Datasheet CD22100F, CD22100E Datasheet (Harris Semiconductor)

SEMICONDUCTOR

January 1997

CD22100

CMOS 4 x 4 Crosspoint Switch with Control Memory

High-Voltage Type (20V Rating)

Features

• Low ON Resistance . . . . . . . . . .75Ω (Typ) at VDD = 12V

• “Built-In” Control Latches

• Large Analog Signal Capability. . . . . . . . . . . . . . . ±V

DD

• 10MHz Switch Bandwidth

• Matched Switch Characteristics ∆R

V

= 12V

DD

= 18Ω (Typ) at

ON

• High Linearity - 0.5% Distortion (Typ) at f = 1kHz,
V

IN

= 5V

, VDD = 10V, and RL = 1kΩ

P-P

• Standard CMOS Noise Immunity

• 100% Tested for Maximum Quiescent Current at 20V

Ordering Information

PART

NUMBER

CD22100E -40 to 85 16 Ld PDIP E16.3
CD22100F -55 to 125 16 Ld CERDIP F16.3

TEMP . RANGE

(oC) PACKAGE PKG. NO.

Description

CD22100 combines a 4 x 4 array of crosspoints (transmis­sion gates) with a 4-line to 16-line decoder and 16 latch
circuits. Any one of the sixteen transmission gates (cross­points) can be selected by applying the appropriate four line

/2

address. The selected transmission gate can be turned on or
off by applying a logic one or zero, respectively, to the data
input and strobing the strobe input to a logic one. Any
number of the transmission gates can be ON simultaneously.
When the required operating power is applied to the
CD22100, the states of the 16 switches are indeterminate.
Therefore, all switches must be turned off by putting the
strobe high and data in low, and then addressing all switches
in succession.

Pinout

X2

DATA IN

STROBE

V

SS

CD22100

(PDIP, CERDIP)

TOP VIEW

1
2
3

C

4

D

5

B

6

A

7
8

Functional Diagram

DAT A

STROBE

16

V

DD

Y1

15
14

Y2

13

X4

12

X3

11

Y4

10

Y3

9

X1

6

A

5

B

3

ADDRESS

C

4

D

4-LINE TO 16-LINE DECODER

IN

7

2

16 CONTROL LATCHES

0 1 2 3

4 5 6 7

8 9 10 11

12 13 14 15

9 1 12 13

X1 X2 X3 X4

15

Y1

14

Y2

10

Y3

11

Y4

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright

© Harris Corporation 1997

4-184

File Number 1076.3

CD22100

Absolute Maximum Ratings Thermal Information

Supply Voltage (Referenced to VSS Terminal). . . . . . . . .-0.5 to 20V

Input Voltage (All Inputs) . . . . . . . . . . . . . . . . . . . . -0.5 to VDD 0.5V

Input Current (Any one input (Note 1)) . . . . . . . . . . . . . . . . . . . .±10mA

Power Dissipation

For TA = -40oC to 60oC (Package Type E) . . . . . . . . . . . . 500mW

For TA = 60oC to 85oC

(Package Type E) . . . . . . . . Derate Linearly 12mW/oC to 200mW

For TA = -55oC to 100oC (Package Type F) . . . . . . . . . . . 500mW

For TA = 100oC to 125oC

(Package Type F) . . . . . . . . Derate Linearly 12mW/oC to 200mW

Device Dissipation per Transmission Gate

For TA = Full Package Temper ature Range (All Types) . . . . . 100mW

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 175oC

Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC

Storage Temperature Range. . . . . . . . . . . . . . . -65oC ≤ TA≤ 150oC

Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC

Operating Conditions

Temperature Range

Package Type F. . . . . . . . . . . . . . . . . . . . . . . -55oC ≤ TA≤ 125oC

Package Type E. . . . . . . . . . . . . . . . . . . . . . . . -40oC ≤ TA≤ 85oC

Supply Voltage Range

For TA = Full Package Temperature Range . . . . . . . . . . . . . .3V to 18V

Electrical Specifications Values at -55

o

C, 25oC, 125oC Apply to F Package

Values at -40oC, 25oC, 85oC Apply to E Package

PARAMETER SYMBOL

TEST

CONDITIONS -55

V

DD

(V) MAX MAX MAX MAX MIN TYP MAX

o

C -40oC85oC 125oC25

STATIC CROSSPOINTS

Quiescent Device
Current

I

(Max) 1 5 5 5 150 150 - 0.04 5 µA

DD

1 10 10 10 300 300 - 0.04 10 µA
1 15 20 20 600 600 - 0.04 20 µA
1 20 100 100 3000 3000 - 0.08 100 µA

