0.5V 3.5 3.5 3 3.5 V
Input Voltage V
DD
e
10V, V
O
e
1.0V 7.0 7.0 6 7.0 V
V
DD
e
15V, V
O
e
1.5V 11.0 11.0 9 11.0 V
I
OL
Low Level Output V
DD
e
5V, V
O
e
0.4V 0.64 0.51 0.88 0.36 mA
Current V
DD
e
10V, V
O
e
0.5V 1.6 1.3 2.25 0.9 mA
(Note 3) V
DD
e
15V, V
O
e
1.5V 4.2 3.4 8.8 2.4 mA
I
OH
High Level Output V
DD
e
5V, V
O
e
4.6V
b
0.64
b
0.51b0.88
b
0.36 mA
Current V
DD
e
10V, V
O
e
9.5V
b
1.6
b
1.3b2.25
b
0.9 mA
(Note 3) V
DD
e
15V, V
O
e
13.5V
b
4.2
b
3.4b8.8
b
2.4 mA
I
IN
Input Current V
DD
e
15V, V
IN
e
0V
b
0.10
b
10
b
5
b
0.10
b
1.0 mA
V
DD
e
15V, V
IN
e
15V 0.10 10
b
5
0.10 1.0 mA
Connection Diagrams
CD4001BC/CD4001BM
Dual-In-Line Package
TL/F/5939– 3
Top View
CD4011BC/CD4011BM
Dual-In-Line Package
TL/F/5939– 4
Top View
Order Number CD4001B or CD4011B
2
Page 3
DC Electrical Characteristics CD4001BC, CD4011BC (Note 2)
Symbol Parameter Conditions
b
40§C
a
25§C
a
85§C
Units
Min Max Min Typ Max Min Max
I
DD
Quiescent Device V
DD
e
5V, V
IN
e
VDDor V
SS
1 0.004 1 7.5 mA
Current V
DD
e
10V, V
IN
e
VDDor V
SS
2 0.005 2 15 mA
V
DD
e
15V, V
IN
e
VDDor V
SS
4 0.006 4 30 mA
V
OL
Low Level V
DD
e
5V 0.05 0 0.05 0.05 V
Output Voltage V
DD
e
10VlI
O
l
k
1 mA 0.05 0 0.05 0.05 V
V
DD
e
15V ( 0.05 0 0.05 0.05 V
V
OH
High Level V
DD
e
5V 4.95 4.95 5 4.95 V
Output Voltage V
DD
e
10VlI
O
l
k
1 mA 9.95 9.95 10 9.95 V
V
DD
e
15V ( 14.95 14.95 15 14.95 V
V
IL
Low Level V
DD
e
5V, V
O
e
4.5V 1.5 2 1.5 1.5 V
Input Voltage V
DD
e
10V, V
O
e
9.0V 3.0 4 3.0 3.0 V
V
DD
e
15V, V
O
e
13.5V 4.0 6 4.0 4.0 V
V
IH
High Level V
DD
e
5V, V
O
e
0.5V 3.5 3.5 3 3.5 V
Input Voltage V
DD
e
10V, V
O
e
1.0V 7.0 7.0 6 7.0 V
V
DD
e
15V, V
O
e
1.5V 11.0 11.0 9 11.0 V
I
OL
Low Level Output V
DD
e
5V, V
O
e
0.4V 0.52 0.44 0.88 0.36 mA
Current V
DD
e
10V, V
O
e
0.5V 1.3 1.1 2.25 0.9 mA
(Note 3) V
DD
e
15V, V
O
e
1.5V 3.6 3.0 8.8 2.4 mA
I
OH
High Level Output V
DD
e
5V, V
O
e
4.6V
b
0.52
b
0.44b0.88
b
0.36 mA
Current V
DD
e
10V, V
O
e
9.5V
b
1.3
b
1.1b2.25
b
0.9 mA
(Note 3) V
DD
e
15V, V
O
e
13.5V
b
3.6
b
3.0b8.8
b
2.4 mA
I
IN
Input Current V
DD
e
15V, V
IN
e
0V
b
0.30
b
10
b
5
b
0.30
b
1.0 mA
V
DD
e
15V, V
IN
e
15V 0.30 10
b
5
0.30 1.0 mA
AC Electrical Characteristics* CD4001BC, CD4001BM
T
A
e
25§C, Input tr;t
f
e
20 ns. C
L
e
50 pF, R
L
e
200k. Typical temperature coefficient is 0.3%/§C.
