Datasheet c1815t Datasheet [en, de]

Page 1
r
r
Elektronische Bauelemente
FEATURE
Power Dissipation
CLASSIFICATION OF h
Product-Rank C1815T-O C1815T-Y C1815T-GR
Range 70~140 120~240 200~400
FE (1)
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
C1815T
0.15A , 60V
TO-92
G
K
H
Emitte
J
A
D
B
CE
F
CollectorBase
Millimete
REF.
Min. Max.
A 4.40 4.70 B 4.30 4.70 C 12.70 ­D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 ­J 2.42 2.66 K 0.36 0.76
Base
Collector
Emitter
ABSOLUTE MAXIMUM RATINGS (T
Parameter Symbol Ratings Unit
Collector to Base Voltage V Collector to Emitter Voltage V Emitter to Base Voltage V Collector Current - Continuous IC 150 mA Collector Power Dissipation PC 400 mW Junction, Storage Temperature TJ, T
= 25°C unless otherwise specified)
A
60 V
CBO
50 V
CEO
5 V
EBO
125, -55 ~ 125 °C
STG
ELECTRICAL CHARACTERISTICS (T
Parameter Symbol Min. Typ. Max. Unit Test condition
Collector to Base Breakdown Voltage V Collector to Emitter Breakdown Voltage V Emitter to Base Breakdown Voltage V Collector Cut-Off Current I Collector Cut-Off Current I Emitter Cut-Off Current I DC Current Gain hFE 70 700 VCE=6V, IC=2mA Collector to Emitter Saturation Voltage V Base to Emitter Saturation Voltage V Transition Frequency fT 80 - - MHz VCE=10V, IC=1mA, f=30MHz Collector Output Capacitance Cob - - 3.5 pF VCB=10V, IE=0, f=1MHz
Noise Figure NF - - 10 dB
= 25°C unless otherwise specified)
A
60 - - V IC=100μA, IE=0
(BR)CBO
50 - - V IC=0.1mA, IB=0
(BR)CEO
5 - - V IE=100μA, IC=0
(BR)EBO
- - 0.1 μA VCB=60V, IE=0
CBO
- 0.1 μA VCE=50V, IB=0
CEO
- - 0.1 μA VEB=5V, IC=0
EBO
- - 0.25 V IC=100mA, IB=10mA
CE(sat)
- - 1 V IC=100mA, IB=10mA
BE(sat)
V
=6V, IC=0.1mA, f=1KHz,
CE
R
=10KΩ
G
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
18-Mar-2010 Rev. B Page 1 of 2
Page 2
Elektronische Bauelemente
CHARACTERISTIC CURVES
C1815T
NPN Plastic Encapsulated Transistor
0.15A , 60V
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
18-Mar-2010 Rev. B Page 2 of 2
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