Datasheet BYW29-200, BYW29F-200 Datasheet (SGS Thomson Microelectronics)



BYW29(F)

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

FEATURES

SUITEDFOR SMPS VERYLOWFORWARD LOSSES NEGLIGIBLESWITCHINGLOSSES HIGHSURGE CURRENT CAPABILITY HIGHAVALANCHEENERGYCAPABILITY INSULATEDVERSION(ISOWATT220AC):

Insulatingvoltage= 2000 VDC Capacitance= 12 pF

A

K

DESCRIPTION

Single chip rectifier suited for switchmode power supplyand highfrequencyDC to DC converters. Packaged in TO-220AC or ISOWATT220AC this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protectionapplications.

TO-220AC

(Plastic)

BYW29-200

isolated

ISOWATT220AC

(Plastic)

BYW29F-200

ABSOLUTE MAXIMUMRATINGS

Symbol Parameter Value Unit

I

F(RMS)

I

F(AV)

I

FSM

Tstg

Tj

RMSforward current Averageforwardcurrent

δ = 0.5

TO-220AC Tc=120°C ISOWATT220AC Tc=100°C

Surgenon repetitiveforwardcurrent

Storageand junctiontemperaturerange

tp=10ms sinusoidal

16 A

8A 8

80 A

- 65 to + 150

A

°C °

C

Symbol Parameter Value Unit

V

RRM

October 1999 - Ed: 2D

Repetitivepeak reversevoltage

200 V

1/6

BYW29(F)

THERMALRESISTANCE

Symbol Parameter Value Unit

Rth(j-c)

Junctionto case

TO-220AC

ISOWATT220AC

2.8 °C/W

5.0

ELECTRICAL CHARACTERISTICS STATICCHARACTERISTICS

Symbol TestConditions Min. Typ. Max. Unit

I

*

R

V

F**

Pulse test :* tp= 5 ms, duty cycle < 2%

=25°CV

T

j

= 100°C

T

j

Tj= 125°CI

T

= 125°CI

j

T

=25°CI

j

** tp = 380 µs, duty cycle < 2 %

=V

R

RRM

=5A

F

=10A

F

=10A

F

10 µA

0.6 mA

0.85 V

1.05

1.15

To evaluatethe conductionlossesuse thefollowing equation: P = 0.65x I

F(AV)

+0.040 x I

F2(RMS)

RECOVERYCHARACTERISTICS

Symbol TestConditions Min. Typ. Max. Unit

trr T

tfr T

V

FP

=25°CI

j

=25°CI

j

Tj=25°CI

=0.5A

F

=1A

I

R

I

=1A

F

=30V

V

R

=1A

F

=1.1 x V

V

FR

=1A tr = 10 ns 2 V

F

Irr = 0.25A 25 ns

dI

/dt = -50A/µs35

F

tr=10ns 15 ns

F

2/6

BYW29(F)

Fig.1 : Average forward power dissipation versus

averageforward current.

P

F(av)(W)

12

=0.05 =0.1

=0.2

=0.5

=1

10

8

6 4

T

2

I

F(av)(A)

0

01234567891011

=tp/T

tp

Fig.3 : Forward voltage drop versus forward

current(maximumvalues).

VFM(V)

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.1 1 10 100

Tj=125 C

o

IFM(A)

Fig.2: Peakcurrent versusform factor.

I

M(A)

160 140 120 100

P=10W

80 60 40

P=5W

P=15W

20

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

=tp/T

T

I

M

tp

Fig.4 :

Relative variation of thermal impedance junctionto case versuspulse duration. (TO-220AC)

K

1.0

Zth(j-c) (tp. )

K=

Rth(j-c)

0.5

0.2

0.1

=0.5

=0.2

=0.1

T

Single pulse

tp(s)

1.0E-03 1.0E-02 1.0E-01 1.0E+00

=tp/T

Fig.5 :

Relative variation of thermal impedance junctionto case versuspulse duration. (ISOWATT220AC)

K

1

Zth(j-c) (tp. )

K=

Rth(j-c)

