Page 1
DATA SH EET
Product specification
Supersedes data of 1996 Apr 26
1999 May 11
DISCRETE SEMICONDUCTORS
BZV85 series
Voltage regulator diodes
ook, halfpage
M3D130
Page 2
1999 May 11 2
Philips Semiconductors Product specification
Voltage regulator diodes BZV85 series
FEATURES
• Total power dissipation:
max. 1.3 W
• Tolerance series: approx. ±5%
• Working voltage range:
nom. 3.6 to 75 V (E24 range)
• Non-repetitive peak reverse power
dissipation: max. 60 W.
APPLICATIONS
• Stabilization purposes.
DESCRIPTION
Medium-power voltage regulator diodes in hermetically sealed leaded glass
SOD66 (DO-41) packages. The diodes are available in the normalized E24
approx. ±5% tolerance range. The series consists of 33 types with nominal
working voltages from 3.6 to 75 V (BZV85-C3V6 to BZV85-C75).
Fig.1 Simplified outline (SOD66; DO-41) and symbol.
The diodes are type branded.
handbook, halfpage
MAM241
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Device mounted on a printed circuit-board with 1 cm
2
copper area per lead.
2. If the leads are kept at Ttp=55°C at 4 mm from body.
ELECTRICAL CHARACTERISTICS
Total series
T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
continuous forward current − 500 mA
I
ZSM
non-repetitive peak reverse current tp= 100 µs; square wave;
Tj=25°C prior to surge; see Fig.3
see Table
“Per type”
t
p
= 10 ms; half sinewave;
Tj=25°C prior to surge
see Table
“Per type”
P
tot
total power dissipation T
amb
=25°C; lead length 10 mm;
note 1
− 1W
note 2 − 1.3 W
P
ZSM
non-repetitive peak reverse power
dissipation
tp= 100 µs; square wave;
Tj=25°C prior to surge
− 60 W
T
stg
storage temperature −65 +200 °C
T
j
junction temperature − 200 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage IF= 50 mA; see Fig.4 1 V
Page 3
1999 May 11 3
Philips Semiconductors Product specification
Voltage regulator diodes BZV85 series
Per type
T
j
=25°C unless otherwise specified.
BZV85-
CXXX
WORKING
VOLTAGE
V
Z
(V)
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
at I
Ztest
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
see Figs 5 and 6
TEST
CURRENT
I
Ztest
(mA)
DIODE CAP.
Cd(pF)
at f = 1 MHz;
VR=0V
REVERSE
CURRENT at
REVERSE
VOLTAGE
NON-REPETITIVE
PEAK REVERSE CURRENT
I
ZSM
IR (µA)
V
R
(V)
at tp= 100 µs;
T
amb
=25°C
at tp= 10 ms;
T
amb
=25°C
MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. (A) MAX. (mA)
3V6
3.4 3.8 15 −3.5 −1.0 60 450 50 1.0 8.0 2000
3V9
3.7 4.1 15 −3.5 −1.0 60 450 10 1.0 8.0 1950
4V3
4.0 4.6 13 −2.7 0 50 450 5 1.0 8.0 1850
4V7
4.4 5.0 13 −2.0 +0.7 45 300 3 1.0 8.0 1800
5V1
4.8 5.4 10 −0.5 +2.2 45 300 3 2.0 8.0 1750
5V6
5.2 6.0 7 0 2.7 45 300 2 2.0 8.0 1700
6V2
5.8 6.6 4 0.6 3.6 35 200 2 3.0 7.0 1620
6V8
6.4 7.2 3.5 1.3 4.3 35 200 2 4.0 7.0 1550
7V5
7.0 7.9 3 2.5 5.5 35 150 1 4.5 5.0 1500
8V2
7.7 8.7 5 3.1 6.1 25 150 0.7 5.0 5.0 1400
9V1
8.5 9.6 5 3.8 7.2 25 150 0.7 6.5 4.0 1340
10
9.4 10.6 8 4.7 8.5 25 90 0.2 7.0 4.0 1200
11
10.4 11.6 10 5.3 9.3 20 85 0.2 7.7 3.0 1100
12
11.4 12.7 10 6.3 10.8 20 85 0.2 8.4 3.0 1000
13
12.4 14.1 10 7.4 12.0 20 80 0.2 9.1 3.0 900
15
13.8 15.6 15 8.9 13.6 15 75 0.05 10.5 2.5 760
16
15.3 17.1 15 10.7 15.4 15 75 0.05 11.0 1.75 700
18
16.8 19.1 20 11.8 17.1 15 70 0.05 12.5 1.75 600
20
18.8 21.2 24 13.6 19.1 10 60 0.05 14.0 1.75 540
22
20.8 23.3 25 16.6 22.1 10 60 0.05 15.5 1.5 500
24
22.8 25.6 30 18.3 24.3 10 55 0.05 17 1.5 450
27 25.1 28.9 40 20.1 27.5 8 50 0.05 19 1.2 400
30 28.0 32.0 45 22.4 32.0 8 50 0.05 21 1.2 380
Page 4
1999 May 11 4
Philips Semiconductors Product specification
Voltage regulator diodes BZV85 series
33 31.0 35.0 45 24.8 35.0 8 45 0.05 23 1.0 350
36 34.0 38.0 50 27.2 39.9 8 45 0.05 25 0.9 320
39 37.0 41.0 60 29.6 43.0 6 45 0.05 27 0.8 296
43 40.0 46.0 75 34.0 48.3 6 40 0.05 30 0.7 270
47 44.0 50.0 100 37.4 52.5 4 40 0.05 33 0.6 246
51 48.0 54.0 125 40.8 56.5 4 40 0.05 36 0.5 226
56 52.0 60.0 150 46.8 63.0 4 40 0.05 39 0.4 208
62 58.0 66.0 175 52.2 72.5 4 35 0.05 43 0.4 186
68 64.0 72.0 200 60.5 81.0 4 35 0.05 48 0.35 171
75 70.0 80.0 225 66.5 88.0 4 35 0.05 53 0.3 161
BZV85-
CXXX
WORKING
VOLTAGE
V
Z
(V)
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
at I
Ztest
TEMP. COEFF.
