Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D181
BYX90G
High-voltage soft-recovery
controlled avalanche rectifier
Product specification
Supersedes data of June 1996
1996 Sep 26
Page 2
Philips Semiconductors Product specification
High-voltage soft-recovery
controlled avalanche rectifier
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Soft-recovery switching
characteristics
• Guaranteed avalanche energy
absorption capability.
APPLICATIONS
• High-voltage rectification at high
frequencies
• Sub-component for very high
voltage rectifiers, for example, in
X-ray and radar equipment.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
The package is designed to be used
in an insulating medium such as
resin, oil or SF6 gas.
handbook, halfpage
The cathode is marked by a black band on the body.
Fig.1 Simplified outline (SOD83A) and symbol.
BYX90G
a k
MSA480
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
V
RWM
I
F(AV)
repetitive peak reverse voltage − 7.5 kV
crest working reverse voltage − 6k V
average forward current averaged over any 20 ms period;
T
=45°C; see Fig.2;
oil
− 550 mA
see also Fig.3
I
FRM
I
FSM
repetitive peak forward current − 5A
non-repetitive peak forward current t = 10 ms half sinewave; Tj=T
prior to surge; VR=V
RWMmax
;
j max
− 20 A
see Fig.4
P
RSM
T
stg
T
j
non-repetitive peak reverse power
dissipation
t=10µs; triangular pulse;
Tj=T
prior to surge
j max
− 5kW
storage temperature − 65 +165 ° C
junction temperature − 65 +165 ° C
1996 Sep 26 2
Page 3
Philips Semiconductors Product specification
High-voltage soft-recovery
BYX90G
controlled avalanche rectifier
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
(BR)R
I
R
t
rr
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-o
Note
1. For more information please refer to the
forward voltage IF= 2 A; see Fig.5 −−14.5 V
reverse avalanche
IR= 0.1 mA 8 −− kV
breakdown voltage
reverse current VR=V
RWMmax
reverse recovery time when switched from IF= 0.5 A to
; Tj=T
j max
−−50 µA
−−350 ns
IR= 1 A; measured at IR= 0.25 A;
see Fig.7
thermal resistance from junction to oil note 1; see also Fig.6 20 K/W
“General Part of associated Handbook”
.
1996 Sep 26 3
Page 4
Philips Semiconductors Product specification
High-voltage soft-recovery
controlled avalanche rectifier
GRAPHICAL DATA
600
handbook, halfpage
I
F(AV)
(mA)
400
200
0
0 100 200
a =1.57; δ = 0.5; VR=V
RWMmax
.
Fig.2 Maximum permissible average forward
current as a function of oil temperature
(including losses due to reverse leakage).
T
(° C)
oil
MBH403
BYX90G
I
F(AV)
MBH404
1.57
1.42
(mA)
a=I
6
P
(W)
4
2
0
0 400 200 600
F(RMS)/IF(AV)
; δ = 0.5; VR=V
a = 3
2.5
RWMmax
2
.
handbook, halfpage
Fig.3 Maximum steady state power dissipation
(forward plus leakage losses) as a function
of average forward current.
20
handbook, halfpage
I
FSM
(A)
10
1
− 2
10
50 Hz half sinewave current burst.
Tj= 165 ° C prior to surge.
VR=V
RWMmax
.
− 1
10
1
MBH405
10 10
duration (s)
Fig.4 Maximum non-repetitive peak forward
current as a function of burst duration.
handbook, halfpage
2
6
I
F
(A)
4
2
0
02 4 16 8
Dotted lines: Tj= 165 ° C.
Solid line: Tj=25°C.
MBH406
VF (V)
Fig.5 Forward current as a function of maximum
forward voltage.
1996 Sep 26 4
Page 5
Philips Semiconductors Product specification
High-voltage soft-recovery
controlled avalanche rectifier
2
10
handbook, halfpage
Z
th
(K/W)
10
1
− 2
10
− 1
10
1
10 10
time (s)
BYX90G
MBH391
2
Fig.6 Thermal impedance in oil as a function of
time.
handbook, full pagewidth
10 Ω
25 V
DUT
+
1 Ω
50 Ω
I
(A)
0.25
R
(A)
0.5
0.5
1.0
I
F
t
rr
0
t
MAM057
Input impedance oscilloscope: 1 MΩ , 22 pF; tr≤ 7 ns.
Source impedance: 50 Ω ; tr≤ 15 ns.
Fig.7 Test circuit and reverse recovery time waveform and definition.
1996 Sep 26 5
Page 6
Philips Semiconductors Product specification
High-voltage soft-recovery
controlled avalanche rectifier
APPLICATION INFORMATION
Typical 3-phase bridge application information
I
bridge
(A)
6
4
2
0
1
10
2
10
3
10
handbook, halfpage
T (ms)
MBH414
handbook, halfpage
4
10
I
bridge
BYX90G
T
MBH415
Fig.8 Maximum permissible output current in a 3-phase rectifier bridge with a minimum time between exposures
of 20 s; T
=50°C.
oil
1996 Sep 26 6
Page 7
Philips Semiconductors Product specification
High-voltage soft-recovery
controlled avalanche rectifier
I
bridge
(I
FRM
(A)
5
)
4
3
2
1
δ = 10%
20%
40%
60%
80%
handbook, full pagewidth
BYX90G
MBH416
100%
0
0 0.5
0.25 1.25 1
handbook, halfpage
I
bridge
t
p
t
rep
exposure
time (T)
0.75
time between
exposures >20 s
δ = t
p/trep
1.5 tp (s)
× 100%
MBH417
Fig.9 Maximum current through a 3-phase bridge rectifier versus pulse duration; exposure time T = 1 s;
T
=50°C.
oil
1996 Sep 26 7
Page 8
Philips Semiconductors Product specification
High-voltage soft-recovery
controlled avalanche rectifier
I
bridge
(I
FRM
(A)
5
)
4
3
2
1
δ = 10%
20%
40%
handbook, full pagewidth
60%
80%
BYX90G
MBH418
100%
0
0 0.5 1.5
handbook, halfpage
I
bridge
t
p
t
rep
exposure
time (T)
1
time between
exposures >20 s
δ = t
p/trep
× 100%
MBH417
tp (s)
2
Fig.10 Maximum current through a 3-phase bridge rectifier versus pulse duration; exposure time T = 3 s;
T
=50°C.
oil
1996 Sep 26 8
Page 9
Philips Semiconductors Product specification
High-voltage soft-recovery
controlled avalanche rectifier
PACKAGE OUTLINE
1/1 page = 296 mm (Datasheet)
4.5
max
Dimensions in mm.
The marking band indicates the cathode.
DEFINITIONS
30.7 min 30.7 min 7.5 max
Fig.11 SOD83A.
1.35
max
MSA219 - 2
BYX90G
27 mm
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 26 9