Datasheet BZA800A-series Datasheet (Philips)

DATA SHEET

Preliminary specification 2000 Apr 18

DISCRETE SEMICONDUCTORS

BZA800A-series

Quadruple ESD transient voltage
suppressor

ook, halfpage

MBD127

2000 Apr 18 2

Philips Semiconductors Preliminary specification

Quadruple ESD transient voltage
suppressor

BZA800A-series

FEATURES

• ESD rating >8 kV, according to IEC1000-4-2

• SOT353 (SC-88A) surface mount package

• Common anode configuration

APPLICATIONS

• Computers and peripherals

• Audio and video equipment

• Communication systems

• Medical equipment.

DESCRIPTION

Monolithic transient voltage suppressor diode in a five lead
SOT353 (SC-88A) package for 4-bit wide ESD transient
suppression.

MARKING

PINNING

TYPE NUMBER MARKING CODE

BZA856A Z1
BZA862A Z2
BZA868A Z3
BZA820A Z4

PIN DESCRIPTION

1 cathode 1
2 common anode
3 cathode 2
4 cathode 3
5 cathode 4

handbook, halfpage

13

5

4

2

Top view

MAM212

c

2

b

2

c1/e

2

b

1

e

1

Fig.1 Simplified outline SOT353 (SC-88A)

1

2

3

4

5

2000 Apr 18 3

Philips Semiconductors Preliminary specification

Quadruple ESD transient voltage suppressor BZA800A-series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Notes

1. DC working current limited by P

tot max

.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

I

Z

working current Ta=25°C − note 1 mA

I

F

continuous forward current Ta=25°C − 200 mA

I

FSM

non-repetitive peak forward current tp= 1 ms; square pulse − 3.75 A

P

tot

total power dissipation Ta=25°C − 335 mW

P

ZSM

non repetitive peak reverse power
dissipation

square pulse; tp= 1 ms; see Fig.3

BZA856A, BZA862A, BZA868A − 24 W

BZA820A − 17 W
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C

THERMAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

T

j

=25°C unless otherwise specified.

T

j

= 25 °C unless otherwise specified

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to
ambient

all diodes loaded 370 K/W

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V

F

forward voltage IF= 200 mA 1.3 V

I

R

reverse current

BZA856A V

R

= 3 V 2000 nA

BZA862A V

R

= 4 V 700 nA

BZA868A V

R

= 4.3 V 200 nA

BZA820A V

R

= 15 V 100 nA

TYPE

WORKING VOLTAGE

V

Z

(V)

at I

Z

=1mA

DIFFERENTIAL

RESISTANCE

r

dif

(Ω)

at I

Z

=1mA

TEMP. COEFF.

S

Z

(mV/K)

at I

Z

=1mA

DIODE CAP.

C

d

(pF)

at f = 1 MHz;

V

R

=0V

NON-REPETITIVE P EAK

REVERSE CURRENT

I

ZSM

(A) at tp=1ms;
T

amb

=25°C

MIN. TYP. MAX. MAX. TYP. MAX. MAX.

BZA856A 5.32 5.6 5.88 400 −0.2 240 3.2
BZA862A 5.89 6.2 6.51 300 1.8 200 2.9
BZA868A 6.46 6.8 7.14 200 3 180 2.6
BZA820A 19 20 21 125 16 50 0.6

2000 Apr 18 4

Philips Semiconductors Preliminary specification

Quadruple ESD transient voltage suppressor BZA800A-series

Fig.2 Maximum non-repetitive peak reverse

current as a function of pulse time.

0.1

1

10

0.01 0.1 1 10
t

p

(ms)

I

ZSM

(A)

BZA

856

A

BZA

868

A

Fig.3 Maximum non-repetitive peak reverse

power dissipation as a function of pulse
duration (square pulse).

P

ZSM=VZSM

× I

ZSM

.

V

ZSM

is the non-repetitive peak reverse voltage at I

ZSM

.

1

10

100

0.01 0.1 1 10
t

p

(ms)

P

ZSM

(W)

BZA856A, BZA862A, BZA868A

BZA820A

Fig.4 Diode capacitance as a function of reverse

voltage; typical values.

Tj=25°C; f = 1 MHz.

