Datasheet BZX85C2V7, BZX85C43, BZX85C39, BZX85C62, BZX85C91 Specification

Zener Diodes

Features

• Silicon Planar Power Zener Diodes

• For use in stabilizing and clipping circuits
with high power rating

• The Zener voltages are graded according to the
international E 24 standard. Replace suffix "C"
with "B" for ± 2 % tolerance

• Lead (Pb)-free component

• Component in accordance to RoHS
2002/95/EC and WEEE 2002/96/EC

Applications

• Voltage stabilization

e2

BZX85-Series

Vishay Semiconductors

17173

Mechanical Data

Case: DO41 Glass case
Weight: approx. 310 mg
Cathode Band Color: black
Packaging Codes/Options:

TR/5 k per 13" reel (52 mm tape), 25 k/box
TAP/5 k per ammo pack (52 mm tape), 25 k/box

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Val ue Unit

Zener current
(see Table "Electrical Characteristics")

Power dissipation P

1)

Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature

tot

Thermal Characteristics

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Valu e Unit

Thermal resistance junction to ambient air R

Junction temperature T

Storage temperature T

1)

Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature

thJA

j

stg

1)

1.3

1)

110

175 °C

- 55 to + 175 °C

W

K/W

Document Number 85607

Rev. 1.8, 31-May-07

www.vishay.com

1

BZX85-Series

Vishay Semiconductors

Electrical Characteristics

Partnumber Zener Voltage

1)

