Datasheet CA3018A, CA3018 Datasheet (Harris Semiconductor)

SEMICONDUCTOR

CA3018

March 1993

Features

• Matched Monolithic General Purpose Transistors

Matched . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±10%

•h

FE

Matched

•V

BE

- CA3018A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±2mV

- CA3018. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV

• Operation From DC to 120MHz

• Wide Operating Current Range

• CA3018A Performance Characteristics Controlled

from 10µA to 10mA

• Low Noise Figure. . . . . . . . . . . . .3.2dB Typical at 1kHz

• Full Military Temperature Range . . . . -55

o

C to +125oC

Applications

• Two Isolated Transistors and a Darlington Connected
Transistor Pair for Low Power Applications at
Frequencies from DC through the VHF Range

• Custom Designed Differential Amplifiers

• Temperature Compensated Amplifiers

• See Application Note, AN5296 “Application of the
CA3018 Integrated Circuit Transistor Array” for
Suggested Applications

General Purpose Transistor Arrays

Description

The CA3018 and CA3018A consist of four general purpose
silicon n-p-n transistors on a common monolithic substrate.

Two of the four transistors are connected in the Darlington
configuration. The substrate is connected to a separate
terminal for maximum flexibility.

The transistors of the CA3018 and the CA3018A are well
suited to a wide variety of applications in low power systems
in the DC through VHF range. They may be used as discrete
transistors in conventional circuits but in addition they
provide the advantages of close electrical and thermal
matching inherent in integrated circuit construction.

The CA3018A is similar to the CA3018 but features tighter
control of current gain, leakage, and offset parameters
making it suitable for more critical applications requiring
premium performance.

Ordering Information

PART

NUMBER

CA3018 -55oC to +125oC 12 Pin CAN

CA3018A -55oC to +125oC 12 Pin CAN

TEMPERATURE

RANGE PACKAGE

Pinout

CA3018, CA3018A

(TO-5 CAN)

TOP VIEW

12

Q4

6-5

11

SUBSTRATE

10

9

Q3

Q1

8

7

6

1

2

3

4

Q2

5

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright

© Harris Corporation 1993

File Number 338.2

Specifications CA3018, CA3018A

Absolute Maximum Ratings (T

Collector-to-Emitter Voltage, V
Collector-to-Base Voltage, V
Collector-to-Substrate Voltage, V
Emitter-to-Base Voltage, V

CEO

CBO

. . . . . . . . . . . . . .5V 5V

EBO

= +25oC) Operating Conditions

A

CA3018 CA3018A

. . . . . . . . . . .15V 15V

Operating Temperature Range . . . . . . . . . . . . -55oC ≤ TA≤ +125oC

Storage Temperature Range. . . . . . . . . . . . . . -65oC ≤ TA≤ +150oC

. . . . . . . . . . . .20V 30V

(Note 1) . . 20V 40V

CIO

Collector Current, IC. . . . . . . . . . . . . . . . . . . . . .50mA 50mA

Power Dissipation

Any One Transistor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW

Total Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450mW

TA > +85oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .Derate at 5mW/oC

Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

Lead Temperature (Soldering 10 Sec.). . . . . . . . . . . . . . . . . +300oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Electrical Specifications T

= +25oC

A

LIMITS

CA3018 CA3018A

PARAMETERS SYMBOL TEST CONDITIONS

MIN TYP MAX MIN TYP MAX

UNITS

STATIC CHARACTERISTICS
Collector Cutoff Current

I

CBO

VCB = 10V, IE = 0 - 0.002 100 - 0.002 40 nA

(Figure 1)
Collector Cutoff Current

(Figure 2)
Collector Cutoff Current

I

CEO

I

CEOD

VCE = 10V, IB = 0 - See

Fig. 2

5 - See

Fig. 2

0.5 µA

VCE = 10V, IB = 0 -----5µA

Darlington Pair
Collector-to-Emitter

V

(BR)CEO

IC = 1mA, IB = 0 15 24 - 15 24 - V

Breakdown Voltage
Collector-to-Base Breakdown

V

(BR)CBO

IC = 10µA, IE = 0 20 60 - 30 60 - V

Voltage
Emitter-to-Base Breakdown

V

(BR)EBO

IE = 10µA, IC = 0 5 7 - 5 7 - V

Voltage
Collector-to-Substrate

V

(BR)CIO

IC = 10µA, ICI = 0 20 60 - 40 60 - V

Breakdown Voltage
Collector-to-Emitter

V

CES

IB = 1mA, IC = 10mA - 0.23 - - 0.23 0.5 V

Saturation Voltage
Static Forward Current

Transfer Ratio (Note 2)
(Figure 3)

h

FE

VCE = 3V IC = 10mA - 100 - 50 100 - -

IC = 1mA 30 100 200 60 100 200 ­IC = 10µA - 54 - 30 54 - -

Magnitude of Static-Beta
Ratio (Isolated Transistors Q

1

VCE = 3V,
IC1 = IC2 = 1mA

0.9 0.97 - 0.9 0.97 - -

and Q2) (Figure 3)
Static Forward Current

Transfer Ratio Darlington Pair
(Q3 and Q4) (Figure 4)

