Page 1
桂林斯壯微電子有限責任公司
CHARACTERISTIC
特性參數
Symbol符號Rating
額定值
Unit
單位
Collector-Base V oltage
集電極 - 基極電壓
V
CBO
60
Vdc
Collector-Emitter V oltage
集電極 - 發射極電壓
V
CEO
50
Vdc
Emitter-Base V oltage
發射極 - 基極電壓
V
EBO
5.0
Vdc
Collector Current-Continuous
集電極電流 - 連續
Ic
1 0 0
mA
Collector Power Dissipation
集電極耗散功率
PC225
mW
Junction Temperature
結溫
Tj150℃Storage Temperature Range
儲存溫度
T
stg
-55 〜 150
℃
GMC945(C945LT1)=CR
GMC945(C945LT1)=CR
GMC945(C945LT1)=CR
HHH
FEFEFE
:120-220
:120-220
:120-220
200-400
200-400
200-400
GM C945
MAXIMUM
■ MAXIMUM
MAXIMUM
Guilin
Guilin
Guilin
RATINGS
RATINGS
RATINGS
Strong
Strong
Strong
=25
(T(T(T
=25
=25
aaa
℃ )
)
)
最大額定值
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Micro-Electronics
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DEVICE
■ DEVICE
DEVICE
MARKING
MARKING
MARKING
打標
Page 2
桂林斯壯微電子有限責任公司
Characteristic
特性參數
Symbol符號Test Condition
測試條件
Min
最小值
Typ典型值
Max
最大值
Unit
單位
Collector Cutoff Current
集電極截止電流
I
CBO
V
CB
=60V ,
IE=0
——0.1
μ A
Emitter Cutoff Current
發射極截止電流
I
EBO
V
EB
=5V,
IC=0
——0.1
μ A
Collector-Base Breakdown V oltage
集電極 - 基極擊穿電壓
V
(BR)CBOIC
=100 μ A
60
—
—
V
Collector-Emitter Breakdown V oltage
集電極 - 發射極擊穿電壓
V
(BR)CEOIC
=1.0mA
50
—
—
V
Emitter-Base Breakdown V otlage
發射極 - 基極擊穿電壓
V
(BR)EBOIE
=100 μ A
5
—
—
V
DC Current Gain
直流電流增益
H
FE
V
CE
=6V,
IC= 1 mA
12 0—4 00
—
Collector-Emitter Saturation V oltage
集電極 - 發射極飽和壓降
V
CE(sat)
IC=100mA,
IB=10mA
——0. 3VBase-Emitter Saturation
基極 - 發射極電壓
VBEV
CE
=5.0V ,
IC=10mA
——0.8VTransition Frequency
特徵頻率
fTV
CE
= 6
.0V,
IC=1mA
—
25 0
—
MHz
GM C945
ELECTRICAL
■ ELECTRICAL
ELECTRICAL
=25
(T(T(T
=25
=25
AAA
unless
℃ unless
unless
Guilin
Guilin
Guilin
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
otherwise
otherwise
otherwise
noted
noted
noted
Strong
Strong
Strong
如無特殊說明 ,,,
Micro-Electronics
Micro-Electronics
Micro-Electronics
電特性
溫度爲 252525
℃ )))
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Page 3
桂林斯壯微電子有限責任公司
GM C945
■ DIMENSION
DIMENSION
DIMENSION
外形封裝尺寸
Guilin
Guilin
Guilin
Strong
Strong
Strong
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Micro-Electronics
Micro-Electronics
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