SUITEDFOR SMPS
VERYLOWFORWARD LOSSES
NEGLIGIBLESWITCHINGLOSSES
HIGHSURGE CURRENT CAPABILITY
HIGHAVALANCHEENERGYCAPABILITY
INSULATEDVERSION:
Insulatingvoltage= 2500 VDC
Capacitance= 12 pF
A
K
DESCRIPTION
Single chip rectifier suited for switchmode power
supplyand highfrequencyDC to DC converters.
Packaged in SOD93, or DOP3I this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
SOD93
(Plastic)
BYW77P-200
isolated
DOP3I
(Plastic)
BYW77PI-200
ABSOLUTE MAXIMUMRATINGS
SymbolParameterValueUnit
I
F(RMS)
I
F(AV)
I
FSM
Tstg
Tj
RMSforward current50A
Averageforwardcurrent
δ = 0.5
Surgenon repetitiveforwardcurrent
SOD93Tc=125°C
TOP3ITc=100°C
tp=10ms
sinusoidal
25A
25
500A
Storageand junctiontemperaturerange- 40 to+ 150
- 40 to+ 150
SymbolParameterValueUnit
V
RRM
October 1999Ed : 2C
Repetitivepeak reversevoltage200V
°
°C
C
1/5
Page 2
BYW77P/PI-200
THERMALRESISTANCE
SymbolParameterValueUnit
Rth(j-c)Junctionto case
SOD93
DOP3I
1.0°C/W
1.8
ELECTRICAL CHARACTERISTICS
STATICCHARACTERISTICS
SymbolTest ConditionsMin.Typ.Max.Unit
I
*T
R
V
F**
Pulse test : * tp = 5 ms, duty cycle < 2 %
=25°CV
j
T
= 100°C2.5mA
j
Tj= 125°CI
T
= 125°CI
j
T
=25°CI
j
** tp = 380µs, duty cycle < 2 %
=V
R
RRM
=20 A0.85V
F
=40 A1.00
F
=40 A1.15
F
25µA
To evaluatethe conductionlossesusethefollowing equation:
P = 0.7x I
F(AV)
+ 0.0075x I
F2(RMS)
RECOVERYCHARACTERISTICS
SymbolTest ConditionsMin.Typ.Max.Unit
trrT
tfrT
V
FP
2/5
=25°CI
j
=25°CI
j
Tj=25°CI
=0.5A
F
=1A
I
R
I
=1A
F
=30V
V
R
=1A
F
=1.1 x V
V
FR
=1Atr = 5 ns1.5V
F
Irr = 0.25A35ns
dI
/dt = -50A/µs50
F
tr = 5 ns10ns
F
Page 3
BYW77P/PI-200
Fig.1 : Average forward power dissipation versus
averageforward current.
P
F(av)(W)
30.0
27.5
25.0
=0.05
=0.1
=0.2
=0.5
=1
22.5
20.0
17.5
15.0
12.5
T
10.0
7.5
5.0
2.5
0.0
051015202530
Fig.3 :
Forward voltage drop versus forward
I
F(av)(A)
=tp/T
tp
current(maximumvalues).
VFM(V)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1110100300
Tj=125 C
o
IFM(A)
Fig.2: Peakcurrent versusform factor.
I
M(A)
500
T
400
P=20W
300
=tp/T
tp
200
P=30W
100
0
00.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.91
Fig.4 :
Relative variation of thermal impedance
P=40W
junctionto case versuspulse duration.
K
1.0
Zth(j-c) (tp. )
K=
Rth(j-c)
0.5
0.2
0.1
=0.5
=0.2
=0.1
T
Single pulse
tp(s)
1.0E-031.0E-021.0E-011.0E+00
=tp/T
I
M
tp
Fig.5 :
Non repetitive surge peak forward current
versusoverloadduration.
(BYW81P)
I
M(A)
300
250
200
150
100
IM
50
0
0.0010.010.11
t
=0.5
t(s)
Tc=25 C
Tc=75 C
Tc=125 C
Fig.6 :
Non repetitive surge peak forward current
versusoverloadduration.
(BYW81PI)
Coolingmethod : C
Marking: Type number
Weight: 3.79g
Recommendedtorque value: 0.8m.N
Maximumtorquevalue : 1.0m.N
Informationfurnished is believed to be accurate and reliable.However, STMicroelectronics assumes no responsibility for the consequences of
use of such informationnor for any infringementof patents or otherrights of third parties which may resultfrom its use.No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems withoutexpress written approval of STMicroelectronics.
The ST logo is a registeredtrademark ofSTMicroelectronics
1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
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