Datasheet BZX585-B10, BZX585-B11, BZX585-B12, BZX585-B13, BZX585-B15 Datasheet (NXP) [ru]

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DATA SH EET

DISCRETE SEMICONDUCTORS

M3D319

BZX585 series

Voltage regulator diodes

Product data sheet Supersedes data of 2004 Mar 26

2004 Jun 22

Page 2

NXP Semiconductors Product data sheet

Top view

Voltage regulator diodes BZX585 series

FEATURES

• Total power dissipation: max. 300 mW

• Two tolerance series: ± 2 % and ± 5 %

• Working voltage range: nominal 2.4 V to 75 V

(E24

range)

• Non-repetitive peak reverse power dis sip ation: max. W.

APPLICATIONS

• General regulation functions.

DESCRIPTION

Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic

SMD package.

The diodes are available in the normalized E24 ± 2 % (BZX585-B) and

± 5 % (BZX585-C) tolerance range.

The series consists of 37 types with nominal working voltages from 2.4

V to 75 V.

MARKING

PINNING

PIN DESCRIPTION

1 cathode 2 anode

handbook, halfpage

The marking bar indicates the cathode.

MAM387

Fig.1 Simplified outline (SOD523) and symbol.

TYPE

NUMBER

MARKING

CODE

TYPE

NUMBER

MARKING

CODE

TYPE

NUMBER

MARKING

CODE

TYPE

NUMBER

MARKING

CODE

Marking codes for BZX585-B2V4 to BZX585-B75

BZX585-B2V4 C1 BZX585-B6V2 E1 BZX585-B16 EA BZX585-B43 EM BZX585-B2V7 C2 BZX585-B6V8 E2 BZX585-B18 EB BZX585-B47 EN BZX585-B3V0 C3 BZX585-B7V5 E3 BZX585-B20 EC BZX585-B51 EP BZX585-B3V3 C4 BZX585-B8V2 E4 BZX585-B22 ED BZX585-B56 ER BZX585-B3V6 C5 BZX585-B9V1 E5 BZX585-B24 EE BZX585-B62 ES BZX585-B3V9 C6 BZX585-B10 E6 BZX585-B27 EF BZX585-B68 ET BZX585-B4V3 C7 BZX585-B11 E7 BZX585-B30 EG BZX585-B75 EU BZX585-B4V7 C8 BZX585-B12 E8 BZX585-B33 EH BZX585-B5V1 C9 BZX585-B13 E9 BZX585-B36 EK BZX585-B5V6 C0 BZX585-B15 E0 BZX585-B39 EL

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NXP Semiconductors Product data sheet

Voltage regulator diodes BZX585 series

TYPE

NUMBER

MARKING

CODE

TYPE

NUMBER

MARKING

CODE

TYPE

NUMBER

MARKING

CODE

TYPE

NUMBER

MARKING

CODE

Marking codes for BZX585-C2V4 to BZX585-C75

BZX585-C2V4 F1 BZX585-C6V2 H1 BZX585-C16 HA BZX585-C43 HM BZX585-C2V7 F2 BZX585-C6V8 H2 BZX585-C18 HB BZX585-C47 HN BZX585-C3V0 F3 BZX585-C7V5 H3 BZX585-C20 HC BZX585-C51 HP BZX585-C3V3 F4 BZX585-C8V2 H4 BZX585-C22 HD BZX585-C56 HR BZX585-C3V6 F5 BZX585-C9V1 H5 BZX585-C24 HE BZX585-C62 HS BZX585-C3V9 F6 BZX585-C10 H6 BZX585-C27 HF BZX585-C68 HT BZX585-C4V3 F7 BZX585-C11 H7 BZX585-C30 HG BZX585-C75 HU BZX585-C4V7 F8 BZX585-C12 H8 BZX585-C33 HH BZX585-C5V1 F9 BZX585-C13 H9 BZX585-C36 HK BZX585-C5V6 F0 BZX585-C15 H0 BZX585-C39 HL

ORDERING INFORMATION

TYPE

NUMBER

BZX585-B2V4

NAME DESCRIPTION VERSION

− Plastic surface mounted packag e; 2 leads SOD523

PACKAGE

to BZX585-B75

BZX585-C2V4

− Plastic surface mounted packag e; 2 leads SOD523 to BZX585-C75

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ZSM

P T T

ZSM

tot stg j

continuous forward current − 200 mA non-repetitive peak reverse

current non-repetitive peak reverse

power dissipation total power dissipation T storage temperature

tp = 100 μs; square wave; T

= 25 °C prior to surge

amb

tp = 100 μs; square wave;

= 25 °C prior to surge

amb

= 25 °C; note 1 − 300 mW

amb

see Tables 1 and 2

− 40 W

−

+150

junction temperature −65 +150 °C

Note

1. Device mounted on an FR4 printed-circuit board with approxima t ely 35 mm2 Cu area at cathode tab.

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NXP Semiconductors Product data sheet