Range

VZ at I

ZT

V Ω mA Ω mA %/°C µA V mA

min max min max

BZX85C2V7 2.5 2.9 < 20 80 < 400 1 - 0.08 - 0.05 < 150 1 360

BZX85C3V0 2.8 3.2 < 20 80 < 400 1 - 0.08 - 0.05 < 100 1 330

BZX85C3V3 3.1 3.5 < 20 80 < 400 1 - 0.08 - 0.05 < 40 1 300

BZX85C3V6 3.4 3.8 < 20 60 < 500 1 - 0.08 - 0.05 < 20 1 290

BZX85C3V9 3.7 4.1 < 15 60 < 500 1 - 0.07 - 0.02 < 10 1 280

BZX85C4V3 4 4.6 < 13 50 < 500 1 - 0.05 0.01 < 3 1 250

BZX85C4V7 4.4 5 < 13 45 < 600 1 - 0.03 0.04 < 3 1 215

BZX85C5V1 4.8 5.4 < 10 45 < 500 1 - 0.01 0.04 < 1 1.5 200

BZX85C5V6 5.2 6 < 7 45 < 400 1 0 0.045 < 1 2 190

BZX85C6V2 5.8 6.6 < 4 35 < 300 1 0.01 0.055 < 1 3 170

BZX85C6V8 6.4 7.2 < 3.5 35 < 300 1 0.015 0.06 < 1 4 155

BZX85C7V5 7 7.9 < 3 35 < 200 0.5 0.02 0.065 < 1 4.5 140

BZX85C8V2 7.7 8.7 < 5 25 < 200 0.5 0.03 0.07 < 1 6.2 130

BZX85C9V1 8.5 9.6 < 5 25 < 200 0.5 0.035 0.075 < 1 6.8 120

BZX85C10 9.4 10.6 < 7 25 < 200 0.5 0.04 0.08 < 0.5 7.5 105

BZX85C11 10.4 11.6 < 8 20 < 300 0.5 0.045 0.08 < 0.5 8.2 97

BZX85C12 11.4 12.7 < 9 20 < 350 0.5 0.045 0.085 < 0.5 9.1 88

BZX85C13 12.4 14.1 < 10 20 < 400 0.5 0.05 0.085 < 0.5 10 79

BZX85C15 13.8 15.6 < 15 15 < 500 0.5 0.055 0.09 < 0.5 11 71

BZX85C16 15.3 17.1 < 15 15 < 500 0.5 0.055 0.09 < 0.5 12 66

BZX85C18 16.8 19.1 < 20 15 < 500 0.5 0.06 0.09 < 0.5 13 62

BZX85C20 18.8 21.2 < 24 10 < 600 0.5 0.06 0.09 < 0.5 15 56

BZX85C22 20.8 23.3 < 25 10 < 600 0.5 0.06 0.095 < 0.5 16 52

BZX85C24 22.8 25.6 < 25 10 < 600 0.5 0.06 0.095 < 0.5 18 47

BZX85C27 25.1 28.9 < 30 8 < 750 0.25 0.06 0.095 < 0.5 20 41

BZX85C30 28 32 < 30 8 < 1000 0.25 0.06 0.095 < 0.5 22 36

BZX85C33 31 35 < 35 8 < 1000 0.25 0.06 0.095 < 0.5 24 33

BZX85C36 34 38 < 40 8 < 1000 0.25 0.06 0.095 < 0.5 27 30

BZX85C39 37 41 < 50 6 < 1000 0.25 0.06 0.095 < 0.5 30 28

BZX85C43 40 46 < 50 6 < 1000 0.25 0.06 0.095 < 0.5 33 26

BZX85C47 44 50 < 90 4 < 1500 0.25 0.06 0.095 < 0.5 36 23

BZX85C51 48 54 < 115 4 < 1500 0.25 0.06 0.095 < 0.5 39 21

BZX85C56 52 60 < 120 4 < 2000 0.25 0.06 0.095 < 0.5 43 19

BZX85C62 58 66 < 125 4 < 2000 0.25 0.06 0.095 < 0.5 47 16

BZX85C68 64 72 < 130 4 < 2000 0.25 0.055 0.095 < 0.5 51 15

BZX85C75 70 80 < 135 4 < 2000 0.25 0.055 0.095 < 0.5 56 14

BZX85C82 77 87 < 200 2.7 < 3000 0.25 0.055 0.095 < 0.5 62 12

BZX85C91 85 96 < 250 2.7 < 3000 0.25 0.055 0.095 < 0.5 68 10

BZX85C100 96 106 < 350 2.7 < 3000 0.25 0.055 0.095 < 0.5 75 9.4

1)

Measured with pulses tp = 5 ms

2)

Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case

3)

Measured with f = 1 kHz

Dynamic Resistance Temperature

3)

at I

r

ZT

ZT

3)

at I

r

ZK

ZK

Coefficient

of

Zener Voltage

αVZ at IZ = I

Reverse Leakage

at I

ZT

Current

R

at V

Admissible Zener

R

Current

I

Z

2)

www.vishay.com

2

Document Number 85607

Rev. 1.8, 31-May-07

BZX85-Series

Vishay Semiconductors

Electrical Characteristics

Partnumber Zener Voltage

1)

