Page 1
DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D088
BZX84 series
Voltage regulator diodes
Product data sheet
Supersedes data of 1999 May 18
2003 Apr 10
Page 2
NXP Semiconductors Product data sheet
Top view
Voltage regulator diodes BZX84 series
FEATURES
• Total power dissipation: max. 250 mW
• Three tolerance series: ±1%, ±2% and approx. ±5%
• Working voltage range: nom. 2.4 to 75 V (E24 range)
• Non-repetitive peak reverse power dissipation:
40 W.
max.
APPLICATIONS
• General regulation functions.
DESCRIPTION
Low-power voltage regulator diodes in small SOT23
plastic SMD packages.
The diodes are available in the normalized E24 ±1%
(BZX84-A), ±2% (BZX84-B) and approx. ±5% (BZX84-C)
tolerance range. The
nominal working voltages from 2.4
series consists of 37 types with
to 75 V.
PINNING
PIN DESCRIPTION
1 anode
2 not connected
3 cathode
handbook, halfpage
21
2
n.c.
3
Fig.1 Simplified outline (SOT23) and symbol.
1
3
MAM243
2003 Apr 10 2
Page 3
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX84 series
MARKING
TYPE
NUMBER
MARKING
(1)
CODE
TYPE
NUMBER
MARKING
(1)
CODE
TYPE
NUMBER
MARKING
(1)
CODE
TYPE
NUMBER
MARKING
(1)
CODE
Marking codes for BZX84-A2V4 to BZX84-A75
BZX84-A2V4 Y50 or ∗50 BZX84-A6V2 Y60 or ∗60 BZX84-A16 Y70 BZX84-A43 Y80 or ∗C5
BZX84-A2V7 Y51 or ∗51 BZX84-A6V8 Y61 or ∗61 BZX84-A18 Y71 BZX84-A47 Y81
BZX84-A3V0 Y52 or ∗52 BZX84-A7V5 Y62 or ∗62 BZX84-A20 Y72 or ∗C2 BZX84-A51 Y82 or ∗C6
BZX84-A3V3 Y53 BZX84-A8V2 Y63 or ∗63 BZX84-A22 Y73 BZX84-A56 Y83
BZX84-A3V6 Y54 or ∗C1 BZX84-A9V1 Y64 or ∗64 BZX84-A24 Y74 BZX84-A62 Y84
BZX84-A3V9 Y55 or ∗55 BZX84-A10 Y65 or ∗65 BZX84-A27 Y75 or ∗75 BZX84-A68 Y85
BZX84-A4V3 Y56 or ∗56 BZX84-A11 Y66 or ∗04 BZX84-A30 Y76 BZX84-A75 Y86 or ∗86
BZX84-A4V7 Y57 or ∗57 BZX84-A12 Y67 or ∗67 BZX84-A33 Y77 − −
BZX84-A5V1 Y58 or ∗58 BZX84-A13 Y68 or ∗C0 BZX84-A36 Y78 or ∗C3 − −
BZX84-A5V6 Y59 or ∗59 BZX84-A15 Y69 or ∗69 BZX84-A39 Y79 or ∗C4 − −
Marking codes for BZX84-B2V4 to BZX84-B75
BZX84-B2V4 Z50 or ∗Z0 BZX84-B6V2 Z60 or ∗R5 BZX84-B16 Z70 or ∗70 BZX84-B43 Z80 or ∗S5
BZX84-B2V7 Z51 or ∗Z1 BZX84-B6V8 Z61 or ∗R6 BZX84-B18 Z71 or ∗71 BZX84-B47 Z81 or ∗S6
BZX84-B3V0 Z52 or ∗S1 BZX84-B7V5 Z62 or ∗R8 BZX84-B20 Z72 or ∗72 BZX84-B51 Z82 or ∗S9
BZX84-B3V3 Z53 or ∗S2 BZX84-B8V2 Z63 or ∗R9 BZX84-B22 Z73 or ∗73 BZX84-B56 Z83 or ∗R0
BZX84-B3V6 Z54 or ∗S3 BZX84-B9V1 Z64 or ∗T1 BZX84-B24 Z74 or ∗74 BZX84-B62 Z84 or ∗R3
BZX84-B3V9 Z55 or ∗S4 BZX84-B10 Z65 or ∗66 BZX84-B27 Z75 or ∗Z5 BZX84-B68 Z85 or ∗R4
BZX84-B4V3 Z56 or ∗S7 BZX84-B11 Z66 or ∗Z6 BZX84-B30 Z76 or ∗Z4 BZX84-B75 Z86 or ∗R7
BZX84-B4V7 Z57 or ∗S8 BZX84-B12 Z67 or ∗Z7 BZX84-B33 Z77 or ∗Y1 − −
