Page 1
®
HIGH EFFICIENCY FAST RECOVERY DIODES
MAIN PRODUCT CHARACTERISTICS
BYW29/F/FP/G-200
I
F(AV)
V
RRM
8A
200 V
trr (max) 25 ns
V
(max) 0.85 V
F
FEATURES AND BENEFITS
Very Low Forward Losses
■
Negligible switching losses
■
High surge current capability
■
Insulated packages (ISOWATT220AC,
■
TO-220FPAC):
Insulation voltage: 2000 VDC
Typical insulation capacitance = 12 pF
DESCRIPTION
Single rectifier suited for Switch Mode Power
Supply and high frequency DC to DC converters.
Packaged in TO-220AC, ISOWATT220AC,
TO-220FPAC and D
2
PAK, this device is intended
for use in high frequency inverters, free wheeling
and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS
AK
K
A
NC
2
D
PAK
BYW29G-200
K
TO-220AC
BYW29-200
TO-220FPAC
BYW29FP-200
A
ISOWATT220AC
BYW29F-200
A
K
A
K
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage 200 V
RMS forward current 16 A
Average forward current
δ = 0.5
D2PAK /
TO-220AC
ISOWATT220AC
Tc =120°C 8 A
Tc = 100°C
TO-220FPAC
I
FSM
Surge non repetitive forward current
(All pins connected)
tp=10ms
sinusoidal
80 A
Tstg Storage and junction temperature range - 65 to + 150 °C
Tj Maximum operating junction temperature + 150
May 2002 - Ed: 4B
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BYW29/F/FP/G-200
THERMAL RESISTANCE
Symbol Parameter Value Unit
Rth (j-c) Junction to case thermal resistance TO-220AC
2.8 ° C/W
D2PAK
ISOWATT220AC 5
TO-220FPAC 5.5
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
* Reverse leakage current VR=V
I
R
V
F**
Pulse test : * tp = 5 ms, duty cycle<2%
To evaluate the conduction losses use the following equation :
P=0.65xI
Forward voltage drop IF=5A Tj= 125° C 0.85 V
** tp = 380 µ s, duty cycle<2%
+ 0.040 I
F(AV)
F2(RMS)
RRM
=10A Tj= 125° C 1.05
I
F
=10A Tj=25°C 1.15
I
F
Tj= 25°C 10 µ A
= 100° C 0.6 mA
T
j
RECOVERY CHARACTERISTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
rr
Reverse recovery
time
Tj= 25°C IF= 0.5A
Irr = 0.25 A IR=1A
=25°CI
T
j
=1A
F
25 ns
35
dIF/dt = -50A/µ sVR= 30V
t
fr
Forward recovery
time
Tj=25°CI
=1A
F
dIF/dt = 100A/µ s
15
VFR= 1.1xVFmax
V
FP
Peak forward
voltage
Tj=25°CI F=1A
dIF/dt = 100A/µ s
2
ns
V
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BYW29/F/FP/G-200
Fig.1 : Average forward power dissipation versus
average forward current.
PF(av)(W)
12
10
8
6
4
2
0
01234567891 01 1
δ = 0.05
δ = 0.1
δ = 0.2
IF(av)(A)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig.3 : Forward voltage drop versus forward current (maximum values).
IFM(A)
100.0
Fig.2 : Peak current versus form factor.
IM(A)
160
140
P = 10W
120
100
80
60
40
20
P= 5W
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
δ
P = 15W
T
IM
δ
=tp/T
tp
Fig.4-1 : Relative variation of thermal impedance
junctiontocaseversus pulse duration (TO-220AC,
2
PAK).
D
Zth(j-c)/Rth(j-c)
1.0
δ = 0.5
10.0
1.0
Tj=125°C
Tj=25°C
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Fig.4-2 :Relative variation of thermal impedance
junction to case versus pulse duration
(TO-220FPAC, ISOWATT220AC).
Zth(j-c)/Rth(j-c)
1.0
δ = 0.5
δ = 0.2
δ = 0.1
0.1
Single pulse
T
tp(s)
0.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
δ
=tp/T
tp
δ = 0.2
δ = 0.1
δ
=tp/T
T
2
PAK).
Tc=120°C
tp
Tc=25°C
Tc=75°C
Single pulse
tp(s)
0.1
1.E-03 1.E-02 1.E-01 1.E+00
Fig.5-1 :Nonrepetitive surge peakforwardcurrent
versus overload duration (TO-220AC, D
IM(A)
80
70
60
50
40
30
20
IM
10
0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.5
t
t(s)
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BYW29/F/FP/G-200
Fig.5-2 : Non repetitive surge peak forward cur-
rent versus overload duration (TO-220FPAC,
ISOWATT220AC).
IM(A)
60
50
40
30
20
IM
10
0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.5
t
t(s)
Tc=25°C
Tc=75°C
Tc=100°C
Fig.7 : Junction capacitance versus reverse voltage applied (Typical values).