Range

VZ at I

ZT

V Ω mA Ω mA %/°C µA V mA

min max min max

BZX85B2V7 2.64 2.76 < 20 80 < 400 1 - 0.08 - 0.05 < 150 1 360

BZX85B3V0 2.94 3.06 < 20 80 < 400 1 - 0.08 - 0.05 < 100 1 330

BZX85B3V3 2.24 3.36 < 20 80 < 400 1 - 0.08 - 0.05 < 40 1 300

BZX85B3V6 3.53 3.67 < 20 60 < 500 1 - 0.08 - 0.05 < 20 1 290

BZX85B3V9 3.82 3.98 < 15 60 < 500 1 - 0.07 - 0.02 < 10 1 280

BZX85B4V3 4.21 4.39 < 13 50 < 500 1 - 0.05 0.01 < 3 1 250

BZX85B4V7 4.61 4.79 < 13 45 < 600 1 - 0.03 0.04 < 3 1 215

BZX85B5V1 5 5.2 < 10 45 < 500 1 - 0.01 0.04 < 1 1.5 200

BZX85B5V6 5.49 5.71 < 7 45 < 400 1 0 0.045 < 1 2 190

BZX85B6V2 6.08 6.32 < 4 35 < 300 1 0.01 0.055 < 1 3 170

BZX85B6V8 6.66 6.94 < 3.5 35 < 300 1 0.015 0.06 < 1 4 155

BZX85B7V5 7.35 7.65 < 3 35 < 200 0.5 0.02 0.065 < 1 4.5 140

BZX85B8V2 8.04 8.36 < 5 25 < 200 0.5 0.03 0.07 < 1 6.2 130

BZX85B9V1 8.92 9.28 < 5 25 < 200 0.5 0.035 0.075 < 1 6.8 120

BZX85B10 9.8 10.2 < 7 25 < 200 0.5 0.04 0.08 < 0.5 7.5 105

BZX85B11 10.8 11.2 < 8 20 < 300 0.5 0.045 0.08 < 0.5 8.2 97

BZX85B12 11.8 12.2 < 9 20 < 350 0.5 0.045 0.085 < 0.5 9.1 88

BZX85B13 12.7 13.3 < 10 20 < 400 0.5 0.05 0.085 < 0.5 10 79

BZX85B15 14.7 15.3 < 15 15 < 500 0.5 0.055 0.09 < 0.5 11 71

BZX85B16 15.7 16.3 < 15 15 < 500 0.5 0.055 0.09 < 0.5 12 66

BZX85B18 17.6 18.4 < 20 15 < 500 0.5 0.06 0.09 < 0.5 13 62

BZX85B20 19.6 20.4 < 24 10 < 600 0.5 0.06 0.09 < 0.5 15 56

BZX85B22 21.6 22.4 < 25 10 < 600 0.5 0.06 0.095 < 0.5 16 52

BZX85B24 23.5 24.5 < 25 10 < 600 0.5 0.06 0.095 < 0.5 18 47

BZX85B27 26.5 27.5 < 30 8 < 750 0.25 0.06 0.095 < 0.5 20 41

BZX85B30 29.4 30.6 < 30 8 < 1000 0.25 0.06 0.095 < 0.5 22 36

BZX85B33 32.3 33.7 < 35 8 < 1000 0.25 0.06 0.095 < 0.5 24 33

BZX85B36 35.3 36.7 < 40 8 < 1000 0.25 0.06 0.095 < 0.5 27 30

BZX85B39 38.2 39.8 < 50 6 < 1000 0.25 0.06 0.095 < 0.5 30 28

BZX85B43 42.1 43.9 < 50 6 < 1000 0.25 0.06 0.095 < 0.5 33 26

BZX85B47 46.1 47.9 < 90 4 < 1500 0.25 0.06 0.095 < 0.5 36 23

BZX85B51 50 52 < 115 4 < 1500 0.25 0.06 0.095 < 0.5 39 21

BZX85B56 54.9 57.1 < 120 4 < 2000 0.25 0.06 0.095 < 0.5 43 19

BZX85B62 60.8 63.2 < 125 4 < 2000 0.25 0.06 0.095 < 0.5 47 16

BZX85B68 66.6 69.4 < 130 4 < 2000 0.25 0.055 0.095 < 0.5 51 15

BZX85B75 73.5 76.5 < 135 4 < 2000 0.25 0.055 0.095 < 0.5 56 14

BZX85B82 80.4 83.6 < 200 2.7 < 3000 0.25 0.055 0.095 < 0.5 62 12

BZX85B91 89.2 92.8 < 250 2.7 < 3000 0.25 0.055 0.095 < 0.5 68 10

BZX85B100 98 102 < 350 2.7 < 3000 0.25 0.055 0.095 < 0.5 75 9.4

1)

Measured with pulses tp = 5 ms

2)

Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case

3)

Measured with f = 1 kHz

Dynamic Resistance Temperature

3)

at I

r

ZT

ZT

3)

at I

r

ZK

ZK

Coefficient

of

Zener Voltage

αVZ at IZ = I

Reverse Leakage

at I

ZT

Current

R

at V

R

Admissible Zener

Current

I

Z

2)

Document Number 85607

Rev. 1.8, 31-May-07

www.vishay.com

3

BZX85-Series

Vishay Semiconductors

Typical Characteristics

T

= 25 °C, unless otherwise specified

amb

°C/W

3

10

5
4
3
2

r

thA

2

10

5

0.5
4
3

0.2
2

10

0.1

0.05

5
4
3

0.02

2

0.01

1

10-510-410

t

P

t

P

___

v =

T

T

-3

10-210-1110 s

t

P

P

I

18458

Figure 1. Pulse Thermal Resistance vs. Pulse Duration

Ω

3

10

7

5

4

3

r

zj

2

2

10

7

5

4

3

2

10

3254

0.1

54

2

56

43

18459

mA

110

3

I

Z

Figure 2. Dynamic Resistance vs. Zener Current

°C/W

200

R

thA

100

max.

typ.

0

010

20 30

lead length

18461

mm

Figure 4. Thermal Resistance vs. Lead Length

W

2

P

tot

1

0

0 100

T

amb

200 °C

18462

Figure 5. Admissible Power Dissipation vs. Ambient Temperature

r

zj

Figure 3. Dynamic Resistance vs. Zener Current

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4

Ω

100

10

Ω

3

7

5

4

3

2

7

5

4

3

2

43

36

30

24

22
18

1

10 100 mA

1

2

3254

54

3

I

18460

Z

10

5
4

3
2

r

zj

5V1

2

10

5

4
3
2

10

5

4
3
2

1

18

6V2

3254

1

2

4V3

12

10

7V5

10 100 mA

54

7

3

I

Z

7

18463

Figure 6. Dynamic Resistance vs. Zener Current

Document Number 85607

Rev. 1.8, 31-May-07

BZX85-Series

Vishay Semiconductors

mA

240

200

I

Z

160

120

3V9

4V7

5V6

6V8

8V2

10

80

40

Tj = 25 °C

12

0

01234567

Figure 7. Breakdown Characteristics

mA

60

15 18

50

I

Z

40

30

20

10

0

0 5 101520253035

Figure 8. Breakdown Characteristics

Package Dimensions in millimeters (inches)

8 9 1011 12131415 V

V

Z

Tj = 25 °C

22

27

33

39

40 45 50 V

V

Z

18456

47

18457

94 9368

Document Number 85607

Rev. 1.8, 31-May-07

www.vishay.com

5

BZX85-Series

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer

application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or

unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,

and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated

with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

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Document Number 85607

Rev. 1.8, 31-May-07

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

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Revision: 18-Jul-08 1