Datasheet BYW77G-200 Datasheet (SGS Thomson Microelectronics)



HIGH EFFICIENCY FAST RECOVERY DIODES

MAINPRODUCTCHARACTERISTICS

BYW77G-200

I

F(AV)

V

RRM

25 A

200 V
trr 50 ns
V

F

0.85 V

FEATURESAND BENEFITS

VERYSMALLCONDUCTIONLOSSES
NEGLIGIBLESWITCHINGLOSSES
LOW FORWARD AND REVERSE RECOVERY

TIME
HIGHSURGECURRENTCAPABILITY
SMD PACKAGE

DESCRIPTION

Singlerectifiersuited for switchmodepowersupply
andhigh frequencyDC to DCconverters.
Packagedin D

2

PAK, this surface mount device is
intended for usein high frequencyinverters, free
wheelingand polarityprotectionapplications.

1&3 4

4

1

2

PAK

D

(Plastic)

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

Repetitivepeak reversevoltage 200 V
RMSforwardcurrent 50 A
Averageforward current Tc=125°C

25 A

δ = 0.5

I

FSM

Surgenon repetitiveforwardcurrent tp=10ms

200 A

sinusoidal

I

FRM

Repetitivepeak forwardcurrent tp = 5µs

310 A

f = 5 kHz

Tstg

Storageand junctiontemperaturerange - 40 to + 150

Tj

October 1999- Ed:3A

°

C

1/5

BYW77G-200

THERMALRESISTANCE

Symbol Parameter Value Unit

R

th (j-c)

Junctionto case 1 °C/W

STATICELECTRICALCHARACTERISTICS

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

* Reverseleakage current VR=V

R

V

F**

Pulse test : * tp = 5 ms, δ <2%

Forwardvoltagedrop IF=20A Tj= 125°C 0.85 V

** tp = 380µs, δ<2%

RRM

I

=40A Tj= 125°C 1.00

F

I

=40A Tj=25°C 1.15

F

Tj=25°C25µA

= 100°C 2.5 mA

T

j

To evaluatethe conductionlossesuse thefollowingequation:
P = 0.65x I

F(AV)

+0.0075 I

F2(RMS)

RECOVERYCHARACTERISTICS

Symbol Parameter TestConditions Min. Typ. Max. Unit

t

rr

Reverserecovery
time

Tj=25°CI
Irr= 0.25A I

= 0.5A

F

=1A

R

35 ns

t

fr

Forwardrecovery
time

V

FP

Peakforward
voltage

PIN OUT configurationin D

=25°CI

T

j

dI

/dt= -50A/µsVR=30V

F

Tj=25°CI

/dt= 100A/µs

dI

F

V

= 1.1 x VFmax

FR

Tj=25°CIF=1A
dI

/dt= 100A/µs 1.5

F

2

PAK:

=1A

F

=1A

F

50

ns

10

V

2/5

BYW77G-200

Fig.1 : Average forward power dissipation versus

averageforward current.

P

F(av)(W)

30.0

27.5

25.0

=0.05

=0.1

=0.2

=0.5

=1

22.5

20.0

17.5

15.0

12.5

T

10.0

7.5

5.0

2.5

0.0
0 5 10 15 20 25 30

I

F(av)(A)

=tp/T

tp

Fig.3 : Forward voltage drop versus forward cur-

rent(maximumvalues).

VFM(V)

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.1 1 10 100 300

Tj=125 C

o

IFM(A)

Fig.2: Peakcurrent versusform factor.

I

M(A)

500

T

400

P=20W

300

=tp/T

tp

200

P=30W

100

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

Fig.4 :

Relative variation of thermal impedance

P=40W

junctionto case versuspulse duration.

K

1.0

Zth(j-c) (tp. )

K=

Rth(j-c)

0.5

0.2

0.1

=0.5

=0.2

=0.1

T

Single pulse

tp(s)

1.0E-03 1.0E-02 1.0E-01 1.0E+00

=tp/T

I

M

tp

Fig.5 : Non repetitive surge peak forward current

versusoverload duration.

I

M(A)

300
250
200

o

150
100

IM

50

0

0.001 0.01 0.1 1

t
=0.5

t(s)

Tc=25 C

o

Tc=75 C

o

Tc=125 C

Fig.6 : Average current versus ambient tempera-

ture.(δ = 0.5)

I

F(av)(A)

30

25

=0.5

20

15

10

Rth(j-a)=15 C/W

5

0

0 20 40 60 80 100 120 140 160

o

=tp/T

o

Tamb( C)

Rth(j-a)=Rth(j-c)

T

tp

3/5

BYW77G-200

Fig.7 :

Junction capacitance versus reverse volt-

Fig.8:

Reverserecoverychargesversus dI

age applied(Typical values).

C(pF)

200
190

F=1MHzTj=25 C

o

180
170
160
150
140
130
120
110
100

110100

Fig.9:

Peakreverse currentversus dIF/dt.

VR(V)

200

QRR(nC)

80

90%CONFIDENCE

70

IF=IF(av)

60
50
40
30
20
10

0

110100

Fig.10 :

perature.

IRM(A)

3.0

90%CONFIDENCE

IF=IF(av)

2.5

O

Tj=100 C

2.0

1.5

1.0

O

0.5

Tj=25 C

dIF/dt(A/µs)

0.0
20

110100

QRR;IRM[Tj]/QRR;IRM[Tj=125 C]

1.50

1.25

1.00

0.75

0.50

0.25

0.00
0 25 50 75 100 125 150

/dt.

F

O

Tj=100 C

O

Tj=25 C

dIF/dt(A/µs)

Dynamicparametersversus junction tem-

o

IRM

QRR

o

Tj( C)

4/5

PACKAGEMECHANICALDATA

2

D

PAK(Plastic)

E

L2

L

L3

A1

B2
B

G

2.0 MIN.
FLAT ZONE

C2

BYW77G-200

DIMENSIONS

A

A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

REF.

B 0.70 0.93 0.027 0.037

D

B2 1.14 1.70 0.045 0.067

C 0.45 0.60 0.017 0.024

C2 1.23 1.36 0.048 0.054

D 8.95 9.35 0.352 0.368

C

R

E 10.00 10.40 0.393 0.409

G 4.88 5.28 0.192 0.208

L 15.00 15.85 0.590 0.624
L2 1.27 1.40 0.050 0.055

A2

L3 1.40 1.75 0.055 0.069

M 2.40 3.20 0.094 0.126

R 0.40 typ. 0.016typ.

V2

V2 0° 8° 0° 8°

Millimeters Inches

Min. Max. Min. Max.

FOOT PRINT

10.30

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implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap­proval of STMicroelectronics.

(inmillimeters)

16.90

5.08

1.30

3.70

8.90

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