Base-to-Emitter Voltage
(Figure 5)

Input Offset Voltage
(Figures 5, 7)

h

V
V−

FED

V

BE1
BE2

BE

VCE = 3V IC = 1mA 1500 5400 - 2000 5400 - -

IC = 100µA - - - 1000 2800 - -

VCE = 3V IE = 1mA - 0.715 - 0.600 0.715 0.800 V

IE = 10mA - 0.800 - - 0.800 0.900 V

VCE = 3V, IE = 1mA - 0.48 5 - 0.48 2 mV

6-6

Specifications CA3018, CA3018A

Electrical Specifications T

= +25oC (Continued)

A

LIMITS

CA3018 CA3018A

PARAMETERS SYMBOL TEST CONDITIONS

Temperature Coefficient:
Base-to-Emitter Voltage Q1,
Q2 (Figure 6)

Base (Q3)-to-Emitter (Q4)

∆V

BE

∆T

V

(V

BED

9-1

VCE = 3V, IE = 1mA - -1.9 - - -1.9 - mV/oC

)VCE = 3V IE = 10mA - 1.46 - - 1.46 1.60 V
Voltage Darlington Pair
(Figure 8)

Temperature Coefficient:
Base-to-Emitter Voltage
Darlington Pair (Q3 and Q4)

∆V

BED

∆T

VCE = 3V, IE = 1mA - 4.4 - - 4.4 - mV/oC

MIN TYP MAX MIN TYP MAX

IE = 1mA - 1.32 - 1.10 1.32 1.50 V

UNITS

(Figure 9)
Temperature Coefficient:

Magnitude of Input Offset
Voltage

V

−

BE1VBE2

∆T

VCC = 6V, VEE = -6V,
IC1 = IC2 = 1mA

-10- -10-µV/oC

DYNAMIC CHARACTERISTICS
Low Frequency Noise Figure

(Figures 10 - 12)

NF f = 1kHz, VCE = 3V,

IC = 100µA, Source

- 3.25 - - 3.25 - dB

Resistance = 1kΩ

Low Frequency, Small Signal
Equivalent Circuit Characteristics

Forward Current Transfer
Ratio (Figure 13)

Short Circuit Input
Impedance (Figure 13)

Open Circuit Output
Impedance (Figure 13)

Open Circuit Reverse
Voltage Transfer Ratio

h

FE

h

IE

h

OE

h

RE

f = 1kHz, VCE = 3V,
IC = 1mA

f = 1kHz, VCE = 3V,
IC = 1mA

f = 1kHz, VCE = 3V,
IC = 1mA

f = 1kHz, VCE = 3V,
IC = 1mA

- 110 - - 110 - -

- 3.5 - - 3.5 - kΩ

- 15.6 - - 15.6 - µmho

- 1.8 x
10

- - 1.8 x

-4

10

--

-4

(Figure 13)

Admittance Characteristics

Forward Transfer
Admittance (Figure 14)

Input Admittance
(Figure 15)

Output Admittance
(Figure 16)

Reverse Transfer
Admittance (Figure 17)

Gain Bandwidth Product

Y

FE

Y

IE

Y

OE

Y

RE

f

T

f = 1MHz, VCE = 3V,
IC = 1mA

f = 1MHz, VCE = 3V,
IC = 1mA

f = 1MHz, VCE = 3V,
IC = 1mA

f = 1MHz, VCE = 3V,

- 31 ­j1.5

- 0.3 +

j0.04

- 0.001

+ j0.03

- - 31 -

- mmho

j1.5

- - 0.3 +

- mmho

j0.04

- - 0.001

- mmho

+ j0.03

See Figure 17 mmho

IC = 1mA
VCE = 3V, IC = 3mA 300 500 - 300 500 - MHz

(Figure 18)
Emitter-to-Base Capacitance C
Collector-to-Base Capacitance C
Collector-to-Substrate

EB

CB

C

CI

VEB = 3V, IE = 0 - 0.6 - - 0.6 - pF
VCB = 3V, IC = 0 - 0.58 - - 0.58 - pF
VCI = 3V, IC = 0 - 2.8 - - 2.8 - pF

Capacitance

NOTE:

1. The collector of each transistor of the CA3018 and CA3018A is isolated from the substrate by an integral diode. The substrate (Terminal

10) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal
transistor action.

