Datasheet BYW99W-200, BYW99PI-200, BYW99P-200 Datasheet (SGS Thomson Microelectronics)

Page 1
BYW99P/PI/W
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
FEATURES
SUITEDFOR SMPS VERYLOWFORWARD LOSSES NEGLIGIBLESWITCHINGLOSSES HIGHSURGE CURRENT CAPABILITY HIGHAVALANCHEENERGYCAPABILITY INSULATEDVERSIONTOP3I:
Insulatingvoltage= 2500 VDC Capacitance= 12 pF
DESCRIPTION
Dual center tap rectifier suited for switchmode power supply and high frequency DC to DC converters. Packagedin SOT93,TOP3I or TO247 this device is intendedfor use in low voltage, high frequency inverters, free wheeling and polarity protection applications.
A1
A2
(Plastic)
BYW99P-200
SOT93
K
isolated
TOP3I
(Plastic)
BYW99PI-200
A2
K
A1
TO247
(Plastic)
BYW99W-200
ABSOLUTE MAXIMUMRATINGS
Symbol Parameter Value Unit
I
F(RMS)
I
F(AV)
I
FSM
Tstg
Tj
RMSforward current Averageforwardcurrent
δ
=0.5
SOT93 / TO247 Tc=120°C Per diode TOP3I Tc=115°C Per diode
Surgenon repetitiveforwardcurrent
Storageand junctiontemperaturerange
tp=10ms sinusoidal
Per diode
Per diode
35 A 15 A
15
200 A
- 40 to + 150
- 40 to + 150
Symbol Parameter Value Unit
V
RRM
October 1999 Ed : 2A
Repetitivepeak reversevoltage
200 V
° °C
C
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Page 2
BYW99P/PI/W
THERMALRESISTANCES
Symbol Parameter Value Unit
Rth (j-c)
Rth (c)
Junctionto case
Coupling
SOT93 / TO247 Perdiode
Total
TOP3I Per diode
Total
SOT93 / TO247
TOP3I
1.8
1.0
2.0
1.25
0.2
0.5
Whenthe diodes1 and 2 are used simultaneously: Tj-Tc(diode 1) = P(diode1) x R
STATICELECTRICAL CHARACTERISTICS
(Per diode)+ P(diode2) x R
th(j-c)
(Perdiode)
th(c)
Symbol TestConditions Min. Typ. Max. Unit
I
*
R
V
F**
=25°CV
T
j
T
= 100°C
j
Tj= 125°CI
=V
R
RRM
=12A
F
20
1.5 mA
0.85 V
°
C/W
°
C/W
µ
A
T
= 125°CI
j
T
=25°CI
j
Pulse test : * tp = 5 ms,δ <2%
** tp = 380µs,
<2%
δ
=25A
F
=25A
F
1.05
1.15
To evaluatethe conduction losses use the followingequation : P = 0.65x I
F(AV)
+0.016 x I
F2(RMS)
RECOVERY CHARACTERISTICS
Symbol TestConditions Min. Typ. Max. Unit
trr T
tfr T
V
FP
=25°CI
j
=25°CI
j
Tj=25°CI
=0.5A
F
I
=1A
R
=1A
I
F
V
=30V
R
=1A
F
V
=1.1 x V
FR
=1A tr = 10 ns 2 V
F
Irr = 0.25A 25 ns
/dt = -50A/µs40
dI
F
tr=10ns 15 ns
F
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Page 3
BYW99P/PI/W
Fig.1 : Average forward power dissipation versus
averageforward current.
P
F(av)(W)
20
17.5
=0.05
=0.1
=0.2 =0.5
=1
15
12.5 10
7.5
T
5
2.5 0
0 2.5 5 7.5 10 12.5 15 17.5 20
I
F(av)(A)
=tp/T
tp
Fig.3 : Forward voltage drop versus forward
current(maximumvalues).
VFM(V)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1 1 10 100 200
Tj=125 C
o
IFM(A)
Fig.2: Peakcurrent versusform factor.
I
M(A)
350
=tp/T
T
I
M
tp
300 250 200 150 100
50
P=10W
P=20W
P=30W
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Fig.4 : Relative variation of thermal impedance
junctionto case versuspulse duration.
K
1.0
Zth(j-c) (tp. )
K=
Rth(j-c)
0.5
0.2
0.1
=0.5
=0.2
=0.1
T
Single puls e
tp(s)
1.0E-03 1.0E-02 1.0E-01 1. 0E+00
=tp/T
tp
Fig.5 :
Non repetitive surge peak forward current versusoverloadduration. (SOT93,TO247)
I
M(A)
160 150 140 130 120 110 100
90 80 70 60 50
IM
40 30 20 10
0
0.001 0.01 0.1 1
t =0.5
t(s)
Tc=25 C
Tc=75 C
Tc=120 C
Fig.6 :
Non repetitive surge peak forward current versusoverloadduration. (TOP3I)
I
M(A)
160 150 140 130 120 110 100
o
o
o
90 80 70 60 50
IM
40 30 20 10
0
0.001 0.01 0.1 1
t =0.5
t(s)
o
Tc=25 C
o
Tc=60 C
o
Tc=115 C
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Page 4
BYW99P/PI/W
Fig.7 :
Average current versus ambient temperature. (δ= 0.5)(SOT93, TO247)
I
F(av)(A)
16 15 14 13 12 11 10
9 8 7
=0.5
6 5 4 3 2
=tp/T
1 0
0 20 40 60 80 100 120 140 160
Fig.9 :
Rth(j-a)=15 C/W
T
tp
Junction capacitance versus reverse
Rth(j-a)=Rth(j-c)
o
o
Tamb( C)
voltageapplied (Typical values).
