Datasheet BZV85-C13, BZV85-C12, BZV85-C20, BZV85-C18, BZV85-C47 Datasheet (Philips)

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Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D130
BZV85 series
Voltage regulator diodes
Product specification Supersedes data of 1996 Apr 26
1999 May 11
Page 2
Philips Semiconductors Product specification
Voltage regulator diodes BZV85 series
FEATURES
Total power dissipation: max. 1.3 W
Tolerance series: approx. ±5%
Working voltage range:
DESCRIPTION
Medium-power voltage regulator diodes in hermetically sealed leaded glass SOD66 (DO-41) packages. The diodes are available in the normalized E24 approx. ±5% tolerance range. The series consists of 33 types with nominal working voltages from 3.6 to 75 V (BZV85-C3V6 to BZV85-C75).
nom. 3.6 to 75 V (E24 range)
Non-repetitive peak reverse power dissipation: max. 60 W.
APPLICATIONS
Stabilization purposes.
handbook, halfpage
The diodes are type branded.
ka
Fig.1 Simplified outline (SOD66; DO-41) and symbol.
MAM241
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZSM
P
tot
continuous forward current 500 mA non-repetitive peak reverse current tp= 100 µs; square wave;
Tj=25°C prior to surge; see Fig.3 t
= 10 ms; half sinewave;
p
Tj=25°C prior to surge
total power dissipation T
=25°C; lead length 10 mm;
amb
see Table “Per type”
see Table “Per type”
1W
note 1 note 2 1.3 W
P
T T
ZSM
stg j
non-repetitive peak reverse power dissipation
tp= 100 µs; square wave; Tj=25°C prior to surge
60 W
storage temperature 65 +200 °C junction temperature 200 °C
Notes
1. Device mounted on a printed circuit-board with 1 cm
2
copper area per lead.
2. If the leads are kept at Ttp=55°C at 4 mm from body.
ELECTRICAL CHARACTERISTICS Total series
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage IF= 50 mA; see Fig.4 1 V
1999 May 11 2
Page 3
1999 May 11 3
Per type
=25°C unless otherwise specified.
T
j
Philips Semiconductors Product specification
Voltage regulator diodes BZV85 series
BZV85-
CXXX
WORKING
VOLTAGE
(V)
V
Z
at I
Ztest
DIFFERENTIAL
RESISTANCE
()
r
dif
at I
Ztest
TEMP. COEFF.
(mV/K)
S
Z
at I
Ztest
see Figs 5 and 6
TEST
CURRENT
I
(mA)
Ztest
DIODE CAP.
Cd(pF)
at f = 1 MHz;
VR=0V
REVERSE
CURRENT at
REVERSE VOLTAGE
IR (µA)
at tp= 100 µs;
V
R
(V)
NON-REPETITIVE
PEAK REVERSE CURRENT
I
ZSM
at tp= 10 ms;
T
amb
=25°C
T
amb
MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. (A) MAX. (mA)
3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24
3.4 3.8 15 3.5 1.0 60 450 50 1.0 8.0 2000
3.7 4.1 15 3.5 1.0 60 450 10 1.0 8.0 1950
4.0 4.6 13 2.7 0 50 450 5 1.0 8.0 1850
4.4 5.0 13 2.0 +0.7 45 300 3 1.0 8.0 1800
4.8 5.4 10 0.5 +2.2 45 300 3 2.0 8.0 1750
5.2 6.0 7 0 2.7 45 300 2 2.0 8.0 1700
5.8 6.6 4 0.6 3.6 35 200 2 3.0 7.0 1620
6.4 7.2 3.5 1.3 4.3 35 200 2 4.0 7.0 1550
7.0 7.9 3 2.5 5.5 35 150 1 4.5 5.0 1500
7.7 8.7 5 3.1 6.1 25 150 0.7 5.0 5.0 1400
8.5 9.6 5 3.8 7.2 25 150 0.7 6.5 4.0 1340
9.4 10.6 8 4.7 8.5 25 90 0.2 7.0 4.0 1200
10.4 11.6 10 5.3 9.3 20 85 0.2 7.7 3.0 1100
11.4 12.7 10 6.3 10.8 20 85 0.2 8.4 3.0 1000
12.4 14.1 10 7.4 12.0 20 80 0.2 9.1 3.0 900
13.8 15.6 15 8.9 13.6 15 75 0.05 10.5 2.5 760
15.3 17.1 15 10.7 15.4 15 75 0.05 11.0 1.75 700
16.8 19.1 20 11.8 17.1 15 70 0.05 12.5 1.75 600
18.8 21.2 24 13.6 19.1 10 60 0.05 14.0 1.75 540
20.8 23.3 25 16.6 22.1 10 60 0.05 15.5 1.5 500
22.8 25.6 30 18.3 24.3 10 55 0.05 17 1.5 450
27 25.1 28.9 40 20.1 27.5 8 50 0.05 19 1.2 400 30 28.0 32.0 45 22.4 32.0 8 50 0.05 21 1.2 380
=25°C
Page 4
1999 May 11 4
BZV85-
CXXX
WORKING
VOLTAGE
V
(V)
Z
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
()
dif
at I
Ztest
TEMP. COEFF.