On Resistance R

(Max) Any Switch

ON

VIS = 0 to V

11 5 475 500 725 800 - 225 600 Ω

DD

12 10 135 145 205 230 - 85 180 Ω

- 12 100 110 155 175 - 75 135 Ω

13 15 70 75 110 125 - 65 95 Ω

∆R

Resistance ∆R

ON

ON

Between any
two switches

-5--- - -25- Ω

-10--- - -10-Ω

-12--- - -8- Ω

-15--- - -5- Ω

OFF Switch Leakage
Current

I

(Max) All switches

L

OFF, VIS = 18V

318 ±100 ±1000 - ±1 ±100

STATIC CONTROLS

Input Low Voltage V

(Max) OFF switch

IL

IL < 0.2µA

- 5 1.5 - - 1.5 V

-10 3 - - 3 V

-15 4 - - 4 V

Input High Voltage V

(Min) ON switch

IH

see R
characteristic

ON

- 5 3.5 3.5 - - V

-10 7 7 - - V

-15 11 11 - - V

Input Current I

(Max) Any control

IN

218±0.1 ±0.1 ±1 ±1-±10

VIN = 0, 18V

NOTES:

1. Maximum current through transmission gates (switches) = 25mA.

2. Determined by minimum feasible leakage measurement for automatic testing.

o

C

(Note 2)

-5

±0.1 µA

UNITSFIG.

nA

4-185

CD22100

Electrical Specifications T

= 25oC

A

TEST CONDITIONS

PARAMETER SYMBOL

f

IS

(kHz)

R

(kΩ)

VIS (V)

L

(Note 3)

V

(V)

DD

MIN TYP MAX UNITSFIGURE

DYNAMIC CROSSPOINTS

Propagation Delay Time,
(Switch ON) Signal Input to
Output

t

PHL

, t

PLH

5 - 10 5 5 - 30 60 ns

10 10 - 15 30 ns
15 15 - 10 20 ns

CL = 50pF; tR , tF = 20ns

Frequency Response (Any
Switch ON)

Sine Wave Response

f

3dB

16 1 1 5 10 - 40 - MHz

V

Sine Wav e Input,

20 log

OS

----------- -

V

-3dB=

IS

THD 1 1 5 10 - 0.5 - %

(Distortion)
Feedthrough (All switches OFF) F

DT

1.6 1 5 10 - -80 - dB
Sine Wave Input

Frequency for Signal Crosstalk F

CT

7-11010
Attenuation of 40dB Sine Wave Input - 1.5 - MHz
Attenuation of 110dB - - - - - 0.1 - kHz

Capacitance: C

IS

Xn to Ground - - - 5 - 15 - 18 - pF
Yn to Ground - - - 5 - 15 - 30 - pF
Feedthrough C

IOS

- - - - - 0.4 - pF

DYNAMIC CONTROLS

Propagation Delay Time: t

Strobe to Output
(Switch Turn-ON to High
Level)

Propagation Delay Time: t

Data-In to Output
(Turn-ON to High Level)

Propagation Delay Time: t

Address to Output
(Turn-ON to High Level)

Propagation Delay Time: t

Strobe to Output
(Switch Turn-OFF)

Propagation Delay Time: t

Data-In to Output
(Turn-ON to Low Level)

Propagation Delay Time: t

Address to Output
(Turn-OFF)

