Page 1
CE BZX55-C0V8 THRU BZX55-C200
CHENYI ELECTRONICS 0.5W SILICON PLANAR ZENER DIODES
FEATURES
. The zener voltage are graded according to the international E24
standard .Other voltage tolerance and higher zener voltage
on request.
MECHANICAL DATA
. Case: DO-35 glass case
. Polarity: Color band denotes cathode end
. Weight: Approx. 0.13gram
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)(TA=25 )
Symbols Units
Zener current see table "Characteristics"
Power dissipation at T
Junction temperature T
Storage temperature range TSTG
1)Valid provided that at a distance of 8mm from case are kept at ambient temperature
A=50 Ptot mW
J
ELECTRICAL CHARACTERISTICS(TA=25 )
Symbols Min. Typ. Max. Units
Thermal resistance junction to ambient R
Forward voltage at I
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature
F=100mA VF 1 V
JA 3001) K/W
Value
1)
500
175
-65 to + 175
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 4
Page 2
CE BZX55-C0V8 THRU BZX55-C200
CHENYI ELECTRONICS 0.5W SILICON PLANAR ZENER DIODES
BXZ55... SILICON PLANAR ZENER DIODES
Type
VZNOM TKVZ
V mA V mA A A V %/K
BZX 55/C 0V8 3) 0.8
BZX 55/C 2V0 2.0
BZX 55/C 2V4 2.4
BZX 55/C 2V7 2.7
BZX 55/C 3V0 3
BZX 55/C 3V3 3.3
BZX 55/C 3V6 3.6
BZX 55/C 3V9 3.9
BZX 55/C 4V3 4.3
BZX 55/C 4V7 4.7
BZX 55/C 5V1 5.1
BZX 55/C 5V6 5.6
BZX 55/C 6V2 6.2
BZX 55/C 6V8 6.8
BZX 55/C 7V5 7.5
BZX 55/C 8V2 8.2
BZX 55/C 9V1 9.1
BZX 55/C 10 10
BZX 55/C 11 11
BZX 55/C 12 12
BZX 55/C 13 13
BZX 55/C 15 15
BZX 55/C 16 16
BZX 55/C 18 18
BZX 55/C 20 20
Zener Voltage Range1)
IZT for VZT 2)
0.73…0.83 <8
2.28…2.56 <50 <100
5 1
9.4…10.6
10.4…11.6
11.4…12.7
12.4…14.1
13.8…15.6
15.3…17.1
16.8…19.1
18.8…21.2
Dynamic resistance Reverse leakage current
rzjt and rzjk at Izk
<50
1.9…2.1 <100 <200
2.5…2.9 <10 <50
2.8…3.2 <4
3.1…3.5
3.4…3.8
3.7…4.1
4.0…4.6
4.4…5.0
4.8…5.4
5.2…6.0
5.8…6.6
6.4…7.2
7.0…7.9
7.7…8.7
8.5…9.6
<85
<600
<75
<60
<35 <550 -0.02…+0.02
<25 <450 -0.05…+0.05
<10 <200
<8 <150
<7
<7
<10
<15
<20
<20
<26
<30
<40
<50
<55
<50
<70 7.5
<70 8.2
<90 9.1
<110 10.0
<110 11.0
<170 12
<170 13
<220 15
IR and IR 2) at VR
- - -
<2
<1 <20
<0.5 <10
<0.1 <2
<40
<1
2.0
3.0
5.0
6.2
6.8
Temp coefficient
of zener voltage
-0.26...-0.23
-0.09…-0.06
-0.08…-0.05
-0.06…-0.03
-0.05…+0.02
0.03…0.06
0.03…0.07
0.03…0.07
0.03…0.08
0.03…0.09
0.03…0.1
0.03…0.11
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 2 of 4
Page 3
CE BZX55-C0V8 THRU BZX55-C200
CHENYI ELECTRONICS 0.5W SILICON PLANAR ZENER DIODES
BXZ55... SILICON PLANAR ZENER DIODES
BZX 55/C 22 22
BZX 55/C 24 24
BZX 55/C 27 27
BZX 55/C 30
BZX 55/C 33
BZX 55/C 36
BZX 55/C 39 39
BZX 55/C 43 43
BZX 55/C 47 47
BZX 55/C 51 51
BZX 55/C 56 56
BZX 55/C 62 62
BZX 55/C 68 68
BZX 55/C 75 75
BZX 55/C 82 82
BZX 55/C 91 91
BZX 55/C 100 100
BZX 55/C 110 110
BZX 55/C 120 120
BZX 55/C 130 130
BZX 55/C 150 150
BZX 55/C 160 160
BZX 55/C 180 180
BZX 55/C 200 200
1)Tested with pulses tp=20ms
2)Valid provided that leads are kept at ambient temperature at a distance of 8mm from case
3)The BZX55-C0V8 is silicon diode with operation in forward direction. Hence, the index of all parameters should be 'F' instead of 'Z'. Connect the cathode
lead to the negative pole.
30
33
36 34…38 27
5
2.5
1
20.8…23.3
22.8…25.6
25.1…28.9 20
28…32
31…35 24
37…41 <500 30
40…46 <500 33
44…50 <600 36
48….54 <700 39
52…60 <700 43
58…66 47
64…72 51
70…79 56
77…87 <1500 0.25 62
85…96 <2000 68
94…106 <5000 75
104…116 <5000 82
114…127 <5500 91
124…141 <6000 100
138…156 <6500 110
153…171 <7000 120
168…191 <8500 130
188…212 <10000 150
<55
<80
<80
<220 1
<1000
<2
<5
0.5
<0.1
<10
0.1
16
18
22
0.04…0.12
0.05…0.12
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 3 of 4
Page 4
CE BZX55-C0V8 THRU BZX55-C200
CHENYI ELECTRONICS 0.5W SILICON PLANAR ZENER DIODES
BXZ55... SILICON PLANAR ZENER DIODES
BREAKDOWN CHARACTERISTICS AT TJ=CONSTANT(PULSED)
BREAKDOWN CHARACTERISTICS AT TJ=CONSTANT(PULSED)
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 4 of 4
Loading...