Datasheet BZT03-C9V1, BZT03-C91, BZT03-C8V2, BZT03-C390, BZT03-C39 Datasheet (Philips)

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Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D116
BZT03 series
Voltage regulator diodes
Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01
1996 Jun 11
Page 2
Philips Semiconductors Product specification
Voltage regulator diodes BZT03 series
FEATURES
Glass passivated
High maximum operating
DESCRIPTION
Rugged glass SOD57 package, using a high temperature alloyed
construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
temperature
Low leakage current
Excellent stability
Zener working voltage range:
ka
2/3 page (Datasheet)
7.5 to 270 V for 38 types
Transient suppressor stand-off
MAM204
voltage range:
6.2 to 430 V for 45 types
Fig.1 Simplified outline (SOD57) and symbol.
Available in ammo-pack.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
P
tot
total power dissipation Ttp=25°C; lead length 10 mm; see Fig.2 3.25 W
T
=45°C; see Fig.2;
amb
1.30 W
PCB mounted (see Fig.6)
P
ZRM
repetitive peak reverse power
10 W
dissipation
P
P
T T
ZSM
RSM
stg j
non-repetitive peak reverse power dissipation
non-repetitive peak reverse power dissipation
tp= 100 µs; square pulse; Tj=25°C prior to surge; see Fig.3
10/1000 µs exponential pulse (see Fig.4); Tj=25°C prior to surge
600 W
300 W
storage temperature 65 +175 °C junction temperature 65 +175 °C
1996 Jun 11 2
Page 3
Philips Semiconductors Product specification
Voltage regulator diodes BZT03 series
ELECTRICAL CHARACTERISTICS Total series
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
Per type when used as voltage regulator diodes
T
=25°C unless otherwise specified.
j
forward voltage IF= 0.5 A; see Fig.5 1.2 V
TYPE
No.
SUFFIX
(1)
WORKING VOLTAGE
VZ (V) at I
Z
DIFFERENTIAL
RESISTANCE
r
()atI
dif
TEMPERATURE
COEFFICIENT
SZ (%/K) at I
Z
Z
TEST
CURRENT
IZ (mA)
REVERSE CURRENT
at REVERSE VOLTAGE
IR (µA)
VR (V)
MIN. NOM. MAX. TYP. MAX. MIN. MAX. MAX.
C7V5 7.0 7.5 7.9 1 2 0.00 0.07 100 750 5.6 C8V2 7.7 8.2 8.7 1 2 0.03 0.08 100 600 6.2 C9V1 8.5 9.1 9.6 2 4 0.03 0.08 50 20 6.8 C10
C11 C12 C13 C15 C16 C18 C20 C22 C24 C27 C30 C33 C36 C39 C43 C47 C51 C56 C62 C68 C75 C82 C91
9.4 10 10.6 2 4 0.05 0.09 50 10 7.5
10.4 11 11.6 4 7 0.05 0.10 50 4 8.2
11.4 12 12.7 4 7 0.05 0.10 50 3 9.1
12.4 13 14.1 5 10 0.05 0.10 50 2 10
13.8 15 15.6 5 10 0.05 0.10 50 1 11
15.3 16 17.1 6 15 0.06 0.11 25 1 12
16.8 18 19.1 6 15 0.06 0.11 25 1 13
18.8 20 21.2 6 15 0.06 0.11 25 1 15
20.8 22 23.3 6 15 0.06 0.11 25 1 16
22.8 24 25.6 7 15 0.06 0.11 25 1 18
25.1 27 28.9 7 15 0.06 0.11 25 1 20 28 30 32 8 15 0.06 0.11 25 1 22 31 33 35 8 15 0.06 0.11 25 1 24 34 36 38 21 40 0.06 0.11 10 1 27 37 39 41 21 40 0.06 0.11 10 1 30 40 43 46 24 45 0.07 0.12 10 1 33 44 47 50 24 45 0.07 0.12 10 1 36 48 51 54 25 60 0.07 0.12 10 1 39 52 56 60 25 60 0.07 0.12 10 1 43 58 62 66 25 80 0.08 0.13 10 1 47 64 68 72 25 80 0.08 0.13 10 1 51 70 75 79 30 100 0.08 0.13 10 1 56 77 82 87 30 100 0.08 0.13 10 1 62 85 91 96 60 200 0.09 0.13 5 1 68
1996 Jun 11 3
Page 4
Philips Semiconductors Product specification
Voltage regulator diodes BZT03 series
TYPE
No.