PZH

PZH

PZH

PHZ

PZL

PHZ

8RL = 1kΩ,

CL = 50pF,
tR , tF = 20ns

9RL = 1kΩ,

CL = 50pF,
tR , tF = 20ns

10 RL = 1kΩ,

CL = 50pF,
tR , tF = 20ns

8RL = 1kΩ,

CL = 50pF,
tR , tF = 20ns

9RL = 1kΩ,

CL = 50pF,
tR , tF = 20ns

10 RL = 1kΩ,

CL = 50pF,
tR , tF = 20ns

5 - 300 600 ns
10 - 125 250 ns
15 - 80 160 ns

5 - 110 220 ns
10 - 40 80 ns
15 - 25 50 ns

5 - 350 700 ns
10 - 135 270 ns
15 - 90 180 ns

5 - 165 330 ns
10 - 85 170 ns
15 - 70 140 ns

5 - 210 420 ns
10 - 110 220 ns
15 - 100 200 ns

5 - 435 870 ns
10 - 210 420 ns
15 - 160 320 ns

4-186

CD22100

Electrical Specifications T

= 25oC (Continued)

A

PARAMETER SYMBOL

Minimum Setup Time

t

S

Data-In to Strobe, Address

Minimum Hold Time

t

H

Data-In to Strobe, Address

Maximum Switching Frequency f

Minimum Strobe Pulse Width t

Ø

W

Control Crosstalk, Data-In,
Address or Strobe to Output

Input Capacitance C

NOTE:

3. Peak-to-peak voltage symmetrical about .

IN

V

------------ -

TEST CONDITIONS

f

IS

(kHz)

8, 10 RL = 1kΩ,

CL = 50pF,
tR, tF = 20ns

R

(kΩ)

VIS (V)

L

(Note 3)

V

(V)

DD

MIN TYP MAX UNITSFIGURE

5 - 95 190 ns
10 - 25 50 ns
15 - 15 30 ns

8, 10 RL = 1kΩ,

CL = 50pF,
tR, tF = 20ns

5 - 180 360 ns
10 - 110 220 ns
15 - 35 70 ns

RL = 1kΩ,
CL = 50pF,
tR, tF = 20ns

5 0.6 1.2 - MHz
10 1.6 3.2 - MHz
15 2.5 5 - MHz

8 5 - 300 600 ns

10 - 120 240 ns
15 - 90 180 ns

6 Square Wave Input;

10 - 75 - mV

tR, tF = 20ns

-1010
Any Control Input - - 5 7.5 pF

DD

2

PEAK

4-187

Schematic Diagram

16

V

DD

(NOTE)

6

(NOTE)

5

(NOTE)

3

(NOTE)

4

A

B

C

D

A

A

B

B

C

C

D

D

CD22100

(NOTE)

STROBE

72

A
B
C

D

ENABLES DATA

TO OTHER DECODER
GATES/LATCHES

DETAIL OF LATCHES

ø

p

DQ

n

ø

LEVEL TRIGGERED

(NOTE)

DATA IN

(1 OF 16)

ø = 1

DQ

ø
ø

LATCH

0
1

2
3

4
5
6
7

8

9
10
11

ø

p
n

12
13
14
15

ø

TG TG TG TG

TG TG TG TG

TG TG TG TG

TG TG TG TG

9 1 12 13

15

Y1

14

Y2

10

Y3

11

Y4

X4X3X2X1

8

V

SS

NOTE: INPUTS PROTECTED

BY COS/MOS
PROTECTION
NETWORK

0000X1Y1 0001X1Y3
1000X2Y1 1001X2Y3
0100X3Y1 0101X3Y3
1100X4Y1 1101X4Y3
0010X1Y2 0011X1Y4
1010X2Y2 1011X2Y4
0110X3Y2 0111X3Y4
1110X4Y2 1111X4Y4

V

ADDRESS

DD

DETAIL OF TRANSMISSION GATES

V

DD

Q

V

SS

V

SS

V

IN

DD

OUT

TRUTH TABLE

ADDRESS

SELECT

SELECTABCD ABCD

4-188

Metallization Mask Layout

CD22100

Dimensions in parenthesis are in millimeters and are derived
from the basic inch dimensions as indicated. Grid graduations
are in mils (10-3 inch).