0.8

=0.5

0.6

0.4

=0.1

0.2

tp

0

1.0E-03 1.0E-02 1.0E-01 1.0 E+00 1.0E+01

=0.2

Single pulse

tp(s)

=tp/T

T

tp

3/6

BYW29(F)

Fig.6 :

Non repetitive surge peak forward current versusoverloadduration. (TO-220AC)

I

M(A)

80 70 60 50

o

Tc=25 C

40 30

IM

20 10

0

0.001 0.01 0.1 1

Fig.8 :

t =0.5 t(s)

Average current versus ambient

o

Tc=75 C

o

Tc=120 C

temperature. (δ: 0.5) (TO-220AC)

I

F(av)(A)

10

9 8 7 6 5

=0.5

4

T

Rth(j-a)=15 C/W

3 2 1

=tp/T

0

0 20 40 60 80 100 120 140 160

tp

Rth(j-a)=Rth(j-c)

o

Tamb( C)

o

Fig.7 :

Non repetitive surge peak forward current versusoverloadduration. (ISOWATT220AC)

I

M(A)

60 50 40

o

Tc=25 C

30

o

Tc=50 C

20

IM

10

0

0.001 0.01 0.1 1

Fig.9 :

t =0.5

t(s)

Average current versus ambient

o

Tc=100 C

temperature. (δ: 0.5) (ISOWATT220AC)

I

F(av)(A)

10

9 8 7 6

Rth(j-a)=15 C/W

o

5

=0.5

4

T

3 2 1

=tp/T

0

0 20 40 60 80 100 120 140 160

tp

Tamb( C)

Rth(j-a)=Rth(j-c)

o

Fig.10 :

Junction capacitance versus reverse

voltageapplied(Typical values).

C(pF)

VR(V)

4/6

F=1Mhz Tj=25 C

o

Fig.11:

Recoverychargesversus dI

QRR(nC)

90%CONFIDENCE Tj-100 C

O

dIF/dt(A/us)

/dt.

F

IF=IF(av)

BYW29(F)

Fig.12:

I

RM(A)

90% CONFIDENCE

Peakreversecurrent versus dIF/dt.

O

Tj-100 C

dIF/dt(A/us)

IF=IF(av)

Fig.13 :

Dynamic parameters versus junction

temperature.

QRR;IRM[Tj]/QRR;IRM[Tj=125 C]

IRM

o

Tj( C)

o

QRR

PACKAGEMECHANICAL DATA

ISOWATT220AC(JEDECoutline)

H

Diam

L6

L2

L3

F1

F

G

Coolingmethod : C Marking: Type number Weight: 2g

A

B

DE

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181 B 2.50 2.70 0.098 0.106 D 2.40 2.75 0.094 0.108

L7

E 0.40 0.70 0.016 0.028

F 0.75 1.00 0.030 0.039

F1 1.15 1.70 0.045 0.067

G 4.95 5.20 0.195 0.205

H 10.00 10.40 0.394 0.409 L2 16.00typ. 0.63 typ. L3 28.60 30.60 1.125 1.205 L6 15.90 16.40 0.626 0.646 L7 9.00 9.30 0.354 0.366

Diam 3.00 3.20 0.118 0.126

Recommendedtorque value : 0.55m.N Maximumtorque value: 0.70m.N

5/6

BYW29(F)

PACKAGEMECHANICAL DATA

TO-220AC(JEDECoutline)

H2

L5

ØI

L6

L2

L9

F1

L4

F

G

DIMENSIONS

A

C

REF.

Millimeters Inches

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181

L7

C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034

F1 1.14 1.70 0.044 0.066

G 4.95 5.15 0.194 0.202

D

H2 10.00 10.40 0.393 0.409

L2 16.40typ. 0.645 typ. L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620

M

E

L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154

M 2.6 typ. 0.102 typ.

Diam.I 3.75 3.85 0.147 0.151

Coolingmethod : C Marking: Type number

Recommendedtorque value : 0.8m.N Maximumtorque value : 1.0m.N

Weight: 1.86 g

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