Datasheet BYW77PI-200, BYW77P-200 Datasheet (SGS Thomson Microelectronics)

Page 1
BYW77P/PI-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
FEATURES
SUITEDFOR SMPS VERYLOWFORWARD LOSSES NEGLIGIBLESWITCHINGLOSSES HIGHSURGE CURRENT CAPABILITY HIGHAVALANCHEENERGYCAPABILITY INSULATEDVERSION:
Insulatingvoltage= 2500 VDC Capacitance= 12 pF
A
K
DESCRIPTION
Single chip rectifier suited for switchmode power supplyand highfrequencyDC to DC converters. Packaged in SOD93, or DOP3I this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.
SOD93
(Plastic)
BYW77P-200
isolated
DOP3I
(Plastic)
BYW77PI-200
ABSOLUTE MAXIMUMRATINGS
Symbol Parameter Value Unit
I
F(RMS)
I
F(AV)
I
FSM
Tstg
Tj
RMSforward current 50 A Averageforwardcurrent
δ = 0.5
Surgenon repetitiveforwardcurrent
SOD93 Tc=125°C TOP3I Tc=100°C
tp=10ms sinusoidal
25 A 25
500 A
Storageand junctiontemperaturerange - 40 to+ 150
- 40 to+ 150
Symbol Parameter Value Unit
V
RRM
October 1999 Ed : 2C
Repetitivepeak reversevoltage 200 V
° °C
C
1/5
Page 2
BYW77P/PI-200
THERMALRESISTANCE
Symbol Parameter Value Unit
Rth(j-c) Junctionto case
SOD93 DOP3I
1.0 °C/W
1.8
ELECTRICAL CHARACTERISTICS STATICCHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
I
*T
R
V
F**
Pulse test : * tp = 5 ms, duty cycle < 2 %
=25°CV
j
T
= 100°C2.5mA
j
Tj= 125°CI T
= 125°CI
j
T
=25°CI
j
** tp = 380µs, duty cycle < 2 %
=V
R
RRM
=20 A 0.85 V
F
=40 A 1.00
F
=40 A 1.15
F
25 µA
To evaluatethe conductionlossesusethefollowing equation: P = 0.7x I
F(AV)
+ 0.0075x I
F2(RMS)
RECOVERYCHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
trr T
tfr T
V
FP
2/5
=25°CI
j
=25°CI
j
Tj=25°CI
=0.5A
F
=1A
I
R
I
=1A
F
=30V
V
R
=1A
F
=1.1 x V
V
FR
=1A tr = 5 ns 1.5 V
F
Irr = 0.25A 35 ns
dI
/dt = -50A/µs50
F
tr = 5 ns 10 ns
F
Page 3
BYW77P/PI-200
Fig.1 : Average forward power dissipation versus
averageforward current.
P
F(av)(W)
30.0
27.5
25.0
=0.05
=0.1
=0.2
=0.5
=1
22.5
20.0
17.5
15.0
12.5
T
10.0
7.5
5.0
2.5
0.0 0 5 10 15 20 25 30
Fig.3 :
Forward voltage drop versus forward
I
F(av)(A)
=tp/T
tp
current(maximumvalues).
VFM(V)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1 1 10 100 300
Tj=125 C
o
IFM(A)
Fig.2: Peakcurrent versusform factor.
I
M(A)
500
T
400
P=20W
300
=tp/T
tp
200
P=30W
100
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Fig.4 :
Relative variation of thermal impedance
P=40W
junctionto case versuspulse duration.
