Page 1
BZX84C2V4ET1 Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
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Specification Features
• 225 mW Rating on FR−4 or FR−5 Board
• Zener Breakdown Voltage Range − 2.4 V to 75 V
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
• ESD Rating of Class 3 (>16 kV) per Human Body Model
• Peak Power − 225 W (8 X 20 s)
• Pb−Free Package is Available
Mechanical Characteristics
Void-free, transfer-molded, thermosetting plastic case
CASE:
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MAXIMUM RATINGS
Rating Symbol Max Unit
Peak Power Dissipation @ 20 s (Note 1)
@ T
≤ 25°C
L
Total Power Dissipation on FR−5 Board,
(Note 2) @ T
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Power Dissipation on Alumina
Substrate, (Note 3) @ T
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage
Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Nonrepetitive current pulse per Figure 9.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.
= 25°C
A
= 25°C
A
P
P
R
P
R
TJ, T
stg
225 Watts
225
1.8mWmW/°C
556 °C/W
300
2.4mWmW/°C
417 °C/W
−65 to
+150
°C
pk
D
JA
D
JA
3
Cathode
3
1
2
1
Anode
SOT−23
CASE 318
STYLE 8
MARKING DIAGRAM
xxxM
xxx = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device Package Shipping
BZX84CxxxET1 SOT−23 3000/Tape & Reel
BZX84CxxxET1G SOT−23
(Pb−Free)
BZX84CxxxET3 SOT−23 10,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
3000/Tape & Reel
†
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 3
1 Publication Order Number:
BZX84C2V4ET1/D
Page 2
BZX84C2V4ET1 Series
Devi
@ I
@ I
@
V
0
Devi
@ I
@ I
@ I
0
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C
unless otherwise noted, V
Symbol
V
Reverse Zener Voltage @ I
Z
I
Z
V
V
V
Reverse Current
ZT
Maximum Zener Impedance @ I
ZT
I
Reverse Leakage Current @ V
R
Reverse Voltage
R
I
Forward Current
F
Forward Voltage @ I
F
Maximum Temperature Coefficient of V
Z
C Max. Capacitance @ VR = 0 and f = 1 MHz
= 0.95 V Max. @ IF = 10 mA)
F
Parameter
ZT
ZT
R
F
Z
VRV
Z
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
(Devices listed in
Device
BZX84C3V3ET1 BA4 3.1 3.3 3.5 95 2.3 2.9 600 3.6 4.2 40 5 1 −3.5 0 450
BZX84C4V7ET1 BA9 4.4 4.7 5 80 3.7 4.7 500 4.5 5.4 15 3 2 −3.5 0.2 260
BZX84C5V1ET1 BB1 4.8 5.1 5.4 60 4.2 5.3 480 5 5.9 15 2 2 −2.7 1.2 225
BZX84C5V6ET1 BB2 5.2 5.6 6 40 4.8 6 400 5.2 6.3 10 1 2 −2.0 2.5 200
BZX84C6V2ET1, G* BB3 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185
BZX84C6V8ET1 BB4 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155
BZX84C7V5ET1 BB5 7 7.5 7.9 15 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140
BZX84C10ET1 BB8 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130
BZX84C12ET1 BC1 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130
BZX84C15ET1 BC3 14.3 15 15.8 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110
BZX84C16ET1 BC4 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105
BZX84C18ET1 BC5 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100
BZX84C24ET1 BC8 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80
Device
BZX84C27ET1 BC9 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 0.05 18.9 21.4 25.3 70
BZX84C43ET1 BK6 40 43 46 150 39.7 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40
*The “G” suffix indicates Pb−Free package available.
4. Zener voltage is measured with a pulse test current I
bold, italic
ce
Mark-
ing
ce
Mark-
ing
are ON Semiconductor Preferred devices.)
