Page 1
DATA SH EET
Product specification
Supersedes data of 1996 Oct 28
1999 May 11
DISCRETE SEMICONDUCTORS
BZV49 series
Voltage regulator diodes
ook, halfpage
M3D109
Page 2
1999 May 11 2
Philips Semiconductors Product specification
Voltage regulator diodes BZV49 series
FEATURES
• Total power dissipation: max. 1 W
• Tolerance series: approx. ±5%
• Working voltage range:
nom. 2.4 to 75 V (E24 range)
• Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
• General regulation functions.
DESCRIPTION
Medium-power voltage regulator
diodes in a SOT89 plastic SMD
package.
The diodes are available in the
normalized E24 approx. ±5%
tolerance range. The series consists
of 37 types with nominal working
voltages from 2.4 to 75 V
(BZV49-C2V4 to BZV49-C75).
PINNING
PIN DESCRIPTION
1 anode
2 anode
3 cathode
Fig.1 Simplified outline (SOT89) and symbol.
handbook, halfpage
132
Bottom view
MAM244
3
1
2
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BZV49-C2V4 2Y4 BZV49-C6V2 6Y2 BZV49-C16 16Y BZV49-C43 43Y
BZV49-C2V7 2Y7 BZV49-C6V8 6Y8 BZV49-C18 18Y BZV49-C47 47Y
BZV49-C3V0 3Y0 BZV49-C7V5 7Y5 BZV49-C20 20Y BZV49-C51 51Y
BZV49-C3Y3 3Y3 BZV49-C8V2 8Y2 BZV49-C22 22Y BZV49-C56 56Y
BZV49-C3V6 3Y6 BZV49-C9V1 9Y1 BZV49-C24 24Y BZV49-C62 62Y
BZV49-C3V9 3Y9 BZV49-C10 10Y BZV49-C27 27Y BZV49-C68 68Y
BZV49-C4V3 4Y3 BZV49-C11 11Y BZV49-C30 30Y BZV49-C75 75Y
BZV49-C4V7 4Y7 BZV49-C12 12Y BZV49-C33 33Y −−
BZV49-C5V1 5Y1 BZV49-C13 13Y BZV49-C36 36Y −−
BZV49-C5V6 5Y6 BZV49-C15 15Y BZV49-C39 39Y −−
Page 3
1999 May 11 3
Philips Semiconductors Product specification
Voltage regulator diodes BZV49 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm
2
; thickness = 0.7 mm.
ELECTRICAL CHARACTERISTICS
Total series
T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
continuous forward current − 250 mA
I
ZSM
non-repetitive peak reverse current tp= 100 µs; square wave;
Tj=25°C prior to surge
see Table
“Per type”
P
tot
total power dissipation T
amb
=25°C; note 1 − 1W
P
ZSM
non-repetitive peak reverse power
dissipation
tp= 100 µs; square wave;
Tj=25°C prior to surge; see Fig.2
− 40 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage IF= 50 mA; see Fig.3 1 V
Page 4
1999 May 11 4
Philips Semiconductors Product specification
Voltage regulator diodes BZV49 series
Per type
T
j
=25°C unless otherwise specified.
BZV49-
CXXX
WORKING
VOLTAGE
V
Z
(V)
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
at I
Ztest
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
see Figs 4 and 5
TEST
CURRENT
I
Ztest
(mA)
DIODE CAP.
Cd(pF)
at f = 1 MHz;
at VR=0V
REVERSE
CURRENT at
REVERSE
VOLTAGE
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A)
at tp= 100 µs;
T
amb
=25°C
IR (µA)
V
R
(V)
MIN. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. MAX.
2V4
2.2 2.6 70 100 −3.5 −1.6 0 5 450 50 1.0 6.0
2V7
2.5 2.9 75 100 −3.5 −2.0 0 5 450 20 1.0 6.0
3V0
2.8 3.2 80 95 −3.5 −2.1 0 5 450 10 1.0 6.0
3V3
3.1 3.5 85 95 −3.5 −2.4 0 5 450 5 1.0 6.0
3V6
3.4 3.8 85 90 −3.5 −2.4 0 5 450 5 1.0 6.0
3V9
3.7 4.1 85 90 −3.5 −2.5 0 5 450 3 1.0 6.0
4V3
4.0 4.6 80 90 −3.5 −2.5 0 5 450 3 1.0 6.0
4V7
4.4 5.0 50 80 −3.5 −1.4 +0.2 5 300 3 2.0 6.0
5V1
4.8 5.4 40 60 −2.7 −0.8 +1.2 5 300 2 2.0 6.0
5V6
5.2 6.0 15 40 −2.0 +1.2 +2.5 5 300 1 2.0 6.0
6V2
5.8 6.6 6 10 0.4 2.3 3.7 5 200 3 4.0 6.0
6V8
6.4 7.2 6 15 1.2 3.0 4.5 5 200 2 4.0 6.0
7V5
7.0 7.9 6 15 2.5 4.0 5.3 5 150 1 5.0 4.0
8V2
7.7 8.7 6 15 3.2 4.6 6.2 5 150 0.7 5.0 4.0
9V1
8.5 9.6 6 15 3.8 5.5 7.0 5 150 0.5 6.0 3.0
10
9.4 10.6 8 20 4.5 6.4 8.0 5 90 0.2 7.0 3.0
11
10.4 11.6 10 20 5.4 7.4 9.0 5 85 0.1 8.0 2.5
12
11.4 12.7 10 25 6.0 8.4 10.0 5 85 0.1 8.0 2.5
13
12.4 14.1 10 30 7.0 9.4 11.0 5 80 0.1 8.0 2.5
15
13.8 15.6 10 30 9.2 11.4 13.0 5 75 0.05 10.5 2.0
16
15.3 17.1 10 40 10.4 12.4 14.0 5 75 0.05 11.2 1.5