2. Actual forcing current is via the emitter for this test.

6-7

Typical Performance Curves

2

10

IE = 0

10

VCB= 15V

V

= 10V

1

-1

10

CB

V

= 5V

CB

CA3018, CA3018A

3

10

2

10

10

1

IB = 0

VCE = 10V

VCE = 5V

-2

10

-3

10

COLLECTOR CUTOFF CURRENT (nA)

-4

10

0 25 50 75 100 125

AMBIENT TEMPERATURE (

o

C)

FIGURE 1. TYPICAL COLLECT OR-TO-BASE CUTOFF CURRENT

vs TEMPERATURE

120

VCE = 3V
T

= +25oC

A

110

)

FE

100

90

80

70

TRANSFER RATIO (h

STATIC FORWARD CURRENT

60

50

0.01

h

FE

h

h

FE1

FE2

OR

h

h

FE2

FE1

0.1 1 10

EMITTER CURRENT (mA)

1.1

1

0.9

0.8

FIGURE 3. TYPICAL ST A TIC FORW ARD CURRENT TRANSFER

RATIO AND BETA RATIO FOR TRANSISTORS Q
AND Q2 vs EMITTER CURRENT

-1

10

-2

10

COLLECTOR CUTOFF CURRENT (nA)

-3

10

0 25 50 75 100 125

AMBIENT TEMPERATURE (

o

C)

FIGURE 2. TYPICAL COLLECTOR-TO-EMITTER CUTOFF

CURRENT vs TEMPERATURE

)

FED

8000

VCE = 3V
TA = +25oC

7000

6000

5000

4000

BETA RATIO

3000

2000

STATIC FORWARD CURRENT

1000

0

0.1 1 10

TRANSFER RATIO FOR DARLINGTON PAIR (h

EMITTER CURRENT (mA)

FIGURE4. TYPICAL STA TIC FORWARD CURRENT - TRANSFER

1

RATIO FOR DARLINGTON CONNECTED
TRANSISTORS Q3 AND Q4 vs EMITTER CURRENT

0.8
VCE = 3V

T

= +25oC

A

0.7

V

BE

0.6

0.5

BASE-TO-EMITTER VOLTAGE (V)

0.4

VIO = |V

0.01 0.1 1.0 10

BE1

- V

BE2

|

4

3

2

1

0

EMITTER CURRENT (mA)

FIGURE 5. TYPICAL STATIC BASE-TO-EMITTER VOLTAGE

CHARACTERISTIC AND INPUT OFFSET VOLTAGE
FOR Q1 AND Q2 vs EMITTER CURRENT

VCE= 3V

1.0

0.9

0.8

0.7
IE= 3mA

0.6

0.5

BASE-TO-EMITTER VOLTAGE (V)

INPUT OFFSET VOLTAGE Q1 AND Q2 (mV)

0.4

I

E

= 1mA

I

E

= 0.5mA

-75 -50 -25 0 25 50 75 100 125
AMBIENT TEMPERATURE (

FIGURE 6. TYPICAL BASE-TO-EMITTER VOLTAGE

CHARACTERISTIC FOR EACH TRANSISTOR vs
TEMPERATURE

6-8

o

C)

CA3018, CA3018A

Typical Performance Curves

5

VCE = 3V

4

3

2

0.75

0.50

OFFSET VOLTAGE (mV)

0.25

0

-75 -50 -25 0 25 50 75 100 125
AMBIENT TEMPERATURE (

(Continued)

IE= 10mA

IE= 1mA

IE= 0.1mA

o

C)

FIGURE7. TYPICAL OFFSET VOLTAGE CHARACTERISTIC vs

TEMPERATURE

2

VCE = 3V

1.75

IE= 3mA

1.7
VCE = 3V

= +25oC

T

A

1.6

1.5

1.4

FOR DARLINGTON PAIR (V)

1.3

BASE-TO-EMITTER VOLTAGE

1.2

0.1 1 10
EMITTER CURRENT (mA)

