Datasheet BZX84 Datasheet (Philips)

查询BZX84-A10供应商

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D088

BZX84 series

Voltage regulator diodes

Product specification
Supersedes data of 1999 May 18

2003 Apr 10

Philips Semiconductors Product specification

Voltage regulator diodes BZX84 series

FEATURES

• Total power dissipation: max. 250 mW

• Three tolerance series: ±1%, ±2% and approx. ±5%

• Working voltage range: nom. 2.4 to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation:

max. 40 W.

APPLICATIONS

• General regulation functions.

DESCRIPTION

Low-power voltage regulator diodes in small SOT23
plastic SMD packages.

The diodes are available in the normalized E24 ±1%
(BZX84-A), ±2% (BZX84-B) and approx. ±5% (BZX84-C)
tolerance range. The series consists of 37 types with
nominal working voltages from 2.4 to 75 V.

PINNING

PIN DESCRIPTION

1 anode
2 not connected
3 cathode

handbook, halfpage

21

2

n.c.

3

Top view

Fig.1 Simplified outline (SOT23) and symbol.

1

3

MAM243

2003 Apr 10 2

Philips Semiconductors Product specification

Voltage regulator diodes BZX84 series

MARKING

TYPE

NUMBER

MARKING

(1)

CODE

TYPE

NUMBER

MARKING

(1)

CODE

TYPE

NUMBER

MARKING

(1)

CODE

TYPE

NUMBER

MARKING

(1)

CODE

Marking codes for BZX84-A2V4 to BZX84-A75

BZX84-A2V4 Y50 or ∗50 BZX84-A6V2 Y60 or ∗60 BZX84-A16 Y70 BZX84-A43 Y80 or ∗C5
BZX84-A2V7 Y51 or ∗51 BZX84-A6V8 Y61 or ∗61 BZX84-A18 Y71 BZX84-A47 Y81
BZX84-A3V0 Y52 or ∗52 BZX84-A7V5 Y62 or ∗62 BZX84-A20 Y72 or ∗C2 BZX84-A51 Y82 or ∗C6
BZX84-A3V3 Y53 BZX84-A8V2 Y63 or ∗63 BZX84-A22 Y73 BZX84-A56 Y83
BZX84-A3V6 Y54 or ∗C1 BZX84-A9V1 Y64 or ∗64 BZX84-A24 Y74 BZX84-A62 Y84
BZX84-A3V9 Y55 or ∗55 BZX84-A10 Y65 or ∗65 BZX84-A27 Y75 or ∗75 BZX84-A68 Y85
BZX84-A4V3 Y56 or ∗56 BZX84-A11 Y66 or ∗04 BZX84-A30 Y76 BZX84-A75 Y86 or ∗86
BZX84-A4V7 Y57 or ∗57 BZX84-A12 Y67 or ∗67 BZX84-A33 Y77 −−
BZX84-A5V1 Y58 or ∗58 BZX84-A13 Y68 or ∗C0 BZX84-A36 Y78 or ∗C3 −−
BZX84-A5V6 Y59 or ∗59 BZX84-A15 Y69 or ∗69 BZX84-A39 Y79 or ∗C4 −−

Marking codes for BZX84-B2V4 to BZX84-B75

BZX84-B2V4 Z50 or ∗Z0 BZX84-B6V2 Z60 or ∗R5 BZX84-B16 Z70 or ∗70 BZX84-B43 Z80 or ∗S5
BZX84-B2V7 Z51 or ∗Z1 BZX84-B6V8 Z61 or ∗R6 BZX84-B18 Z71 or ∗71 BZX84-B47 Z81 or ∗S6
BZX84-B3V0 Z52 or ∗S1 BZX84-B7V5 Z62 or ∗R8 BZX84-B20 Z72 or ∗72 BZX84-B51 Z82 or ∗S9
BZX84-B3V3 Z53 or ∗S2 BZX84-B8V2 Z63 or ∗R9 BZX84-B22 Z73 or ∗73 BZX84-B56 Z83 or ∗R0
BZX84-B3V6 Z54 or ∗S3 BZX84-B9V1 Z64 or ∗T1 BZX84-B24 Z74 or ∗74 BZX84-B62 Z84 or ∗R3
BZX84-B3V9 Z55 or ∗S4 BZX84-B10 Z65 or ∗66 BZX84-B27 Z75 or ∗Z5 BZX84-B68 Z85 or ∗R4
BZX84-B4V3 Z56 or ∗S7 BZX84-B11 Z66 or ∗Z6 BZX84-B30 Z76 or ∗Z4 BZX84-B75 Z86 or ∗R7
BZX84-B4V7 Z57 or ∗S8 BZX84-B12 Z67 or ∗Z7 BZX84-B33 Z77 or ∗Y1 −−
BZX84-B5V1 Z58 or ∗R1 BZX84-B13 Z68 or ∗Z8 BZX84-B36 Z78 or ∗Y2 −−
BZX84-B5V6 Z59 or ∗R2 BZX84-B15 Z69 or ∗Z9 BZX84-B39 Z79 or ∗S0 −−

