Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
k, halfpage
M3D121
BZD27 series
Voltage regulator diodes
Product specification
Supersedes data of October 1991
File under Discrete Semiconductors, SC01
1996 Jun 10
Page 2
Philips Semiconductors Product specification
Voltage regulator diodes BZD27 series
FEATURES
• Glass passivated
• High maximum operating
temperature
DESCRIPTION
Cavity free cylindrical glass SOD87
package through Implotec
(1)
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
handbook, 4 columns
ka
• Zener working voltage range:
3.6 to 270 V for 46 types
• Transient suppressor stand-off
MAM249
voltage range: 6.2 to 430 V
for 45 types
Fig.1 Simplified outline (SOD87) and symbol.
• Supplied in 8 mm embossed tape.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
P
tot
total power dissipation Ttp= 105 °C; see Figs 2 and 3
BZD27-C3V6 to -C6V8 − 1.7 W
BZD27-C7V5 to -C510 − 2.3 W
P
P
tot
ZSM
total power dissipation PCB mounted (see Fig.7)
BZD27-C3V6 to -C6V8 T
BZD27-C7V5 to -C510 T
non-repetitive peak reverse
power dissipation
=60°C; see Fig.2 − 0.8 W
amb
=55°C; see Fig.3 − 0.8 W
amb
tp= 100 µs; square pulse;
Tj=25°C prior to surge; see Figs.4 and 5
BZD27-C3V6 to -C6V8 − 300 W
BZD27-C7V5 to -C510 − 300 W
P
RSM
non-repetitive peak reverse
power dissipation
10/1000 µs exponential pulse (see Fig.8);
Tj=25°C prior to surge
BZD27-C7V5 to -C510 − 150 W
T
stg
storage temperature
BZD27-C3V6 to -C6V8 −65 +200 °C
BZD27-C7V5 to -C510 −65 +175 °C
T
j
junction temperature
BZD27-C3V6 to -C6V8 −65 +200 °C
BZD27-C7V5 to -C510 −65 +175 °C
1996 Jun 10 2
Page 3
Philips Semiconductors Product specification
Voltage regulator diodes BZD27 series
ELECTRICAL CHARACTERISTICS
Total series
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
Per type when used as voltage regulator diodes
=25°C unless otherwise specified.
T
j
forward voltage IF= 0.2 A; see Fig.6 − 1.2 V
TYPE
No.
SUFFIX
(1)
WORKING VOLTAGE
VZ (V) at I
Z
DIFFERENTIAL
RESISTANCE
r
(Ω)atI
dif
TEMPERATURE
COEFFICIENT
SZ (%/K) at I
Z
Z
TEST
CURRENT
IZ (mA)
REVERSE CURRENT
at REVERSE VOLTAGE
IR (µA)
VR (V)
MIN. NOM. MAX. TYP. MAX. MIN. MAX. MAX.
C3V6 3.4 3.6 3.8 4 8 −0.14 −0.04 100 100 1
C3V9 3.7 3.9 4.1 4 8 −0.14 −0.04 100 50 1
C4V3 4.0 4.3 4.6 4 7 −0.12 −0.02 100 25 1
C4V7 4.4 4.7 5.0 3 7 −0.10 0.00 100 10 1
C5V1 4.8 5.1 5.4 3 6 −0.08 −0.02 100 5 1
C5V6 5.2 5.6 6.0 2 4 −0.04 0.04 100 10 2
C6V2 5.8 6.2 6.6 2 3 −0.01 0.06 100 5 2
C6V8 6.4 6.8 7.2 1 3 0.00 0.07 100 10 3
C7V5 7.0 7.5 7.9 1 2 0.00 0.07 100 50 3
C8V2 7.7 8.2 8.7 1 2 0.03 0.08 100 10 3
C9V1 8.5 9.1 9.6 2 4 0.03 0.08 50 10 5
C10
C11
C12
C13
C15
C16
C18
C20
C22
C24
C27
C30
C33
C36
C39
C43
C47
9.4 10 10.6 2 4 0.05 0.09 50 7 7.5
10.4 11 11.6 4 7 0.05 0.10 50 4 8.2
11.4 12 12.7 4 7 0.05 0.10 50 3 9.1
12.4 13 14.1 5 10 0.05 0.10 50 2 10
13.8 15 15.6 5 10 0.05 0.10 50 1 11
15.3 16 17.1 6 15 0.06 0.11 25 1 12
16.8 18 19.1 6 15 0.06 0.11 25 1 13
18.8 20 21.2 6 15 0.06 0.11 25 1 15
20.8 22 23.3 6 15 0.06 0.11 25 1 16
22.8 24 25.6 7 15 0.06 0.11 25 1 18
25.1 27 28.9 7 15 0.06 0.11 25 1 20
28 30 32 8 15 0.06 0.11 25 1 22
31 33 35 8 15 0.06 0.11 25 1 24
34 36 38 21 40 0.06 0.11 10 1 27
37 39 41 21 40 0.06 0.11 10 1 30
40 43 46 24 45 0.07 0.12 10 1 33
44 47 50 24 45 0.07 0.12 10 1 36
1996 Jun 10 3
Page 4
Philips Semiconductors Product specification
Voltage regulator diodes BZD27 series
TYPE
No.
