Datasheet BYW81PI-200, BYW81P-200 Datasheet (SGS Thomson Microelectronics)

BYW81P-200



BYW81PI-200

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

FEATURES

SUITEDFOR SMPS VERYLOWFORWARD LOSSES NEGLIGIBLESWITCHINGLOSSES HIGHSURGE CURRENT CAPABILITY HIGHAVALANCHEENERGYCAPABILITY INSULATEDVERSION:

Insulatingvoltage= 2500 V Capacitance= 7 pF

DESCRIPTION

Single chip rectifier suited for switchmode power supplyand highfrequencyDC to DC converters. Packagedin TO-220ACthis device is intended for use in low voltage, high frequency inverters, free wheelingand polarityprotectionapplications.

RMS

K

TO-220AC

(Plastic)

BYW81P-200

A

isolated

TO-220AC

(Plastic)

BYW81PI-200

A

K

ABSOLUTE MAXIMUMRATINGS

Symbol Parameter Value Unit

I

F(RMS)

I

F(AV)

I

FSM

Tstg

Tj

RMSforward current Averageforward current

δ = 0.5

BYW81P Tc=115°C BYW81PI Tc=90°C

Surgenon repetitiveforwardcurrent

Storageand junctiontemperaturerange

tp=10ms sinusoidal

35 A 15 A

15

200 A

- 40 to+ 150

Symbol Parameter Value Unit

V

RRM

October 1999 - Ed: 2D

Repetitivepeakreverse voltage

200 V

°C °C

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BYW81P-200/ BYW81PI-200

THERMALRESISTANCE

Symbol Parameter Value Unit

Rth(j-c)

Junctionto case

BYW81P

BYW81PI

2.0 °C/W

3.5

ELECTRICAL CHARACTERISTICS STATICCHARACTERISTICS

Symbol TestConditions Min. Typ. Max. Unit

I

*

R

V

F**

Pulse test : * tp = 5 ms, duty cycle < 2 %

=25°CV

T

j

T

= 100°C

j

Tj= 125°CI

T

= 125°CI

j

T

=25°CI

j

** tp = 380µs, duty cycle < 2 %

=V

R

RRM

=12A

F

=25A

F

=25A

F

20

1.5 mA

0.85 V

1.05

1.15

µ

A

To evaluatethe conductionlossesuse thefollowing equation: P = 0.65x I

F(AV)

+0.016 x I

F2(RMS)

RECOVERYCHARACTERISTICS

Symbol TestConditions Min. Typ. Max. Unit

trr T

tfr T

V

FP

=25°CI

j

=25°CI

j

Tj=25°CI

=0.5A

F

=1A

I

R

I

=1A

F

=30V

V

R

=1A

F

=1.1 x V

V

FR

=1A tr = 10 ns 2 V

F

Irr = 0.25A 25 ns

dI

/dt = -50A/µs40

F

tr=10ns 15 ns

F

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BYW81P-200/ BYW81PI-200

Fig.1 : Average forward power dissipation versus

averageforward current.

P

F(av)(W)

20.0

17.5

=0.05

=0.1

=0.2

=0.5

=1

15.0

12.5

10.0

7.5

T

5.0

2.5

0.0 0 2.5 5 7.5 10 12.5 15 17.5 20

Fig.3 :

Forward voltage drop versus forward

I

F(av)(A)

=tp/T

tp

current(maximumvalues).

VFM(V)

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.1 1 10 100 200

Tj=125 C

o

IFM(A)

Fig.2: Peakcurrent versusform factor.

I

M(A)

350 300

T

250 200 150 100

P=10W

P=20W

P=30W

=tp/T

tp

50

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Fig.4 :

Relative variation of thermal impedance

junctionto case versuspulse duration.