18
16.8 19.1 10 45 12.4 14.4 16.0 5 70 0.05 12.6 1.5
20
18.8 21.2 15 55 14.4 16.4 18.0 5 60 0.05 14.0 1.5
Page 5
1999 May 11 5
Philips Semiconductors Product specification
Voltage regulator diodes BZV49 series
22
20.8 23.3 20 55 16.4 18.4 20.0 5 60 0.05 15.4 1.25
24
22.8 25.6 25 70 18.4 20.4 22.0 5 55 0.05 16.8 1.25
27 25.1 28.9 25 80 21.4 23.4 25.3 2 50 0.05 18.9 1.0
30 28.0 32.0 30 80 24.4 26.6 29.4 2 50 0.05 21.0 1.0
33 31.0 35.0 35 80 27.4 29.7 33.4 2 45 0.05 23.1 0.9
36 34.0 38.0 35 90 30.4 33.0 37.4 2 45 0.05 25.2 0.8
39 37.0 41.0 40 130 33.4 36.4 41.2 2 45 0.05 27.3 0.7
43 40.0 46.0 45 150 37.6 41.2 46.6 2 40 0.05 30.1 0.6
47 44.0 50.0 50 170 42.0 46.1 51.8 2 40 0.05 32.9 0.5
51 48.0 54.0 60 180 46.6 51.0 57.2 2 40 0.05 35.7 0.4
56 52.0 60.0 70 200 52.2 57.0 63.8 2 40 0.05 39.2 0.3
62 58.0 66.0 80 215 58.8 64.4 71.6 2 35 0.05 43.4 0.3
68 64.0 72.0 90 240 65.6 71.7 79.8 2 35 0.05 47.6 0.25
75 70.0 79.0 95 255 73.4 80.2 88.6 2 35 0.05 52.5 0.2
BZV49-
CXXX
WORKING
VOLTAGE
V
Z
(V)
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
at I
Ztest
TEMP. COEFF.
SZ (mV/K)
at I
Ztest
see Figs 4 and 5
TEST
CURRENT
I
Ztest
(mA)
DIODE CAP.
Cd(pF)
at f = 1 MHz;
at VR=0V
REVERSE
CURRENT at
REVERSE
VOLTAGE
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A)
at tp= 100 µs;
T
amb
=25°C
IR (µA)
V
R
(V)
MIN. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. MAX.
Page 6
1999 May 11 6
Philips Semiconductors Product specification
Voltage regulator diodes BZV49 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point 15 K/W
R
th j-a
thermal resistance from junction to ambient note 1 125 K/W
GRAPHICAL DATA
Fig.2 Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
handbook, halfpage
MBG801
10
3
1 duration (ms)
P
ZSM
(W)
10
10
2
10
−1
10
1
(1)
(2)
(1) Tj=25°C (prior to surge).
(2) Tj= 150 °C (prior to surge).
Fig.3 Forward current as a function of forward
voltage; typical values.
handbook, halfpage
0.6 1.0
300
100
0
200
MBG781
0.8
VF (V)
I
F
(mA)
Tj=25°C.
Page 7
1999 May 11 7
Philips Semiconductors Product specification
Voltage regulator diodes BZV49 series
Fig.4 Temperature coefficient as a function of working current; typical values.
handbook, full pagewidth
−3
1
MBG927
10
-3
10
-2
10
-1
1
IZ (A)
−2
0
−1
S
Z
(mV/K)
4V3
3V9
3V6
3V3
3V0
2V7
2V4
BZV49-C2V4 to C4V3.
T
j
=25to150°C.
Fig.5 Temperature coefficient as a function of
working current; typical values.
handbook, halfpage
02016
10
0
−5
5
MBG924
4812
I
Z
(mA)
S
Z
(mV/K)
4V7
10
9V1
8V2
7V5
6V8
6V2
5V6
5V1
BZV49-C4V7 to C10.
T
j
=25to150°C.
Page 8
1999 May 11 8
Philips Semiconductors Product specification
Voltage regulator diodes BZV49 series
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
DIMENSIONS (mm are the original dimensions)
SOT89
97-02-28
w M
e
1
e
E
H
E
B
0 2 4 mm
scale
b
3
b
2
b
1
c
D
L
A
Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89
123
UNIT
A
mm
1.6
1.4
0.48
0.35
c
0.44
0.37
D
4.6
4.4
E
2.6
2.4
H
E
4.25
3.75
e
3.0
w
0.13
e
1
1.5
L
min.
0.8
b
2
b
1
0.53
0.40
b
3
1.8
1.4
Page 9
1999 May 11 9
Philips Semiconductors Product specification
Voltage regulator diodes BZV49 series
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Page 10
1999 May 11 10
Philips Semiconductors Product specification
Voltage regulator diodes BZV49 series
NOTES
Page 11
1999 May 11 11
Philips Semiconductors Product specification
Voltage regulator diodes BZV49 series
NOTES
Page 12
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Internet: http://www.semiconductors.philips.com
1999 64
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Printed in The Netherlands 115002/00/03/pp12 Date of release: 1999 May 11 Document order number: 9397 750 05927
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