SUFFIX
(1)
WORKING VOLTAGE
VZ (V) at I
Z
DIFFERENTIAL
RESISTANCE
r
()atI
dif
TEMPERATURE
COEFFICIENT
SZ (%/K) at I
Z
Z
TEST
CURRENT
IZ (mA)
REVERSE CURRENT
at REVERSE VOLTAGE
IR (µA)
MIN. NOM. MAX. TYP. MAX. MIN. MAX. MAX.
C100 C110 C120 C130 C150 C160 C180 C200 C220 C240 C270
94 100 106 60 200 0.09 0.13 5 1 75
104 110 116 80 250 0.09 0.13 5 1 82
114 120 127 80 250 0.09 0.13 5 1 91 124 130 141 110 300 0.09 0.13 5 1 100 138 150 156 130 300 0.09 0.13 5 1 110 153 160 171 150 350 0.09 0.13 5 1 120 168 180 191 180 400 0.09 0.13 5 1 130 188 200 212 200 500 0.09 0.13 5 1 150 208 220 233 350 750 0.09 0.13 2 1 160 228 240 256 400 850 0.09 0.13 2 1 180 251 270 289 450 1000 0.09 0.13 2 1 200
Note
1. To complete the type number the suffix is added to the basic type number, e.g. BZT03-C100.
VR (V)
1996 Jun 11 4
Page 5
Philips Semiconductors Product specification
Voltage regulator diodes BZT03 series
Per type when used as transient suppressor diodes
T
= 25°C unless otherwise specified.
j
REVERSE
CURRENT at
STAND-OFF
VOLTAGE
(µA)
I
R
at V
(V)
R
TYPE
NUMBER
REVERSE
BREAKDOWN
VOLTAGE
V
(V)
(BR)R
at I
test
MIN. MIN. MAX. MAX. MAX.
TEMPERATURE
COEFFICIENT
SZ(%/K) at I
test
TEST
CURRENT
I
test
(mA)
CLAMPING
V
(CL)R
VOLTAGE
at I
(V)
note 1
RSM
(A)
BZT03-C7V5 7.0 0.00 0.07 100 11.3 26.5 1500 6.2 BZT03-C8V2 7.7 0.03 0.08 100 12.3 24.4 1200 6.8 BZT03-C9V1 8.5 0.03 0.08 50 13.3 22.7 100 7.5 BZT03-C10
BZT03-C11 BZT03-C12 BZT03-C13 BZT03-C15 BZT03-C16 BZT03-C18 BZT03-C20 BZT03-C22 BZT03-C24 BZT03-C27 BZT03-C30 BZT03-C33 BZT03-C36 BZT03-C39 BZT03-C43 BZT03-C47 BZT03-C51 BZT03-C56 BZT03-C62 BZT03-C68 BZT03-C75 BZT03-C82 BZT03-C91 BZT03-C100 BZT03-C110 BZT03-C120 BZT03-C130 BZT03-C150 BZT03-C160
9.4 0.05 0.09 50 14.8 20.3 20 8.2
10.4 0.05 0.10 50 15.7 19.1 5 9.1
11.4 0.05 0.10 50 17.0 17.7 5 10
12.4 0.05 0.10 50 18.9 15.9 5 11
13.8 0.05 0.10 50 20.9 14.4 5 12
15.3 0.06 0.11 25 22.9 13.1 5 13
16.8 0.06 0.11 25 25.6 11.7 5 15
18.8 0.06 0.11 25 28.4 10.6 5 16
20.8 0.06 0.11 25 31.0 9.7 5 18
22.8 0.06 0.11 25 33.8 8.9 5 20
25.1 0.06 0.11 25 38.1 7.9 5 22 28 0.06 0.11 25 42.2 7.1 5 24 31 0.06 0.11 25 46.2 6.5 5 27 34 0.06 0.11 10 50.1 6.0 5 30 37 0.06 0.11 10 54.1 5.5 5 33 40 0.07 0.12 10 60.7 4.9 5 36 44 0.07 0.12 10 65.5 4.6 5 39 48 0.07 0.12 10 70.8 4.2 5 43 52 0.07 0.12 10 78.6 3.8 5 47 58 0.08 0.13 10 86.5 3.5 5 51 64 0.08 0.13 10 94.4 3.2 5 56 70 0.08 0.13 10 103.5 2.9 5 62 77 0.08 0.13 10 114.0 2.6 5 68 85 0.09 0.13 5 126 2.4 5 75 94 0.09 0.13 5 139 2.2 5 82
104 0.09 0.13 5 152 2.0 5 91
114 0.09 0.13 5 167 1.8 5 100 124 0.09 0.13 5 185 1.6 5 110 138 0.09 0.13 5 204 1.5 5 120 153 0.09 0.13 5 224 1.3 5 130
1996 Jun 11 5
Page 6
Philips Semiconductors Product specification
Voltage regulator diodes BZT03 series
REVERSE
CURRENT at
STAND-OFF
VOLTAGE
(µA)
I
R
at V
TYPE
NUMBER
BZT03-C180 BZT03-C200
REVERSE
BREAKDOWN
VOLTAGE
(V)
V
(BR)R
at I
test
MIN. MIN. MAX. MAX. MAX.