SZ (mV/K)
at I
Ztest
see Figs 5 and 6
TEST
CURRENT
I
(mA)
Ztest
DIODE CAP.
Cd(pF)
at f = 1 MHz;
VR=0V
REVERSE
CURRENT at
REVERSE VOLTAGE
IR (µA)
at tp= 100 µs;
V
R
(V)
NON-REPETITIVE
PEAK REVERSE CURRENT
T
=25°C
amb
MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. (A) MAX. (mA)
33 31.0 35.0 45 24.8 35.0 8 45 0.05 23 1.0 350 36 34.0 38.0 50 27.2 39.9 8 45 0.05 25 0.9 320 39 37.0 41.0 60 29.6 43.0 6 45 0.05 27 0.8 296 43 40.0 46.0 75 34.0 48.3 6 40 0.05 30 0.7 270 47 44.0 50.0 100 37.4 52.5 4 40 0.05 33 0.6 246 51 48.0 54.0 125 40.8 56.5 4 40 0.05 36 0.5 226 56 52.0 60.0 150 46.8 63.0 4 40 0.05 39 0.4 208 62 58.0 66.0 175 52.2 72.5 4 35 0.05 43 0.4 186 68 64.0 72.0 200 60.5 81.0 4 35 0.05 48 0.35 171 75 70.0 80.0 225 66.5 88.0 4 35 0.05 53 0.3 161
I
ZSM
at tp= 10 ms;
T
amb
Philips Semiconductors Product specification
Voltage regulator diodes BZV85 series
=25°C
Page 5
Philips Semiconductors Product specification
Voltage regulator diodes BZV85 series
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
R
th j-a
Note
1. Device mounted on a printed circuit-board with 1 cm2 copper area per lead.
GRAPHICAL DATA
thermal resistance from junction to tie-point lead length 4 mm; see Fig.2 110 K/W thermal resistance from junction to ambient lead length10 mm; note 1 175 K/W
3
10
handbook, full pagewidth
R
th j-tp
(K/W)
2
10
10
1
2
10
δ = 1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01 0
1
10
11010
2103
t
p
T
Fig.2 Thermal resistance from junction to tie-point with a lead length of 4 mm.
δ =
tp (ms)
MBG929
t
p
T
4
10
1999 May 11 5
Page 6
Philips Semiconductors Product specification
Voltage regulator diodes BZV85 series
Znom
MBG802
(V)
2
10
handbook, halfpage
I
ZSM
(A)
10
1
1
10
110
(1) tp=10µs; half sinewave; T (2) tp= 10ms; half sinewave; T
10 V
=25°C.
amb
=25°C.
amb
(1)
(2)
Fig.3 Non-repetitive peak reverse current as a
function of the nominal working voltage.
300
handbook, halfpage
I
F
(mA)
200
100
2
0
0 1.0
(1) Tj= 200 °C. (2) Tj=25°C.
Fig.4 Forward current as a function of forward
voltage; typical values.
0.5
MBG925
(1) (2)
VF (V)
10
handbook, halfpage
S
Z
(mV/K)
5
0
5 050
BZV85-C3V6 to C10.
Tj=25to150°C. For types above 7.5 V the temperature coefficient is independent
of current; see Table “Per type”.
10
9V1 8V2
7V5 6V8
25
6V2 5V6 5V1
4V7 4V3
3V6 3V9
MBG926
IZ (mA)
Fig.5 Temperature coefficient as a function of
working current; typical values.
Znom
MBG800
(V)
100
handbook, halfpage
S
Z
(mV/K)
80
60
40
20
0
1
IZ=I
; Tj=25to150°C.
Ztest
(1) Maximum values. (2) Typical values. (3) Minimum values.
10 V
Fig.6 Temperature coefficient as a function of
nominal working voltage.
(1)
(2)
(3)
2
10
1999 May 11 6
Page 7
Philips Semiconductors Product specification
Voltage regulator diodes BZV85 series
PACKAGE OUTLINE
Hermetically sealed glass package; axial leaded; 2 leads
k
LD L
DIMENSIONS (mm are the original dimensions)
G
UNIT
mm
Note
1. The marking band indicates the cathode.
b
max.
0.81
OUTLINE VERSION
SOD66 DO-41
D
max.
max.
IEC JEDEC EIAJ
L
1
min.
284.82.6
REFERENCES
SOD66
(1)
a
b
G
1
0 2 4 mm
scale
EUROPEAN
PROJECTION
ISSUE DATE
97-06-20
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 May 11 7
Page 8
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Printed in The Netherlands 115002/00/02/pp8 Date of release: 1999 May 11 Document order number: 9397 75005929
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