BZX84-B5V1 Z58 or ∗R1 BZX84-B13 Z68 or ∗Z8 BZX84-B36 Z78 or ∗Y2 − −
BZX84-B5V6 Z59 or ∗R2 BZX84-B15 Z69 or ∗Z9 BZX84-B39 Z79 or ∗S0 − −
Marking codes for BZX84-C2V4 to BZX84-C75
BZX84-C2V4 Z11 or ∗T3 BZX84-C6V2 Z4∗ BZX84-C16 Y5∗ BZX84-C43 Y15 or ∗B4
BZX84-C2V7 Z12 or ∗T4 BZX84-C6V8 Z5∗ BZX84-C18 Y6∗ BZX84-C47 Y16 or ∗B5
BZX84-C3V0 Z13 or ∗T9 BZX84-C7V5 Z6∗ BZX84-C20 Y7∗ BZX84-C51 Y17 or ∗B7
BZX84-C3V3 Z14 or ∗B1 BZX84-C8V2 Z7∗ BZX84-C22 Y8∗ BZX84-C56 Y18 or ∗B8
BZX84-C3V6 Z15 or ∗B2 BZX84-C9V1 Z8∗ BZX84-C24 Y9∗ BZX84-C62 Y19 or ∗B9
BZX84-C3V9 Z16 or ∗B3 BZX84-C10 Z9∗ BZX84-C27 Y10 or ∗T2 BZX84-C68 Y20 or ∗B0
BZX84-C4V3 Z17 or ∗B6 BZX84-C11 Y1∗ BZX84-C30 Y11 or ∗T5 BZX84-C75 Y21 or ∗A1
BZX84-C4V7 Z1∗ BZX84-C12 Y2∗ BZX84-C33 Y12 or ∗T6 − −
BZX84-C5V1 Z2∗ BZX84-C13 Y3∗ BZX84-C36 Y13 or ∗T7 − −
BZX84-C5V6 Z3∗ BZX84-C15 Y4∗ BZX84-C39 Y14 or ∗T8 − −
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
2003 Apr 10 3
Page 4
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX84 series
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZSM
P
tot
P
ZSM
T
stg
T
j
Note
1. Device mounted on an FR4 printed circuit-board.
ELECTRICAL CHARACTERISTICS
continuous forward current − 200 mA
non-repetitive peak reverse current tp = 100 μs; square wave;
T
= 25 °C prior to surge
j
total power dissipation T
non-repetitive peak reverse power
dissipation
= 25 °C; note 1 − 250 mW
amb
tp = 100 μs; square wave;
= 25 °C prior to surge; see Fig.2
T
j
see Tables
1 and 2
− 40 W
storage temperature −65 +150 °C
junction temperature −65 +150 °C
Total BZX84-A and B and C series
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
forward voltage IF = 10 mA; see Fig.3 0.9 V
reverse current
BZX84-A/B/C2V4 VR = 1 V 50 μA
BZX84-A/B/C2V7 VR = 1 V 20 μA
BZX84-A/B/C3V0 VR = 1 V 10 μA
BZX84-A/B/C3V3 VR = 1 V 5 μA
BZX84-A/B/C3V6 VR = 1 V 5 μA
BZX84-A/B/C3V9 VR = 1 V 3 μA
BZX84-A/B/C4V3 VR = 1 V 3 μA
BZX84-A/B/C4V7 VR = 2 V 3 μA
BZX84-A/B/C5V1 VR = 2 V 2 μA
BZX84-A/B/C5V6 VR = 2 V 1 μA
BZX84-A/B/C6V2 VR = 4 V 3 μA
BZX84-A/B/C6V8 VR = 4 V 2 μA
BZX84-A/B/C7V5 VR = 5 V 1 μA
BZX84-A/B/C8V2 VR = 5 V 700 nA
BZX84-A/B/C9V1 VR = 6 V 500 nA
BZX84-A/B/C10 VR = 7 V 200 nA
BZX84-A/B/C11 VR = 8 V 100 nA
BZX84-A/B/C12 VR = 8 V 100 nA
BZX84-A/B/C13 VR = 8 V 100 nA
BZX84-A/B/C15 to 75 VR = 0.7V
Znom
50 nA
2003 Apr 10 4
Page 5
2003 Apr 10 5
Table 1 Per type BZX84-A/B/C2V4 to A/B/C24
Tj = 25 °C unless otherwise specified.
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX84 series
BZX84-
Axxx
Bxxx
Cxxx
WORKING VOLTAGE
V
(V)
Z
I
= 5 mA
at
Ztest
Tol. ±1% (A) Tol. ±2% (B)
Tol. approx.