Marking codes for BZX84-C2V4 to BZX84-C75

BZX84-C2V4 Z11 or ∗T3 BZX84-C6V2 Z4∗ BZX84-C16 Y5∗ BZX84-C43 Y15 or ∗B4
BZX84-C2V7 Z12 or ∗T4 BZX84-C6V8 Z5∗ BZX84-C18 Y6∗ BZX84-C47 Y16 or ∗B5
BZX84-C3V0 Z13 or ∗T9 BZX84-C7V5 Z6∗ BZX84-C20 Y7∗ BZX84-C51 Y17 or ∗B7
BZX84-C3V3 Z14 or ∗B1 BZX84-C8V2 Z7∗ BZX84-C22 Y8∗ BZX84-C56 Y18 or ∗B8
BZX84-C3V6 Z15 or ∗B2 BZX84-C9V1 Z8∗ BZX84-C24 Y9∗ BZX84-C62 Y19 or ∗B9
BZX84-C3V9 Z16 or ∗B3 BZX84-C10 Z9∗ BZX84-C27 Y10 or ∗T2 BZX84-C68 Y20 or ∗B0
BZX84-C4V3 Z17 or ∗B6 BZX84-C11 Y1∗ BZX84-C30 Y11 or ∗T5 BZX84-C75 Y21 or ∗A1
BZX84-C4V7 Z1∗ BZX84-C12 Y2∗ BZX84-C33 Y12 or ∗T6 −−
BZX84-C5V1 Z2∗ BZX84-C13 Y3∗ BZX84-C36 Y13 or ∗T7 −−
BZX84-C5V6 Z3∗ BZX84-C15 Y4∗ BZX84-C39 Y14 or ∗T8 −−

Note

1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.

2003 Apr 10 3

Philips Semiconductors Product specification

Voltage regulator diodes BZX84 series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

F

I

ZSM

P

tot

P

ZSM

T

stg

T

j

Note

1. Device mounted on an FR4 printed circuit-board.

ELECTRICAL CHARACTERISTICS

continuous forward current − 200 mA
non-repetitive peak reverse current tp= 100 µs; square wave;

Tj=25°C prior to surge
total power dissipation T
non-repetitive peak reverse power

dissipation

=25°C; note 1 − 250 mW

amb

tp= 100 µs; square wave;

Tj=25°C prior to surge; see Fig.2

see Tables
1 and 2

− 40 W

storage temperature −65 +150 °C
junction temperature −65 +150 °C

Total BZX84-A and B and C series

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V

F

I

R

forward voltage IF= 10 mA; see Fig.3 0.9 V
reverse current

BZX84-A/B/C2V4 V
BZX84-A/B/C2V7 V
BZX84-A/B/C3V0 V
BZX84-A/B/C3V3 V
BZX84-A/B/C3V6 V
BZX84-A/B/C3V9 V
BZX84-A/B/C4V3 V
BZX84-A/B/C4V7 V
BZX84-A/B/C5V1 V
BZX84-A/B/C5V6 V
BZX84-A/B/C6V2 V
BZX84-A/B/C6V8 V
BZX84-A/B/C7V5 V
BZX84-A/B/C8V2 V
BZX84-A/B/C9V1 V
BZX84-A/B/C10 V
BZX84-A/B/C11 V
BZX84-A/B/C12 V
BZX84-A/B/C13 V
BZX84-A/B/C15 to 75 V

=1V 50 µA

R

=1V 20 µA

R

=1V 10 µA

R

=1V 5 µA

R

=1V 5 µA

R

=1V 3 µA

R

=1V 3 µA

R

=2V 3 µA

R

=2V 2 µA

R

=2V 1 µA

R

=4V 3 µA

R

=4V 2 µA

R

=5V 1 µA

R

= 5 V 700 nA

R

= 6 V 500 nA

R

= 7 V 200 nA

R

= 8 V 100 nA

R

= 8 V 100 nA

R

= 8 V 100 nA

R

= 0.7V

R

Znom

50 nA

2003 Apr 10 4

Philips Semiconductors Product specification

Voltage regulator diodes BZX84 series

(A)

=25°C

= 100 µs;

ZSM

p

I

at t

=0V

R

V

(see Figs 4 and 5)

amb

T

CURRENT

PEAK REVERSE

NON-REPETITIVE

(pF)

d

C

DIODE CAP.

at f = 1 MHz;

=5mA

(mV/K)

Z

Ztest

S

TEMP. COEFF.

at I

at

=5mA

Ztest

at

I

=1mA

Ztest

I

(Ω)

dif

r

RESISTANCE

DIFFERENTIAL

±5% (C)

Tol. approx.

