Datasheet BZX84J-B10, BZX84J-B11, BZX84J-B12, BZX84J-B13, BZX84J-B15 Datasheet (NXP) [ru]

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Page 1
SOD323F
21
006aaa152
2
1
BZX84J series
Single Zener diodes
Rev. 2 — 1 August 2011 Product data sheet

1. Product profile

1.1 General description

General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device (SMD) plastic package.

1.2 Features and benefits

Non-repetitive peak reverse power
dissipation: 40 W
Total power dissipation: 550 mW Two tolerance series: 2%and5%AEC-Q101 qualified Low differential resistanceSmall plastic package suitable for
surface-mounted design
Wide working voltage range: nominal
2.4 V to 75 V (E24 range)

1.3 Applications

General regulation functions
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V P
F ZSM
forward voltage IF=100mA non-repetitive peak reverse
power dissipation
[1] Pulse test: tp 300 s; 0.02. [2] t
=100s; square wave; Tj=25C prior to surge
p

2. Pinning information

Table 2. Pinning
Pin Description Simplified outline Symbol
1 cathode 2 anode
[1]
--1.1V
[2]
--40W
[1]
[1] The marking bar indicates the cathode.
Page 2
NXP Semiconductors

3. Ordering information

Table 3. Ordering information
Type number Package
BZX84J-B2V4 to B ZX84J-C75
[1] The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.
[1]

4. Marking

BZX84J series
Single Zener diodes
Name Description Version
SC-90 plastic surface-mounted package; 2 leads SOD323F
code
Type number Marking
code
Type number Marking
code
Ty pe number Marking
code
Table 4. Marking codes
Type number Marking
BZX84J-B2V4 SL BZX84J-B15 SC BZX84J-C2V4 U3 BZX84J-C15 TV BZX84J-B2V7 SM BZX84J-B16 SD BZX84J-C2V7 U4 BZX84J-C16 TW BZX84J-B3V0 ST BZX84J-B18 SE BZX84J-C3V0 U9 BZX84J-C18 TX BZX84J-B3V3 SU BZX84J-B20 SF BZX84J-C3V3 UA BZX84J-C20 TY BZX84J-B3V6 SV BZX84J-B22 SG BZX84J-C3V6 UB BZX84J-C22 TZ BZX84J-B3V9 SW BZX84J-B24 SH BZX84J-C3V9 UC BZX84J-C24 U1 BZX84J-B4V3 SZ BZX84J-B27 SK BZX84J-C4V3 UF BZX84J-C27 U2 BZX84J-B4V7 TA BZX84J-B30 SN BZX84J-C4V7 UG BZX84J-C30 U5 BZX84J-B5V1 TD BZX84J-B33 SP BZX84J-C5V1 UL BZX84J-C33 U6 BZX84J-B5V6 TE BZX84J-B36 SR BZX84J-C5V6 UM BZX84J-C36 U7 BZX84J-B6V2 TH BZX84J-B39 SS BZX84J-C6V2 UR BZX84J-C39 U8 BZX84J-B6V8 TK BZX84J-B43 SX BZX84J-C6V8 US BZX84J-C43 UD BZX84J-B7V5 TM BZX84J-B47 SY BZX84J-C7V5 UU BZX84J-C47 UE BZX84J-B8V2 TN BZX84J-B51 TB BZX84J-C8V2 UV BZX84J-C51 UH BZX84J-B9V1 TP BZX84J-B56 TC BZX84J-C9V1 UW BZX84J-C56 UK BZX84J-B10 S8 BZX84J-B62 TF BZX84J-C10 TR BZX84J-C62 UN BZX84J-B11 S9 BZX84J-B68 TG BZX84J-C11 TS BZX84J-C68 UP BZX84J-B12 SA BZX84J-B75 TL BZX84J-C12 TT BZX84J-C75 UT BZX84J-B13 SB - - BZX84J-C13 TU - -
BZX84J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 1 August 2011 2 of 13
Page 3
NXP Semiconductors

