Datasheet C106M1G Specification

C106 Series

Preferred Devices

Sensitive Gate Silicon
Controlled Rectifiers

Reverse Blocking Thyristors

Glassivated PNPN devices designed for high volume consumer
applications such as temperature, light, and speed control; process and
remote control, and warning systems where reliability of operation is
important.

Features

• Glassivated Surface for Reliability and Uniformity

• Power Rated at Economical Prices

• Practical Level Triggering and Holding Characteristics

• Flat, Rugged, Thermopad Construction for Low Thermal Resistance,

High Heat Dissipation and Durability

• Sensitive Gate Triggering

• Pb−Free Packages are Available*

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SCRs

4 A RMS, 200 − 600 Volts

G

A

K

TO−225AA

CASE 077

STYLE 2

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2005

August, 2005 − Rev. 8

1 Publication Order Number:

MARKING DIAGRAM & PIN ASSIGNMENT

1. Cathode

2. Anode

3. Gate

Y = Year
WW = Work Week
C106xx = Device Code
xx = B, D, D1, M, M1
G = Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

YWW

C106xxG

C106/D

C106 Series

MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

J

Characteristic Symbol Max Unit

Peak Repetitive Off−State Voltage (Note 1)

(Sine Wave, 50−60 Hz, RGK = 1 kW,
T

= −40° to 110°C)

C

On-State RMS Current

C106B
C106D, C106D1*
C106M, C106M1*

V

DRM,

V

RRM

I

T(RMS)

V

200
400
600

4.0 A

(180° Conduction Angles, TC = 80°C)

Average On−State Current

I

T(AV)

2.55 A

(180° Conduction Angles, TC = 80°C)

Peak Non-Repetitive Surge Current

I

TSM

20 A

(1/2 Cycle, Sine Wave, 60 Hz, TJ = +110°C)
Circuit Fusing Considerations (t = 8. 3 ms ) I2t 1.65 A2s
Forward Peak Gate Power

P

GM

0.5 W

(Pulse Width v1.0 msec, TC = 80°C)
Forward Average Gate Power

P

G(AV)

0.1 W

(Pulse Width v1.0 msec, TC = 80°C)
Forward Peak Gate Current

I

GM

0.2 A

(Pulse Width v1.0 msec, TC = 80°C)
Operating Junction Temperature Range T
Storage Temperature Range T
Mounting Torque (Note 2)

J

stg

−

− 40 to +110 °C

− 40 to +150 °C

6.0 in. lb.

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.

1. V

and V

DRM

voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current

for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate

RRM

source such that the voltage ratings of the devices are exceeded.

2. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower
case-to-sink thermal resistance. Anode lead and heatsink contact pad are common.

THERMAL CHARACTERISTICS (T

= 25°C unless otherwise noted.)

C

Characteristic Symbol Max Unit

The r mal Resistance, Junction−to−Case
The r m a l Resistance, Junction−to−Ambient

R
R

Maximum Lead Temperature for Soldering Purposes 1/8 in. from Case for 10 Seconds T

q

JC

q

JA
L

3.0 °C/W
75 °C/W

260 °C

ORDERING INFORMATION

Device Package Shipping

C106B TO−225AA 500 Units / Box
C106BG TO−225AA

500 Units / Box

(Pb−Free)
C106D TO−225AA 500 Units / Box
C106DG TO−225AA

500 Units / Box

(Pb−Free)
C106D1* TO−225AA 500 Units / Box
C106D1G* TO−225AA

500 Units / Box

(Pb−Free)
C106M TO−225AA 500 Units / Box
C106MG TO−225AA

500 Units / Box

(Pb−Free)
C106M1* TO−225AA 500 Units / Box
C106M1G* TO−225AA

500 Units / Box

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*D1 signifies European equivalent for D suffix and M1 signifi es European equivalent for M suffix.

†

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2

C106 Series

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted.)

C

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Peak Repetitive Forward or Reverse Blocking Current

(V

AK

= Rated V

DRM

or V

, RGK = 1000 Ohms) TJ = 25°C

RRM

ON CHARACTERISTICS

Peak Forward On−State Voltage (Note 3)

(ITM = 4 A)

Gate Trigger Current (Continuous dc) (Note 4)

(VAK = 6 Vdc, RL = 100 Ohms) TJ = 25°C

Peak Reverse Gate Voltage (IGR = 10 mA)
Gate Trigger Voltage (Continuous dc) (Note 4)

(VAK = 6 Vdc, RL = 100 Ohms) TJ = 25°C

Gate Non −Trigger Voltage (Continuous dc) (Note 4)

(VAK = 12 V, RL = 100 Ohms, TJ = 110°C)

Latching Current

(VAK = 12 V, IG = 20 mA) TJ = 25°C

Holding Current (VD = 12 Vdc)

(Initiating Current = 20 mA, Gate Open) TJ = 25°C

DYNAMIC CHARACTERISTICS

Critical Rate−of−Rise of Off−State Voltage

(VAK = Rated V

, Exponential Waveform, RGK = 1000 Ohms,

DRM

TJ = 110°C)

3. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

4. RGK is not included in measurement.

TJ = 110°C

TJ = −40°C

TJ = −40°C

TJ = −40°C

TJ = −40°C
TJ = +110°C

I

, I

DRM

V

V

I

GT

GRM

V

V

GD

I

I

RRM

TM

GT

L

H

−

−

−

−

− − 2.2 V

−

−

15
35

− − 6.0 V

0.4

0.5

0.60

0.75

0.2 − − V

−

−

−

−

−

0.20

0.35

0.19

0.33

0.07

dv/dt − 8.0 −

10

100

200
500

0.8

1.0

5.0

7.0

3.0

6.0

2.0

mA
mA

mA

V

mA

mA

V/ms

Symbol Parameter

V
I

DRM

V
I

RRM

V
I

H

DRM

RRM

TM

Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current

Voltage Current Characteristic of SCR

+ Current

on state

I

at V

RRM

Reverse Avalanche Region

Anode −

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RRM

Reverse Blocking Region

(off state)

3

Anode +

V

TM

I

H

I

at V

DRM

DRM

Forward Blocking Region

(off state)

+ Voltage

C106 Series

110

100

90

°T , CASE TEMPERATURE ( C)

80

70

60

50

HALF SINE WAVE

40

RESISTIVE OR INDUCTIVE LOAD.
50 to 400 Hz

30

C

20
10

0 .4 .8 1.61.2 2.0 2.4 3.2

AVERAGE ON-STATE CURRENT (AMPERES)

I

T(AV)

Figure 1. Average Current Derating Figure 2. Maximum On−State Power Dissipation

100

mI

DC

2.8

3.6

4.0

10

8

HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD
50 TO 400Hz.

6

4

2

0

0

I

AVERAGE ON-STATE CURRENT (AMPERES)

T(AV)

(AV)

P , AVERAGE ON-STATE POWER DISSIPATION (WATTS)

1000

mI , HOLDING CURRENT ( A)

JUNCTION TEMPERATURE ≈ 110 °C

DC

3.6.4 .8 1.61.2 2.0 2.4 3.2 4.02.6

, GATE TRIGGER CURRENT ( A)

, GATE TRIGGER VOLTAGE (V)

V

GT

1

TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Gate Trigger Current versus

Junction Temperature

1.0

0.9

0.8

0.7

0.6

0.5

0.4

GT

0.3

0.2

TJ, JUNCTION TEMPERATURE (°C)

100

H

10

65

95−40 −25 −10 20535508010110

65

TJ, JUNCTION TEMPERATURE (°C)

95−40 −25 −10 205355080

110

Figure 4. Typical Holding Current versus

Junction Temperature

1000

mI , LATCHING CURRENT ( A)

100

L

110

10

95−40 −25 −10 205355080

65

TJ, JUNCTION TEMPERATURE (°C)

110

65

95−45 −25 −10 205355080

Figure 5. Typical Gate Trigger Voltage versus

Junction Temperature

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Figure 6. Typical Latching Current versus

Junction Temperature

4

C106 Series

PACKAGE INTERCHANGEABILITY

The dimensional diagrams below compare the critical dimensions of the ON Semiconductor C-106 package with
competitive devices. It has been demonstrated that the smaller dimensions of the ON Semiconductor package make it
compatible in most lead-mount and chassis-mount applications. The user is advised to compare all critical dimensions for
mounting compatibility.

.400

.295

____
.305

.145

____
.155

.148

____
.158

123

.050

____
.095

.020

____
.026

.425

____
.435

.575

____
.655

.040

.094 BSC

.025

____
.035

.115

____
.130

_

5 TYP

.095

____
.105

.015

____

.025

.045

____
.055

____

.360

.127

.135

____
.115

.385

____
.365

.420

____
.400

.105

____
.095

____

DIA

.123

.520

____
.480

.315

____
.285

.105

____
.095

.054

____
.046

.026

____
.019

.190

____
.170

ON Semiconductor C-106 Package

Competitive C-106 Package

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5

C106 Series

PACKAGE DIMENSIONS

TO−225

CASE 77−09

ISSUE Z

−B−

−A−

K

F

M

U

Q

132

H

V

G

0.25 (0.010) B

S

D

2 PL

M

0.25 (0.010) B

A

C

J

R

M

M

A

M

M

M

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.

DIM MIN MAX MIN MAX

A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
C 0.095 0.105 2.42 2.66
D 0.020 0.026 0.51 0.66
F 0.115 0.130 2.93 3.30
G 0.094 BSC 2.39 BSC
H 0.050 0.095 1.27 2.41
J 0.015 0.025 0.39 0.63
K 0.575 0.655 14.61 16.63
M 5 TYP 5 TYP

__

Q 0.148 0.158 3.76 4.01
R 0.045 0.065 1.15 1.65
S 0.025 0.035 0.64 0.88
U 0.145 0.155 3.69 3.93
V 0.040 −−− 1.02 −−−

STYLE 2:

PIN 1. CATHODE

2. ANODE

3. GATE

MILLIMETERSINCHES

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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C106/D

6