FIGURE8. TYPICAL STATIC INPUT VOLT AGE CHARACTERISTIC

FOR DARLINGTON PAIR (Q3 AND Q4) vs EMITTER
CURRENT

VCE = 3V

= 500Ω

R

S

TA = +25oC

20

IE= 1mA

IE= 0.5mA

o

C)

BASE-TO-EMITTER VOLTAGE

1.50

1.25

FOR DARLINGTON PAIR (V)

0.75

1

-75

-50 -25 0
AMBIENT TEMPERATURE (

25 50 75 100 125

FIGURE9. TYPICAL STATIC INPUT VOLT AGE CHARACTERISTIC

FOR DARLINGTON P AIR (Q3 AND Q4) vs
TEMPERATURE

VCE = 3V
RS = 1000Ω

= +25oC

T

A

20

15

10

NOISE FIGURE (dB)

5

f = 0.1kHz

f = 1kHz

f = 10kHz

15

10

NOISE FIGURE (dB)

5

0

0.01 0.1 1

f = 0.1kHz

f = 1kHz

f = 10kHz

COLLECTOR CURRENT (mA)

FIGURE10. NOISE FIGURE vs COLLECTOR CURRENT , RS = 500Ω

30

VCE = 3V
RS = 10000Ω
T

= +25oC

25

A

20

15

10

NOISE FIGURE (dB)

f = 0.1kHz

f = 1kHz

f = 10kHz

5

0

0.01 0.1 1
COLLECTOR CURRENT (mA)

0

0.01 0.1 1
COLLECTOR CURRENT (mA)

FIGURE11. NOISE FIGURE vs COLLECTOR CURRENT , RS = 1kΩ FIGURE 12. NOISE FIGURE vs COLLECTOR CURRENT, RS = 10kΩ

6-9

CA3018, CA3018A

Typical Performance Curves

100

VCE = 3V
f = 1kHz

= +25oC

T

A

h

10

IE

h

RE

hFE = 110
hIE = 3.5kΩ
hRE = 1.88 x 10
hOE = 15.6µmho

(Continued)

AT

-4

1mA

)

FE

h

OE

COMMON EMITTER CIRCUIT, BASE INPUT
TA = +25oC, VCE = 3V, IC = 1mA

40

30

) (mmhos)

FE

20

g

FE

10

h

1.0

NORMALIZED h PARAMETERS

0.1

0.01 0.1 1.0 10
COLLECTOR CURRENT (mA)

FE

0

h

RE

h

IE

-10

OR SUSCEPTANCE (b

FORWARD TRANSFER CONDUCTANCE (g

-20

0.1 10 100

b

FE

1

FREQUENCY (MHz)

FIGURE 13. h PARAMETERS vs COLLECTOR CURRENT FIGURE 14. FORWARD TRANSFER ADMITTANCE (YFE)

COMMON EMITTER CIRCUIT, BASE INPUT

6

TA = +25oC, VCE = 3V, IC = 1mA

OE

5

) (mmhos)

4

OE

3

2

)

IE

) (mmhos)

IE

6

COMMON EMITTER CIRCUIT, BASE INPUT
TA = +25oC, VCE = 3V, IC = 1mA

5

4

3

2

)

b

IE

b

OE

INPUT CONDUCTANCE (g

1

OR SUSCEPTANCE (b

0

0.1 10 100

g

IE

1

FREQUENCY (MHz)

OUTPUT CONDUCTANCE (g

1

OR SUSCEPTANCE (b

0

0.1 10 1001
FREQUENCY (MHz)

FIGURE 15. INPUT ADMITTANCE (YIE) FIGURE 16. OUTPUT ADMITTANCE (YOE)

)

RE

REVERSE TRANSFER CONDUCTANCE (g

COMMON EMITTER CIRCUIT, BASE INPUT
TA = +25oC, VCE = 3V, IC = 1mA

gREIS SMALL AT FREQUENCIES

) (mmhos)

0

RE

LESS THAN 500MHz

-0.5

-1.0

-1.5

OR SUSCEPTANCE (b

-2.0
1 10010

FREQUENCY (MHz)

VCE = 3V

= +25oC

T

A

1000

900
800

b

RE

700
600
500
400
300
200

GAIN BANDWIDTH PRODUCT (MHz)

100

01234567891011121314

COLLECTOR CURRENT (mA)

FIGURE 17. REVERSE TRANSFER ADMITTANCE (YRE) FIGURE 18. TYPICAL GAIN BANDWIDTH PRODUCT (fT) vs

COLLECTOR CURRENT

g

OE

6-10