Page 1
FEATURES
Low noise
Excellent h
Complementary to A733T
Elektronische Bauelemente
A suffix of "-C" specifies halogen & lead-free
linearity
FE
RoHS Compliant Product
C945T
NPN Silicon
Plastic-Encapsulate Transistor
TO-92
MAXIMUM RATINGS (T
Collector-Base Voltage
Collector-Emitter V oltage
Emitter-Base Volt age
Collector Current Continuous
Collector Power Dissipation
Junction, Storage Temperature
Parameter Symbol Value Units
= 25 °C unless otherwise noted)
A
V
CBO
V
CEO
V
EBO
I
C
P
C
, T
T
J
STG
60 V
50 V
5 V
150 mA
400 mW
125, -55~125 °C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown V olt age
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Power Dissipation
Transition Frequency
Noise Figure
Parameter Symbol Test Conditions Min Typ Max Units
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
C
f
NF
ob
T
IC = 1mA, IE = 0
IC = 100μA, IB = 0
IE = 100mA, IC = 0
VCB = 60V, IE = 0
VCE = 45V
VEB = 5V, IC = 0
VCE = 6V, IC = 1mA
VCE = 6V, IC = 0.1mA
IC = 100mA, IB = 10mA
IC = 100mA, IB = 10mA
VCB = 10V, IE = 0, f = 1MHz
VCE=6V, IC=10mA, f=30MHz
VCE=6V, IC=0.1mA,
=10 KΩ, f=kMHz
R
G
60 V
50 V
5 V
70 700
40
200 MHz
1
2
3
1. EMITTER
2.
COLLECTOR
BASS
3.
0.1
0.1
0.1
1 2
3
μA
μA
μA
0.3 V
1 V
3.0 pF
10 dB
CLASSIFICATION OF hFE
Rank
Range
01-Jun-2005 Rev. B Page 1 of 2
O Y GR BL
70-140 120-240 200-400 350-700
Any changing of specification will not be informed
individual
Page 2
Elektronische Bauelemente
C945T
NPN Silicon
Plastic-Encapsulate Transistor
TYPICAL
CHARACTERISTICS
http://www.SeCoSGmbH.com
01-Jun-2005 Rev. B Page 2 of 2
Any changing of specification will not be informed individual
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