0

40

80

120

160

200

0 5 10 15

V

R

(V)

C

d

(pF)

BZA820A

BZA862A

BZA856A

BZA868A

2000 Apr 18 5

Philips Semiconductors Preliminary specification

Quadruple ESD transient voltage suppressor BZA800A-series

Vertical Scale =10 V/Div
Horizontal Scale = 50 ns/D iv

BZA856A

BZA820A

BZA862A

GND-2

GND-1

GND-4

BZA868A

GND-3

GND

Vertical Scale =10 V/Div
Horizo ntal Scal e = 50 ns/D iv

Vertical Scale =10 V/Div
Horizontal Scale = 50 ns/Div

GND

Vertical Scale = 100 V/Div
Horizontal Scale = 50 ns/Div

1/4 BZA800A

ESD Tester

RG 223/U
50 ohm Coax

10X

Atten u ator

Digitizing

Oscilloscope

CZ

RZ 450 ohm

note 1

50 ohm

GND

Vertical Scale = 100 V/Div
Horizontal Scale = 50 ns/Div

Fig.5 ESD clamping test set-up and waveforms.

unclamped +1 kV ESD voltage waveform
(IEC 1000-4-2 network)

clamped +1 kV ESD voltage waveform
(IEC 1000-4-2 network)

unclamped −1 kV ESD voltage waveform
(IEC 1000-4-2 network)

clamped −1 kV ESD voltage waveform
(IEC 1000-4-2 network)

IEC 1000-4-2 network
C

Z

= 150 pF; RZ=330Ω

Note 1: attenuator is only used for open
socket high voltage measurements

2000 Apr 18 6

Philips Semiconductors Preliminary specification

Quadruple ESD transient voltage suppressor BZA800A-series

APPLICATION INFORMATION

Typical common anode application

A quadruple transient suppressor in a SOT353 package makes it possible to protect four separate lines using only one
package. Two simplified examples are shown in Figs 6 and 7.

I/O

A
B
C
D

FUNCTIONA L
DECODER

GND

BZA800A

KEYBOARD
TERMINAL
PRINTER
ETC.

Fig.6 Computer interface protection.

Fig.7 Microprocessor protection.

2000 Apr 18 7

Philips Semiconductors Preliminary specification

Quadruple ESD transient voltage suppressor BZA800A-series

Device placement and printed-circuit board layout

Circuit board layout is of extreme importance in the
suppression of transients. The clamping voltage of the
BZA800A is determined by the peak transient current and
the rate of rise of that current (di/dt). Since parasitic
inductances can further add to the clamping voltage
(V = L di/dt) the series conductor lengths on the
printed-circuit board should be kept to a minimum. This
includes the lead length of the suppression element.

In addition to minimizing conductor length the following
printed-circuit board layout guidelines are recommended:

1. Place the suppression element close to the input
terminals or connectors.

2. Keep parallel signal paths to a minimum.

3. Avoid running protection conductors in parallel with
unprotected conductors.

4. Minimize all printed-circuit board loop areas including
power and ground loops.

5. Minimize the length of the transient return path to
ground.

6. Avoid using shared transient return paths to a common
ground point.

2000 Apr 18 8

Philips Semiconductors Preliminary specification

Quadruple ESD transient voltage suppressor BZA800A-series

PACKAGE OUTLINE

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

SOT353

wBM

b

p

D

e

1

e

A

A

1

L

p

Q

detail X

H

E

E

v M

A

AB

y

01 2 mm

scale

c

X

132

45

Plastic surface mounted package; 5 leads SOT353

UNIT

A

1

max

b

p

cD

E

(2)

e

1

H

E

L

p

Qywv

mm

0.1

0.30

0.20

2.2

1.8

0.25

0.10

1.35

1.15

0.65

e

1.3

2.2

2.0

0.2 0.10.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

0.25

0.15

A

1.1

0.8

97-02-28SC-88A

2000 Apr 18 9

Philips Semiconductors Preliminary specification

Quadruple ESD transient voltage suppressor BZA800A-series

DATA SHEET STATUS

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DATA SHEET STATUS

PRODUCT

STATUS

DEFINITIONS

(1)

Objective specification Development This data sheet contains the design target or goal specifications for

product development. Specification may change in any manner without
notice.

Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be

published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.

Product specification Production This data sheet contains final specifications. Philips Semiconductors

reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

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Internet: http://www.semiconductors.philips.com

2000

69

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Printed in The Netherlands 115002/00/03/pp10 Date of release: 2000 Apr 18 Document order number: 9397 750 07042