(C)
±5%
DIFFERENTIAL
RESISTANCE
at
= 1 mA
I
Ztest
TEMP. COEFF.
S
(mV/K)
Z
(Ω)
r
dif
at
I
Ztest
= 5 mA
(see Figs 4 and 5)
at
= 5 mA
I
Ztest
DIODE CAP.
C
(pF)
d
f = 1 MHz;
at
= 0 V
V
R
NON-REPETITIVE
PEAK REVERSE
at t
MIN. MAX. MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX.
2V4 2.37 2.43 2.35 2.45 2.2 2.6 275 600 70 100 −3.5 −1.6 0 450 6.0
2V7 2.67 2.73 2.65 2.75 2.5 2.9 300 600 75 100 −3.5 −2.0 0 450 6.0
3V0 2.97 3.03 2.94 3.06 2.8 3.2 325 600 80 95 −3.5 −2.1 0 450 6.0
3V3 3.26 3.34 3.23 3.37 3.1 3.5 350 600 85 95 −3.5 −2.4 0 450 6.0
3V6 3.56 3.64 3.53 3.67 3.4 3.8 375 600 85 90 −3.5 −2.4 0 450 6.0
3V9 3.86 3.94 3.82 3.98 3.7 4.1 400 600 85 90 −3.5 −2.5 0 450 6.0
4V3 4.25 4.35 4.21 4.39 4.0 4.6 410 600 80 90 −3.5 −2.5 0 450 6.0
4V7 4.65 4.75 4.61 4.79 4.4 5.0 425 500 50 80 −3.5 −1.4 0.2 300 6.0
5V1 5.04 5.16 5.00 5.20 4.8 5.4 400 480 40 60 −2.7 −0.8 1.2 300 6.0
5V6 5.54 5.66 5.49 5.71 5.2 6.0 80 400 15 40 −2.0 1.2 2.5 300 6.0
6V2 6.13 6.27 6.08 6.32 5.8 6.6 40 150 6 10 0.4 2.3 3.7 200 6.0
6V8 6.73 6.87 6.66 6.94 6.4 7.2 30 80 6 15 1.2 3.0 4.5 200 6.0
7V5 7.42 7.58 7.35 7.65 7.0 7.9 30 80 6 15 2.5 4.0 5.3 150 4.0
8V2 8.11 8.29 8.04 8.36 7.7 8.7 40 80 6 15 3.2 4.6 6.2 150 4.0
9V1 9.00 9.20 8.92 9.28 8.5 9.6 40 100 6 15 3.8 5.5 7.0 150 3.0
10 9.90 10.10 9.80 10.20 9.4 10.6 50 150 8 20 4.5 6.4 8.0 90 3.0
11 10.80 11.11 10.80 11.20 10.4 11.6 50 150 10 20 5.4 7.4 9.0 85 2.5
12 11.88 12.12 11.80 12.20 11.4 12.7 50 150 10 25 6.0 8.4 10.0 85 2.5
13 12.87 13.13 12.70 13.30 12.4 14.1 50 170 10 30 7.0 9.4 11.0 80 2.5
15 14.85 15.15 14.70 15.30 13.8 15.6 50 200 10 30 9.2 11.4 13.0 75 2.0
16 15.84 16.16 15.70 16.30 15.3 17.1 50 200 10 40 10.4 12.4 14.0 75 1.5
18 17.82 18.18 17.60 18.40 16.8 19.1 50 225 10 45 12.4 14.4 16.0 70 1.5
20 19.80 20.20 19.60 20.40 18.8 21.2 60 225 15 55 14.4 16.4 18.0 60 1.5
22 21.78 22.22 21.60 22.40 20.8 23.3 60 250 20 55 16.4 18.4 20.0 60 1.25
24 23.76 24.24 23.50 24.50 22.8 25.6 60 250 25 70 18.4 20.4 22.0 55 1.25
CURRENT
(A)
I
ZSM
= 100 μs;
p
= 25 °C
T
amb
Page 6
2003 Apr 10 6
Table 2 Per type BZX84-A/B/C27 to A/B/C75
Tj = 25 °C unless otherwise specified.
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX84 series
BZX84-
Axxx
Bxxx
Cxxx
WORKING VOLTAGE
V
(V)
Z
I
= 2 mA
at
Ztest
Tol. ±1% (A) Tol. ±2% (B)
Tol. approx.
(C)
±5%
DIFFERENTIAL
RESISTANCE
at
= 0.5 mA
I
Ztest
TEMP. COEFF.
S
(mV/K)
Z
(Ω)
r
dif
at
I
Ztest
= 2 mA
(see Figs 4 and 5)
at
= 2 mA
I
Ztest
DIODE CAP.
