Datasheet BZD27-C6V2, BZD27-C82, BZD27-C75, BZD27-C6V8, BZD27-C220 Datasheet (Philips)

DATA SH EET

Product specification
Supersedes data of October 1991

1996 Jun 10

DISCRETE SEMICONDUCTORS

BZD27 series

Voltage regulator diodes

k, halfpage

M3D121

1996 Jun 10 2

Philips Semiconductors Product specification

Voltage regulator diodes BZD27 series

FEATURES

• Glass passivated

• High maximum operating

temperature

• Low leakage current

• Excellent stability

• Zener working voltage range:

3.6 to 270 V for 46 types

• Transient suppressor stand-off
voltage range: 6.2 to 430 V
for 45 types

• Supplied in 8 mm embossed tape.

DESCRIPTION

Cavity free cylindrical glass SOD87
package through Implotec

(1)

technology. This package is

hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.

(1) Implotec is a trademark of Philips.

Fig.1 Simplified outline (SOD87) and symbol.

handbook, 4 columns

MAM249

ka

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

P

tot

total power dissipation Ttp= 105 °C; see Figs 2 and 3

BZD27-C3V6 to -C6V8 − 1.7 W
BZD27-C7V5 to -C510 − 2.3 W

P

tot

total power dissipation PCB mounted (see Fig.7)

BZD27-C3V6 to -C6V8 T

amb

=60°C; see Fig.2 − 0.8 W

BZD27-C7V5 to -C510 T

amb

=55°C; see Fig.3 − 0.8 W

P

ZSM

non-repetitive peak reverse
power dissipation

tp= 100 µs; square pulse;

Tj=25°C prior to surge; see Figs.4 and 5
BZD27-C3V6 to -C6V8 − 300 W
BZD27-C7V5 to -C510 − 300 W

P

RSM

non-repetitive peak reverse
power dissipation

10/1000 µs exponential pulse (see Fig.8);

Tj=25°C prior to surge
BZD27-C7V5 to -C510 − 150 W

T

stg

storage temperature

BZD27-C3V6 to -C6V8 −65 +200 °C
BZD27-C7V5 to -C510 −65 +175 °C

T

j

junction temperature

BZD27-C3V6 to -C6V8 −65 +200 °C
BZD27-C7V5 to -C510 −65 +175 °C

1996 Jun 10 3

Philips Semiconductors Product specification

Voltage regulator diodes BZD27 series

ELECTRICAL CHARACTERISTICS
Total series

T

j

=25°C unless otherwise specified.

Per type when used as voltage regulator diodes

T

j

=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

F

forward voltage IF= 0.2 A; see Fig.6 − 1.2 V

TYPE

No.

SUFFIX

(1)

WORKING VOLTAGE

DIFFERENTIAL

RESISTANCE

TEMPERATURE

COEFFICIENT

TEST

CURRENT

REVERSE CURRENT

at REVERSE VOLTAGE

VZ (V) at I

Z

r

dif

(Ω)atI

Z

SZ (%/K) at I

Z

IZ (mA)

IR (µA)

VR (V)

MIN. NOM. MAX. TYP. MAX. MIN. MAX. MAX.

C3V6 3.4 3.6 3.8 4 8 −0.14 −0.04 100 100 1
C3V9 3.7 3.9 4.1 4 8 −0.14 −0.04 100 50 1
C4V3 4.0 4.3 4.6 4 7 −0.12 −0.02 100 25 1
C4V7 4.4 4.7 5.0 3 7 −0.10 0.00 100 10 1
C5V1 4.8 5.1 5.4 3 6 −0.08 −0.02 100 5 1
C5V6 5.2 5.6 6.0 2 4 −0.04 0.04 100 10 2
C6V2 5.8 6.2 6.6 2 3 −0.01 0.06 100 5 2
C6V8 6.4 6.8 7.2 1 3 0.00 0.07 100 10 3
C7V5 7.0 7.5 7.9 1 2 0.00 0.07 100 50 3
C8V2 7.7 8.2 8.7 1 2 0.03 0.08 100 10 3
C9V1 8.5 9.1 9.6 2 4 0.03 0.08 50 10 5
C10

