Page 1
STP9NK60Z - STP9NK60ZFP
STB9NK60Z - STB9NK60Z-1
N-CHANNEL 600V - 0.85Ω - 7A TO-220/FP/D2PAK/I2PAK
Zener-Protected SuperMESH™Power MOSFET
TYPE V
STP9NK60Z
STP9NK60ZFP
STB9NK60Z
STB9NK60Z-1
600 V
600 V
600 V
600 V
DSS
R
DS(on)
< 0.95
< 0.95 Ω
< 0.95 Ω
< 0.95 Ω
I
Ω
7 A
7 A
7 A
7 A
Pw
D
125 W
30 W
125 W
125 W
■ TYPICAL RDS(on) = 0.85 Ω
■ EXTREMELY HIGH dv /d t C APABILITY
■ IMPROVED ESD CAPABILITY
■ 100% AVALANCHE RATED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC C APACITANCES
■ VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST ’s well established stripbased PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the
most demanding applications. Such series c om pl ements ST full range of high voltage MOSFE Ts including revolutionary MDmesh™ products.
TO-220 TO-220FP
3
I2PAK
3
2
1
D
2
PAK
1
INTERNAL SCHEMATIC DIAGRAM
3
2
1
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUP PLIE S,
ADAPTORS AND PFC
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP9NK60Z P9NK60Z TO-220 TUBE
STP9NK60ZFP P9NK60ZFP TO-220FP TUBE
STB9NK60Z B9NK60Z
STB9NK60ZT4 B9NK60Z
STB9NK60Z-1 B9NK60Z-1
2
PAK
D
2
D
PAK
2
I
PAK
TUBE
TAPE & REEL
TUBE
1/13June 2002
Page 2
STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
TO-220 /
2
PAK / I2PAK
D
V
I
V
V
DM
P
DS
DGR
GS
I
D
I
D
TOT
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
600 V
600 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
(l)
Drain Current (pulsed) 28 28 (*) A
Total Dissipation at TC = 25°C
7 7 (*) A
4.4 4.4 (*) A
125 30 W
Derating Factor 1 0.24 W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4000 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
V
ISO
T
j
T
stg
(l) Pulse wi dth limited by safe operating area
≤7A, di/dt ≤200 µA, VDD ≤ V
(1) I
SD
(*) Limited only by maximum temperature allowed
Insulation Withstand Voltage (DC) - 2500 V
Operating Junction Temperature
Storage Temperature
, Tj ≤ T
(BR)DSS
JMAX.
-55 to 150
-55 to 150
TO-220FP
°C
°C
THERMA L D ATA
TO-220
2
PAK
I
2
PAK
D
Rthj-case Thermal Resistance Junction-case Max 1 4.16 °C/W
Rthj-pcb
Thermal Resistance Junction-pcb Max
(When mounted on minimum Footprint)
30 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300 °C
TO-
220FP
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
E
AS
Single Pulse Avalanche Energy
(starting T
max)
j
= 25 °C, ID = IAR, VDD = 50 V)
j
7A
235 mJ
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 30 V
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
2/13
Page 3
STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
I
V
R
DSS
GSS
GS(th)
DS(on)
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS = 15 V, ID= 3.5 A 5.3 S
g
fs
C
oss eq.
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(3) Equivalent Output
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ID = 1 mA, VGS = 0 600 V
V
= Max Rating
DS
VDS = Max Rating, TC = 125 °C
V
= ± 20V ±10 µA
GS
V
= VGS, ID = 100µA
DS
3 3.75 4.5 V
1
50
VGS = 10V, ID = 3.5 A 0.85 0.95
= 25V, f = 1 MHz, VGS = 0 1110
V
DS
135
30
VGS = 0V, VDS = 0V to 480 V 72 pF
VDD = 300 V, ID = 3.5 A
RG= 4.7Ω VGS = 10 V
19
17
(Resistive Load see, Figure 3)
= 480 V, ID = 7 A,
V
DD
VGS = 10V
38
7
53
21
µA
µA
Ω
pF
pF
pF
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
t
f
Fall Time
VDD = 300 V, ID = 3.5 A
RG=4.7Ω VGS = 10 V
43
15
(Resistive Load see, Figure 3)
= 300 V, ID = 7 A,
t
r(Voff)
t
t
Off-voltage Rise Time
f
c
Fall Time
Cross-over Time
V
DD
R
=4.7Ω, V
G
GS
= 10V
(Inductive Load see, Figure 5)
11
8
20
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pu l sed: Pulse duration = 300 µs, duty cyc l e 1. 5 %.
2. Pul se width limi te d by safe oper at i ng area.
3. C
Source-drain Current
(2)
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
.
V
DSS
ISD = 7 A, VGS = 0
I
SD
VDD = 30V, Tj = 150°C
(see test circuit, Figure 5)
= 7 A, di/dt = 100A/µs
480
3.5
14.5
when VDS increase s fr om 0 to 80%
oss
7
28
1.6 V
ns
ns
ns
ns
ns
A
A
ns
µC
A
3/13
Page 4
STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1
Safe Operating Area For TO-220FPSafe Operating Area For TO-220/D2PAK/I2PAK
Thermal Impedance For TO-220/D2PAK/I2PAK
Output Characteristics
Thermal Impedance For TO-220FP
Transfer Characteristics
4/13
Page 5
STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1
Static Drain-source On ResistanceTransconductanc e
Capacitance VariationsGate Charge vs Gate-source Voltage
Normalized Gate Threshold Volta ge vs Temp.
Normalized On Resistance vs Temperatur e
5/13
Page 6
STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1
Normalized BVDSS vs TemperatureSource-drain Diode Forward Characteristics
Maximum Avalanche Energy vs Temperature
6/13
Page 7
STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
7/13
Page 8
STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1
E
TO-220 MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
A
C
D
8/13
L5
Dia.
L7
D1
L6
L2
L9
F1
G1
F
H2
G
F2
L4
P011C
Page 9
STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1
TO-220FP MECHANICAL DATA
DIM.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
E
A
D
B
L3
L6
L7
¯
F1
F
G1
H
G
F2
123
L2
L5
L4
9/13
Page 10
STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1
2
D
PAK MECHANICAL DATA
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
mm. inch
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2 0º8º
3
10/13
1
Page 11
STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1
TO-262 (I2PAK) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
e 2.4 2.7 0.094 0.106
E 10 10.4 0.393 0.409
L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055
mm inch
C
A
A1
C2
B2
B
e
E
L1
L2
D
L
P011P5/E
11/13
Page 12
STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
* on sales type
12/13
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BULK QTY
1000 1000
Page 13
STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of su ch in formation nor for any in fringement of patents or other rights of third parties w hich may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously suppli ed. STMi croelect ronics pr oducts are not author ized for use as cr itical component s in li fe suppo rt devi ces or
systems without express written approval of STMicroelectronics.
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© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
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STMicroelectronics GROUP OF COMPANIES
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13/13
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