=5mA

(V)

Z

V

Ztest

at I

WORKING VOLTAGE

=25°C unless otherwise specified.

j

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T

Table 1 Per type BZX84-A/B/C2V4 to A/B/C24

2003 Apr 10 5

Axxx

Bxxx

BZX84-

Tol. ±1% (A) Tol. ±2% (B)

Cxxx

MIN. MAX. MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX.

2V4 2.37 2.43 2.35 2.45 2.2 2.6 275 600 70 100 −3.5 −1.6 0 450 6.0

2V7 2.67 2.73 2.65 2.75 2.5 2.9 300 600 75 100 −3.5 −2.0 0 450 6.0

3V0 2.97 3.03 2.94 3.06 2.8 3.2 325 600 80 95 −3.5 −2.1 0 450 6.0

3V3 3.26 3.34 3.23 3.37 3.1 3.5 350 600 85 95 −3.5 −2.4 0 450 6.0

3V6 3.56 3.64 3.53 3.67 3.4 3.8 375 600 85 90 −3.5 −2.4 0 450 6.0

3V9 3.86 3.94 3.82 3.98 3.7 4.1 400 600 85 90 −3.5 −2.5 0 450 6.0

4V3 4.25 4.35 4.21 4.39 4.0 4.6 410 600 80 90 −3.5 −2.5 0 450 6.0

4V7 4.65 4.75 4.61 4.79 4.4 5.0 425 500 50 80 −3.5 −1.4 0.2 300 6.0

5V1 5.04 5.16 5.00 5.20 4.8 5.4 400 480 40 60 −2.7 −0.8 1.2 300 6.0

5V6 5.54 5.66 5.49 5.71 5.2 6.0 80 400 15 40 −2.0 1.2 2.5 300 6.0

6V2 6.13 6.27 6.08 6.32 5.8 6.6 40 150 6 10 0.4 2.3 3.7 200 6.0

6V8 6.73 6.87 6.66 6.94 6.4 7.2 30 80 6 15 1.2 3.0 4.5 200 6.0

7V5 7.42 7.58 7.35 7.65 7.0 7.9 30 80 6 15 2.5 4.0 5.3 150 4.0

8V2 8.11 8.29 8.04 8.36 7.7 8.7 40 80 6 15 3.2 4.6 6.2 150 4.0

9V1 9.00 9.20 8.92 9.28 8.5 9.6 40 100 6 15 3.8 5.5 7.0 150 3.0

10 9.90 10.10 9.80 10.20 9.4 10.6 50 150 8 20 4.5 6.4 8.0 90 3.0

11 10.80 11.11 10.80 11.20 10.4 11.6 50 150 10 20 5.4 7.4 9.0 85 2.5

12 11.88 12.12 11.80 12.20 11.4 12.7 50 150 10 25 6.0 8.4 10.0 85 2.5

13 12.87 13.13 12.70 13.30 12.4 14.1 50 170 10 30 7.0 9.4 11.0 80 2.5

15 14.85 15.15 14.70 15.30 13.8 15.6 50 200 10 30 9.2 11.4 13.0 75 2.0

16 15.84 16.16 15.70 16.30 15.3 17.1 50 200 10 40 10.4 12.4 14.0 75 1.5

18 17.82 18.18 17.60 18.40 16.8 19.1 50 225 10 45 12.4 14.4 16.0 70 1.5

20 19.80 20.20 19.60 20.40 18.8 21.2 60 225 15 55 14.4 16.4 18.0 60 1.5

22 21.78 22.22 21.60 22.40 20.8 23.3 60 250 20 55 16.4 18.4 20.0 60 1.25

24 23.76 24.24 23.50 24.50 22.8 25.6 60 250 25 70 18.4 20.4 22.0 55 1.25

Philips Semiconductors Product specification

Voltage regulator diodes BZX84 series

(A)

=25°C

= 100 µs;

ZSM

p

I

at t

=0V

R

V

(see Figs 4 and 5)

amb

T

CURRENT

PEAK REVERSE

NON-REPETITIVE

(pF)

d

C

DIODE CAP.

at f = 1 MHz;

=2mA

(mV/K)

Z

Ztest

S

TEMP. COEFF.

at I

at

=2mA

Ztest

at

I

= 0.5 mA

Ztest

I

(Ω)

dif

r

RESISTANCE

DIFFERENTIAL

±5% (C)

Tol. approx.

=2mA

(V)

Z

V

Ztest

at I

WORKING VOLTAGE

=25°C unless otherwise specified.