C
(pF)
d
f = 1 MHz;
at
= 0 V
V
R
NON-REPETITIVE
PEAK REVERSE
at
MIN. MAX. MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX.
27 26.73 27.27 26.50 27.50 25.1 28.9 65 300 25 80 21.4 23.4 25.3 50 1.0
30 29.70 30.30 29.40 30.60 28.0 32.0 70 300 30 80 24.4 26.6 29.4 50 1.0
33 32.67 33.33 32.30 33.70 31.0 35.0 75 325 35 80 27.4 29.7 33.4 45 0.9
36 35.64 36.36 35.30 36.70 34.0 38.0 80 350 35 90 30.4 33.0 37.4 45 0.8
39 38.61 39.39 38.20 39.80 37.0 41.0 80 350 40 130 33.4 36.4 41.2 45 0.7
43 42.57 43.43 42.10 43.90 40.0 46.0 85 375 45 150 37.6 41.2 46.6 40 0.6
47 46.53 47.47 46.10 47.90 44.0 50.0 85 375 50 170 42.0 46.1 51.8 40 0.5
51 50.49 51.51 50.00 52.00 48.0 54.0 90 400 60 180 46.6 51.0 57.2 40 0.4
56 55.44 56.56 54.90 57.10 52.0 60.0 100 425 70 200 52.2 57.0 63.8 40 0.3
62 61.38 62.62 60.80 63.20 58.0 66.0 120 450 80 215 58.8 64.4 71.6 35 0.3
68 67.32 68.68 66.60 69.40 64.0 72.0 150 475 90 240 65.6 71.7 79.8 35 0.25
75 74.25 75.75 73.50 76.50 70.0 79.0 170 500 95 255 73.4 80.2 88.6 35 0.2
CURRENT
(A)
I
ZSM
tp = 100 μs;
= 25 °C
T
amb
Page 7
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX84 series
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
R
th j-a
Note
1. Device mounted on an FR4 printed circuit-board.
thermal resistance from junction to tie-point 330 K/W
thermal resistance from junction to ambient note 1 500 K/W
2003 Apr 10 7
Page 8
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX84 series
GRAPHICAL DATA
3
10
handbook, halfpage
P
ZSM
(W)
2
10
10
1
−1
10
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
(1)
(2)
1 duration (ms)
MBG801
Fig.2 Maximum permissible non-repetitive pea k
reverse power dissipation versus duration.
300
handbook, halfpage
I
F
(mA)
200
100
0
10
0.6 1
Tj = 25 °C.
0.8
MBG781
VF (V)
Fig.3 Forward current as a function of forward
voltage; typical values.
handbook, halfpage
0
S
Z
(mV/K)
−1
−2
−3
060
BZX84-A/B/C2V4 to A/B/C4V3.
= 25 to 150 °C.
T
j
4V3
20 40
MBG783
3V9
3V6
3V3
3V0
2V4
2V7
IZ (mA)
Fig.4 Temperature coefficient as a function of
working current; typical values.
10
handbook, halfpage
S
Z
(mV/K)
5
0
−5
02016
BZX84-A/B/C4V7 to A/B/C12.
= 25 to 150 °C.
T
j
4812
12
11
10
9V1
8V2
7V5
6V8
6V2
5V6
5V1
4V7
MBG782
IZ (mA)
Fig.5 Temperature coefficient as a function of
working current; typical values.
2003 Apr 10 8
Page 9
NXP Semiconductors Product data sheet
3
Voltage regulator diodes BZX84 series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT2
D
3
A
A
1
12
e
1
b
p
e
w M
B
E
H
E
detail X
AB
Q
L
p
X
v M
A
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
1.1
mm
0.9
OUTLINE
VERSION
SOT23 TO-236AB
1
A
max.
0.48
0.1
0.38
cD
b
p
0.15
0.09
IEC JEDEC EIAJ
3.0
2.8
E
1.4
1.2
REFERENCES
1.9
e
e
1
0.95
H
2.5
2.1
L
Qwv
p
E
0.55
0.45
0.15
0.45
0.2
0.1
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
2003 Apr 10 9
Page 10
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX84 series
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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General ⎯ Information in this document is believed to be
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does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .
(1)
PRODUCT
STATUS
(2)
development.
DEFINITION
System of IEC
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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Quick reference data ⎯ The Quick reference data is an
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Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
60134) may cause permanent damage to
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
2003 Apr 10 10
Page 11
NXP Semiconductors
Customer notification
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made to the content, except for the legal definitions and disclaimers.
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this documen t d oes not form part of any quotation or contract, is believe d to be accurate and reliable and may be changed
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under patent- or other industri al or intellectual property rights.
Printed in The Netherlands 613514/03/pp11 Date of release: 2003 Apr 10 Document order number: 9397 750 10959
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