Datasheet BZW03-C91, BZW03-C22, BZW03-C200-20, BZW03-C43, BZW03-C39 Datasheet (Philips)

DATA SH EET

Product specification
Supersedes data of April 1992

1996 May 14

DISCRETE SEMICONDUCTORS

BZW03 series

Voltage regulator diodes

handbook, 2 columns

M3D118

1996 May 14 2

Philips Semiconductors Product specification

Voltage regulator diodes BZW03 series

FEATURES

• Glass passivated

• High maximum operating

temperature

• Low leakage current

• Excellent stability

• Zener working voltage range:

7.5 to 270 V for 38 types

• Transient suppressor stand-off
voltage range:

6.2 to 430 V for 45 types

• Available in ammo-pack

• Also available with preformed leads

for easy insertion.

DESCRIPTION

Rugged glass SOD64 package, using
a high temperature alloyed

construction. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.

Fig.1 Simplified outline (SOD64) and symbol.

2/3 page (Datasheet)

MAM205

ka

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

P

tot

total power dissipation Ttp=25°C; lead length 10 mm; see Fig.2 − 6.00 W

T

amb

=45°C; see Fig.2;

PCB mounted (see Fig.6)

− 1.75 W

P

ZRM

repetitive peak reverse power
dissipation

− 20 W

P

ZSM

non-repetitive peak reverse
power dissipation

tp= 100 µs; square pulse;
Tj=25°C prior to surge; see Fig.3

− 1000 W

P

RSM

non-repetitive peak reverse
power dissipation

10/1000 µs exponential pulse (see Fig.7);
Tj=25°C prior to surge; see Fig.4

− 500 W

T

stg

storage temperature −65 +175 °C

T

j

junction temperature −65 +175 °C

1996 May 14 3

Philips Semiconductors Product specification

Voltage regulator diodes BZW03 series

ELECTRICAL CHARACTERISTICS
Total series

T

j

=25°C unless otherwise specified.

Per type when used as voltage regulator diodes

T

j

=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V

F

forward voltage IF= 1 A; see Fig.5 1.2 V

TYPE

No.

SUFFIX

(1)

WORKING VOLTAGE

DIFFERENTIAL

RESISTANCE

TEMPERATURE

COEFFICIENT

TEST

CURRENT

REVERSE CURRENT at

REVERSE VOLTAGE

VZ (V) at I

Z

r

dif

(Ω)atI

Z

SZ (%/K) at I

Z

IZ (mA)

IR (µA)

at VR (V)

MIN. NOM. MAX. TYP. MAX. MIN. MAX. MAX.

C7V5 7.0 7.5 7.9 0.7 1.5 0.00 0.07 175 1500 5.6
C8V2 7.7 8.2 8.7 0.8 1.5 0.03 0.08 150 1200 6.2
C9V1 8.5 9.1 9.6 0.9 2.0 0.03 0.08 150 40 6.8
C10