C(pF)
200 190 180 170 160 150 140 130 120 110 100
1 10 100
F=1Mhz Tj=25 C
VR(V)
o
200
Fig.8 :
Average current versus ambient temperature. (δ= 0.5)(TOP3I)
I
F(av)(A)
16 15 14 13 12 11 10
9 8 7
=0.5
6 5 4 3 2
=tp/T
1 0
0 20 40 60 80 100 120 140 160
Fig.10 :
QRR(nC)
60 55
90%CONFIDENCE
50
IF=IF(av)
Rth(j-a)=15 C/W
T
tp
Recoverycharges versus dI
45 40 35 30 25 20 15 10
5 0
1 10 100
Rth(j-a)=Rth(j-c)
o
o
Tamb( C)
Tj=100 C
dIF/dt(A/us)
/dt.
F
O
O
Tj=25 C
Fig.11:
3.0
2.5
Peakreversecurrent versus dIF/dt.
IRM(A)
90%CONFIDENCE
IF=IF(av)
Tj=100 C
O
2.0
1.5
1.0
O
0.5
Tj=25 C
dIF/dt(A/us)
0.0
4/6
20
1 10 100
Fig.12 :
Dynamic parameters versus junction
temperature.
QRR;IRM[Tj]/QRR;IRM[Tj=125 C]
1.50
1.25
1.00
IRM
0.75
0.50
0.25
0.00 0 255075100125150
o
Tj( C)
o
QRR
Page 5
PACKAGEMECHANICAL DATA
SOT93
Marking: Type number Coolingmethod : C Weight: 5.3g Recommendedtorque value : 0.8m.N Maximumtorquevalue : 1.0m.N
PACKAGEMECHANICAL DATA
TOP3I (isolated)
BYW99P/PI/W
DIMENSIONS
REF.
A 4.70 4.90 1.185 0.193 C 1.90 2.10 0.075 0.083 D 2.50typ. 0.098typ.
D1 2.00typ. 0.078typ
E 0.50 0.78 0.020 0.031
F 1.10 1.30 0.043 0.051 F3 1.75typ 0.069typ F4 2.10 typ. 0.083typ.
G 10.80 11.10 0.425 0.437 H 14.70 15.20 0.279 0.598
L 12.20 0.480 L2 16.20 0.638 L3 18.0 typ. 0.709typ. L5 3.95 4.15 0.156 0.163 L6 31.00typ. 1.220typ.
O 4.00 4.10 0.157 0.161
Millimeters Inches
Min. Max. Min. Max.
Marking: Type number
Coolingmethod : C Weight: 4.7g Recommendedtorque value : 0.8m.N Maximumtorquevalue : 1.0m.N
DIMENSIONS
REF.
Millimeters Inches
Min. Max. Min. Max.
A 4.4 4.6 0.173 0.181 B 1.45 1.55 0.057 0.061 C 14.35 15.60 0.565 0.614 D 0.5 0.7 0.020 0.028 E 2.7 2.9 0.106 0.114 F 15.8 16.5 0.622 0.650
G 20.4 21.1 0.815 0.831
H 15.1 15.5 0.594 0.610
J 5.4 5.65 0.213 0.222
K 3.4 3.65 0.134 0.144
L 4.08 4.17 0.161 0.164 P 1.20 1.40 0.047 0.055 R 4.60 typ. 0.181typ
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Page 6
BYW99P/PI/W
PACKAGEMECHANICAL DATA
TO247
V
REF.
Millimeters Inches
DIMENSIONS
Min. Typ. Max. Min. Typ. Max.
V
Dia.
A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055
F1 3.00 0.118
H
A
F2 2.00 0.078 F3 2.00 2.40 0.078 0.094
L5
F4 3.00 3.40 0.118 0.133
G 10.90 0.429
L
L4L2
H 15.45 15.75 0.608 0.620
L 19.85 20.15 0.781 0.793 L1 3.70 4.30 0.145 0.169 L2 18.50 0.728
F1
V2
F4
F3
F2
L1
L3
D
L3 14.20 14.80 0.559 0.582 L4 34.60 1.362 L5 5.50 0.216
M 2.00 3.00 0.078 0.118
V5° 5°
F(x3)
G
==
ME
V2 60° 60°
Dia. 3.55 3.65 0.139 0.143
Marking
: Typenumber Coolingmethod : C Weight: 4.4g Recommendedtorque value : 0.8m.N Maximumtorquevalue : 1.0m.N
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