Datasheet BYW29G-200 Datasheet (SGS Thomson Microelectronics)



HIGH EFFICIENCY FAST RECOVERY DIODES

MAINPRODUCTCHARACTERISTICS

BYW29G-200

I

F(AV)

V

RRM

8A

200 V
trr 35 ns
V

F

0.85V

FEATURESAND BENEFITS

VERYSMALL CONDUCTION LOSSES
NEGLIGIBLESWITCHING LOSSES
LOW FORWARD AND REVERSE RECOVERY

TIMES
HIGHSURGECURRENT
SMD

DESCRIPTION

Singlerectifiersuited forswitchmodepowersupply
and high frequencyDC to DCconverters.
PackagedinasurfacemountpackageD

2

PAK,this
device is intended for use in high frequency in­verters,freewheelingandpolarityprotectionappli­cations.

AK

K

NC

2

PAK

D

(Plastic)

A

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

FRM

Repetitivepeak reversevoltage 200 V
RMSforwardcurrent 16 A
Averageforwardcurrent Tc=120°C

δ

=0.5

Surgenon repetitiveforwardcurrent
(Allpins connected)

tp=10ms
sinusoidal

Repetitivepeak forwardcurrent tp = 5 µs

8A

80 A

75 A

f = 5 kHz

Tstg

Storageand junctiontemperaturerange - 40 to+ 150 °C

Tj

October 1999 - Ed: 2

1/5

BYW29G-200

THERMALRESISTANCE

Symbol Parameter Value Unit

Rth (j-c) Junctionto casethermal resistance 2.8

STATICELECTRICALCHARACTERISTICS

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

* Reverseleakagecurrent VR=V

R

V

F**

Pulse test : * tp = 5 ms, duty cycle < 2 %

Forwardvoltage drop IF=5A Tj= 125°C 0.85 V

** tp = 380 µs, dutycycle< 2 %

RRM

=10A Tj= 125°C 1.05

I

F

=10A Tj=25°C 1.15

I

F

Tj=25°C10
T

= 100°C 0.6 mA

j

To evaluatethe conductionlossesuse thefollowingequation:
P = 0.65x I

F(AV)

+0.040I

F2(RMS)

RECOVERYCHARACTERISTICS

Symbol Parameter TestConditions Min. Typ. Max. Unit

°

C/W

µ

A

t

rr

Reverserecovery
time

t

fr

Forwardrecovery
time

V

FP

Peakforward
voltage

PIN OUTconfigurationin D

Tj=25°CI
Irr = 0.25A I

T

=25°CI

j

/dt = -50A/µsV

dI

F

Tj=25°CI

/dt = 100A/µs

dI

F

= 1.1 x VFmax

V

FR

Tj=25°CIF=1A

/dt = 100A/µs2

dI

F

2

PAK:

= 0.5A

F

=1A

R

=1A

F

=

30V

R

=1A

F

25 ns

35

ns

15

V

2/5

BYW29G-200

Fig.1 : Averageforward power dissipation versus

averageforward current.

P

F(av)(W)

12

=0.05 =0.1

=0.2

=0.5

=1

10

8

6
4

T

2

I

F(av)(A)

0

01234567891011

=tp/T

tp

Fig.3 : Forward voltage drop versus forward cur-

rent(maximumvalues).

VFM(V)

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.1 1 10 100

Tj=125 C

o

IFM(A)

Fig.2: Peakcurrent versusformfactor.

I

M(A)

160
140

T

120
100

80
60
40

P=10W

P=5W

P=15W

=tp/T

tp

20

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

Fig.4 :

Relative variation of thermal impedance

junctionto case versuspulse duration.

K

1.0

Zth(j-c) (tp. )

K=

Rth(j-c)

0.5

0.2

0.1

=0.5

=0.2

=0.1

T

Single pulse

tp(s)

1.0E-03 1.0E-02 1.0E-01 1. 0E+00

=tp/T

I

M

tp

Fig.5 : Non repetitive surge peak forward current

versusoverload duration.

I

M(A)

80
70
60
50
40
30

IM

20
10

0

0.001 0.01 0.1 1

t
=0.5

t(s)

o

Tc=25 C

o

Tc=75 C

o

Tc=120 C

Fig.6 : Average current versus ambient tempera-

ture.(duty cycle : 0.5)

I

F(av)(A)

10

9
8
7
6
5

=0.5

4

T

Rth(j-a)=15 C/W

3
2
1

=tp/T

0

0 20 40 60 80 100 120 140 160

tp

Rth(j-a)=Rth(j-c)

o

Tamb( C)

o

3/5

BYW29G-200

Fig.7 :

Junction capacitance versus reverse volt-

age applied(Typical values).

C(pF)

VR(V)

Fig.9:

Peakreverse currentversus dIF/dt.

I

RM(A)

90% CONFIDENCE

O

Tj-100 C

F=1Mhz Tj=25 C

o

IF=IF(av)

Fig.8:

RecoverychargesversusdI

QRR(nC)

90%CONFIDENCE Tj-10 0 C

O

dIF/dt(A/us)

Fig.10 :

Dynamicparametersversus junctiontem-

perature.

QRR;IRM[Tj]/QRR;IRM[Tj=125 C]

o

/dt.

F

IF=IF(av)

dIF/dt(A/us)

IRM

o

Tj( C)

QRR

4/5

PACKAGEMECHANICAL DATA

2

D

PAK(Plastic)

E

L2

L

L3

B2
B

G

* FLATZONE NO LESSTHAN2mm

C2

A1

M

BYW29G-200

DIMENSIONS

REF.

A

A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

D

B 0.70 0.93 0.027 0.037
B2 1.14 1.70 0.045 0.067

C 0.45 0.60 0.017 0.024

C

R

C2 1.23 1.36 0.048 0.054

D 8.95 9.35 0.352 0.368

E 10.00 10.40 0.393 0.409

G 4.88 5.28 0.192 0.208

A2

L 15.00 15.85 0.590 0.624

L2 1.27 1.40 0.050 0.055

*

V2

L3 1.40 1.75 0.055 0.069

M 2.40 3.20 0.094 0.126
R 0.40typ. 0.016typ.

V2 0° 8° 0° 8°

Millimeters Inches

Min. Max. Min. Max.

FOOTPRINT

10.30

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change without notice.This publication supersedes andreplacesallinformationpreviously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems withoutexpress written ap­proval of STMicroelectronics.

(in millimeters)

16.90

5.08

1.30

3.70

8.90

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