9.4 10 10.6 2 4 0.05 0.09 50 7 7.5

C11

10.4 11 11.6 4 7 0.05 0.10 50 4 8.2

C12

11.4 12 12.7 4 7 0.05 0.10 50 3 9.1

C13

12.4 13 14.1 5 10 0.05 0.10 50 2 10

C15

13.8 15 15.6 5 10 0.05 0.10 50 1 11

C16

15.3 16 17.1 6 15 0.06 0.11 25 1 12

C18

16.8 18 19.1 6 15 0.06 0.11 25 1 13

C20

18.8 20 21.2 6 15 0.06 0.11 25 1 15

C22

20.8 22 23.3 6 15 0.06 0.11 25 1 16

C24

22.8 24 25.6 7 15 0.06 0.11 25 1 18

C27

25.1 27 28.9 7 15 0.06 0.11 25 1 20

C30

28 30 32 8 15 0.06 0.11 25 1 22

C33

31 33 35 8 15 0.06 0.11 25 1 24

C36

34 36 38 21 40 0.06 0.11 10 1 27

C39

37 39 41 21 40 0.06 0.11 10 1 30

C43

40 43 46 24 45 0.07 0.12 10 1 33

C47

44 47 50 24 45 0.07 0.12 10 1 36

1996 Jun 10 4

Philips Semiconductors Product specification

Voltage regulator diodes BZD27 series

Note

1. To complete the type number the suffix is added to the basic type number, e.g. BZD27-C51.

C51

48 51 54 25 60 0.07 0.12 10 1 39

C56

52 56 60 25 60 0.07 0.12 10 1 43

C62

58 62 66 25 80 0.08 0.13 10 1 47

C68

64 68 72 25 80 0.08 0.13 10 1 51

C75

70 75 79 30 100 0.08 0.13 10 1 56

C82

77 82 87 30 100 0.08 0.13 10 1 62

C91

85 91 96 60 200 0.09 0.13 5 1 68

C100

94 100 106 60 200 0.09 0.13 5 1 75

C110

104 110 116 80 250 0.09 0.13 5 1 82

C120

114 120 127 80 250 0.09 0.13 5 1 91

C130

124 130 141 110 300 0.09 0.13 5 1 100

C150

138 150 156 130 300 0.09 0.13 5 1 110

C160

153 160 171 150 350 0.09 0.13 5 1 120

C180

168 180 191 180 400 0.09 0.13 5 1 130

C200

188 200 212 200 500 0.09 0.13 5 1 150

C220

208 220 233 350 750 0.09 0.13 2 1 160

C240

228 240 256 400 850 0.09 0.13 2 1 180

C270

251 270 289 450 1000 0.09 0.13 2 1 200

TYPE

No.

SUFFIX

(1)

WORKING VOLTAGE

DIFFERENTIAL

RESISTANCE

TEMPERATURE

COEFFICIENT

TEST

CURRENT

REVERSE CURRENT

at REVERSE VOLTAGE

VZ (V) at I

Z

r

dif

(Ω)atI

Z

SZ (%/K) at I

Z

IZ (mA)

IR (µA)

VR (V)

MIN. NOM. MAX. TYP. MAX. MIN. MAX. MAX.

1996 Jun 10 5

Philips Semiconductors Product specification

Voltage regulator diodes BZD27 series

Per type when used as transient suppressor diodes

T

j

= 25°C unless otherwise specified.

TYPE

NUMBER

REVERSE

BREAKDOWN

VOLTAGE

TEMPERATURE

COEFFICIENT

TEST

CURREN

T

CLAMPING

VOLTAGE

REVERSE

CURRENT at

STAND-OFF

VOLTAGE

V

(BR)R

(V)

at I

test

SZ(%/K) at I

test

I

test

(mA)

V

(CL)R

(V)

at I

RSM

(A)

note 1

I

R

(µA)

at V

R

(V)

MIN. MIN. MAX. MAX. MAX.

BZD27-C7V5 7.0 0.00 0.07 100 11.3 13.3 1500 6.2
BZD27-C8V2 7.7 0.03 0.08 100 12.3 12.2 1200 6.8
BZD27-C9V1 8.5 0.03 0.08 50 13.3 11.3 100 7.5
BZD27-C10

9.4 0.05 0.09 50 14.8 10.1 20 8.2

BZD27-C11

10.4 0.05 0.10 50 15.7 9.6 5 9.1

BZD27-C12

11.4 0.05 0.10 50 17.0 8.8 5 10

BZD27-C13

12.4 0.05 0.10 50 18.9 7.9 5 11

BZD27-C15

13.8 0.05 0.10 50 20.9 7.2 5 12

BZD27-C16

15.3 0.06 0.11 25 22.9 6.6 5 13

BZD27-C18

16.8 0.06 0.11 25 25.6 5.9 5 15

BZD27-C20

18.8 0.06 0.11 25 28.4 5.3 5 16

BZD27-C22

20.8 0.06 0.11 25 31.0 4.8 5 18

BZD27-C24

22.8 0.06 0.11 25 33.8 4.4 5 20

BZD27-C27

25.1 0.06 0.11 25 38.1 3.9 5 22

BZD27-C30

28 0.06 0.11 25 42.2 3.6 5 24

BZD27-C33

31 0.06 0.11 25 46.2 3.2 5 27

BZD27-C36

34 0.06 0.11 10 50.1 3.0 5 30

BZD27-C39

37 0.06 0.11 10 54.1 2.8 5 33

BZD27-C43

40 0.07 0.12 10 60.7 2.5 5 36

BZD27-C47

44 0.07 0.12 10 65.5 2.3 5 39

BZD27-C51

48 0.07 0.12 10 70.8 2.1 5 43

BZD27-C56

52 0.07 0.12 10 78.6 1.9 5 47

BZD27-C62

58 0.08 0.13 10 86.5 1.7 5 51

BZD27-C68

64 0.08 0.13 10 94.4 1.6 5 56

BZD27-C75

70 0.08 0.13 10 103.5 1.5 5 62

BZD27-C82

77 0.08 0.13 10 114 1.3 5 68

BZD27-C91

85 0.09 0.13 5 126 1.2 5 75

BZD27-C100

94 0.09 0.13 5 139 1.1 5 82

BZD27-C110

104 0.09 0.13 5 152 1.0 5 91

BZD27-C120

114 0.09 0.13 5 167 0.90 5 100

BZD27-C130

124 0.09 0.13 5 185 0.81 5 110

BZD27-C150

138 0.09 0.13 5 204 0.73 5 120

BZD27-C160

153 0.09 0.13 5 224 0.67 5 130

1996 Jun 10 6

Philips Semiconductors Product specification

Voltage regulator diodes BZD27 series

Note

1. Non-repetitive peak reverse current in accordance with

“IEC 60-1, Section 8”

(10/1000 µs pulse); see Fig.8.

