
Philips Semiconductors Product specification
Voltage regulator diodes BZV85 series
FEATURES
• Total power dissipation:
max. 1.3 W
• Tolerance series: approx. ±5%
• Working voltage range:
DESCRIPTION
Medium-power voltage regulator diodes in hermetically sealed leaded glass
SOD66 (DO-41) packages. The diodes are available in the normalized E24
approx. ±5% tolerance range. The series consists of 33 types with nominal
working voltages from 3.6 to 75 V (BZV85-C3V6 to BZV85-C75).
nom. 3.6 to 75 V (E24 range)
• Non-repetitive peak reverse power
dissipation: max. 60 W.
APPLICATIONS
• Stabilization purposes.
handbook, halfpage
The diodes are type branded.
ka
Fig.1 Simplified outline (SOD66; DO-41) and symbol.
MAM241
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZSM
P
tot
continuous forward current − 500 mA
non-repetitive peak reverse current tp= 100 µs; square wave;
Tj=25°C prior to surge; see Fig.3
t
= 10 ms; half sinewave;
p
Tj=25°C prior to surge
total power dissipation T
=25°C; lead length 10 mm;
amb
see Table
“Per type”
see Table
“Per type”
− 1W
note 1
note 2 − 1.3 W
P
T
T
ZSM
stg
j
non-repetitive peak reverse power
dissipation
tp= 100 µs; square wave;
Tj=25°C prior to surge
− 60 W
storage temperature −65 +200 °C
junction temperature − 200 °C
Notes
1. Device mounted on a printed circuit-board with 1 cm
2
copper area per lead.
2. If the leads are kept at Ttp=55°C at 4 mm from body.
ELECTRICAL CHARACTERISTICS
Total series
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage IF= 50 mA; see Fig.4 1 V
1999 May 11 2

1999 May 11 3
Per type
=25°C unless otherwise specified.
T
j
Philips Semiconductors Product specification
Voltage regulator diodes BZV85 series
BZV85-
CXXX
WORKING
VOLTAGE
(V)
V
Z
at I
Ztest
DIFFERENTIAL
RESISTANCE
(Ω)
r
dif
at I
Ztest
TEMP. COEFF.
(mV/K)
S
Z
at I
Ztest
see Figs 5 and 6
TEST
CURRENT
I
(mA)
Ztest
DIODE CAP.
Cd(pF)
at f = 1 MHz;
VR=0V
REVERSE
CURRENT at
REVERSE
VOLTAGE
IR (µA)
at tp= 100 µs;
V
R
(V)
NON-REPETITIVE
PEAK REVERSE CURRENT
I
ZSM
at tp= 10 ms;
T
amb
=25°C
T
amb
MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. (A) MAX. (mA)
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
3.4 3.8 15 −3.5 −1.0 60 450 50 1.0 8.0 2000
3.7 4.1 15 −3.5 −1.0 60 450 10 1.0 8.0 1950
4.0 4.6 13 −2.7 0 50 450 5 1.0 8.0 1850
4.4 5.0 13 −2.0 +0.7 45 300 3 1.0 8.0 1800
4.8 5.4 10 −0.5 +2.2 45 300 3 2.0 8.0 1750
5.2 6.0 7 0 2.7 45 300 2 2.0 8.0 1700
5.8 6.6 4 0.6 3.6 35 200 2 3.0 7.0 1620
6.4 7.2 3.5 1.3 4.3 35 200 2 4.0 7.0 1550
7.0 7.9 3 2.5 5.5 35 150 1 4.5 5.0 1500
7.7 8.7 5 3.1 6.1 25 150 0.7 5.0 5.0 1400
8.5 9.6 5 3.8 7.2 25 150 0.7 6.5 4.0 1340
9.4 10.6 8 4.7 8.5 25 90 0.2 7.0 4.0 1200
10.4 11.6 10 5.3 9.3 20 85 0.2 7.7 3.0 1100
11.4 12.7 10 6.3 10.8 20 85 0.2 8.4 3.0 1000
12.4 14.1 10 7.4 12.0 20 80 0.2 9.1 3.0 900
13.8 15.6 15 8.9 13.6 15 75 0.05 10.5 2.5 760
15.3 17.1 15 10.7 15.4 15 75 0.05 11.0 1.75 700
16.8 19.1 20 11.8 17.1 15 70 0.05 12.5 1.75 600
18.8 21.2 24 13.6 19.1 10 60 0.05 14.0 1.75 540
20.8 23.3 25 16.6 22.1 10 60 0.05 15.5 1.5 500
22.8 25.6 30 18.3 24.3 10 55 0.05 17 1.5 450
27 25.1 28.9 40 20.1 27.5 8 50 0.05 19 1.2 400
30 28.0 32.0 45 22.4 32.0 8 50 0.05 21 1.2 380
=25°C

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Printed in The Netherlands 115002/00/02/pp8 Date of release: 1999 May 11 Document order number: 9397 75005929