Datasheet BZW50-47B, BZW50-15B, BZW50-82, BZW50-10, BZW50-10B Datasheet (SGS Thomson Microelectronics)
Page 1
BZW50-10,B/180,B
TRANSIL
FEATURES
PEAK PULSEPOWER: 5000W (10/1000µs)
STAND-OFF VOLTAGERANGE:
From10V to 180V
UNI ANDBIDIRECTIONALTYPES
LOW CLAMPINGFACTOR
FASTRESPONSETIME
UL RECOGNIZED
DESCRIPTION
Transildiodes provide high overvoltageprotection
by clamping action. Their instantaneousresponse
to transientovervoltagesmakes them particularly
suited to protect voltage sensitive devices such
as MOS Technology and low voltage supplied
IC’s.
ABSOLUTE MAXIMUMRATINGS(T
amb
=25°C)
Symbol Parameter Value Unit
AG
TM
P
PP
P Powerdissipationon infinite heatsink T
I
FSM
T
stg
T
T
L
Peakpulse power dissipation (seenote 1) Tj initial= T
Nonrepetitivesurge peak forwardcurrent
forunidirectionaltypes
Storagetemperaturerange
Maximumjunctiontemperature
j
Maximumlead temperaturefor solderingduring 10s at 5mm
amb
=75°C 6.5 W
amb
tp = 10ms
Tj initial= T
amb
5000 W
500 A
- 65 to+ 175
175
230 °C
fromcase
Note 1 : Fora surge greater than themaximum values,the diode will fail in short-circuit.
THERMALRESISTANCES
Symbol Parameter Value Unit
R
th (j-l)
R
th (j-a)
January 1998Ed : 2
Junctionto leads 15 °C/W
Junctionto ambienton printedcircuit. L
=10mm 65 °C/W
lead
°C
°C
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Page 2
BZW50-10,B/180,B
ELECTRICALCHARACTERISTICS
Symbol Parameter
V
RM
V
BR
V
CL
I
RM
I
PP
α
V
Stand-offvoltage
Breakdownvoltage
Clampingvoltage
Leakagecurrent @ V
Peakpulse current
T Voltagetemperaturecoefficient
Forwardvoltagedrop
F
Types IRM@V
RM
(T
RM
amb
=25°C)
VBR@I
R
VVCLV
VCL@I
PP
BR
I
I
F
I
RM
I
PP
VCL@I
V
F
V
TC
PP
α
V
RM
max min max max max typ
note2 10/1000µs 8/20µs note3 note4
Unidirectional BidirectionalµAVVmAVAVA10
-4
/°CpF
BZW50-10 BZW50-10B 5 10 11.1 1 18.8 266 23.4 2564 7.8 24000
BZW50-12 BZW50-12B 5 12 13.3 1 22 227 28 2143 8.4 18500
BZW50-15 BZW50-15B 5 15 16.6 1 26.9 186 35 1714 8.8 13500
BZW50-18 BZW50-18B 5 18 20 1 32.2 155 41.5 1446 9.2 11500
BZW50-22 BZW50-22B 5 22 24.4 1 39.4 127 51 1177 9.6 8500
BZW50-27 BZW50-27B
BZW50-33 BZW50-33B
BZW50-39 BZW50-39B
5 27 30 1 48.3 103 62 968 9.8 7000
5 33 36.6 1 59 85 76 789 10 5750
5 39 43.3 1 69.4 72 90 667 10.1 4800
BZW50-47 BZW50-47B 5 47 52 1 83.2 60.1 108 556 10.3 4100
BZW50-56 BZW50-56B 5 56 62.2 1 99.6 50 129 465 10.4 3400
BZW50-68 BZW50-68B 5 68 75.6 1 121 41 157 382 10.5 3000
BZW50-82 BZW50-82B
BZW50-100 BZW50-100B
5 82 91 1 145 34 189 317 10.6 2600
5 100 111 1 179 28 228 263 10.7 2300
BZW50-120 BZW50-120B 5 120 133 1 215 23 274 219 10.8 1900
BZW50-150 BZW50-150B 5 150 166 1 269 19 343 175 10.8 1700
BZW50-180 BZW50-180B 5 180 200 1 322 16 410 146 10.8 1500
%I
PP
100
50
0
Note 2 : Pulsetest: tp<50 ms.
Note 3 : ∆VBR=αT*(T
Note 4 : VR= 0 V, F= 1 MHz.For bidirectionaltypes,
capacitancevalue is divided by 2.
10 s
PULSE WAVEFORM 10/1000 s
1000 s
- 25)*VBR(25°C)
amb
2/5
Fig. 1:
Peak pulse power dissipation versus initial
junctiontemperature(printed circuitboard).
t
Page 3
Fig.2 : Peakpulsepower versusexponentialpulseduration.
Pp (W)
p
1E7
1E6
1E5
1E4
1E3
1E2
0.001 0.01 0.1 1 10 100
BZW50-10,B/180,B
Tj initial = 25øC
tp (ms ) EXPO.
°
Fig. 3 :
Clampingvoltageversus peakpulse current.
Exponentialwaveform t
=20µs________
p
= 1 ms-------------
t
p
t
=10 ms...............
p
Note: Thecurves of the figure 3 are specifiedfor a junctiontemperatureof 25 °C before surge.
Thegiven resultsmay be extrapolatedfor other junctiontemperaturesby usingthe followingformula:
∆V
= αT*(T
BR
-25)*VBR(25°C).
amb
Forintermediatevoltages, extrapolatethe givenresults.
3/5
Page 4
BZW50-10,B/180,B
Fig. 4a :
Capacitance versus reverse applied
voltage forunidirectional types (typical values).
Fig. 5 :
Peak forward voltage drop versus peak
forward current (typical values for unidirectional
types).
Note : Multiply by 2 for units withVBR> 220V.
Fig. 4b : Capacitance versus reverse applied
voltage forbidirectional types (typical values).
Fig.6 :
Transientthermalimpedancejunction-ambient versus pulse duration (For FR4 PC Board
withL
=10mm).
lead
Fig.7 : Relative variation of leakagecurrent
versus junction temperature.
4/5
Page 5
ORDERCODE
BZW50-10,B/180,B
BZW 50
-
10 B
5000W
STAND-OFFVOLTAGE
BIDIRECTIONAL
No suffix : Unidirectional
MARKING: Logo, Date Code,TypeCode, Cathode Band(for unidirectionaltypes only).
PACKAGEMECHANICALDATA
AG(Plastic)
BAB
note 1
L1
note 1
L1
C
REF.
Millimeters Inches
Min. Max. Min. Max.
A 9 0.354
B 20 0.787
∅ C 8 0.315
∅ D 1.35 1.45 0.053 0.057
D
note 2
D
Note1 : Thelead is not controlledwithinzone L1
L1 1.27 0.050
Note2 :Theminimumaxiallengthwithinwhichthedevice
canbebentat rightanglesis0.79”(20mm).
DIMENSIONS
Packaging : standard packaging is tape andreel.
Weight = 1.6 g.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is grantedby implication or otherwise under any patentor patentrights ofSGS-THOMSON Microelectronics.Specifications mentioned
in thispublication are subjectto change without notice. This publicationsupersedes and replacesall informationpreviously supplied.
SGS-THOMSONMicroelectronics productsare notauthorizedforuse as critical components in life support devices or systems withoutexpress
written approval of SGS-THOMSON Microelectronics.
1998SGS-THOMSON Microelectronics- Printed in Italy - All rightsreserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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