Datasheet BZM55C8V2, BZM55C7V5, BZM55C75, BZM55C6V8, BZM55C6V2 Datasheet (Vishay Telefunken)

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Page 1
Silicon Epitaxial Planar Z–Diodes
Features
D
D
Hermetic sealed parts
D
Fits onto SOD 323 / SOT 23 footprints
D
Electrical data identical with the devices BZT55C... / TZMC...
D
Very sharp reverse characteristic
D
Low reverse current level
D
Very high stability
D
Low noise
D
Available with tighter tolerances
Applications
Voltage stabilization
BZM55C...
Vishay Telefunken
96 12315
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit Power dissipation Z–current I Junction temperature T Storage temperature range T
R
thJA
x
300K/W
P
V
Z
j
stg
500 mW
PV/V
Z
175
–65...+175
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit Junction ambient mounted on epoxy–glass hard tissue, Fig. 1 R Junction tie point 35mm copper clad, 0.9 mm2 copper area per electrode R
thJA thJL
500 K/W 300 K/W
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=200mA V
F
mA
° °
1.5 V
C C
Document Number 85598 Rev. 3, 01-Apr-99 1 (6)
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Page 2
BZM55C...
Vishay Telefunken
Type V
ZnomIZT
BZM55C... V mA V
for VZT and r
1)
r
zjT
zjk
W W
at IZK IR and IR at V
mA
m
A
2)
m
A
R
TK
V %/K 2 V 4 2.4 5 2.28 to 2.56 < 85 < 600 1 < 100 < 50 1 –0.09 to –0.06 2 V 7 2.7 5 2.5 to 2.9 < 85 < 600 1 < 10 < 50 1 –0.09 to –0.06 3 V 0 3.0 5 2.8 to 3.2 < 90 < 600 1 < 4 < 40 1 –0.08 to –0.05 3 V 3 3.3 5 3.1 to 3.5 < 90 < 600 1 < 2 < 40 1 –0.08 to –0.05 3 V 6 3.6 5 3.4 to 3.8 < 90 < 600 1 < 2 < 40 1 –0.08 to –0.05 3 V 9 3.9 5 3.7 to 4.1 < 90 < 600 1 < 2 < 40 1 –0.08 to –0.05 4 V 3 4.3 5 4.0 to 4.6 < 90 < 600 1 < 1 < 20 1 –0.06 to –0.03 4 V 7 4.7 5 4.4 to 5.0 < 80 < 600 1 < 0.5 < 10 1 –0.05 to +0.02 5 V 1 5.1 5 4.8 to 5.4 < 60 < 550 1 < 0.1 < 2 1 –0.02 to +0.02 5 V 6 5.6 5 5.2 to 6.0 < 40 < 450 1 < 0.1 < 2 1 –0.05 to +0,05 6 V 2 6.2 5 5.8 to 6.6 < 10 < 200 1 < 0.1 < 2 2 0.03 to 0.06 6 V 8 6.8 5 6.4 to 7.2 < 8 < 150 1 < 0.1 < 2 3 0.03 to 0.07 7 V 5 7.5 5 7.0 to 7.9 < 7 < 50 1 < 0.1 < 2 5 0.03 to 0.07 8 V 2 8.2 5 7.7 to 8.7 < 7 < 50 1 < 0.1 < 2 6.2 0.03 to 0.08 9 V 1 9.1 5 8.5 to 9.6 < 10 < 50 1 < 0.1 < 2 6.8 0.03 to 0.09
10 10 5 9.4 to 10.6 < 15 < 70 1 < 0.1 < 2 7.5 0.03 to 0.1 11 11 5 10.4 to 11.6 < 20 < 70 1 < 0.1 < 2 8.2 0.03 to 0.11 12 12 5 1 1.4 to 12.7 < 20 < 90 1 < 0.1 < 2 9.1 0.03 to 0.11 13 13 5 12.4 to 14.1 < 26 < 110 1 < 0.1 < 2 10 0.03 to 0.11 15 15 5 13.8 to 15.6 < 30 < 110 1 < 0.1 < 2 11 0.03 to 0.11 16 16 5 15.3 to 17.1 < 40 < 170 1 < 0.1 < 2 12 0.03 to 0.11 18 18 5 16.8 to 19.1 < 50 < 170 1 < 0.1 < 2 13 0.03 to 0.11 20 20 5 18.8 to 21.2 < 55 < 220 1 < 0.1 < 2 15 0.03 to 0.11 22 22 5 20.8 to 23.3 < 55 < 220 1 < 0.1 < 2 16 0.04 to 0.12 24 24 5 22.8 to 25.6 < 80 < 220 1 < 0.1 < 2 18 0.04 to 0.12 27 27 5 25.1 to 28.9 < 80 < 220 1 < 0.1 < 2 20 0.04 to 0.12 30 30 5 28 to 32 < 80 < 220 1 < 0.1 < 2 22 0.04 to 0.12 33 33 5 31 to 35 < 80 < 220 1 < 0.1 < 2 24 0.04 to 0.12 36 36 5 34 to 38 < 80 < 220 1 < 0.1 < 2 27 0.04 to 0.12 39 39 2.5 37 to 41 < 90 < 500 1 < 0.1 < 5 30 0.04 to 0.12 43 43 2.5 40 to 46 < 90 < 600 0.5 < 0.1 < 5 33 0.04 to 0.12 47 47 2.5 44 to 50 < 110 < 700 0.5 < 0.1 < 5 36 0.04 to 0.12 51 51 2.5 48 to 54 < 125 < 700 0.5 < 0.1 < 10 39 0.04 to 0.12 56 56 2.5 52 to 60 < 135 < 1000 0.5 < 0.1 < 10 43 0.04 to 0.12 62 62 2.5 58 to 66 < 150 < 1000 0.5 < 0.1 < 10 47 0.04 to 0.12 68 68 2.5 64 to 72 < 200 < 1000 0.5 < 0.1 < 10 51 0.04 to 0.12 75 75 2.5 70 to 79 < 250 < 1500 0.5 < 0.1 < 10 56 0.04 to 0.12
VZ
1)
tp/T x 100ms, tighter tolerances available on request.