TEMPERATURE
COEFFICIENT
SZ(%/K) at I
test
TEST
CURRENT
I
test
(mA)
CLAMPING
V
(CL)R
VOLTAGE
at I
(V)
note 1
RSM
(A)
168 0.09 0.13 5 249 1.2 5 150 188 0.09 0.13 5 276 1.1 5 160
BZT03-C220 208 0.09 0.13 2 305 1.0 5 180 BZT03-C240 228 0.09 0.13 2 336 0.9 5 200 BZT03-C270 251 0.09 0.13 2 380 0.8 5 220 BZT03-C300 280 0.09 0.13 2 419 0.72 5 240 BZT03-C330 310 0.09 0.13 2 459 0.65 5 270 BZT03-C360 340 0.09 0.13 2 498 0.60 5 300 BZT03-C390 370 0.09 0.13 2 537 0.56 5 330 BZT03-C430 400 0.09 0.13 2 603 0.50 5 360 BZT03-C470 440 0.09 0.13 2 655 0.45 5 390 BZT03-C510 480 0.09 0.13 2 707 0.42 5 430
Note
1. Non-repetitive peak reverse current in accordance with
“IEC 60-1, Section 8”
(10/1000 µs pulse); see Fig.4.
R
(V)
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R R
th j-tp th j-a
thermal resistance from junction to tie-point lead length = 10 mm 46 K/W thermal resistance from junction to ambient note 1 100 K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 µm, see Fig.6. For more information please refer to the
‘General Part of Handbook SC01’
.
1996 Jun 11 6
Page 7
Philips Semiconductors Product specification
Voltage regulator diodes BZT03 series
GRAPHICAL DATA
handbook, halfpage
4
P
tot
(W)
3
2
1
0
0 200
Solid line: tie-point temperature; lead length = 10 mm. Dotted line: ambient temperature; PCB mounted as shown in Fig 6.
100
MBH534
T (°C)
Fig.2 Maximum total power dissipation as a
function of temperature.
4
10
handbook, halfpage
P
ZSM (W)
3
10
2
10
10
2
10
Tj=25°C prior to surge.
1
10
1tp (ms)
Fig.3 Maximum non-repetitive peak reverse
power dissipation as a function of pulse duration (square pulse).
MBH535
10
I
handbook, halfpage
RSM
(%)
100
90
50
10
t
1
t
2
In accordance with t1=10µs. t2= 1000 µs.
“IEC 60-1, Section 8”
.
Fig.4 Non-repetitive peak reverse current
pulse definition.
MGD521
handbook, halfpage
t
3
I
F
(A)
2
1
0
02
Tj=25°C.
1
MBH536
VF (V)
Fig.5 Forward current as a function of forward
voltage; typical values.
1996 Jun 11 7
Page 8
Philips Semiconductors Product specification
Voltage regulator diodes BZT03 series
handbook, halfpage
Dimensions in mm.
50 25
7
50
2
3
MGA200
Fig.6 Device mounted on a printed-circuit board.
1996 Jun 11 8
Page 9
Philips Semiconductors Product specification
Voltage regulator diodes BZT03 series
PACKAGE OUTLINE
handbook, full pagewidth
3.81 max
Dimensions in mm. The marking band indicates the cathode.
ka
4.57 max
28 min28 min
0.81 max
MBC880
Fig.7 SOD57.
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Jun 11 9
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