K
1.0
Zth(j-c) (tp. )
K=
Rth(j-c)
0.5
0.2
0.1
=0.5
=0.2
=0.1
T
Single pulse
tp(s)
1.0E-03 1.0E-02 1.0E-01 1.0E+00
=tp/T
I
M
tp
Fig.5 :
Non repetitive surge peak forward current versusoverloadduration. (BYW81P)
I
M(A)
300 250 200 150 100
IM
50
0
0.001 0.01 0.1 1
t =0.5
t(s)
Tc=25 C
Tc=75 C
Tc=125 C
Fig.6 :
Non repetitive surge peak forward current versusoverloadduration. (BYW81PI)
I
M(A)
250
200
o
o
o
150
Tc=25 C
100
IM
50
0
0.001 0.01 0.1 1
t =0.5
t(s)
Tc=50 C
Tc=100 C
o
o
o
3/5
Page 4
BYW77P/PI-200
Fig.7 :
Average current versus ambient temperature. (dutycycle : 0.5) (SOD93)
I
F(av)(A)
30
Rth(j-a)=Rth(j-c)
25
=0.5
20
T
15
10
Rth(j-a)=15 C/W
5
0
0 20 40 60 80 100 120 140 160
o
=tp/T
Tamb( C)
tp
o
Fig.9 : Junction capacitance versus reverse
voltageapplied(Typical values).
C(pF)
200 190
F=1Mhz Tj=25 C
180 170 160 150 140 130 120 110 100
110100
VR(V)
o
200
Fig.8 :
Average current versus ambient temperature. (dutycycle : 0.5) (DOP3I)
I
F(av)(A)
30
25
=0.5
20
Rth(j-a)=Rth(j-c)
T
15
10
Rth(j-a)=15 C/W
5
0
0 20 40 60 80 100 120 140 160
=tp/T
o
Tamb( C)
tp
o
Fig.10: Recoverychargesversus dIF/dt.
QRR(nC)
80
90%CONFIDENCE
70
IF=IF(av)
60 50 40 30 20 10
0
1 10 100
dIF/dt(A/us)
O
Tj=100 C
Tj=25 C
O
Fig.11:
Peakreversecurrent versus dIF/dt.
Fig.12 :
temperature.
IRM(A)
3.0
90%CONFIDENCE
IF=IF(av)
2.5
O
Tj=100 C
2.0
1.5
1.0
O
0.5
Tj=25 C
dIF/dt(A/ us)
0.0
4/5
20
110100
QRR;IRM[Tj]/QRR;IRM[Tj=125 C]
1.50
1.25
1.00
0.75
0.50
0.25
0.00 0 255075100125150
Dynamic parameters versus junction
o
IRM
QRR
o
Tj( C)
Page 5
PACKAGEMECHANICAL DATA
DOP3I(isoluted)
BYW77P/PI-200
DIMENSIONS
REF.
A 4.4 4.6 0.173 0.181
B 1.45 1.55 0.057 0.061 C 14.35 15.60 0.565 0.614 D 0.5 0.7 0.020 0.028 E 2.7 2.9 0.106 0.114
F 15.8 16.5 0.622 0.650 G 20.4 21.1 0.815 0.831 H 15.1 15.5 0.594 0.610 K 3.4 3.65 0.134 0.144
L 4.08 4.17 0.161 0.164 N 10.8 11.3 0.425 0.444 P 1.20 1.40 0.047 0.055 R 4.60 typ. 0.181typ.
Millimeters Inches
Min. Max. Min. Max.
Coolingmethod : C Marking: Type number Weight: 4.52 g Recommendedtorque value: 0.8m.N Maximumtorquevalue : 1.0m.N
5/5
Page 6
BYW77P/PI-200
PACKAGEMECHANICAL DATA
SOD93
DIMENSIONS
REF.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.70 4.90 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.50 0.098
D1 1.27 0.050
E 0.50 0.78 0.020 0.031
F 1.10 1.30 0.043 0.051
F3 1.75 0.069
G 10.80 11.100.425 0.437 H 14.70 15.20 0.578 0.598
L 12.20 0.480 L2 16.20 0.638 L3 18.0 0.709 L5 3.95 4.15 0.156 0.163 L6 31.00 1.220
O 4.00 4.10 0.157 0.161
Coolingmethod : C Marking: Type number Weight: 3.79g Recommendedtorque value: 0.8m.N Maximumtorquevalue : 1.0m.N
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