Page 1
Philips Semiconductors Product specification
Rectifier diodes BYW29E series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 150 V/ 200 V
• Fast switching
• Soft recovery characteristic VF ≤ 0.895 V
• Reverse surge capability
• High thermal cycling performance I
• Low thermal resistance
GENERAL DESCRIPTION PINNING SOD59 (TO220AC)
k a
12
= 8 A
F(AV)
I
≤ 0.2 A
RRM
trr ≤ 25 ns
Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTION
intended foruse as output rectifiers
tab
in high frequency switched mode 1 cathode
power supplies.
2 anode
The BYW29E series is supplied in
the conventional leaded SOD59 tab cathode
(TO220AC) package.
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
F(AV)
I
FRM
I
FSM
I
RRM
I
RSM
T
T
RRM
RWM
R
j
stg
Peak repetitive reverse - 150 200 V
voltage
Working peak reverse - 150 200 V
voltage
Continuous reverse voltage - 150 200 V
Average rectified forward square wave; δ = 0.5; Tmb ≤ 128 ˚C - 8 A
current
Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 128 ˚C - 16 A
current
Non-repetitive peak forward t = 10 ms - 80 A
current t = 8.3 ms - 88 A
sinusoidal; with reapplied V
Peak repetitive reverse tp = 2 µs; δ = 0.001 - 0.2 A
surge current
Peak non-repetitive reverse tp = 100 µs - 0.2 A
surge current
Operating junction - 150 ˚C
temperature
Storage temperature - 40 150 ˚C
BYW29E -150 -200
RRM(max)
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
November 1998 1 Rev 1.300
Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
Page 2
Philips Semiconductors Product specification
Rectifier diodes BYW29E series
ultrafast, rugged
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
Q
rr
t
rr1
t
rr2
V
fr
Thermal resistance junction - - 2.7 K/W
to mounting base
Thermal resistance junction in free air - 60 - K/W
to ambient
Forward voltage IF = 8 A; Tj = 150˚C - 0.8 0.895 V
IF = 8 A - 0.92 1.05 V
IF = 20 A - 1.1 1.3 V
Reverse current VR = V
Reverse recovered charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs-411nC
VR = V
RWM
; Tj = 100˚C - 0.2 0.6 mA
RWM
-210µA
Reverse recovery time IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs2025ns
Reverse recovery time IF = 0.5 A to IR = 1 A; I
Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs-1-V
= 0.25 A - 15 20 ns
rec
November 1998 2 Rev 1.300
Page 3
Philips Semiconductors Product specification
Rectifier diodes BYW29E series
ultrafast, rugged
I
F
dI
F
dt
t
rr
time
Q
s
I
R
I
F
I
rrm
Fig.1. Definition of t
, Qs and I
rr1
10%
rrm
100%
time
V
F
V
fr
V
F
time
Fig.2. Definition of V
fr
0.5A
IF
0A
I = 0.25A
rec
IR
trr2
I = 1A
R
Fig.4. Definition of t
PF / W
12
Vo = 0.791 V
Rs = 0.013 Ohms
10
8
6
4
2
0
024681012
0.1
BYW29
0.2
IF(AV) / A
rr2
Tmb(max) / C
D = 1.0
0.5
p
p
t
I
t
D =
T
t
T
Fig.5. Maximum forward dissipation PF = f(I
square current waveform where I
F(AV)
=I
F(RMS)
108
115
122
129
136
143
150
);
F(AV)
x √D.
2.2
F(AV)
Tmb(max) / C
a = 1.57
1.9
.
122
125.5
129
132.5
136
139.5
143
146.5
150
F(AV)
);
R
Voltage Pulse Source
Current
shunt
Fig.3. Circuit schematic for t
D.U.T.
to ’scope
rr2
PF / W
8
Vo = 0.791 V
Rs = 0.013 Ohms
7
6
5
4
3
2
1
0
012345678
BYW29
2.8
4
IF(AV) / A
Fig.6. Maximum forward dissipation PF = f(I
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
November 1998 3 Rev 1.300
Page 4
Philips Semiconductors Product specification
Rectifier diodes BYW29E series
ultrafast, rugged
trr / ns
1000
100
10
1
1 10 100
IF=10A
IF=1A
dIF/dt (A/us)
Fig.7. Maximum trr at Tj = 25 ˚C.
Irrm / A
10
IF=10A
1
IF=1A
0.1
Qs / nC
100
IF=10A
5A
2A
1A
10
1.0
1.0 10 100
-dIF/dt (A/us)
Fig.10. Maximum Qs at Tj = 25 ˚C.
Transient thermal impedance, Zth j-mb (K/W)
10
1
0.1
p
0.01
p
t
P
D
D =
t
T
0.01
1
Fig.8. Maximum I
IF / A
30
Tj=150 C
Tj=25 C
20
10
0
0 1 2
typ
0.5 1.5
10 100
-dIF/dt (A/us)
at Tj = 25 ˚C.
rrm
max
VF / V
BYW29
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter T
j
0.001
1us 10us 100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
T
PBYL1025
Fig.11. Transient thermal impedance; Z
t
th j-mb
= f(tp).
November 1998 4 Rev 1.300
Page 5
Philips Semiconductors Product specification
Rectifier diodes BYW29E series
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
3,0 max
not tinned
1,3
max
(2x)
10,3
max
3,7
12
5,08
2,8
3,0
13,5
min
0,9 max (2x)
4,5
max
1,3
5,9
min
15,8
max
0,6
2,4
Fig.12. TO220AC; pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
November 1998 5 Rev 1.300
Page 6
Philips Semiconductors Product specification
Rectifier diodes BYW29E series
ultrafast, rugged
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1998 6 Rev 1.300
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