K

1.0

Zth(j-c) (tp. )

K=

Rth(j-c)

0.5

0.2

0.1

=0.5

=0.2

=0.1

T

Single pulse

tp(s)

1.0E-03 1.0E-02 1.0E-01 1.0E+00

=tp/T

I

M

tp

Fig.5 :

Non repetitive surge peak forward current versusoverloadduration. (BYW81P)

I

M(A )

160 150 140 130 120 110 100

90 80 70 60 50

IM

40 30 20 10

0

0.001 0.01 0.1 1

t =0.5

t(s)

Tc=25 C

Tc=75 C

Tc=115 C

Fig.6 :

Non repetitive surge peak forward current versusoverloadduration. (BYW81PI)

I

M(A)

120 110 100

90 80

o

o o

70 60 50 40

IM

30 20 10

0

0.001 0.01 0.1 1

t =0.5

t(s)

o

Tc=25 C

Tc=60 C

o

Tc=90 C

o

3/6

BYW81P-200/ BYW81PI-200

Fig.7 :

Average current versus ambient temperature. (dutycycle : 0.5) (BYW81P)

I

F(av)(A)

16 15 14 13 12 11 10

9 8 7 6 5 4 3 2 1 0

0 20 40 60 80 100 120 140 160

Rth(j-a)=15 C/W

=0.5

T

=tp/T

tp

Rth(j-a)=Rth(j-c)

o

Tamb( C)

o

Fig.9 : Junction capacitance versus reverse

voltageapplied(Typical values).

C(pF)

120 115 110 105 100

95 90 85 80

F=1Mhz Tj=25 C

VR(V)

1

10 30 50 70

o

Fig.8 :

Average current versus ambient temperature. (dutycycle : 0.5) (BYW81PI)

I

F(av)(A)

16 15 14 13 12 11 10

9 8 7

=0.5

6 5 4 3 2

=tp/T

1 0

0 20 40 60 80 100 120 140 160

Rth(j-a)=15 C/W

T

tp

o

Tamb( C)

Rth(j-a)=Rth(j-c)

o

Fig.10: Recoverychargesversus dIF/dt.

QRR(nC)

60

90%CONFIDENCE

IF=IF(av)

50

O

40

30

20

10

Tj=100 C

Tj=25 C

O

dIF/dt(A/us)

0

11020406080

Fig.11:

3.0

2.5

Peakreversecurrent versus dIF/dt.

IRM(A)

90%CONFIDENCE

IF=IF(av)

Tj=100 C

2.0

1.5

1.0

0.5

0.0 110

Tj=25 C

dIF/dt(A/us)

20 40 60 80

4/6

Fig.12 :

Dynamic parameters versus junction

temperature.

QRR;IRM[Tj]/QRR;IRM[Tj=125 C]

1.50

O

1.25

1.00

IRM

0.75

0.50

O

0.25

0.00 0 255075100125150

o

Tj( C)

o

QRR

PACKAGEMECHANICAL DATA

TO-220AC(JEDECoutline)

BYW81P-200/ BYW81PI-200

H2

L5

ØI

L6

L2

L9

F1

L4

F

G

Marking

: Typenumber Coolingmethod : C Weight: 1.9 g Recommendedtorque value: 0.8m.N Maximumtorquevalue : 1.0m.N

A

C

REF.

Millimeters Inches

DIMENSIONS

Min. Max. Min. Max.

L7

A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034

F1 1.14 1.70 0.044 0.066

D

G 4.95 5.15 0.194 0.202

H2 10.00 10.40 0.393 0.409

L2 16.40typ. 0.645 typ. L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116

M

E

L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154

M 2.6 typ. 0.102 typ.

Diam.I 3.75 3.85 0.147 0.151

PACKAGEMECHANICAL DATA

TO-220AC(isolated)

B

I

A

a2

Marking

e

: Typenumber

L

F

a1

l2

b1

Coolingmethod : C Weight: 2.2g Recommendedtorque value : 0.8m.N Maximumtorquevalue : 1.0m.N

C

b2

REF.

Millimeters Inches

DIMENSIONS

Min. Max. Min. Max.

A 14.23 15.87 0.560 0.625 a1 4.50 0.177 a2 12.70 14.70 0.500 0.579

B 10.20 10.45 0.402 0.411 b1 0.64 0.96 0.025 0.038 b2 1.15 1.39 0.045 0.055

C 4.48 4.82 0.176 0.190 c1 0.35 0.65 0.020 0.026 c2 2.10 2.70 0.083 0.106

e 4.58 5.58 0.180 0.220

F 5.85 6.85 0.230 0.270

I 3.55 4.00 0.140 0.157

c1 c2

L 2.54 3.00 0.100 0.118

l2 1.45 1.75 0.057 0.069

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BYW81P-200/ BYW81PI-200

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