Datasheet BZX55B43, BZX55B3V9, BZX55B3V6, BZX55B3V3, BZX55B3V0 Datasheet (Vishay Telefunken)

Silicon Epitaxial Planar Z–Diodes

Features

D

Very sharp reverse characteristic

D

Low reverse current level

D

Low noise

D

Very high stability

D

Available with tighter tolerances

–tolerance ± 2%

D

V

Z

BZX55B...

Vishay Telefunken

Applications

Voltage stabilization

Absolute Maximum Ratings

Tj = 25_C

Parameter Test Conditions Type Symbol Value Unit
Power dissipation l=4mm, TL=25°C P
Z–current I
Junction temperature T
Storage temperature range T

Maximum Thermal Resistance

Tj = 25_C

Parameter Test Conditions Symbol Value Unit
Junction ambient l=4mm, TL=constant R

thJA

Electrical Characteristics

Tj = 25_C

Parameter Test Conditions Type Symbol Min Typ Max Unit

Forward voltage IF=100mA V

F

Z

stg

V

j

94 9367

500 mW

PV/V

Z

175

–65...+175

300 K/W

1.5 V

mA

°

C

°

C

Document Number 85604
Rev. 3, 01-Apr-99 1 (6)

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BZX55B...

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Type V

BZX55B...

ZnomIZT

V mA V

for VZT and r

zjTrzjk

at IZK IR and IR at V

W W

mA

m

A

2)

m

A

R

V %/K

TK

2V7 2.7 5 2.64 to 2.76 < 85 < 600 1 < 10 < 50 1 –0.09 to –0.06
3V0 3.0 5 2.94 to 3.06 < 90 < 600 1 < 4 < 40 1 –0.08 to –0.05
3V3 3.3 5 3.24 to 3.36 < 90 < 600 1 < 2 < 40 1 –0.08 to –0.05
3V6 3.6 5 3.52 to 3.68 < 90 < 600 1 < 2 < 40 1 –0.08 to –0.05
3V9 3.9 5 3.82 to 3.98 < 90 < 600 1 < 2 < 40 1 –0.08 to –0.05
4V3 4.3 5 4.22 to 4.38 < 90 < 600 1 < 1 < 20 1 –0.06 to –0.03
4V7 4.7 5 4.60 to 4.80 < 80 < 600 1 < 0.5 < 10 1 –0.05 to +0.02
5V1 5.1 5 5.00 to 5.20 < 60 < 550 1 < 0.1 < 2 1 –0.02 to +0.02
5V6 5.6 5 5.48 to 5.72 < 40 < 450 1 < 0.1 < 2 1 –0.05 to +0.05
6V2 6.2 5 6.08 to 6.32 < 10 < 200 1 < 0.1 < 2 2 0.03 to 0.06
6V8 6.8 5 6.66 to 6.94 < 8 < 150 1 < 0.1 < 2 3 0.03 to 0.07
7V5 7.5 5 7.35 to 7.65 < 7 < 50 1 < 0.1 < 2 5 0.03 to 0.07
8V2 8.2 5 8.04 to 8.36 < 7 < 50 1 < 0.1 < 2 6.2 0.03 to 0.08
9V1 9.1 5 8.92 to 9.28 < 10 < 50 1 < 0.1 < 2 6.8 0.03 to 0.09

10 10 5 9.80 to 10.20 < 15 < 70 1 < 0.1 < 2 7.5 0.03 to 0.1
11 11 5 10.78 to 11.22 < 20 < 70 1 < 0.1 < 2 8.2 0.03 to 0.11
12 12 5 11.76 to 12.24 < 20 < 90 1 < 0.1 < 2 9.1 0.03 to 0.11
13 13 5 12.74 to 13.26 < 26 < 110 1 < 0.1 < 2 10 0.03 to 0.11
15 15 5 14.70 to 15.30 < 30 < 110 1 < 0.1 < 2 11 0.03 to 0.1 1
16 16 5 15.70 to 16.30 < 40 < 170 1 < 0.1 < 2 12 0.03 to 0.11
18 18 5 17.64 to 18.36 < 50 < 170 1 < 0.1 < 2 13 0.03 to 0.11
20 20 5 19.60 to 20.40 < 55 < 220 1 < 0.1 < 2 15 0.03 to 0.11
22 22 5 21.55 to 22.45 < 55 < 220 1 < 0.1 < 2 16 0.04 to 0.12
24 24 5 23.5 to 24.5 < 80 < 220 1 < 0.1 < 2 18 0.04 to 0,12
27 27 5 26.4 to 27.6 < 80 < 220 1 < 0.1 < 2 20 0.04 to 0.12
30 30 5 29.4 to 30.6 < 80 < 220 1 < 0.1 < 2 22 0.04 to 0.12
33 33 5 32.4 to 33.6 < 80 < 220 1 < 0.1 < 2 24 0.04 to 0.12
36 36 5 35.3 to 36.7 < 80 < 220 1 < 0.1 < 2 27 0.04 to 0.12
39 39 2.5 38.2 to 39.8 < 90 < 500 0.5 < 0.1 < 5 30 0.04 to 0.12
43 43 2.5 42.1 to 43.9 < 90 < 600 0.5 < 0.1 < 5 33 0.04 to 0.12
47 47 2.5 46.1 to 47.9 < 110 < 700 0.5 < 0.1 < 5 36 0.04 to 0.12
51 51 2.5 50.0 to 52.0 < 125 < 700 0.5 < 0.1 < 10 39 0.04 to 0.12
56 56 2.5 54.9 to 57.1 < 135 < 1000 0.5 < 0.1 < 10 43 0.04 to 0.12
62 62 2.5 60.8 to 63.2 < 150 < 1000 0.5 < 0.1 < 10 47 0.04 to 0.12
68 68 2.5 66.6 to 69.4 < 200 < 1000 0.5 < 0.1 < 10 51 0.04 to 0.12
75 75 2.5 73.5 to 76.5 < 250 < 1500 0.5 < 0.1 < 10 56 0.04 to 0.12

