Page 1
BYW80PI-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
FEATURES
SUITEDFOR SMPS
VERYLOWFORWARD LOSSES
NEGLIGIBLESWITCHINGLOSSES
HIGHSURGE CURRENT CAPABILITY
HIGHAVALANCHEENERGYCAPABILITY
INSULATEDPACKAGE:
Insulatingvoltage= 2500 V
Capacitance= 7 pF
DESCRIPTION
Single chip rectifier suited for switchmode power
supplyand highfrequencyDC to DC converters.
Packaged in Isolated TO220AC, this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
RMS
A
K
isolated
TO220AC
(Plastic)
BYW80PI-200
ABSOLUTE MAXIMUMRATINGS
Symbol Parameter Value Unit
I
F(RMS)
I
F(AV)
RMSforward current
Averageforwardcurrent
Tc=110°C10 A
20 A
δ = 0.5
I
FSM
Tstg
Surgenon repetitiveforwardcurrent
Storageand junctiontemperaturerange
Tj
tp=10ms
sinusoidal
100 A
- 65 to+ 150
- 65 to+ 150
Symbol Parameter Value Unit
V
RRM
October 1999 Ed : 2C
Repetitivepeak reversevoltage
200 V
°C
°C
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BYW80PI-200
THERMALRESISTANCE
Symbol Parameter Value Unit
Rth(j-c)
Junctionto case
3.5 °C/W
ELECTRICAL CHARACTERISTICS
STATICCHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
I
*
R
V
F**
Pulse test : * tp = 5 ms, duty cycle < 2%
=25°CV
T
j
T
=100°C
j
Tj=125°CI
T
=125°CI
j
T
=25°CI
j
** tp = 380µs, duty cycle < 2 %
=V
R
RRM
=7A
F
=15A
F
=15A
F
10
1mA
0.85 V
1.05
1.15
To evaluatethe conductionlossesuse the following equation :
P = 0.65 x I
F(AV)
+0.027 x I
F2(RMS)
µ
A
RECOVERYCHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
trr T
tfr T
V
FP
2/5
=25°CI
j
=25°CI
j
Tj=25°CI
= 0.5A
F
I
=1A
R
=1A
I
F
=30V
V
R
=1A
F
V
=1.1 x V
FR
= 1A tr = 10 ns 2 V
F
Irr = 0.25A 25 ns
dI
/dt = -50A/µs35
F
tr=10ns 15 ns
F
Page 3
BYW80PI-200
Fig.1 : Average forward power dissipation versus
averageforward current.
P
F(av)(W)
14
12
=0.05
=0.1
=0.2
=0.5
=1
10
8
6
T
4
2
0
01234567891011121314
I
F(av)(A)
=tp/T
tp
Fig.3 : Forward voltage drop versus forward
current(maximumvalues).
VFM(V)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1 1 10 100
Tj=125 C
o
IFM(A)
Fig.2: Peakcurrent versusform factor.
I
M(A)
200
=tp/T
T
I
M
tp
175
150
125
100
75
50
P=10W
P=5W
P=15W
25
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Fig.4 : Relative variation of thermal impedance
junctionto case versuspulse duration.
K
1.0
Zth(j-c) (tp. )
K=
Rth(j-c)
0.5
0.2
0.1
=0.5
=0.2
=0.1
T
Single pulse
tp(s)
1.0E-03 1.0E-02 1.0E-01 1.0E+00
=tp/T
tp
Fig.5 :
Non repetitive surge peak forward current
versusoverloadduration.
I
M(A)
100
90
80
70
60
50
40
30
IM
20
10
0
0.001 0.01 0.1 1
t
=0.5
t(s)
Tc=25 C
Tc=70 C
Tc=110 C
Fig.6 :
Average current versus ambient
temperature.(duty cycle : 0.5)
I
F(av)(A)
12
11
10
9
8
7
o
o
o
6
=0.5
5
4
3
2
=tp/T
1
0
0 20 40 60 80 100 120 140 160
Rth(j-a)=15 C/W
T
tp
Tamb( C)
Rth(j-a)=Rth(j-c)
o
o
3/5
Page 4
BYW80PI-200
Fig.7 :
Junction capacitance versus reverse
voltageapplied(Typical values).
C(pF)
VR(V)
Fig.9:
Peakreversecurrent versus dIF/dt.
I
RM(A)
90% CONFIDENCE Tj=125 C
o
IF=IF(av)
Fig.8: RecoverychargesversusdIF/dt.
QRR(nC)
90% CONFIDENCE Tj=125 C
o IF=IF(av)
dIF/dt(A/us)
Fig.10 :
Dynamic parameters versus junction
temperature.
O
QRR;IRM[Tj]/QRR;IRM[Tj=125 C
]
dIF/dt(A/us)
IRM
QRR
o
Tj( C)
4/5
Page 5
PACKAGEMECHANICAL DATA
TO220AC(isolated)
BYW80PI-200
B
I
L
F
A
a1
l2
a2
b1
e
Coolingmethod : C
Marking: Typenumber
Weight: 1.86g
Recommendedtorque value : 0.8m.N
Maximumtorquevalue : 1.0m.N
b2
C
REF.
Millimeters Inches
DIMENSIONS
Min. Max. Min. Max.
A 14.23 15.87 0.560 0.625
a1 4.50 0.177
a2 12.70 14.70 0.500 0.579
B 10.20 10.45 0.402 0.411
b1 0.64 0.96 0.025 0.038
b2 1.15 1.39 0.045 0.055
C 4.48 4.82 0.176 0.190
c1 0.35 0.65 0.020 0.026
c2 2.10 2.70 0.083 0.106
e 4.58 5.58 0.180 0.220
F 5.85 6.85 0.230 0.270
I 3.55 4.00 0.140 0.157
c1
c2
L 2.54 3.00 0.100 0.118
l2 1.45 1.75 0.057 0.069
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