Voltage regulator diodes BZX585 series

ELECTRICAL CHARACTERISTICS Total BZX585-B and C series

= 25 °C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MAX. UNIT

forward voltage IF = 10 mA; see Fig.2 0.9 V

IF = 100 mA; see Fig.2 1.1 V

reverse current

BZX585-B/C2V4 VR = 1 V 50 μA BZX585-B/C2V7 VR = 1 V 20 μA BZX585-B/C3V0 VR = 1 V 10 μA BZX585-B/C3V3 VR = 1 V 5 μA BZX585-B/C3V6 VR = 1 V 5 μA BZX585-B/C3V9 VR = 1 V 3 μA BZX585-B/C4V3 VR = 1 V 3 μA BZX585-B/C4V7 VR = 2 V 3 μA BZX585-B/C5V1 VR = 2 V 2 μA BZX585-B/C5V6 VR = 2 V 1 μA BZX585-B/C6V2 VR = 4 V 3 μA BZX585-B/C6V8 VR = 4 V 2 μA BZX585-B/C7V5 VR = 5 V 1 μA BZX585-B/C8V2 VR = 5 V 700 nA BZX585-B/C9V1 VR = 6 V 500 nA BZX585-B/C10 VR = 7 V 200 nA BZX585-B/C11 VR = 8 V 100 nA BZX585-B/C12 VR = 8 V 100 nA BZX585-B/C13 VR = 8 V 100 nA BZX585-B/C15 to 75 VR = 0.7V

Znom

50 nA

2004 Jun 22 4

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2004 Jun 22 5

Table 1 Per type BZX585-B/C2V4 to B/C24 T

= 25 °C unless otherwise specified.

amb

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX585 series

BZX585-

or C

XXX

WORKING VOLTAGE

(V)

at I

Ztest

= 5 mA

Tol. ± 2% (B) Tol. ± 5% (C) at I

DIFFERENTIAL RESISTANCE

(Ω)

dif

= 1 mA at I

Ztest

= 5 mA

TEMP. COEFF.

(mV/K)

Ztest

= 5 mA

(see figs 3 AND 4)

DIODE CAP.

(pF)

= 1 MHz;

at f

= 0 V

NON-REPETITIVE PEAK

REVERSE CURRENT I

MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. TYP. MAX. MAX.

2V4 2.35 2.45 2.28 2.52 275 400 70 100 −1.3 450 6.0 2V7 2.65 2.75 2.57 2.84 300 450 75 100 −1.4 440 6.0 3V0 2.94 3.06 2.85 3.15 325 500 80 95 −1.6 425 6.0 3V3 3.23 3.37 3.14 3.47 350 500 85 95 −1.8 410 6.0 3V6 3.53 3.67 3.42 3.78 375 500 85 90 −1.9 390 6.0 3V9 3.82 3.98 3.71 4.10 400 500 85 90 −1.9 370 6.0 4V3 4.21 4.39 4.09 4.52 410 600 80 90 −1.7 350 6.0 4V7 4.61 4.79 4.47 4.94 425 500 50 80 −1.2 325 6.0 5V1 5.00 5.20 4.85 5.36 400 480 40 60 −0.5 300 6.0 5V6 5.49 5.71 5.32 5.88 80 400 15 40 1.0 275 6.0 6V2 6.08 6.32 5.89 6.51 40 150 6 10 2.2 250 6.0 6V8 6.66 6.94 6.46 7.14 30 80 6 15 3.0 215 6.0 7V5 7.35 7.65 7.13 7.88 15 80 2 10 3.6 170 4.0 8V2 8.04 8.36 7.79 8.61 20 80 2 10 4.3 150 4.0 9V1 8.92 9.28 8.65 9.56 20 100 2 10 5.2 120 3.0 10 9.80 10.20 9.50 10.50 20 150 2 10 6.0 110 3.0 11 10.78 11.22 10.45 11.55 25 150 2 10 6.9 110 2.5 12 11.76 12.24 11.40 12.60 25 150 2 10 7.9 105 2.5 13 12.74 13.26 12.35 13.65 25 170 2 10 8.8 105 2.5 15 14.70 15.30 14.25 15.75 25 200 3 15 10.7 100 2.0 16 15.68 16.32 15.20 16.80 50 200 10 40 12.4 90 1.5 18 17.64 18.36 17.10 18.90 50 225 10 45 14.4 80 1.5 20 19.60 20.40 19.00 21.00 60 225 15 55 16.4 70 1.5 22 21.56 22.44 20.90 23.10 60 250 20 55 18.4 60 1.25 24 23.52 24.48 22.80 25.20 60 250 25 70 20.4 55 1.25

(A) at tp = 100 μs

ZSM

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2004 Jun 22 6

Table 2 Per type BZX585-B/C27 to B/C75 T

= 25 °C unless otherwise specified.

amb

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX585 series

BZX585-

or C

XXX

WORKING VOLTAGE

(V)

at I

Ztest

= 2 mA

Tol. ± 2 % (B) Tol. ± 5 % (C) at I

DIFFERENTIAL RESISTANCE

(Ω)

dif

= 0.5 mA at I

Ztest

= 2 mA

TEMP. COEFF.