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j

Table 2 Per type BZX84-A/B/C27 to A/B/C75

T

2003 Apr 10 6

Axxx

Bxxx

BZX84-

Tol. ±1% (A) Tol. ±2% (B)

Cxxx

MIN. MAX. MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX.

27 26.73 27.27 26.50 27.50 25.1 28.9 65 300 25 80 21.4 23.4 25.3 50 1.0

30 29.70 30.30 29.40 30.60 28.0 32.0 70 300 30 80 24.4 26.6 29.4 50 1.0

33 32.67 33.33 32.30 33.70 31.0 35.0 75 325 35 80 27.4 29.7 33.4 45 0.9

36 35.64 36.36 35.30 36.70 34.0 38.0 80 350 35 90 30.4 33.0 37.4 45 0.8

39 38.61 39.39 38.20 39.80 37.0 41.0 80 350 40 130 33.4 36.4 41.2 45 0.7

43 42.57 43.43 42.10 43.90 40.0 46.0 85 375 45 150 37.6 41.2 46.6 40 0.6

47 46.53 47.47 46.10 47.90 44.0 50.0 85 375 50 170 42.0 46.1 51.8 40 0.5

51 50.49 51.51 50.00 52.00 48.0 54.0 90 400 60 180 46.6 51.0 57.2 40 0.4

56 55.44 56.56 54.90 57.10 52.0 60.0 100 425 70 200 52.2 57.0 63.8 40 0.3

62 61.38 62.62 60.80 63.20 58.0 66.0 120 450 80 215 58.8 64.4 71.6 35 0.3

68 67.32 68.68 66.60 69.40 64.0 72.0 150 475 90 240 65.6 71.7 79.8 35 0.25

75 74.25 75.75 73.50 76.50 70.0 79.0 170 500 95 255 73.4 80.2 88.6 35 0.2

Philips Semiconductors Product specification

Voltage regulator diodes BZX84 series

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-tp

R

th j-a

Note

1. Device mounted on an FR4 printed circuit-board.

thermal resistance from junction to tie-point 330 K/W
thermal resistance from junction to ambient note 1 500 K/W

2003 Apr 10 7

Philips Semiconductors Product specification

Voltage regulator diodes BZX84 series

GRAPHICAL DATA

3

10

handbook, halfpage

P

ZSM
(W)

2

10

10

1

−1

10

(1) Tj=25°C (prior to surge).
(2) Tj= 150 °C (prior to surge).

(1)

(2)

1 duration (ms)

MBG801

Fig.2 Maximum permissible non-repetitive peak

reverse power dissipation versus duration.

300

handbook, halfpage

I

F

(mA)

200

100

0

10

0.6 1

Tj=25°C.

0.8

MBG781

VF (V)

Fig.3 Forward current as a function of forward

voltage; typical values.

handbook, halfpage

0

S

Z

(mV/K)

−1

−2

−3

060

BZX84-A/B/C2V4 to A/B/C4V3.

=25to150°C.

T

j

20 40

4V3

MBG783

3V9

3V6

3V3

2V4
2V7

IZ (mA)

Fig.4 Temperature coefficient as a function of

working current; typical values.

3V0

10

handbook, halfpage

S

Z

(mV/K)

5

0

−5
02016

BZX84-A/B/C4V7 to A/B/C12.

=25to150°C.

T

j

4812

12
11

10
9V1
8V2

7V5
6V8

6V2
5V6
5V1

4V7

MBG782

I

(mA)

Z

Fig.5 Temperature coefficient as a function of

working current; typical values.

2003 Apr 10 8

Philips Semiconductors Product specification

Voltage regulator diodes BZX84 series

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT23

D

3

A

A

1

12

e

1

b

p

e

w M

B

E

H

E

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

UNIT

A

1.1

mm

0.9

OUTLINE
VERSION

SOT23 TO-236AB

max.

0.1

b

cD

p

0.48

0.15

0.38

0.09

IEC JEDEC EIAJ

3.0

2.8

E

1.4

1.2

REFERENCES

1.9

e

e

0.95

1

2003 Apr 10 9

H

2.5

2.1

L

Qwv

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28
99-09-13

Philips Semiconductors Product specification

Voltage regulator diodes BZX84 series

DATA SHEET STATUS

LEVEL

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

I Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DEFINITIONS

DISCLAIMERS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabove those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythat such applications willbe
suitable for the specified use without further testing or
modification.

Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorselling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Apr 10 10

Philips Semiconductors Product specification

Voltage regulator diodes BZX84 series

NOTES

2003 Apr 10 11

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [email protected].

© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of anyquotationor contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613514/03/pp12 Date of release: 2003 Apr 10 Document order number: 9397 750 10959

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