SZ (mV/K)
at I
Ztest
see Figs 5 and 6
TEST
CURRENT
I
Ztest
(mA)
DIODE CAP.
Cd(pF)
at f = 1 MHz;
VR=0V
REVERSE
CURRENT at
REVERSE
VOLTAGE
NON-REPETITIVE
PEAK REVERSE CURRENT
I
ZSM
IR (µA)
V
R
(V)
at tp= 100 µs;
T
amb
=25°C
at tp= 10 ms;
T
amb
=25°C
MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. (A) MAX. (mA)
Page 5
1999 May 11 5
Philips Semiconductors Product specification
Voltage regulator diodes BZV85 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board with 1 cm2 copper area per lead.
GRAPHICAL DATA
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point lead length 4 mm; see Fig.2 110 K/W
R
th j-a
thermal resistance from junction to ambient lead length10 mm; note 1 175 K/W
Fig.2 Thermal resistance from junction to tie-point with a lead length of 4 mm.
handbook, full pagewidth
10
−2
10
−1
11010
2103
10
4
MBG929
1
10
10
2
10
3
tp (ms)
t
p
t
p
T
T
δ =
δ = 1
0.02
0.01
0
0.75
0.50
0.33
0.20
0.10
0.05
R
th j-tp
(K/W)
Page 6
1999 May 11 6
Philips Semiconductors Product specification
Voltage regulator diodes BZV85 series
Fig.3 Non-repetitive peak reverse current as a
function of the nominal working voltage.
handbook, halfpage
MBG802
10
2
10 V
Znom
(V)
I
ZSM
(A)
10
110
2
10
−1
1
(1)
(2)
(1) tp=10µs; half sinewave; T
amb
=25°C.
(2) tp= 10 ms; half sinewave; T
amb
=25°C.
Fig.4 Forward current as a function of forward
voltage; typical values.
handbook, halfpage
0 1.0
300
0
100
200
MBG925
0.5
VF (V)
I
F
(mA)
(1) (2)
(1) Tj= 200 °C.
(2) Tj=25°C.
Fig.5 Temperature coefficient as a function of
working current; typical values.
BZV85-C3V6 to C10.
Tj=25to150°C.
For types above 7.5 V the temperature coefficient is independent
of current; see Table “Per type”.
handbook, halfpage
050
10
0
−5
5
MBG926
25
IZ (mA)
S
Z
(mV/K)
4V7
4V3
3V6
3V9
10
9V1
8V2
7V5
6V8
6V2
5V6
5V1
Fig.6 Temperature coefficient as a function of
nominal working voltage.
handbook, halfpage
100
0
10
2
MBG800
10 V
Znom
(V)
S
Z
(mV/K)
1
20
40
60
80
(2)
(1)
(3)
IZ=I
Ztest
; Tj=25to150°C.
(1) Maximum values.
(2) Typical values.
(3) Minimum values.
Page 7
1999 May 11 7
Philips Semiconductors Product specification
Voltage regulator diodes BZV85 series
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
Note
1. The marking band indicates the cathode.
SOD66 DO-41
97-06-20
Hermetically sealed glass package; axial leaded; 2 leads
SOD66
UNIT
b
max.
mm
0.81
D
max.
G
1
max.
284.82.6
L
min.
DIMENSIONS (mm are the original dimensions)
G
1
LD L
b
(1)
0 2 4 mm
scale
k
a
Page 8
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Internet: http://www.semiconductors.philips.com
1999 64
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Printed in The Netherlands 115002/00/02/pp8 Date of release: 1999 May 11 Document order number: 9397 750 05929
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