5. Limiting values

Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
I
F
I
ZSM
P
ZSM
P
tot
T
j
T
amb
T
stg
[1] tp=100s; square wave; Tj=25C prior to surge [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm
BZX84J series
Single Zener diodes
forward current - 250 mA non-repetitive peak reverse
current
non-repetitive peak reverse power dissipation
total power dissipation T
amb
25 C junction temperature - 150 C ambient temperature 55 +150 C storage temperature 65 +150 C
2
.
[1]
-see
Table 8
and 9
[1]
-40W
[2]
-550mW

6. Thermal characteristics

Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from junction to ambient
R
th(j-sp)
thermal resistance from junction to solder point
[1] Device mounted on an FR4 PCB, sing le-sided copper, tin-plated, mounting pad for cathode 1 cm2. [2] Soldering point of cathode tab.

7. Characteristics

Table 7. Characteristics
=25C unless otherwise specified.
T
j
Symbol Parameter Conditions Min Typ Max Unit
V
F
[1] Pulse test: tp 300 s; 0.02.
forward voltage
in free air
[1]
- - 230 K/W
[2]
--55K/W
[1]
IF=10mA --0.9V
= 100 mA - - 1.1 V
I
F
BZX84J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 1 August 2011 3 of 13
Page 4
NXP Semiconductors
BZX84J series
Single Zener diodes
Table 8. Characteristics per type; BZX84J-B2V4 to BZX84J-C24
Tj=25C unless otherwise specified.
BZX84J­xxx
Sel Working
voltage VZ(V)
Differential resistance
r
()
dif
Reverse current
IR(A)
T emperature coefficient
SZ(mV/K)
Diode capacitance
Cd(pF)
[1]
Non-repetitive peak reverse current
ZSM
(A)
[2]
I IZ=5mA IZ=1mA IZ=5mA IZ=5mA Min Max Max Max Max VR(V) Min Max Max Max
2V4 B 2.35 2.45 400 100 50 1 3.5 0 450 12
C2.22.6
2V7 B 2.65 2.75 450 100 20 1 3.5 0 440 12
C2.52.9
3V0 B 2.94 3.06 500 95 10 1 3.5 0 425 12
C2.83.2
3V3 B 3.23 3.37 500 95 5 1 3.5 0 410 12
C3.13.5
3V6 B 3.53 3.67 500 90 5 1 3.5 0 390 12
C3.43.8
3V9 B 3.82 3.98 500 90 3 1 3.5 0 370 12
C3.74.1
4V3 B 4.21 4.39 600 90 3 1 3.5 0 350 12
C4 4.6
4V7 B 4.61 4.79 500 80 3 2 3.5 0.2 325 12
C4.45
5V1 B 5 5.2 480 60 2 2 2.7 1.2 300 12
C4.85.4
5V6 B 5.49 5.71 400 40 1 2 22.5275 12
C5.26
6V2 B 6.08 6.32 150 10 3 4 0.4 3.7 250 12
C5.86.6
6V8 B 6.66 6.94 80 15 2 4 1.2 4.5 215 12
C6.47.2
7V5 B 7.35 7.65 80 10 1 5 2.5 5.3 170 4
C7 7.9
8V2 B 8.04 8.36 80 10 0.7 5 3.2 6.2 150 4
C7.78.7
9V1 B 8.92 9.28 100 10 0.5 6 3.8 7 120 3
C8.59.6
10 B 9.8 10.2 150 10 0.2 7 4.5 8 110 3
C 9.4 10.6
11 B 10.8 11.2 150 10 0.1 8 5.4 9 108 2.5
C 10.4 11.6
12 B 11.8 12.2 150 10 0.1 8 6 10 105 2.5
C 11.4 12.7
BZX84J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 1 August 2011 4 of 13
Page 5
NXP Semiconductors
BZX84J series
Single Zener diodes
Table 8. Characteristics per type; BZX84J-B2V4 to BZX84J-C24
…continued
Tj=25C unless otherwise specified.
BZX84J­xxx
Sel Working
voltage V
(V)
Z
Differential resistance
r
()
dif
Reverse current
I
(A)
R
T emperature coefficient
S
(mV/K)
Z
Diode capacitance
d
(pF)
[1]
C
Non-repetitive
peak reverse
current
I
ZSM
IZ=5mA IZ=1mA IZ=5mA IZ=5mA Min Max Max Max Max VR(V) Min Max Max Max
13 B 12.7 13.3 170 10 0.1 8 7 11 103 2.5
