Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
1/3 page (Datasheet)
M3D054
BZV80; BZV81
Voltage reference diodes
Product specification
Supersedes data of April 1992
1996 Mar 21
Page 2
Philips Semiconductors Product specification
Voltage reference diodes BZV80; BZV81
FEATURES
• Reference voltage range:
DESCRIPTION
Leadless voltage reference diode in a small glass SOD80 SMD package.
5.89 to 6.51 V (nom. 6.20 V)
• Low temperature coefficient range:
max. 0.005 to 0.01 %/K.
handbook, 4 columns
ka
APPLICA TION
• Voltage reference sources.
MAM215
Fig.1 Simplified outline (SOD80) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
Z
P
tot
T
stg
T
j
T
amb
working current − 50 mA
total power dissipation T
=50°C; note 1 − 400 mW
amb
storage temperature −65 +200 °C
junction temperature − 200 °C
operating ambient temperature −20 +80 °C
Note
1. Device mounted on a FR4 printed-circuit board.
1996 Mar 21 2
Page 3
Philips Semiconductors Product specification
Voltage reference diodes BZV80; BZV81
ELECTRICAL CHARACTERISTICS
T
= 25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. NOM. MAX. UNIT
V
ref
∆V
ref
S
temperature coefficient IZ= 7.5 mA: notes 1 and 2
Z
r
dif
Notes
1. The quoted values of ∆V
the differential resistance r
a) Each change of IZ can result in a maximum change of ∆V
b) The temperature coefficient of the reference voltage SZ is also a function of IZ. However, for these reference
2. The temperature coefficient of the reference voltage is obtained from the following formula:
S
reference voltage IZ= 7.5 mA 5.89 6.20 6.51 V
reference voltage excursion IZ= 7.5 mA; test points for
T
: −20; +25; +55; +80 °C;
BZV80 −−62 mV
BZV81 −−31 mV
amb
notes 1 and 2
BZV80 −−0.01 %/K
BZV81 − 0.005 %/K
differential resistance IZ= 7.5 mA −−15 Ω
ref
taking into account that r
are based on a constant current IZ. Two factors can cause ∆V
and the temperature coefficient SZ.
dif
is max. 15 Ω.
dif
as follows: ∆V
ref
(mV) = ∆IZ(mA) × 15 Ω
ref
to change with IZ, namely
ref
diodes SZ varies max.±0.05 mV/K or±0.001%/K when IZ is between 6 and 10 mA, so this effect can be neglected
in practice for these types.
V
ref1Vref2
--------------------------------------
Z
T
amb2Tamb1
–
–
100
-------------------V
ref nom
%/K×=
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 300 K/W
thermal resistance from junction to ambient note 1 380 K/W
Note
1. Device mounted on a FR4 printed-circuit board.
UNIT
1996 Mar 21 3
Page 4
Philips Semiconductors Product specification
Voltage reference diodes BZV80; BZV81
PACKAGE OUTLINE
handbook, full pagewidth
1.7
O
1.5
0.3 0.3
Dimensions in mm.
The cathode is indicated by a yellow band.
3.7
3.3
MBA388 - 2
Fig.2 SOD80.
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Mar 21 4
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