9.4 10 10.6 1.0 2.0 0.05 0.09 125 20 7.5

C11

10.4 11 11.6 1.1 2.5 0.05 0.10 125 15 8.2

C12

11.4 12 12.7 1.1 2.5 0.05 0.10 100 10 9.1

C13

12.4 13 14.1 1.2 2.5 0.05 0.10 100 4 10

C15

13.8 15 15.6 1.2 2.5 0.05 0.10 75 2 11

C16

15.3 16 17.1 1.3 2.5 0.06 0.11 75 2 12

C18

16.8 18 19.1 1.3 2.5 0.06 0.11 65 2 13

C20

18.8 20 21.2 1.5 3.0 0.06 0.11 65 2 15

C22

20.8 22 23.3 1.6 3.5 0.06 0.11 50 2 16

C24

22.8 24 25.6 1.8 3.5 0.06 0.11 50 2 18

C27

25.1 27 28.9 2.5 5 0.06 0.11 50 2 20

C30

28 30 32 4 8 0.06 0.11 40 2 22

C33

31 33 35 5 10 0.06 0.11 40 2 24

C36

34 36 38 6 11 0.06 0.11 30 2 27

C39

37 39 41 7 14 0.06 0.11 30 2 30

C43

40 43 46 10 20 0.07 0.12 30 2 33

C47

44 47 50 12 25 0.07 0.12 25 2 36

C51

48 51 54 14 27 0.07 0.12 25 2 39

C56

52 56 60 18 35 0.07 0.12 20 2 43

C62

58 62 66 20 42 0.08 0.13 20 2 47

C68

64 68 72 22 44 0.08 0.13 20 2 51

C75

70 75 79 25 45 0.08 0.13 20 2 56

C82

77 82 87 30 65 0.08 0.13 15 2 62

C91

85 91 96 40 75 0.09 0.13 15 2 68

1996 May 14 4

Philips Semiconductors Product specification

Voltage regulator diodes BZW03 series

Note

1. To complete the type number the suffix is added to the basic type number, e.g. BZW03-C100.

C100

94 100 106 45 90 0.09 0.13 12 2 75

C110

104 110 116 65 125 0.09 0.13 12 2 82

C120

114 120 127 90 170 0.09 0.13 10 2 91

C130

124 130 141 100 190 0.09 0.13 10 2 100

C150

138 150 156 150 330 0.09 0.13 8 2 110

C160

153 160 171 180 350 0.09 0.13 8 2 120

C180

168 180 191 210 430 0.09 0.13 5 2 130

C200

188 200 212 250 500 0.09 0.13 5 2 150

C220

208 220 233 350 700 0.09 0.13 5 2 160

C240

228 240 256 450 900 0.09 0.13 5 2 180

C270

251 270 289 600 1200 0.09 0.13 5 2 200

TYPE

No.

SUFFIX

(1)

WORKING VOLTAGE

DIFFERENTIAL

RESISTANCE

TEMPERATURE

COEFFICIENT

TEST

CURRENT

REVERSE CURRENT at

REVERSE VOLTAGE

VZ (V) at I

Z

r

dif

(Ω)atI

Z

SZ (%/K) at I

Z

IZ (mA)

IR (µA)

at VR (V)

MIN. NOM. MAX. TYP. MAX. MIN. MAX. MAX.

1996 May 14 5

Philips Semiconductors Product specification

Voltage regulator diodes BZW03 series

Per type when used as transient suppressor diodes

T

j

= 25°C unless otherwise specified.

TYPE

NUMBER

REVERSE

BREAKDOWN

VOLTAGE

TEMPERATURE

COEFFICIENT

TEST

CURRENT

CLAMPING

VOLTAGE

REVERSE

CURRENT at

STAND-OFF

VOLTAGE

V

(BR)R

(V)

at I

test

SZ(%/K) at I

test

I

test

(mA)

V

(CL)R

(V)

at I

RSM

(A)

note 1

I

R

(µA)

at V

R

(V)

MIN. MIN. MAX. MAX. MAX.

BZW03-C7V5 7.0 0.00 0.07 175 11.3 44.2 3000 6.2
BZW03-C8V2 7.7 0.03 0.08 150 12.3 40.6 2400 6.8
BZW03-C9V1 8.5 0.03 0.08 150 13.3 37.6 100 7.5
BZW03-C10