C 12.4 14.1
15 B 14.7 15.3 200 15 0.05 10.5 9.2 13 99 2
C 13.8 15.6
16 B 15.7 16.3 200 20 0.05 11.2 10.4 14 97 1.5
C 15.3 17.1
18 B 17.6 18.4 225 20 0.05 12.6 12.4 16 93 1.5
C 16.8 19.1
20 B 19.6 20.4 225 20 0.05 14 14.4 18 88 1.5
C 18.8 21.2
22 B 21.6 22.4 250 25 0.05 15.4 16.4 20 84 1.25
C 20.8 23.3
24 B 23.5 24.5 250 30 0.05 16.8 18.4 22 80 1.25
C 22.8 25.6
(A)
[2]
[1] f = 1 MHz; VR=0V
= 100 s; square wave; Tj=25C prior to surge
[2] t
p
BZX84J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 1 August 2011 5 of 13
Page 6
NXP Semiconductors
BZX84J series
Single Zener diodes
Table 9. Characteristics per type; BZX84J-B27 to BZX84J-C75
Tj=25C unless otherwise specified.
BZX84J­xxx
Sel Working
voltage VZ(V)
Differential resistance
r
()
dif
Reverse current
IR(A)
Temperature coefficient
SZ(mV/K)
Diode capacitance
Cd(pF)
[1]
Non-repetitive peak reverse current
I
ZSM
IZ=2mA IZ=0.5mA IZ=2mA IZ=2mA Min Max Max Max Max VR(V) Min Max Max Max
27 B 26.5 27.5 250 40 0.05 18.9 21.4 25.3 73 1
C 25.1 28.9
30 B 29.4 30.6 250 40 0.05 21 24.4 29.4 66 1
C2832
33 B 32.3 33.7 275 40 0.05 23.1 27.4 33.4 60 0.9
C3135
36 B 35.3 36.7 300 60 0.05 25.2 30.4 37.4 59 0.8
C3438
39 B 38.2 39.8 300 75 0.05 27.3 33.4 41.2 58 0.7
C3741
43 B 42.1 43.9 325 80 0.05 30.1 37.6 46.6 56 0.6
C4046
47 B 46.1 47.9 325 90 0.05 32.9 42 51.8 55 0.5
C4450
51 B 50 52 350 110 0.05 35.7 46.6 57.2 52 0.4
C4854
56 B 54.9 57.1 375 120 0.05 39.2 52.2 63.8 49 0.3
C5260
62 B 60.8 63.2 400 140 0.05 43.4 58.8 71.6 44 0.3
C5866
68 B 66.6 69.4 400 160 0.05 47.6 65.6 79.8 40 0.25
C6472
75 B 73.5 76.5 400 175 0.05 52.5 73.4 88.6 35 0.2
C7079
(A)
[2]
[1] f = 1 MHz; VR=0V [2] t
= 100 s; square wave; Tj=25C prior to surge
p
BZX84J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 1 August 2011 6 of 13
Page 7
NXP Semiconductors
mbg801
10
3
1
tp (ms)
P
ZSM
(W)
10
10
2
10
1
10
1
(1)
(2)
VF (V)
0.6 10.8
mbg781
100
200
300
I
F
(mA)
0
IZ (mA)
10
1
10
2
101
mld444
1
0.5
1.5
0
0.5
S
Z
(mV/K)
2
2V4
4V7
4V3
3V9
3V6
3V3
3V0
2V7
mld445
4
0
8
12
S
Z
(mV/K)
4 I
Z
(mA)
10
1
10
2
101
15
13 12
11 10
9V1
5V6 5V1
8V2 7V5 6V8 6V2
BZX84J series
Single Zener diodes
(1) Tj=25C (prior to surge) (2) T
= 150 C (prior to surge)
j
Fig 1. Non-repetitive peak reverse power dissipation
as a function of pulse duration; maximum
Fig 2. Forward current as a function of forward
=25C
T
j
voltage; typical values
values
BZX84J-B/C2V4 to BZX84J-B/C4V7
=25C to 150 C
T
j
Fig 3. Temperature coefficient as a function of
BZX84J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 1 August 2011 7 of 13
working current; typical values
Fig 4. Temperature coefficient as a function of
BZX84J-B/C5V1 to BZX84J-B/C15 Tj=25C to 150 C
working current; typical values
Page 8
NXP Semiconductors
VZ (V)
0108462
006aaa996
20
30
10
40
50
I
Z
(mA)
0
V
Z(nom)
(V) = 2.7
3.3
3.9
4.7
5.6 6.8 8.2
VZ (V)
0403010 20
006aaa997
10
20
30
5
15
25
I
Z
(mA)
0
V
Z(nom)
(V) = 10
36
33272218
12
15
BZX84J series
Single Zener diodes
Tj=25C BZX84J-B/C2V7 to BZX84J-B/C8V2
Fig 5. Working current as a function of working
voltage; typical values