(mV/K)

Ztest

= 2 mA

(see figs 3 and 4)

DIODE CAP.

(pF)

= 1 MHz;

at f

= 0 V

NON-REPETITIVE

PEAK REVERSE

CURRENT

(A) at tp = 100 μs

ZSM

MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. TYP. MAX. MAX.

27 26.46 27.54 25.65 28.35 65 300 25 80 23.4 50 1.0 30 29.40 30.60 28.50 31.50 70 300 30 80 26.6 50 1.0 33 32.34 33.66 31.35 34.65 75 325 35 80 29.7 45 0.9 36 35.28 36.72 34.20 37.80 80 350 35 90 33.0 45 0.8 39 38.22 39.78 37.05 40.95 80 350 40 130 36.4 45 0.7 43 42.14 43.86 40.85 45.15 85 375 45 150 41.2 40 0.6 47 46.06 47.94 44.65 49.35 85 375 50 170 46.1 40 0.5 51 49.98 52.02 48.45 53.55 90 400 60 180 51.0 40 0.4 56 54.88 57.12 53.20 58.80 100 425 70 200 57.0 40 0.3 62 60.76 63.24 58.90 65.10 120 450 80 215 64.4 35 0.3 68 66.64 69.36 64.60 71.40 150 475 90 240 71.7 35 0.25 75 73.50 76.50 71.25 78.75 170 500 95 255 80.2 35 0.2

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R R

th(j-a) th(j-s)

thermal resistance from junction to ambient note 1 350 K/W thermal resistance from junction to solder point note 2 65 K/W

Notes

1. Device mounted on a FR4 printed-circuit board with approximately 35 mm2 Cu area at cathode tab.

2. Solder point at cathode tab.

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NXP Semiconductors Product data sheet

Voltage regulator diodes BZX585 series

GRAPHICAL DATA

300

handbook, halfpage

(mA)

200

100

0.6 1

= 25 °C.

amb

0.8

MBG781

VF (V)

Fig.2 Forward current as a function of forward

voltage; typical values.

0.5

handbook, halfpage

(mV/K)

−0.5 2V4

−1

−1.5

−2

−1

BZX585-B/C2V4 to B/C4V7.

= 25 °C to 150 °C.

amb

2V7

MLD444

4V7

4V3

3V9

3V6

3V3

IZ (mA)

Fig.3 Temperature coefficient as a function of

working current; typical values.

3V0

13 12

11 10

9V1

8V2 7V5 6V8 6V2

IZ (mA)

MLD445

5V6 5V1

handbook, halfpage

(mV/K)

−4

−1

BZX585-B/C5V1 to B/C15.

= 25 °C to 150 °C.

amb

110

Fig.4 Temperature coefficient as a function of

working current; typical values.

2004 Jun 22 7

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NXP Semiconductors Product data sheet

Voltage regulator diodes BZX585 series

PACKAGE OUTLINE

lastic surface-mounted package; 2 leads SOD52

(1)

OUTLINE VERSION

SOD523 SC-79

IEC JEDEC JEITA

REFERENCES

0 0.5 1 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT b

Note

1. The marking bar indicates the cathode.

0.65

0.58

0.34

0.26

0.17

1.25

0.11

1.15

EUROPEAN

PROJECTION

0.85

0.75

1.65

1.55

ISSUE DATE

02-12-13 06-03-16

0.1

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NXP Semiconductors Product data sheet

Voltage regulator diodes BZX585 series

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective spe cifica t ion for product

Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) desc ribed in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at

http://www.nxp.com.

URL

DISCLAIMERS General ⎯ Information in this document is believed to be

accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be su itable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modificati on .

(1)

PRODUCT STATUS

(2)

DEFINITION

development.

above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.

No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveya nce or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC the device. Limiting values are stress ratings only an d operation of the device at these or any other conditions

2004 Jun 22 9

60134) may cause permanent damage to

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NXP Semiconductors

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version.

Contact information

For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com

The information presented in this documen t d oes not form part of any quotation or contract, is believe d t o b e a ccur ate a nd re li a ble and may be chan ged without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industri al or intellectual property rights.

Printed in The Netherlands R76/04/pp10 Date of release: 2004 Jun 22 Document order number : 9397 750 13303

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