THERMAL CHARACTERISTICS

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.7.
For more information please refer to the

“General Part of associated Handbook”

.

BZD27-C180

168 0.09 0.13 5 249 0.60 5 150

BZD27-C200

188 0.09 0.13 5 276 0.54 5 160

BZD27-C220 208 0.09 0.13 2 305 0.50 5 180
BZD27-C240 228 0.09 0.13 2 336 0.45 5 200
BZD27-C270 251 0.09 0.13 2 380 0.40 5 220
BZD27-C300 280 0.09 0.13 2 419 0.36 5 240
BZD27-C330 310 0.09 0.13 2 459 0.33 5 270
BZD27-C360 340 0.09 0.13 2 498 0.30 5 300
BZD27-C390 370 0.09 0.13 2 537 0.28 5 330
BZD27-C430 400 0.09 0.13 2 603 0.25 5 360
BZD27-C470 440 0.09 0.13 2 655 0.23 5 390
BZD27-C510 480 0.09 0.13 2 707 0.21 5 430

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-tp

thermal resistance from junction to tie-point

BZD27-C3V6 to -C6V8 55 K/W
BZD27-C7V5 to -C510 30 K/W

R

th j-a

thermal resistance from junction to ambient note 1

BZD27-C3V6 to -C6V8 175 K/W
BZD27-C7V5 to -C510 150 K/W

TYPE

NUMBER

REVERSE

BREAKDOWN

VOLTAGE

TEMPERATURE

COEFFICIENT

TEST

CURREN

T

CLAMPING

VOLTAGE

REVERSE

CURRENT at

STAND-OFF

VOLTAGE

V

(BR)R

(V)

at I

test

SZ(%/K) at I

test

I

test

(mA)

V

(CL)R

(V)

at I

RSM

(A)

note 1

I

R

(µA)

at V

R

(V)

MIN. MIN. MAX. MAX. MAX.

1996 Jun 10 7

Philips Semiconductors Product specification

Voltage regulator diodes BZD27 series

GRAPHICAL DATA

Fig.2 Maximum total power dissipation as a

function of temperature.

Types BZD27-C3V6 to-C6V8

Solid line: tie-point temperature.
Dotted line: ambient temperature;

device mounted as shown in Fig.7.

handbook, halfpage

0 200

3

0

1

2

MBH454

P

tot

(W)

100

T (°C)

Fig.3 Maximum total power dissipation as a

function of temperature.

Types BZD27-C7V5 to-C510

Solid line: tie-point temperature.
Dotted line: ambient temperature;

device mounted as shown in Fig.7.

handbook, halfpage

0 200

3

0

1

2

MBH455

P

tot

(W)

100

T (°C)

Tj=25°C prior to surge.
See also Fig 5.

Fig.4 Maximum non-repetitive peak reverse

power dissipation as a function of pulse
duration (square pulse).

handbook, halfpage

10

−2

10

10

2

10

3

10

4

10

−1

1

tp (ms)

P

ZSM
(W)

10

MGD524

Tj=25°C prior to surge.

Fig.5 Maximum non-repetitive peak reverse

power dissipation as a function of nominal
working voltage.

handbook, halfpage

0 3V9 4V7 6V8

400

300

100

0

200

MGD525

5V6

V

Znom

(V)

3V6 4V3 6V25V1

P

ZSM

(W)

1996 Jun 10 8

Philips Semiconductors Product specification

Voltage regulator diodes BZD27 series

Tj=25°C.

Fig.6 Forward current as a function of forward

voltage; typical values.

handbook, halfpage

02

2

I

F

(A)

0

MGD520

1

1

VF (V)

Fig.7 Printed-circuit board for surface mounting.

Dimensions in mm.

MSB213

4.5

2.5

1.25

50

50

Fig.8 Non-repetitive peak reverse current

pulse definition.

In accordance with

“IEC 60-1, Section8”

.
t1=10µs.
t2= 1000µs.

handbook, halfpage

MGD521

I

RSM

(%)

100

90

50

10

t

1

t

2

t

1996 Jun 10 9

Philips Semiconductors Product specification

Voltage regulator diodes BZD27 series

PACKAGE OUTLINE

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Dimensions in mm.
The marking band indicates the cathode.

Fig.9 SOD87.

handbook, full pagewidth

MBA505

0.3

O

2.05

0.05

D =

3.5 0.2

D1 =

1.9

0.1

O