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.
Tj=25C BZX84J-B/C10 to BZX84J-B/C36
Fig 6. Working current as a function of working
voltage; typical values
BZX84J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 1 August 2011 8 of 13
Page 9
NXP Semiconductors
04-09-13Dimensions in mm
0.80
0.65
0.25
0.10
0.5
0.3
2.7
2.3
1.8
1.6
0.40
0.25
1.35
1.15
1
2
0.951.65
2.2
2.1
3.05
solder lands
solder resist
occupied area
solder paste
Dimensions in mm
0.5
(2×)
0.6
(2×)
0.6 (2×)0.5 (2×)
sod323f_fr

9. Package outline

Fig 7. Package outline SOD323F (SC-90)
BZX84J series
Single Zener diodes

10. Packing information

Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
Type number Package Description Packing quantity
BZX84J-B2V4 to
BZX84J-C75
[1] For further information and the availability of packing methods, see Section 14.

11. Soldering

[1]
3000 10000
SOD323F 4 mm pitch, 8 mm tape and reel -115 -135
BZX84J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Reflow soldering is the only recommended soldering method.
Fig 8. Reflow soldering footprint SOD323F (SC-90)
Product data sheet Rev. 2 — 1 August 2011 9 of 13
Page 10
NXP Semiconductors
BZX84J series
Single Zener diodes

12. Revision history

Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BZX84J_SER v.2 20110801 Product data sheet - BZX84J_SER v.1 Modifications:
BZX84J_SER v.1 20070301 Product data sheet - -
Figure 5 and Figure 6 updated
Figure 8 updated
Section 1.2 “Features and benefits” updated
Section 5 “Limiting values” updated
Section 8 “Te st in formation” added
Section 13 “Legal information” updated
BZX84J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 1 August 2011 10 of 13
Page 11
NXP Semiconductors
BZX84J series
Single Zener diodes

13. Legal information

13.1 Data sheet status

Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this docu ment may have change d since this d ocument was p ublished and may dif fe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
[1][2]
Product status
[3]
Definition

13.2 Definitions

Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

13.3 Disclaimers

Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third part y customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is open for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
, unless otherwise
BZX84J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 1 August 2011 11 of 13
Page 12
NXP Semiconductors
BZX84J series
Single Zener diodes
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trademarks are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BZX84J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 1 August 2011 12 of 13
Page 13
NXP Semiconductors

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Packing information . . . . . . . . . . . . . . . . . . . . . 9
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
14 Contact information. . . . . . . . . . . . . . . . . . . . . 12
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
BZX84J series
Single Zener diodes
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 1 August 2011
Document identifier: BZX84J_SER
Page 14
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