C(pF)
100
F=1MHz
Vosc=30mV
Tj=25°C
Fig.6 : Average current versus ambient temperature. (δ = 0.5)
IF(av)(A)
10
9
8
7
6
5
4
3
2
1
0
0 25 50 75 100 125 150
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C:W
Tamb(°C)
ISOWATT220AC
TO-220FPAC
TO-220AC/D²PAK
Fig.8 : Reverse recovery charges versus dIF/dt
(90%confidence).
Qrr(nC)
1000
IF=8A
VR=100V
Tj=100°C
VR(V)
10
1 10 100 1000
Fig.9 : Peak reverse recovery current versus
dIF/dt (90% confidence).
IRM(A)
100
IF=8A
VR=100V
Tj=100°C
10
1
10 100 1000
dIF/dt(A/µs)
100
dIF/dt(A/µs)
10
10 100 1000
Fig.10 : Dynamic parameters versus junction tem-
perature.
Qrr; IRM[Tj] / Qrr; IRM[Tj=125°C]
1.50
IF=8A
VR=100V
1.25
1.00
0.75
0.50
0.25
0.00
0 25 50 75 100 125 150
IRM
QRR
Tj(°C)
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Page 5
Fig.11 : Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35µm) for
2
PAK.
D
Rth(j-a)(°C/W)
80
70
60
50
40
30
20
10
0
024681 01 21 41 61 82 0
PACKAGE MECHANICAL DATA
2
PAK (Plastic)
D
E
L2
L
L3
G
S(cm²)
A
C2
A1
B2
B
* FLAT ZONE NO LESS THAN 2mm
C
A2
M
*
R
V2
BYW29/F/FP/G-200
DIMENSIONS
REF.
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
D
B 0.70 0.93 0.027 0.037
B2 1.14 1.70 0.045 0.067
C 0.45 0.60 0.017 0.024
C2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
E 10.00 10.40 0.393 0.409
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069
M 2.40 3.20 0.094 0.126
R 0.40 typ. 0.016 typ.
V2 0° 8° 0° 8°
Millimeters Inches
Min. Max. Min. Max.
FOOT PRINT (in millimeters)
16.90
10.30
8.90
5.08
1.30
3.70
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BYW29/F/FP/G-200
PACKAGE MECHANICAL DATA
TO-220AC
H2
L5
Ø I
L6
L2
L9
F1
L4
F
G
DIMENSIONS
REF.
Millimeters Inches
Min. Max. Min. Max.
A
C
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
L7
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
D
H2 10.00 10.40 0.393 0.409
L2 16.40 typ. 0.645 typ.
L4 13.00 14.00 0.511 0.551
M
E
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6typ. 0.102 typ.
Diam. I 3.75 3.85 0.147 0.151
PACKAGE MECHANICAL DATA
TO-220FPAC
H
Dia
L6
L2
L3
L5
D
L4
G1
G
F1
F
REF. DIMENSIONS
Millimeters Inches
A
B
Min. Max. Min. Max.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.018 0.027
F 0.75 1 0.030 0.039
L7
F1 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 Typ. 0.63 Typ.
L3 28.6 30.6 1.126 1.205
L4 9.8 10.6 0.386 0.417
L5 2.9 3.6 0.114 0.142
E
L6 15.9 16.4 0.626 0.646
L7 9.00 9.30 0.354 0.366
Dia. 3.00 3.20 0.118 0.126
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PACKAGE MECHANICAL DATA
ISOWATT220AC
BYW29/F/FP/G-200
H
A
B
REF.
Millimeters Inches
DIMENSIONS
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
Diam
L6
L2
L3
L7
B 2.50 2.70 0.098 0.106
D 2.40 2.75 0.094 0.108
E 0.40 0.70 0.016 0.028
F 0.75 1.00 0.030 0.039
F1 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
F1
H 10.00 10.40 0.394 0.409
L2 16.00 Typ. 0.630 Typ.
L3 28.60 30.60 1.125 1.205
L6 15.90 16.40 0.626 0.646
F
G
D E
L7 9.00 9.30 0.354 0.366
Diam 3.00 3.20 0.118 0.126
Type Marking Package Weight Base Qty DeliveryMode
BYW29-200 BYW29-200 TO-220AC 1.86 g 50 Tube
BYW29F-200 BYW29F-200 ISOWATT220AC 2.2 g 50 Tube
BYW29FP-200 BYW29FP-200 TO-220FPAC 2 g 50 Tube
2
BYW29G-200 BYW29G-200 D
■
Cooling method: by conduction (C)
■
Recommended torque value (ISOWATT220AC, TO-220FPAC): 0.55 N.m
■
Maximum torque value: 0.7 N.m
■
Recommended torque value (TO-220AC): 0.8 N.m
■
Maximum torque value: 1.0 N.m
■
Epoxy meets UL94, V0
Informationfurnished isbelieved to beaccurate and reliable.However, STMicroelectronicsassumesno responsibilityfor the consequencesof
useof suchinformation nor forany infringementof patents orother rightsofthird partieswhich may resultfrom itsuse. No licenseis grantedby
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change withoutnotice. This publication supersedes and replaces allinformation previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval ofSTMicroelectronics.
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© 2002 STMicroelectronics - Printed in Italy - All rights reserved.
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PAK 1.48 g 50 Tube
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