Datasheet BYW80F-200, BYW80-200 Datasheet (SGS Thomson Microelectronics)



BYW80(F)-200

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

FEATURES

SUITEDFOR SMPS
VERYLOWFORWARD LOSSES
NEGLIGIBLESWITCHINGLOSSES
HIGHSURGE CURRENT CAPABILITY
HIGHAVALANCHEENERGYCAPABILITY
INSULATEDVERSION(ISOWATT220AC):

Insulatingvoltage= 2000 VDC
Capacitance= 12 pF

A

K

K

DESCRIPTION

Single chip rectifier suited for switchmode power
supplyand highfrequencyDC to DC converters.
Packaged in TO-220AC, or ISOWATT220ACthis
device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity

TO-220AC

(Plastic)

isolated

ISOWATT220AC

(Plastic)

protectionapplications.

BYW80-200

BYW80F-200

ABSOLUTE MAXIMUMRATINGS

Symbol Parameter Value Unit

I

F(RMS)

I

F(AV)

I

FSM

Tstg

Tj

RMSforward current
Averageforwardcurrent

δ = 0.5

TO-220AC Tc=120°C
ISOWATT220AC Tc=95°C

Surgenon repetitiveforwardcurrent

Storageand junctiontemperaturerange

tp=10ms
sinusoidal

20 A
10 A

10

100 A

- 65 to+ 150

- 65 to+ 150

A

°C
°

C

Symbol Parameter Value Unit

V

RRM

October 1999 - Ed: 2D

Repetitivepeak reversevoltage

200 V

1/6

BYW80(F)-200

THERMALRESISTANCE

Symbol Parameter Value Unit

Rth(j-c)

Junctionto case

TO-220AC
ISOWATT220AC

2.5 °C/W

4.7

ELECTRICAL CHARACTERISTICS
STATICCHARACTERISTICS

Symbol TestConditions Min. Typ. Max. Unit

*

I

R

V

F**

Pulse test : * tp = 5 ms, duty cycle < 2 %

=25°CV

T

j

T

= 100°C

j

Tj= 125°CI
T

= 125°CI

j

T

=25°CI

j

** tp = 380 µs, duty cycle < 2 %

=V

R

RRM

=7A

F

=15A

F

=15A

F

10 µA

1mA

0.85 V

1.05

1.15

To evaluatethe conductionlossesuse thefollowing equation:
P = 0.65x I

F(AV)

+0.027 x I

F2(RMS)

RECOVERYCHARACTERISTICS

Symbol TestConditions Min. Typ. Max. Unit

trr T

tfr T

V

FP

2/6

=25°CI

j

=25°CI

j

Tj=25°CI

=0.5A

F

=1A

I

R

I

=1A

F

V

=30V

R

=1A

F

=1.1 x V

V

FR

=1A tr = 10 ns 2 V

F

Irr = 0.25A 25 ns

/dt = -50A/µs35

dI

F

tr=10ns 15 ns

F

BYW80(F)-200

Fig.1 : Average forward power dissipation versus

averageforward current.

P

F(av)(W)

14
12

=0.05

=0.1

=0.2

=0.5

=1

10

8
6

T

4
2
0

01234567891011121314

I

F(av)(A)

=tp/T

tp

Fig.3 : Forward voltage drop versus forward

current(maximumvalues).

VFM(V)

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.1 1 10 100

Tj=125 C

o

IFM(A)

Fig.2: Peakcurrent versusform factor.

I

M(A)

200
175
150
125
100

75
50
25

P=10W

=tp/T

P=5W

P=15W

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

T

I

M

tp

Fig.4 :

Relative variation of thermal impedance
junctionto case versuspulse duration.
(TO-220AC)

K

1.0

Zth(j-c) (tp. )

K=

Rth(j-c)

0.5

0.2

0.1

=0.5

=0.2

=0.1

T

Single pulse

tp(s)

1.0E-03 1.0E-02 1.0E-01 1.0E+00

=tp/T

Fig.5 :

Relative variation of thermal impedance
junctionto case versuspulse duration.
(ISOWATT220AC)

K

1

Zth(j-c) (tp. )

K=

Rth(j-c)

0.8

=0.5

0.6

0.4

=0.1

0.2

tp

0

1.0E-03 1.0E-02 1.0E-01 1.0 E+00 1.0E+01

=0.2

Single pulse

tp(s)