VZ

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Rev. 3, 01-Apr-992 (6)

Characteristics (Tj = 25_C unless otherwise specified)

)

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Vishay Telefunken

500

400

300

ll

200

100

TL=constant

0

thJA

0 5 10 15

R – Therm. Resist. Junction / Ambient ( K/W )

95 9611

l – Lead Length ( mm )

Figure 1. Thermal Resistance vs. Lead Length

600

500

400

300

200

100

tot

P – Total Power Dissipation ( mW )

0

0 40 80 120 160

T

95 9602

– Ambient Temperature ( °C )

amb

Figure 2. Total Power Dissipation vs.

Ambient Temperature

1000

20

200

1.3

1.2

1.1

1.0

Ztn

0.9

V – Relative Voltage Change

V

Ztn=VZt/VZ

(25°C)

TKVZ=10 10–4/K

–4

8 10

–4

6 10
4 10–4/K

–4

2 10

0

–4

–2 10

–4 10–4/K

/K
/K

/K

/K

0.8
240

95 9599

–60 0 60 120 180

Tj – Junction Temperature ( °C )

Figure 4. Typical Change of Working Voltage vs.

Junction Temperature

15

–4

Z

10

5

IZ=5mA

0

VZ

–5

TK – Temperature Coefficient of V ( 10 /K

95 9600

0102030

VZ – Z-Voltage ( V )

40

50

Figure 5. Temperature Coefficient of Vz vs. Z–Voltage

200

Tj=25°C

100

150

VR=2V

Tj=25°C

IZ=5mA

100

10

Z

V – Voltage Change ( mV )

D

95 9598

1

0 5 10 15 20

VZ – Z-Voltage ( V )

25

Figure 3. Typical Change of Working Voltage

under Operating Conditions at T

Document Number 85604

amb

=25°C

50

D

C – Diode Capacitance ( pF )

0

0 5 10 15

95 9601

VZ – Z-Voltage ( V )

Figure 6. Diode Capacitance vs. Z–Voltage

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20

25

Rev. 3, 01-Apr-99 3 (6)

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Vishay Telefunken

100

10

Tj=25°C

1

0.1

F

I – Forward Current ( mA )

0.01

0.001
0 0.2 0.4 0.6 0.8

95 9605

VF – Forward Voltage ( V )

Figure 7. Forward Current vs. Forward Voltage

100

80

P

=500mW

tot

T

=25°C

amb

60

40

Z

I – Z-Current ( mA )

20

0

04 81216

95 9604

VZ – Z-Voltage ( V )

Figure 8. Z–Current vs. Z–Voltage

1.0

20

50

P

=500mW

40

tot

T

=25°C

amb

30

20

Z

I – Z-Current ( mA )

10

0

35

95 9607

15 20 25 30

VZ – Z-Voltage ( V )

Figure 9. Z–Current vs. Z–Voltage

1000

W

IZ=1mA

100

5mA

10mA

10

Z

r – Differential Z-Resistance ( )

Tj=25°C

25

95 9606

1

0 5 10 15 20

VZ – Z-Voltage ( V )

Figure 10. Differential Z–Resistance vs. Z–Voltage

1000

tp/T=0.5

100

tp/T=0.2

10

tp/T=0.1

tp/T=0.02

tp/T=0.05

1

thp

Z – Thermal Resistance for Pulse Cond. (K/W)

–1

10

0

10

tp/T=0.01

1

10

Single Pulse

iZM=(–VZ+(V

2

+4rzjDT/Z

Z

R

=300K/W

thJA

D

T=T

jmax–Tamb

1/2

)

)/(2rzj)

thp

2

10

tp – Pulse Length ( ms )95 9603

Figure 11. Thermal Response

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Rev. 3, 01-Apr-994 (6)

Dimensions in mm

BZX55B...

Vishay Telefunken

Cathode Identification

technical drawings
according to DIN
specifications

94 9366

Standard Glass Case

54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3g

∅ 1.7 max.

∅ 0.55 max.

3.9 max.26 min.

26 min.

Document Number 85604
Rev. 3, 01-Apr-99 5 (6)

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Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their

impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

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