Page 1
DATA SH EET
Product specification
Supersedes data of April 1982
1996 Jun 07
DISCRETE SEMICONDUCTORS
BYW96 series
Fast soft-recovery
controlled avalanche rectifiers
handbook, 2 columns
M3D118
Page 2
1996 Jun 07 2
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYW96 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack
• Also available with preformed leads
for easy insertion.
DESCRIPTION
Rugged glass SOD64 package,
using a high temperature alloyed
construction. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYW96D − 800 V
BYW96E − 1000 V
V
R
continuous reverse voltage
BYW96D − 800 V
BYW96E − 1000 V
I
F(AV)
average forward current Ttp=50°C; lead length = 10 mm
see Fig.2;
averaged over any 20 ms period;
see also Fig.6
− 3A
I
F(AV)
average forward current T
amb
=55°C; PCB mounting (see
Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
− 1.25 A
I
FRM
repetitive peak forward current Ttp=50°C; see Fig.4 − 30 A
T
amb
=55°C; see Fig.5 − 13 A
I
FSM
non-repetitive peak forward current t = 10 ms half sine wave;
Tj=T
j max
prior to surge;
VR=V
RRMmax
− 70 A
E
RSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj=T
j max
prior to
surge; inductive load switched off
− 10 mJ
T
stg
storage temperature −65 +175 °C
T
j
junction temperature see Fig.7 −65 +175 °C
Page 3
1996 Jun 07 3
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYW96 series
ELECTRICAL CHARACTERISTICS
T
j
=25°C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.
For more information please refer to the
“General Part of associated Handbook”
.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage IF= 5 A; Tj=T
j max
; see Fig.8 −−1.25 V
I
F
= 5 A; see Fig.8 −−1.50 V
V
(BR)R
reverse avalanche
breakdown voltage
IR= 0.1 mA
BYW96D 900 −−V
BYW96E 1100 −−V
I
R
reverse current VR=V
RRMmax
;
see Fig.9
−−1µA
V
R=VRRMmax
; Tj= 165 °C;
see Fig.9
−−150 µA
t
rr
reverse recovery time when switched from IF= 0.5 A
to IR= 1 A; measured at
IR= 0.25 A; see Fig.12
−−300 ns
C
d
diode capacitance f = 1 MHz; VR= 0 V; see Fig.10 − 75 − pF
maximum slope of
reverse recovery current
when switched from I
F
= 1 A to
VR≥ 30 V and dIF/dt = −1A/µs;
see Fig.13
−−6A/µs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point lead length = 10 mm 25 K/W
R
th j-a
thermal resistance from junction to ambient note 1 75 K/W
dI
R
dt
--------
Page 4
1996 Jun 07 4
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYW96 series
GRAPHICAL DATA
a =1.57; VR=V
RRMmax
; δ= 0.5.
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0
o
200
4
3
I
F(AV)
1
0
2
MGC613
100
Ttp ( C)
(A)
a =1.57; VR=V
RRMmax
; δ= 0.5.
Device mounted as shown in Fig.11.
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
0
o
200
2.0
I
F(AV)
0
0.4
MGC612
0.8
1.2
1.6
(A)
100
T
amb
( C)
Ttp=50°C; R
th j-tp
= 25 K/W.
V
RRMmax
during 1 −δ; curves include derating for T
j max
at V
RRM
= 1000 V.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
40
10
0
20
10 10 1 10 10
2
10
3
10
4
MGC597
30
tp (ms)
–2 –1
I
FRM
(A)
0.2
0.5
0.1
δ =
0.05
1.0
Page 5
1996 Jun 07 5
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYW96 series
T
amb
=55°C; R
th j-a
= 75 K/W.
V
RRMmax
during 1 −δ; curves include derating for T
j max
at V
RRM
= 1000 V.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
16
4
0
8
10 10 1 10 10
2
10
3
10
4
MGC598
12
tp (ms)
–2 –1
I
FRM
(A)
0.5
0.1
1.0
δ =
0.05
0.2
a=I
F(RMS)/IF(AV)
; VR=V
RRMmax
; δ = 0.5.
Fig.6 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
04
5
P
0
1
MGC611
2
3
4
2
(W)
2
I
F(AV)
(A)
2.5 1.57
1.42
a=3
Solid line = VR.
Dotted line = V
RRM
; δ = 0.5.
Fig.7 Maximum permissible junction temperature
as a function of reverse voltage.
handbook, halfpage
0 1000
200
0
T
j
VR (V)
DE
MGC614
100
500
( C)
o
Page 6
1996 Jun 07 6
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYW96 series
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
Fig.8 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
02
10
I
F
0
2
MGC610
4
6
8
(A)
1
VF (V)
VR=V
RRMmax
.
Fig.9 Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
10
3
10
2
10
1
10
1
2000
MGC574
100
Tj ( C)
o
I
R
(µA)
f = 1 MHz; Tj=25°C.
Fig.10 Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
1
MGC596
10
VR (V)
10
2
10
3
1
10
2
10
(pF)
C
d
Fig.11 Device mounted on a printed-circuit board.
Dimensions in mm.
handbook, halfpage
MGA200
3
2
7
50
25
50
Page 7
1996 Jun 07 7
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYW96 series
handbook, full pagewidth
10 Ω
1 Ω
50 Ω
25 V
DUT
MAM057
+
t
rr
0.5
0
0.5
1
I
F
(A)
I
R
(A)
t
0.25
Fig.12 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 MΩ, 22 pF; tr< 7 ns.
Source impedance: 50 Ω; tr<15ns.
Fig.13 Reverse recovery definitions.
ndbook, halfpage
10%
100%
dI
dt
t
t
rr
I
F
I
R
MGC499
F
dI
dt
R
Page 8
1996 Jun 07 8
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYW96 series
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.14 SOD64.
Dimensions in mm.
The marking band indicates the cathode.
handbook, full pagewidth
MBC049
4.5
max
ka
28 min28 min 5.0 max
1.35
max
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