Symbol Parameter Conditions Typ Max Units
t
PHL
Propagation Delay Time, V
DD
e
5V 120 250 ns
High-to-Low Level V
DD
e
10V 50 100 ns
V
DD
e
15V 35 70 ns
t
PLH
Propagation Delay Time, V
DD
e
5V 110 250 ns
Low-to-High Level V
DD
e
10V 50 100 ns
V
DD
e
15V 35 70 ns
t
THL,tTLH
Transition Time V
DD
e
5V 90 200 ns
V
DD
e
10V 50 100 ns
V
DD
e
15V 40 80 ns
C
IN
Average Input Capacitance Any Input 5 7.5 pF
C
PD
Power Dissipation Capacity Any Gate 14 pF
*AC Parameters are guaranteed by DC correlated testing.
Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’ they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device operation.
Note 2: All voltages measured with respect to V
SS
unless otherwise specified.
Note 3: I
OL
and IOHare tested one output at a time.
3
Page 4
AC Electrical Characteristics* CD4011BC, CD4011BM
T
A
e
25§C, Input tr;t
f
e
20 ns. C
L
e
50 pF, R
L
e
200k. Typical Temperature Coefficient is 0.3%/§C.
Symbol Parameter Conditions Typ Max Units
t
PHL
Propagation Delay, V
DD
e
5V 120 250 ns
High-to-Low Level V
DD
e
10V 50 100 ns
V
DD
e
15V 35 70 ns
t
PLH
Propagation Delay, V
DD
e
5V 85 250 ns
Low-to-High Level V
DD
e
10V 40 100 ns
V
DD
e
15V 30 70 ns
t
THL,tTLH
Transition Time V
DD
e
5V 90 200 ns
V
DD
e
10V 50 100 ns
V
DD
e
15V 40 80 ns
C
IN
Average Input Capacitance Any Input 5 7.5 pF
C
PD
Power Dissipation Capacity Any Gate 14 pF
*AC Parameters are guaranteed by DC correlated testing.
Typical Performance Characteristics
Typical Transfer Characteristics
TL/F/5939– 7
Typical Transfer Characteristics
TL/F/5939– 8
Typical Transfer Characteristics
TL/F/5939– 9
Typical Transfer Characteristics
TL/F/5939– 10
TL/F/5939– 11
FIGURE 5
TL/F/5939– 12
FIGURE 6
4
Page 5
Typical Performance Characteristics (Continued)
TL/F/5939– 13
FIGURE 7
TL/F/5939– 14
FIGURE 8
TL/F/5939– 15
FIGURE 9
TL/F/5939– 16
FIGURE 10
TL/F/5939– 17
FIGURE 11
TL/F/5939– 18
FIGURE 12
TL/F/5939– 19
FIGURE 13
TL/F/5939– 20
FIGURE 14
5
Page 6
CD4001BM/CD4001BC Quad 2-Input NOR Buffered B Series Gate
CD4011BM/CD4011BC Quad 2-Input NAND Buffered B Series Gate
Physical Dimensions inches (millimeters)
Ceramic Dual-In-Line Package (J)
Order Number CD4001BMJ, CD4001BCJ, CD40011BMJ or CD4011BCJ
NS Package Number J14A
Molded Dual-In-Line Package (N)
Order Number CD4001BMN, CD4001BCN, CD4011BMN or CD4011BCN
NS Package Number N14A
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness. be reasonably expected to result in a significant injury to the user.
National Semiconductor National Semiconductor National Semiconductor National Semiconductor Corporation Europe Hong Kong Ltd. Japan Ltd.
1111 West Bardin Road Fax: (
a
49) 0-180-530 85 86 13th Floor, Straight Block, Tel: 81-043-299-2309 Arlington, TX 76017 Email: cnjwge@tevm2.nsc.com Ocean Centre, 5 Canton Rd. Fax: 81-043-299-2408 Tel: 1(800) 272-9959 Deutsch Tel: (
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49) 0-180-530 85 85 Tsimshatsui, Kowloon Fax: 1(800) 737-7018 English Tel: (
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49) 0-180-532 93 58 Tel: (852) 2737-1600
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National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
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