SUFFIX
(1)
C51
C56
C62
C68
C75
C82
C91
C100
C110
C120
C130
C150
C160
C180
C200
C220
C240
C270
WORKING VOLTAGE
VZ (V) at I
Z
DIFFERENTIAL
RESISTANCE
r
(Ω)atI
dif
TEMPERATURE
COEFFICIENT
SZ (%/K) at I
Z
Z
TEST
CURRENT
IZ (mA)
REVERSE CURRENT
at REVERSE VOLTAGE
IR (µA)
VR (V)
MIN. NOM. MAX. TYP. MAX. MIN. MAX. MAX.
48 51 54 25 60 0.07 0.12 10 1 39
52 56 60 25 60 0.07 0.12 10 1 43
58 62 66 25 80 0.08 0.13 10 1 47
64 68 72 25 80 0.08 0.13 10 1 51
70 75 79 30 100 0.08 0.13 10 1 56
77 82 87 30 100 0.08 0.13 10 1 62
85 91 96 60 200 0.09 0.13 5 1 68
94 100 106 60 200 0.09 0.13 5 1 75
104 110 116 80 250 0.09 0.13 5 1 82
114 120 127 80 250 0.09 0.13 5 1 91
124 130 141 110 300 0.09 0.13 5 1 100
138 150 156 130 300 0.09 0.13 5 1 110
153 160 171 150 350 0.09 0.13 5 1 120
168 180 191 180 400 0.09 0.13 5 1 130
188 200 212 200 500 0.09 0.13 5 1 150
208 220 233 350 750 0.09 0.13 2 1 160
228 240 256 400 850 0.09 0.13 2 1 180
251 270 289 450 1000 0.09 0.13 2 1 200
Note
1. To complete the type number the suffix is added to the basic type number, e.g. BZD27-C51.
1996 Jun 10 4
Page 5
Philips Semiconductors Product specification
Voltage regulator diodes BZD27 series
Per type when used as transient suppressor diodes
T
= 25°C unless otherwise specified.
j
TEST
CURREN
T
I
test
(mA)
CLAMPING
V
(CL)R
VOLTAGE
(V)
at I
note 1
RSM
(A)
TYPE
NUMBER
REVERSE
BREAKDOWN
VOLTAGE
V
(V)
(BR)R
at I
test
TEMPERATURE
COEFFICIENT
SZ(%/K) at I
test
MIN. MIN. MAX. MAX. MAX.
BZD27-C7V5 7.0 0.00 0.07 100 11.3 13.3 1500 6.2
BZD27-C8V2 7.7 0.03 0.08 100 12.3 12.2 1200 6.8
BZD27-C9V1 8.5 0.03 0.08 50 13.3 11.3 100 7.5
BZD27-C10
BZD27-C11
BZD27-C12
BZD27-C13
BZD27-C15
BZD27-C16
BZD27-C18
BZD27-C20
BZD27-C22
BZD27-C24
BZD27-C27
BZD27-C30
BZD27-C33
BZD27-C36
BZD27-C39
BZD27-C43
BZD27-C47
BZD27-C51
BZD27-C56
BZD27-C62
BZD27-C68
BZD27-C75
BZD27-C82
BZD27-C91
BZD27-C100
BZD27-C110
BZD27-C120
BZD27-C130
BZD27-C150
BZD27-C160
9.4 0.05 0.09 50 14.8 10.1 20 8.2
10.4 0.05 0.10 50 15.7 9.6 5 9.1
11.4 0.05 0.10 50 17.0 8.8 5 10
12.4 0.05 0.10 50 18.9 7.9 5 11
13.8 0.05 0.10 50 20.9 7.2 5 12
15.3 0.06 0.11 25 22.9 6.6 5 13
16.8 0.06 0.11 25 25.6 5.9 5 15
18.8 0.06 0.11 25 28.4 5.3 5 16
20.8 0.06 0.11 25 31.0 4.8 5 18
22.8 0.06 0.11 25 33.8 4.4 5 20
25.1 0.06 0.11 25 38.1 3.9 5 22
28 0.06 0.11 25 42.2 3.6 5 24
31 0.06 0.11 25 46.2 3.2 5 27
34 0.06 0.11 10 50.1 3.0 5 30
37 0.06 0.11 10 54.1 2.8 5 33
40 0.07 0.12 10 60.7 2.5 5 36
44 0.07 0.12 10 65.5 2.3 5 39
48 0.07 0.12 10 70.8 2.1 5 43
52 0.07 0.12 10 78.6 1.9 5 47
58 0.08 0.13 10 86.5 1.7 5 51
64 0.08 0.13 10 94.4 1.6 5 56
70 0.08 0.13 10 103.5 1.5 5 62
77 0.08 0.13 10 114 1.3 5 68
85 0.09 0.13 5 126 1.2 5 75
94 0.09 0.13 5 139 1.1 5 82
104 0.09 0.13 5 152 1.0 5 91
114 0.09 0.13 5 167 0.90 5 100
124 0.09 0.13 5 185 0.81 5 110
138 0.09 0.13 5 204 0.73 5 120
153 0.09 0.13 5 224 0.67 5 130
REVERSE
CURRENT at
STAND-OFF
VOLTAGE
(µA)
I
R
at V
(V)
R
1996 Jun 10 5
Page 6
Philips Semiconductors Product specification
Voltage regulator diodes BZD27 series
REVERSE
CURRENT at
STAND-OFF
VOLTAGE
(µA)
I
R
TYPE
NUMBER
BZD27-C180
BZD27-C200
REVERSE
BREAKDOWN
VOLTAGE
(V)
V
(BR)R
at I
test
TEMPERATURE
COEFFICIENT
SZ(%/K) at I
test
MIN. MIN. MAX. MAX. MAX.