VZ1 (V)
@I
=5mA
ZT1
(Note 4)
Min Nom Max
VZ1 Below
@I
=2mA
ZT1
Min Nom Max
Z
ZT1
()
ZT1
=
5 mA
Z
ZT1
Below
ZT1
=
2 mA
VZ2 (V)
@I
=1mA
ZT2
(Note 4)
Min Max
VZ2 Below
@I
=
ZT2
0.1 mA
Min Max
at an ambient temperature of 25°C
Z
Z
ZT2
()
ZT2
=
1 mA
Z
ZT2
Below
ZT4
=
0.5 mA
VZ3 (V)
@I
=20 mA
ZT3
(Note 4)
Min Max
VZ3 Below
@I
=10m
ZT3
A
Min Max
Z
ZT3
()
I
ZT3
20 mA
Z
ZT3
Below
ZT3
=
10 mA
I
I
F
VZ
(mV/k)
=5 mA
ZT1
VZ
low
ZT1
mA
= 2
V
C (pF)
1 MHz
C (pF)
1 MHz
I
V
R
F
I
ZT
Max
Reverse
Leakage
Current
I
=
R
A
Max
Reverse
Leakage
Current
I
R
A
@ I
V
R
@
@
(V)
V
(V)
R
Min Max
(mV/k) Be-
@ I
Min Max
@
R
f =
@ V
=
f =
=
R
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BZX84C2V4ET1 Series
TYPICAL CHARACTERISTICS
−1
, TEMPERATURE COEFFICIENT (mV/ C)°θ
VZ
−2
−3
1000
100
8
7
TYPICAL TC VALUES
6
5
4
3
2
1
0
Figure 1. Temperature Coefficients
(Temperature Range −55°C to +150°C)
IZ = 1 mA
5 mA
VZ @ I
VZ, NOMINAL ZENER VOLTAGE (V)
TJ = 255C
I
= 0.1 I
Z(AC)
f = 1 kHz
Z(DC)
100
TYPICAL TC VALUES
VZ @ I
ZT
10
, TEMPERATURE COEFFICIENT (mV/ C)°θ
VZ
12111098765432
1
10 100
V
, NOMINAL ZENER VOLTAGE (V)
Z
ZT
Figure 2. Temperature Coefficients
(Temperature Range −55°C to +150°C)
1000
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
100
20 mA
10
, DYNAMIC IMPEDANCE ( )Ω
ZT
Z
1
, NOMINAL ZENER VOLTAGE
V
Z
101
Figure 3. Effect of Zener Voltage on
100
10
, FORWARD CURRENT (mA)
F
I
150°C
1
75°C 25°C 0°C
1.21.11.00.90.80.70.60.50.4
VF, FORWARD VOLTAGE (V)
Figure 4. Typical Forward Voltage
Zener Impedance
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Page 4
BZX84C2V4ET1 Series
TYPICAL CHARACTERISTICS
1000
100
10
C, CAPACITANCE (pF)
1
100
10
1
0 V BIAS
1 V BIAS
BIAS AT
50% OF V
NOM
Z
101
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 5. T ypical Capacitance
TA = 25°C
TA = 25°C
100
1000
100
10
0.1
0.01
, LEAKAGE CURRENT ( A)µ
R
I
0.001
0.0001
0.00001
100
10
1
+150°C
+25°C
−55°C
90
80706050403020100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 6. T ypical Leakage Current
TA = 25°C
1
, ZENER CURRENT (mA)
Z
0.1
I
0.01
VZ, ZENER VOLTAGE (V)
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V)
100
90
80
70
60
50
40
30
20
% OF PEAK PULSE CURRENT
10
0
, ZENER CURRENT (mA)
Z
0.1
I
0.01
1086420
12
10 30 50 70 90
VZ, ZENER VOLTAGE (V)
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
t
P
PEAK VALUE I
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 s
HALF VALUE I
t, TIME (s)
t
r
020406080
RSM
@ 8 s
RSM
/2 @ 20 s
Figure 9. 8 × 20 s Pulse Waveform
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BZX84C2V4ET1 Series
PACKAGE DIMENSIONS
SOT−23
TO−236AB
CASE 318−09
ISSUE AJ
A
L
3
1
V
G
BS
2
C
D
H
J
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318−01, −02, AND −06 OBSOLETE, NEW
STANDARD 318−09.
INCHES
DIMAMIN MAX MIN MAX
0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0385 0.0498 0.99 1.26
D 0.0140 0.0200 0.36 0.50
G 0.0670 0.0826 1.70 2.10
H 0.0040 0.0098 0.10 0.25
J 0.0034 0.0070 0.085 0.177
K 0.0180 0.0236 0.45 0.60
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.0984 2.10 2.50
V 0.0177 0.0236 0.45 0.60
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
MILLIMETERS
SOLDERING FOOTPRINT*
0.95
0.95
0.037
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
SCALE 10:1
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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BZX84C2V4ET1 Series
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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For additional information, please contact your
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BZX84C2V4ET1/D
6
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