9.4 0.05 0.09 125 14.8 34.0 40 8.2

BZW03-C11

10.4 0.05 0.10 125 15.7 31.8 30 9.1

BZW03-C12

11.4 0.05 0.10 100 17.0 29.4 20 10

BZW03-C13

12.4 0.05 0.10 100 18.9 26.4 10 11

BZW03-C15

13.8 0.05 0.10 75 20.9 23.9 10 12

BZW03-C16

15.3 0.06 0.11 75 22.9 21.8 10 13

BZW03-C18

16.8 0.06 0.11 65 25.6 19.5 10 15

BZW03-C20

18.8 0.06 0.11 65 28.4 17.6 10 16

BZW03-C22

20.8 0.06 0.11 50 31.0 16.1 10 18

BZW03-C24

22.8 0.06 0.11 50 33.8 14.8 10 20

BZW03-C27

25.1 0.06 0.11 50 38.1 13.1 10 22

BZW03-C30

28 0.06 0.11 40 42.2 11.8 10 24

BZW03-C33

31 0.06 0.11 40 46.2 10.8 10 27

BZW03-C36

34 0.06 0.11 30 50.1 10.0 10 30

BZW03-C39

37 0.06 0.11 30 54.1 9.2 10 33

BZW03-C43

40 0.07 0.12 30 60.7 8.2 10 36

BZW03-C47

44 0.07 0.12 25 65.5 7.6 10 39

BZW03-C51

48 0.07 0.12 25 70.8 7.0 10 43

BZW03-C56

52 0.07 0.12 20 78.6 6.3 10 47

BZW03-C62

58 0.08 0.13 20 86.5 5.8 10 51

BZW03-C68

64 0.08 0.13 20 94.4 5.3 10 56

BZW03-C75

70 0.08 0.13 20 103.5 4.8 10 62

BZW03-C82

77 0.08 0.13 15 114.0 4.3 10 68

BZW03-C91

85 0.09 0.13 15 126 3.9 10 75

BZW03-C100

94 0.09 0.13 12 139 3.6 10 82

BZW03-C110

104 0.09 0.13 12 152 3.3 10 91

BZW03-C120

114 0.09 0.13 10 167 3.0 10 100

BZW03-C130

124 0.09 0.13 10 185 2.7 10 110

BZW03-C150

138 0.09 0.13 8 204 2.4 10 120

BZW03-C160

153 0.09 0.13 8 224 2.2 10 130

1996 May 14 6

Philips Semiconductors Product specification

Voltage regulator diodes BZW03 series

Note

1. Non-repetitive peak reverse current in accordance with

“IEC 60-1, Section 8”

(10/1000 µs pulse); see Fig.7.

THERMAL CHARACTERISTICS

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.6.

For more information please refer to the

“General Part of associated Handbook”

.

BZW03-C180

168 0.09 0.13 5 249 2.0 10 150

BZW03-C200

188 0.09 0.13 5 276 1.8 10 160

BZW03-C220 208 0.09 0.13 5 305 1.6 10 180
BZW03-C240 228 0.09 0.13 5 336 1.5 10 200
BZW03-C270 251 0.09 0.13 5 380 1.3 10 220
BZW03-C300 280 0.09 0.13 5 419 1.2 10 240
BZW03-C330 310 0.09 0.13 5 459 1.1 10 270
BZW03-C360 340 0.09 0.13 5 498 1.0 10 300
BZW03-C390 370 0.09 0.13 5 537 0.93 10 330
BZW03-C430 400 0.09 0.13 5 603 0.83 10 360
BZW03-C470 440 0.09 0.13 5 655 0.76 10 390
BZW03-C510 480 0.09 0.13 5 707 0.71 10 430

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-tp

thermal resistance from junction to tie-point lead length = 10 mm 25 K/W

R

th j-a

thermal resistance from junction to ambient note 1 75 K/W

TYPE

NUMBER

REVERSE

BREAKDOWN

VOLTAGE

TEMPERATURE

COEFFICIENT

TEST

CURRENT

CLAMPING

VOLTAGE

REVERSE

CURRENT at

STAND-OFF

VOLTAGE

V

(BR)R

(V)

at I

test

SZ(%/K) at I

test

I

test

(mA)

V

(CL)R

(V)

at I

RSM

(A)

note 1

I

R

(µA)

at V

R

(V)

MIN. MIN. MAX. MAX. MAX.

1996 May 14 7

Philips Semiconductors Product specification

Voltage regulator diodes BZW03 series

GRAPHICAL DATA

Fig.2 Maximum total power dissipation as a

function of temperature.

Solid line: tie-point temperature; lead length = 10 mm.
Dotted line: ambient temperature; device mounted as

shown in Fig.6.

handbook, halfpage

0 200

6

0

2

4

MBH447

P

tot

(W)

100

T (°C)

Tj=25°C prior to surge.

Fig.3 Maximum non-repetitive peak reverse

power dissipation as a function of pulse
duration (square pulse).

handbook, halfpage

10

−2

10

10

2

10

3

10

4

10

−1

1tp (ms)

P

ZSM
(W)

10

MBH448

Tj=25°C prior to surge.
For definition of exponential pulse see Fig.7.

Fig.4 Maximum non-repetitive peak reverse

power dissipation as a function of pulse
duration (exponential pulse).

handbook, halfpage

10

−2

10

2

10

3

10

4

10

−1

1t2 (ms)

P

RSM
(W)

10

MBH449

Tj=25°C.

Fig.5 Forward current as a function of forward

voltage; typical values.

handbook, halfpage

02

6

0

2

4

MBH450

I

F

(A)

1

VF (V)

1996 May 14 8

Philips Semiconductors Product specification

Voltage regulator diodes BZW03 series

Fig.6 Device mounted on a printed-circuit board.

Dimensions in mm.

handbook, halfpage

MGA200

3

2

7

50

25

50

Fig.7 Non-repetitive peak reverse current

pulse definition.

In accordance with

“IEC 60-1, Section 8”

.
t1=10µs.
t2= 1000 µs.

handbook, halfpage

MGD521

I

RSM

(%)

100

90

50

10

t

1

t

2

t

1996 May 14 9

Philips Semiconductors Product specification

Voltage regulator diodes BZW03 series

PACKAGE OUTLINE

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Dimensions in mm.
The marking band indicates the cathode.

Fig.8 SOD64.

handbook, full pagewidth

MBC049

4.5

max

ka

28 min28 min 5.0 max

1.35
max