TEST
CURREN
T
I
test
(mA)
CLAMPING
V
(CL)R
VOLTAGE
(V)
at I
note 1
RSM
(A)
168 0.09 0.13 5 249 0.60 5 150
188 0.09 0.13 5 276 0.54 5 160
BZD27-C220 208 0.09 0.13 2 305 0.50 5 180
BZD27-C240 228 0.09 0.13 2 336 0.45 5 200
BZD27-C270 251 0.09 0.13 2 380 0.40 5 220
BZD27-C300 280 0.09 0.13 2 419 0.36 5 240
BZD27-C330 310 0.09 0.13 2 459 0.33 5 270
BZD27-C360 340 0.09 0.13 2 498 0.30 5 300
BZD27-C390 370 0.09 0.13 2 537 0.28 5 330
BZD27-C430 400 0.09 0.13 2 603 0.25 5 360
BZD27-C470 440 0.09 0.13 2 655 0.23 5 390
BZD27-C510 480 0.09 0.13 2 707 0.21 5 430
Note
1. Non-repetitive peak reverse current in accordance with
“IEC 60-1, Section 8”
(10/1000 µs pulse); see Fig.8.
at V
(V)
R
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point
BZD27-C3V6 to -C6V8 55 K/W
BZD27-C7V5 to -C510 30 K/W
R
th j-a
thermal resistance from junction to ambient note 1
BZD27-C3V6 to -C6V8 175 K/W
BZD27-C7V5 to -C510 150 K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.7.
For more information please refer to the
‘General Part of Handbook SC01’
.
1996 Jun 10 6
Page 7
Philips Semiconductors Product specification
Voltage regulator diodes BZD27 series
GRAPHICAL DATA
handbook, halfpage
3
P
tot
(W)
2
1
0
0 200
Types BZD27-C3V6 to-C6V8
Solid line: tie-point temperature.
Dotted line: ambient temperature;
device mounted as shown in Fig.7.
100
T (°C)
Fig.2 Maximum total power dissipation as a
function of temperature.
MBH454
handbook, halfpage
3
P
tot
(W)
2
1
0
0 200
Types BZD27-C7V5 to-C510
Solid line: tie-point temperature.
Dotted line: ambient temperature;
device mounted as shown in Fig.7.
100
T (°C)
Fig.3 Maximum total power dissipation as a
function of temperature.
MBH455
tp (ms)
MGD524
10
4
10
handbook, halfpage
P
ZSM
(W)
3
10
2
10
10
−2
10
Tj=25°C prior to surge.
See also Fig 5.
−1
10
1
Fig.4 Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
1996 Jun 10 7
400
handbook, halfpage
P
ZSM
(W)
300
200
100
0
0 3V9 4V7 6V8
3V6 4V3 6V25V1
Tj=25°C prior to surge.
5V6
Fig.5 Maximum non-repetitive peak reverse
power dissipation as a function of nominal
working voltage.
V
Znom
MGD525
(V)
Page 8
Philips Semiconductors Product specification
Voltage regulator diodes BZD27 series
handbook, halfpage
2
I
F
(A)
1
0
02
Tj=25°C.
1
MGD520
VF (V)
Fig.6 Forward current as a function of forward
voltage; typical values.
50
4.5
50
2.5
1.25
Dimensions in mm.
MSB213
Fig.7 Printed-circuit board for surface mounting.
I
handbook, halfpage
RSM
(%)
100
90
50
10
t
1
t
2
In accordance with
t1=10µs.
t2= 1000µs.
“IEC 60-1, Section8”
.
Fig.8 Non-repetitive peak reverse current
pulse definition.
t
MGD521
1996 Jun 10 8
Page 9
Philips Semiconductors Product specification
Voltage regulator diodes BZD27 series
PACKAGE OUTLINE
handbook, full pagewidth
Dimensions in mm.
The marking band indicates the cathode.
O
MBA505
D =
2.05
0.05
0.3
3.5 0.2
O
D1 =
1.9
0.1
Fig.9 SOD87.
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jun 10 9
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