=tp/T

T

tp

3/6

BYW80(F)-200

Fig.6 :

Non repetitive surge peak forward current
versusoverloadduration.
(TO-220AC)

I

M(A)

100

90
80
70
60
50
40
30

IM

20
10

0

0.001 0.01 0.1 1

Fig.8 :

t
=0.5

t(s)

Average current versus ambient

Tc=25 C

Tc=75 C

Tc=120 C

temperature.
(dutycycle : 0.5) (TO-220AC)

I

F(av)(A)

12
11
10

9
8
7
6

=0.5

5
4
3
2
1
0

0 20 40 60 80 100 120 140 160

=tp/T

T

tp

Rth(j-a)=Rth(j-c)

Rth(j-a)=15 C/W

o

Tamb( C)

o

Fig.7 :

Non repetitive surge peak forward current
versusoverloadduration.
(ISOWATT220AC)

I

M(A)

80
70
60

o

o

o

50

o

40
30

IM

20
10

0

0.001 0.01 0.1 1 10

Fig.9 :

t
=0.5

t(s)

Average current versus ambient

Tc=25 C

o

Tc=50 C

o

Tc=95 C

temperature.
(dutycycle : 0.5) (ISOWATT220AC)

I

F(av)(A)

12
11
10

9
8
7

Rth(j-a)=15 C/W

o

6

=0.5

5
4

T

3
2
1

=tp/T

0

0 20 40 60 80 100 120 140 160

tp

Rth(j-a)=Rth(j-c)

o

Tamb( C)

Fig.10 :

Junction capacitance versus reverse

voltageapplied(Typical values).

C(pF)

VR(V)

4/6

Fig.11:

Recoverychargesversus dI

QRR(nC)

90% CONFIDENCE Tj=125 C

/dt.

F

o IF=IF(av)

dIF/dt(A/us)

BYW80(F)-200

Fig.12:

Peakreversecurrent versus dIF/dt.

I

RM(A)

90% CONFIDENCE Tj=125 C

o

dIF/dt(A/us)

PACKAGEMECHANICAL DATA

ISOWATT220AC(JEDECoutline)

IF=IF(av)

Fig.13 :

Dynamic parameters versus junction

temperature.

QRR;IRM[Tj]/QRR ;IRM[Tj=125 C

IRM

QRR

o

Tj( C)

O

]

H

Diam

L6

L2

L3

F1

F

G

Coolingmethod : C
Marking: Type number
Weight: 2 g
Recommendedtorque value: 0.55m.N
Maximumtorquevalue : 0.70m.N

A

B

DE

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181
B 2.50 2.70 0.098 0.106
D 2.40 2.75 0.094 0.108

L7

E 0.40 0.70 0.016 0.028
F 0.75 1.00 0.030 0.039

F1 1.15 1.70 0.045 0.067

G 4.95 5.20 0.195 0.205

H 10.00 10.40 0.394 0.409
L2 16.00typ. 0.63 typ.
L3 28.60 30.60 1.125 1.205
L6 15.90 16.40 0.626 0.646
L7 9.00 9.30 0.354 0.366

Diam 3.00 3.20 0.118 0.126

5/6

BYW80(F)-200

PACKAGEMECHANICAL DATA

TO-220AC(JEDEC outline)

DIMENSIONS

H2

L5

ØI

L6

L2

L9

F1

L4

F

G

Coolingmethod : C
Marking: Type number
Weight: 1.86 g
Recommendedtorque value: 0.8m.N
Maximumtorquevalue : 1.0m.N

REF.

Millimeters Inches

Min. Max. Min. Max.

A

C

L7

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034

F1 1.14 1.70 0.044 0.066

G 4.95 5.15 0.194 0.202

D

H2 10.00 10.40 0.393 0.409

L2 16.40typ. 0.645typ.
L4 13.00 14.00 0.511 0.551

M

E

L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154

M 2.6 typ. 0.102typ.

Diam.I 3.75 3.85 0.147 0.151

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes noresponsibility for the consequences of
use of such informationnor for any infringementof patents or other rights of thirdparties which may result fromits use. No license is grantedby
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap­proval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics

 1999 STMicroelectronics - Printed in Italy - All rights reserved.

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia

Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.

http://www.st.com

6/6