Datasheet BZX85B6V8, BZX85B6V2, BZX85B5V6, BZX85B5V1, BZX85B4V3 Datasheet (Vishay Telefunken)

Silicon Epitaxial Planar Z–Diodes

Features

D

Sharp edge in reverse characteristics

D

Low reverse current

D

Low noise

D

Very high stability

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Applications

Voltage stabilization

Absolute Maximum Ratings

Tj = 25_C

Parameter Test Conditions Type Symbol Value Unit
Power dissipation l=4mm, TL=25°C P
Junction temperature T
Storage temperature range T

Maximum Thermal Resistance

Tj = 25_C

Parameter Test Conditions Symbol Value Unit
Junction ambient l=4mm, TL=constant R

thJA

Electrical Characteristics

Tj = 25_C

Parameter Test Conditions Type Symbol Min Typ Max Unit

Forward voltage IF=200mA V

F

stg

V

j

94 9369

1.3 W

175

–65...+175

110 K/W

1 V

°

C

°

C

Document Number 85607
Rev. 3, 01-Apr-99 1 (5)

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Type V

BZX85B... V mA V

1) IZT for VZT and r

Znom

r

zjT

zjk

W W

at I

ZK

mA

IR at V

m

A V %/K

R

TK

2V7 2.7 80 2.64 to 2.76 < 20 < 400 1 < 150 1 –0.08 to –0.05
3V0 3.0 80 2.94 to 3.06 < 20 < 400 1 < 100 1 –0.08 to –0.05
3V3 3.3 80 3.24 to 3.36 < 20 < 400 1 < 40 1 –0.08 to –0.05
3V6 3.6 60 3.52 to 3.68 < 20 < 500 1 < 20 1 –0.08 to –0.05
3V9 3.9 60 3.82 to 3.98 < 15 < 500 1 < 10 1 –0.07 to –0.02
4V3 4.3 50 4.22 to 4.38 < 13 < 500 1 < 3 1 –0.07 to –0.01
4V7 4.7 45 4.60 to 4.80 < 13 < 500 1 < 3 1 –0.03 to +0.04
5V1 5.1 45 5.00 to 5.20 < 10 < 500 1 < 1 1.5 –0.01 to +0.04
5V6 5.6 45 5.48 to 5.72 < 7 < 400 1 < 1 2 0 to +0.045
6V2 6.2 35 6.08 to 6.32 < 4 < 300 1 < 1 3 +0.01 to +0.055
6V8 6.8 35 6.66 to 6.94 < 3.5 < 300 1 < 1 4 +0.015 to +0.06
7V5 7.5 35 7.35 to 7.65 < 3 < 200 0.5 < 1 4.5 +0.02 to +0.065
8V2 8.2 25 8.04 to 8.36 < 5 < 200 0.5 < 1 6.2 0.03 to 0.07
9V1 9.1 25 8.92 to 9.28 < 5 < 200 0.5 < 1 6.8 0.035 to 0.075

10 10 25 9.80 to 10.20 < 7 < 200 0.5 < 0.5 7.5 0.04 to 0.08
11 11 20 10.78 to 11.22 < 8 < 300 0.5 < 0.5 8.2 0.045 to 0.08
12 12 20 11.76 to 12.24 < 9 < 350 0.5 < 0.5 9.1 0.045 to 0.085
13 13 20 12.74 to 13.26 < 10 < 400 0.5 < 0.5 10 0.05 to 0.085
15 15 15 14.70 to 15.30 < 15 < 500 0.5 < 0.5 11 0.055 to 0.09
16 16 15 15.70 to 16.30 < 15 < 500 0.5 < 0.5 12 0.055 to 0.09
18 18 15 17.64 to 18.36 < 20 < 500 0.5 < 0.5 13 0.06 to 0.09
20 20 10 19.60 to 20.40 < 24 < 600 0.5 < 0.5 15 0.06 to 0.09
22 22 10 21.55 to 22.45 < 25 < 600 0.5 < 0.5 16 0.06 to 0.095
24 24 10 23.5 to 24.5 < 25 < 600 0.5 < 0.5 18 0.06 to 0.095
27 27 8 26.4 to 27.6 < 30 < 750 0.25 < 0.5 20 0.06 to 0.095
30 30 8 29.4 to 30.6 < 30 < 1000 0.25 < 0.5 22 0.06 to 0.095
33 33 8 32.4 to 33.6 < 35 < 1000 0.25 < 0.5 24 0.06 to 0.095
36 36 8 35.3 to 36.7 < 40 < 1000 0.25 < 0.5 27 0.06 to 0.095
39 39 6 38.2 to 39.8 < 50 < 1000 0.25 < 0.5 30 0.06 to 0.095

VZ

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Rev. 3, 01-Apr-992 (5)

Characteristics (Tj = 25_C unless otherwise specified)

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2.0

1.6

1.2
l=4mm

0.8

l=20mm

0.4

tot

P – Total Power Dissipation ( W )

l=10mm

0

200

95 9612

–50

0 50 100 150

T

– Ambient Temperature ( °C )

amb

Figure 1. Total Power Dissipation vs. Ambient Tempera-

ture

250

200

150

100

ll

1000

100

VR=20V

10

D

C – Diode Capacitance ( pF )

VR=30V

f=1 MHz

T

=25°C

amb

1

010203040

95 9616

VZ – Z-Voltage ( V )

Figure 3. Diode Capacitance vs. Z–Voltage

1000

W

100

10

IZ=1mA

2mA
5mA

10mA
20mA

VR=0V
VR=2V
VR=5V

50

60

50

TL=constant

25

thJA

R – Therm. Resist. Junction / Ambient ( K/W )

95 9613

0

0 5 10 15 20

l – Lead Length ( mm )

Figure 2. Thermal Resistance vs. Lead Length

1000

100

tp/T=0.1

tp/T=0.05

tp/T=0.02

tp/T=0.5
tp/T=0.2

10

Single Pulse

1

thp

Z – Thermal Resistance for Pulse Cond. (K/W)

–1

10

0

10

Figure 5. Thermal Response

30

tp/T=0.01

tp – Pulse Length ( ms )95 9614

Z

r – Differential Z-Resistance ( )

1

110

95 9615

VZ – Z-Voltage ( V )

Figure 4. Differential Z–Resistance vs. Z–Voltage

R

=110K/W

thJA

D

T=T

jmax–Tamb

iZM=(–VZ+(V

1

10

2

+4rzjDT/Z

Z

2

10

thp

1/2

)

)/(2rzj)

100

3

10

Document Number 85607

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Rev. 3, 01-Apr-99 3 (5)

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Dimensions in mm

technical drawings

according to DIN
specifications

Standard Glass Case

54 B 2 DIN 41880
JEDEC DO 41
Weight max. 0.3g

∅ 0.85 max.

Cathode Identification

4.1 max.26 min.

94 9368

∅ 2.5 max.

26 min.

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Rev. 3, 01-Apr-994 (5)

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Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their

impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

Document Number 85607
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