Test Circuits and Waveforms

V

DD

I

V

DD

V

SS

V

SS

1
2
3
4
5
6
7
8

DD

16
15
14
13
12
11
10

9

FIGURE 1. QUIESCENT CURRENT TEST CIRCUIT FIGURE 2. INPUT CURRENT TEST CIRCUIT

1
2
3
4
5
6
7
8

V

SS

V

DD

I

I

V

SS

V

SS

V

DD

16
15
14
13
12
11
10

9

1
2
3
4
5
6
7
8

V

DD

I

DD

16
15
14
13
12
11
10

9

V

DD

NOTE:
MEASURE INPUTS
SEQUENTIALLY TO
BOTH V

CONNECT ALL UNUSED
INPUTS TO EITHER
V

DD

OR V

DD

SS

AND V

SS

FIGURE 3. OFF SWITCH INPUT OR OUTPUT LEAKAGE CURRENT TEST CIRCUIT

4-189

CD22100

Test Circuits and Waveforms

500µF

1
2
3
4
5
6
7
8

V

SS

CLK

CD4029
CLK

Q3
Q4
Q2
Q1

I

D

16
15
14
13
12
11
10

9

(Continued)

V

DD

S

C

L

NOTE:
CLOSE SWITCH S AFTER APPLYING V

DD

FIGURE 4. DYNAMIC POWER DISSIPATION TEST CIRCUIT AND TYPICAL DYNAMIC POWER

DISSIPATION AS A FUNCTION OF SWITCHING FREQUENCY

ON

V

IS

SW

10kΩ

50pF

V

OS

SW = ANY CROSSPOINT
STROBE = DATA - IN = V

V

IS

V

OS

DD

V

DD

50% 50%

0

t

PLH

V

DD

0

t

PLH

50%50%

FIGURE 5. PROPAGATION DELAY TIME TEST CIRCUIT AND

WA VEFORMS (SIGNAL INPUT T O SIGNALOUTPUT,
SWITCH ON)

ON

V

IS

1kΩ

SW = ANY CROSSPOINT

SW

1kΩ

OFF

SW

V

1kΩ

FIGURE 7. TEST CIRCUIT AND TYPICAL CROSSTALK BETWEEN SWITCH CIRCUITS IN

THE SAME PACKAGE AS A FUNCTON OF SIGNAL FREQUENCY

0.1µF

C

L

OS

5

10

TA = 25oC

4

10

VDD = 15V

10V

10V

C

L

C

L

3

10

2

10

5V

CL = 50pF

POWER DISSIPATION PER PACKAGE (µW)

10

2

10

3

10

4

10

5

10

CL = 15pF

6

10

SWITCHING FREQUENCY (Hz)

CONTROLS

V

IS

SW

1kΩ

10kΩ

V

OS

SW = ANY CROSSPOINT

V

CONTROL

DD

0

50mV

V

OS

0

-50mV

FIGURE 6. TEST CIRCUIT AND WAVEFORMS FOR

CROSSTALK (CONTROL INPUT TO SIGNAL
OUTPUT)

0

TA = 25oC

= 10V

V

DD

V

OS

dB=

V

-----------

20 log

CROSSTALK

-20

-40

IS

-60

-80

-100

-120

= 10V

P-P

3

10

SINE WAVE

4

10

5

10

6

10

V

IS

C

= 50pF

L

R

= 1kΩ

L

2

10

INPUT SIGNAL FREQUENCY (Hz)

4-190

CD22100

Test Circuits and Waveforms

DATA-IN

STROBE

V

DD

V

IS

SW = ANY CROSSPOINT

DATA-IN

V

DD

V

IS

SW

SW = ANY CROSSPOINT
STROBE = V

DD

SW

FIGURE 8. PROPAGATION DELAY TIME TEST CIRCUIT AND WAVEFORMS

(STROBE TO SIGNAL OUTPUT, SWITCH TURN-ON OR TURN-OFF)

V

OS

50pF1kΩ

FIGURE 9. PROPAGATION DELAY TIME TEST CIRCUIT AND WAVEFORMS

(DATA-IN TO SIGNAL OUTPUT, SWITCH TURN-ON TO HIGH OR LOW LEVEL)

V

DATA-IN

(Continued)