2)
at Tj= 150°C
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Page 3
Characteristics (Tj = 25_C unless otherwise specified)
)
BZM55C...
Vishay Telefunken
600
500
400
300
200
100
tot
P – Total Power Dissipation ( mW )
0
0 40 80 120 160
T
95 9602
– Ambient Temperature ( °C )
amb
Figure 1. Total Power Dissipation vs.
Ambient Temperature
1000
Tj=25°C
100
IZ=5mA
10
Z
V – Voltage Change ( mV )
D
1
0 5 10 15 20
95 9598
VZ – Z-Voltage ( V )
Figure 2. Typical Change of Working Voltage
under Operating Conditions at T
amb
200
=25°C
1.3
1.2
1.1
1.0
Ztn
0.9
V – Relative Voltage Change
V
Ztn=VZt/VZ
(25°C)
TKVZ=10 10–4/K
–4
/K
8 10
–4
6 10
/K
4 10–4/K
–4
/K
2 10
0
–4
–2 10 –4 10–4/K
/K
0.8 240
95 9599
–60 0 60 120 180
Tj – Junction Temperature ( °C )
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
15
–4
Z
10
5
IZ=5mA
0
VZ
–5
TK – Temperature Coefficient of V ( 10 /K
25
95 9600
0102030
VZ – Z-Voltage ( V )
40
50
Figure 4. Temperature Coefficient of Vz vs. Z–Voltage
200
150
VR=2V
Tj=25°C
100
50
D
C – Diode Capacitance ( pF )
95 9601
0
0 5 10 15
VZ – Z-Voltage ( V )
20
25
Figure 5. Diode Capacitance vs. Z–Voltage
Document Number 85598 Rev. 3, 01-Apr-99 3 (6)
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Page 4
BZM55C...
Vishay Telefunken
100
10
Tj=25°C
1
0.1
F
I – Forward Current ( mA )
0.01
0.001 0 0.2 0.4 0.6 0.8
95 9605
VF – Forward Voltage ( V )
Figure 6. Forward Current vs. Forward Voltage
100
80
P
=500mW
tot
T
=25°C
amb
60
40
Z
I – Z-Current ( mA )
20
0
04 81216
95 9604
VZ – Z-Voltage ( V )
Figure 7. Z–Current vs. Z–Voltage
1.0
20
50
P
=500mW
40
tot
T
=25°C
amb
30
20
Z
I – Z-Current ( mA )
10
0
15 20 25 30
95 9607
VZ – Z-Voltage ( V )
Figure 8. Z–Current vs. Z–Voltage
1000
W
IZ=1mA
100
5mA
10mA
10
Z
r – Differential Z-Resistance ( )
1
Tj=25°C
0 5 10 15 20
95 9606
VZ – Z-Voltage ( V )
Figure 9. Differential Z–Resistance vs. Z–Voltage
35
25
1000
tp/T=0.5
100
tp/T=0.2
10
tp/T=0.1
tp/T=0.02
tp/T=0.05
1
thp
Z – Thermal Resistance for Pulse Cond. (K/W)
–1
10
0
10
tp/T=0.01
Single Pulse
1
10
iZM=(–VZ+(V
2
+4rzjDT/Z
Z
R
=300K/W
thJA
D
T=T
jmax–Tamb
1/2
)
)/(2rzj)
thp
2
10
tp – Pulse Length ( ms )95 9603
Figure 10. Thermal Response
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Page 5
BZM55C...
Vishay Telefunken
0.152
25
10
95 10329
Figure 11. Board for R
0.71 1.3
0.355
2.5
24
definition (in mm)
thJA
1.27
9.9
Reflow Soldering
95 10330
1.2
0.6 0.6
1.2
2.4
Figure 12. Recommended foot pads (in mm)
Wave Soldering
95 10331
1.4
0.7 0.7
1.4
2.8
Figure 13. Recommended foot pads (in mm)
Dimensions in mm
96 12072
Document Number 85598 Rev. 3, 01-Apr-99 5 (6)
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Page 6
BZM55C...
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Rev. 3, 01-Apr-996 (6)
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