Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, 2 columns
M3D116
BYX10G
Rectifier
Product specification
File under Discrete Semiconductors, SC01
1996 May 24
Page 2
Philips Semiconductors Product specification
Rectifier BYX10G
FEATURES
• Glass passivated
• High maximum operating
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
temperature
• Low leakage current
ka
• Excellent stability
• Available in ammo-pack.
2/3 page (Datasheet)
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RSM
V
RRM
V
RWM
I
F(AV)
non-repetitive peak reverse voltage − 1600
repetitive peak reverse voltage − 1600 V
crest working reverse voltage − 800 V
average forward current Ttp=50°C;
− 1.2 A
V
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
=60°C; PCB mounting
T
amb
− 0.6 A
(see Fig.9); averaged over any
20 ms period; see Figs 3 and 4
I
FSM
T
T
stg
j
non-repetitive peak forward current t = 10 ms half sinewave;
Tj=T
VR=V
prior to surge;
j max
RWMmax
− 25 A
storage temperature −65 +175 °C
junction temperature
see Fig.5
−65 +175 °C
1996 May 24 2
Page 3
Philips Semiconductors Product specification
Rectifier BYX10G
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
t
rr
forward voltage
reverse current
reverse recovery time
= 2 A; Tj=T
I
F
I
= 2 A; see Fig.6
F
V
R=VRWMmax
V
R=VRWMmax
j max;
; see Fig.7
; Tj= 150 °C; see Fig.7
when switched from I
see Fig.6
=0.5AtoIR=1A;
F
measured at IR= 0.25 A; see Fig.10
C
d
diode capacitance
= 0 V; f = 1 MHz; see Fig.8
V
R
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length = 10 mm 46 K/W
thermal resistance from junction to ambient note 1 100 K/W
−−1.5 V
−−1.5 V
−−1µA
−−200 µA
− 3 −
− 30 −
µs
pF
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9.
For more information please refer to the
“General Part of Handbook SC01”
.
1996 May 24 3
Page 4
Philips Semiconductors Product specification
Rectifier BYX10G
GRAPHICAL DATA
1.6
handbook, halfpage
I
F(AV)
(A)
1.2
0.8
0.4
0
0 40 200
a = 1.57; VR=V
Lead length 10 mm.
RWMmax
80 120 160
; δ = 0.5.
MBG040
Ttp (
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
T
MBH392
amb
(°C)
1.0
handbook, halfpage
I
F(AV)
(A)
0.8
0.6
0.4
0.2
0
o
C)
a = 1.57; VR=V
Device mounted as shown in Fig.9.
0 200160120
RWMmax
8040
; δ = 0.5.
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
1.6
handbook, halfpage
P
(W)
1.2
0.8
0.4
0
0 0.2 1
a=I
F(RMS)/IF(AV)
; VR=V
a = 3
0.4 0.6 0.8
; δ = 0.5.
RWMmax
2.5
MGC737
2
1.57
1.42
I
F(AV)
Fig.4 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
(A)
200
handbook, halfpage
T
j
(°C)
100
0
0 1200
Solid line = VR.
Dotted line = V
RWM
800400
; δ = 0.5.
MBH393
VR (V)
Fig.5 Maximum permissible junction temperature
as a function of reverse voltage.
1996 May 24 4
Page 5
Philips Semiconductors Product specification
Rectifier BYX10G
handbook, halfpage
6
I
F
(A)
5
4
3
2
1
0
0
Solid line: Tj=25°C.
Dotted line: Tj= 175 °C.
31.5
VF (V)
Fig.6 Forward current as a function of forward
voltage; maximum values.
MBG049
3
10
handbook, halfpage
I
R
(µA)
2
10
10
VR = V
1
RWMmax
.
16012040 80
Tj (
Fig.7 Reverse current as a function of junction
temperature; maximum values.
MGC738
2000
o
C)
VR (V)
MBG030
3
10
2
10
handbook, halfpage
Cd
(pF)
10
1
1
f = 1 MHz; Tj=25°C.
10 10
2
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
1996 May 24 5
handbook, halfpage
Dimensions in mm.
50
25
7
50
2
3
MGA200
Fig.9 Device mounted on a printed-circuit board.
Page 6
Philips Semiconductors Product specification
Rectifier BYX10G
I
I
(A)
0.25
R
(A)
0.5
0.5
F
t
rr
0
1
t
MAM057
handbook, full pagewidth
10 Ω
DUT
+
25 V
1 Ω
50 Ω
Input impedance oscilloscope: 1 MΩ, 22 pF; tr≤ 7 ns.
Source impedance: 50 Ω; tr≤ 15 ns.
Fig.10 Test circuit and reverse recovery time waveform and definition.
1996 May 24 6
Page 7
Philips Semiconductors Product specification
Rectifier BYX10G
PACKAGE OUTLINE
handbook, full pagewidth
Dimensions in mm.
3.81
max
ka
4.57
max
28 min28 min
0.81
max
MBC880
Fig.11 SOD57.
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 24 7
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