OS

50pF1kΩ

V

DD

0

V

DD

V

OS

0

STROBE

DATA-IN

V

OS

50%

10%

t

PZH

t

V

DD

0

V

DD

W

50%

50% 50% 50%

t

S

t

H

t

W

t

S

t

H

0

t

PZH

V

DD

0

V

IS

SW

t

PHZ

V

90%

DD

1kΩ

V

OS

50pF

DATA-IN

V

OS

10%

V

DD

50%

0

V

DD

90%

t

PZH

0

ADDRESS = 0

V

DD

V

IS

SW

1kΩ

SW = ANY CROSSPOINT
STROBE = V

DD

V

DD

50%

0

t

S

t

V

DD

H

0

V

DD

V

1

OS

0

V

DD

2

V

OS

0

VOS1

50pF

V

V

IS

ADDRESS = 1

DD

SW

1kΩ

ADDRESS

DATA-IN

VOS2

50pF

FIGURE 10. PROPAGATION DELAY TIME TEST CIRCUIT AND WAVEFORMS

(ADDRESS TO SIGNAL OUTPUT, SWITCH TURN-ON OR TURN-OFF)

4-191

50%

t

PHZ

90%

50%

10%

t

PZH

Typical Performance Curves

CD22100

VDD = 2.5V, VSS = -2.5V

300

250

TA = 125oC

200

150

100

SWITCH “ON” RESISTANCE (Ω)

25oC

-55oC

50

0

-4 -3 -2 -1 0 1 2 3 4
INPUT SIGNAL (V)

FIGURE 11. TYPICAL ON RESISTANCE AS A FUNCTION OF

INPUT SIGNAL VOLTAGE AT VDD = -VSS = 2.5V

VDD = 7.5V, VSS = -7.5V

150

125

100

TA = 125oC

75

50

25oC

-55oC

25

SWITCH “ON” RESISTANCE (Ω)

0

-10 -7.5 -5 -2.5 0 2.5 5 7.5 10
INPUT SIGNAL (V)

FIGURE 13. TYPICAL ON RESISTANCE AS A FUNCTION OF

INPUT SIGNAL VOLTAGE AT VDD = -VSS = 7.5V

VDD = 5V, VSS = -5V

150

125

TA = 125oC

100

75

50

25oC

-55oC

SWITCH “ON” RESISTANCE (Ω)

25

0

-10 -7.5 -5 -2.5 0 2.5 5 7.5 10
INPUT SIGNAL (V)

FIGURE 12. TYPICAL ON RESISTANCE AS A FUNCTION OF

INPUT SIGNAL VOLTAGE AT VDD = -VSS = 5V

TA = 25oC

300

250

VDD = 2.5V, VSS = -2.5V

200

150

100

±5V

50

SWITCH “ON” RESISTANCE (Ω)

0

±7.5V

-10 -7.5 -5 -2.5 0 2.5 5 7.5 10
INPUT SIGNAL (V)

FIGURE 14. TYPICAL ON RESISTANCE AS A FUNCTION OF

INPUT SIGNAL VOLTAGE AT TA = 25oC

VDD = 10V
T

= 25oC

A

10

R

= 1MΩ, 100kΩ, 10kΩ

L

8

6

500Ω

1kΩ

STROBE = V

DATA-IN =
V

DD

4

OUTPUT VOLTAGE (V)

2

V

IS

0246810

INPUT VOLTAGE (V)

FIGURE 15 . TYPICAL SWITCH ON TRANSFER

CHARACTERISTICS (1 OF 16 SWITCHES)

SW

DD

TA = 25oC, VDD = 5V, VSS = -5V

= 5V

2.5

2

V

IS

C

L

V

DATA-IN

RL = 1MΩ

P-P

= 15pF

= 5V

= SINE WAVE 1.77V

V

IS

10kΩ

f

IS

C

RMS

= 0.4pF

IOS

SW

VOS (RMS)

) RMS (V)

OS

1.5

V

OS

R

L

V

SS

1

0.5

OUTPUT SIGNAL (V

0

5

10

1kΩ

RF VOLTMETER
BOONTON RADIO
MODEL 91-CA
OR EQUIVALENT

6

10

7

10

R

C

L

L

8

10

INPUT SIGNAL FREQUENCY (Hz)

FIGURE 16. TYPICAL SWITCH ON FREQUENCY RESPONSE

CHARACTERISTICS

4-192